公开(公告)号：FR2592989A1

公开(公告)日：1987-07-17

申请号：FR8700342

申请日：1987-01-14

Applicant: SONY CORP

Inventor： HIRATA SHOJI

IPC: H01S5/00 ,  H01S5/12 ,  H01L33/00 ,  H01L21/18 ,  H01S3/19

Abstract: A method of manufacturing a distributed feedback type semiconductor laser comprises a first cladding layer, an active layer disposed on the first cladding layer, a guiding layer disposed on the active layer and a second cladding layer disposed on the guiding layer respectively, in which a grating is disposed on the guiding layer, wherein the method comprises, a step of forming a predetermined material layer on the guiding layer, a step of selectively etching the material layer and the guiding layer until the guiding layer is at least partially exposed thereby forming undulation substantially in a trigonal waveform to the surface of the material layer and the guiding layer, and a step of forming the second cladding layer so as to cover the unevenness. A distributed feedback type semiconductor laser having a grating with an intense coupling the light can be manufactured easily and at a good reproducibility.

公开(公告)号：JP2011035647A

公开(公告)日：2011-02-17

申请号：JP2009179735

申请日：2009-07-31

Applicant: Sony Corp ,  ソニー株式会社

Inventor： NOMOTO KAZUTOSHI ,  ONO TOMOTERU ,  HIRATA SHOJI

IPC: H04R23/00 ,  G01B11/00

Abstract: PROBLEM TO BE SOLVED: To provide a displacement detector with a low noise level and high sensitivity with a simple configuration.
SOLUTION: A metal layer 14 supported so as to be displaced (vibrated) and a metal layer 24 provided to the surface of optical glass 23 are arranged oppositely to each other via a predetermined gap g. A light emitting element 30 is fixed to a predetermined position, and emits light with predetermined wavelength at a predetermined angle θ to the rear surface of the metal layer 24. A light receiving element 40 detects a reflected light beam among light beams emitted from the light emitting element 30.
COPYRIGHT: (C)2011,JPO&INPIT

Abstract translation: 要解决的问题：以简单的配置提供具有低噪声水平和高灵敏度的位移检测器。

解决方案：被设置为位移（振动）的金属层14和设置在光学玻璃23的表面上的金属层24经由预定的间隙g彼此相对布置。 发光元件30被固定到预定位置，并且以与金属层24的后表面成预定角度θ发射具有预定波长的光。光接收元件40检测从光发射的光束中的反射光束 发行单元30.版权所有（C）2011，JPO＆INPIT

公开(公告)号：JP2009260129A

公开(公告)日：2009-11-05

申请号：JP2008109138

申请日：2008-04-18

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HIRATA SHOJI

IPC: H01S3/10

CPC classification number: G02B6/4296 ,  G01J1/0422 ,  G01J1/0451 ,  G01J1/08 ,  H01S5/4012 ,  H01S5/4087

Abstract: PROBLEM TO BE SOLVED: To provide a laser beam multiplexer capable of easily multiplexing a plurality of laser beams. SOLUTION: The laser beam multiplexer 1 includes a plurality of laser sources 16 around a multiplexing element 10. The multiplexing element 10 has a hollow portion 11 with a section of an elliptical shape, and a reflective layer 12 is formed on the whole wall surface of the hollow portion 11. A plurality of light-incident apertures 13 and one light-emitting aperture 15 are provided in the multiplexing element 10. The laser beams emitted from the respective laser sources 16 enter the hollow portion 11 through the light-incident apertures 13, and pass through one of focal points F1, F2. The plurality of laser beams passed through the focal point are output from the light-emitting aperture 15 after being superimposed substantially along the major axis (x axis) while each repeating a plurality of times of reflection in the reflective layer 12. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：提供能够容易地复用多个激光束的激光束多路复用器。 解决方案：激光束多路复用器1包括多路复用元件10周围的多个激光源16.复用元件10具有中空部分11，其具有椭圆形截面，并且整体形成反射层12 中空部分11的壁表面。在多路复用元件10中设置有多个光入射孔13和一个发光孔15.从各激光源16发射的激光束通过发光元件10进入中空部分11。 入射孔13，并通过焦点F1，F2之一。 在基本上沿着长轴（x轴）重叠之后，通过焦​​点的多个激光束从发光孔15输出，同时在反射层12中重复多次反射。 （C）2010，JPO＆INPIT

公开(公告)号：JP2009128170A

公开(公告)日：2009-06-11

申请号：JP2007303172

申请日：2007-11-22

Applicant: Sony Corp ,  ソニー株式会社

Inventor： NOMOTO KAZUTOSHI ,  HIRATA SHOJI

IPC: G01H9/00 ,  H04R23/00

Abstract: PROBLEM TO BE SOLVED: To obtain directional characteristics in vibration detection, without having to depend on electrical addition.
SOLUTION: This vibration detection device is equipped with a Michelson interferometer, constituted to include a first vibration film 151 and a second vibration film 152, capable of reflecting the laser light emitted from a laser light source 10 and a polarization beam splitter 130 for separating the laser light into first and second optical paths by the polarization beam splitter 130, and forming an interference fringe, by allowing reflected light reflected by the first vibration film 151 in the first optical path, to make them mutually interfere with the reflected light reflected by the second vibrating film 152 in the second optical path; and a detection means for quantizing and detecting each vibration of the first vibrating film 151 and the second vibrating film 152, based on the interference fringe.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：为了获得振动检测中的方向特性，而不必依赖于电加法。 解决方案：该振动检测装置配备有迈克尔逊干涉仪，其构成为包括能够反射从激光源10和偏振分束器130发射的激光的第一振动膜151和第二振动膜152 用于通过偏振分束器130将激光分离成第一和第二光路，并且通过允许第一光路中由第一振动膜151反射的反射光形成干涉条纹，使得它们与反射光相互干扰 由第二光路中的第二振动膜152反射; 以及基于干涉条纹量化和检测第一振动膜151和第二振动膜152的每个振动的检测装置。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2008261684A

公开(公告)日：2008-10-30

申请号：JP2007103594

申请日：2007-04-11

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HIRATA SHOJI ,  NOMOTO KAZUTOSHI

IPC: G01H1/00 ,  H04R23/00

Abstract: PROBLEM TO BE SOLVED: To provide a vibration detecting apparatus capable of improving detection sensitivity when optical detection of digital vibrations is performed.
SOLUTION: A laser beam Lout from a laser light source 10 is made to separately travel through two optical paths OP1 and OP2 in a two-beam interferometer. A diffracted light Ld1 which has traveled through the optical path OP1 and been diffracted by a diffraction element 151 on a vibrating membrane 14 and a diffracted light Ld2 which has traveled through the optical path OP2 and been diffracted by the diffraction element 151 are made to interfere with each other to form interference fringes. On the basis of the interference fringes, vibrations of the vibrating membrane 14 are quantized and detected. Vibrations of the vibrating membrane 14 are thereby optically and digitally detected. The diffraction pitch of the diffraction element 151 is set in such a way as to have approximately the same length as that of the pitch of the interference fringes F1 when the vibrating membrane 14 is in a stationary state. Since the directions of diffraction of the diffracted lights Ld1 and Ld2 approximately match each other, displacements of the vibrating membrane 14 are amplified and detected.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种当执行数字振动的光学检测时能够提高检测灵敏度的振动检测装置。 解决方案：将来自激光光源10的激光束Lout分别穿过双光束干涉仪中的两个光路OP1和OP2。 已经穿过光路OP1并被衍射元件151衍射的振动膜14的衍射光Ld1和已经穿过光路OP2并被衍射元件151衍射的衍射光Ld2被干扰 彼此形成干涉条纹。 基于干涉条纹，量化并检测振动膜14的振动。 从而光学和数字地检测振动膜14的振动。 当振动膜14处于静止状态时，衍射元件151的衍射间距被设定为具有与干涉条纹F1的间距大致相同的长度。 由于衍射光Ld1和Ld2的衍射方向大致彼此匹配，因此放大并检测振动膜14的位移。 版权所有（C）2009，JPO＆INPIT

公开(公告)号：JP2006294745A

公开(公告)日：2006-10-26

申请号：JP2005111068

申请日：2005-04-07

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HIRATA SHOJI

IPC: H01S5/223

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser device which can suppress the peak of an NFP end and improve its uniformity.
SOLUTION: A semiconductor layer 20 including an active layer 22 is formed on a substrate 10, and a p-side electrode 31 is provided on the semiconductor layer 20. A projected line 40 is formed in the semiconductor layer 20, and a refractive index waveguide 50 is formed corresponding to the projected line 40. The width W0 of the refractive index waveguide 50 is made uniform in the extending direction of the projected line 40, 10 μm or more for example. A current non-injection area 53 is provided corresponding to boundary vicinity areas 51 and 52 in the refractive index waveguide 50. The current non-injection area 53 is formed by providing notches 31A and 24A to the p-side electrode 31 and a p-side contact layer 24. The width of the current non-injection area 53 is 2 μm or more and 10 μm or less from the boundary of the refractive index waveguide 50, for example, and its length is preferably 10 μm or more, for example.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供能够抑制NFP端的峰值并提高其均匀性的半导体激光器件。 解决方案：在基板10上形成包括有源层22的半导体层20，在半导体层20上设置p侧电极31.在半导体层20中形成有投影线40， 折射率波导50对应于投影线40形成。折射率波导50的宽度W0在投影线40的延伸方向上例如为均匀，例如为10μm以上。 与折射率波导50中的边界附近区域51和52相对应设置电流非注入区域53.当前的非注入区域53是通过向p侧电极31提供缺口31A和24A而形成的， 例如，当前的非注入区域53的宽度为例如折射率波导50的边界的2μm以上且10μm以下，其长度优选为10μm以上。 。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2005327783A

公开(公告)日：2005-11-24

申请号：JP2004142187

申请日：2004-05-12

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI ,  TAKIGUCHI YOSHIRO ,  HIRATA SHOJI

IPC: H01S5/22 ,  H01S5/00 ,  H01S5/028 ,  H01S5/10 ,  H01S5/20 ,  H01S5/223

CPC classification number: H01S5/1082 ,  H01S5/0286 ,  H01S5/1014 ,  H01S5/204 ,  H01S5/2063 ,  H01S5/2072 ,  H01S5/2214 ,  H01S5/2231

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser capable of effectively inhibiting the influence of return light.
SOLUTION: Notches 51 are formed at a pair of corners on the main light emitting side end surface 11 of a protrude 50. Light emission does not occur at regions near transverse boundaries 31B, 31C of a light emission region 31, thus making it possible to inhibit the influence of the return light, even if it may enter or intrude the region. In another embodiment on the main light emitting side end surface, a reflection coefficient of a laser beam at a region near the transverse center of the light emitting region is caused to be higher those that at the regions near the transverse boundaries. Alternately, two groove like recesses are formed on the surface of a second conductivity type semiconductor layer in the same direction, and the two groove-shaped recesses near the main light emitting side end surface may have larger widths than those of groove-shaped recesses at an intermediate position between the main light emitting side end surface and an opposite side end surface. Additionally, the light emitting region near the transverse boundaries may have an inclined plane in the main light emitting side end surface, or an impurity added region may be formed on the main light emitting side end surface so that it covers corners of the main light emitting side end surface of the protruding part.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供能够有效地抑制返回光的影响的半导体激光器。 解决方案：凹口51形成在突出部分50的主发光侧端面11上的一对角部处。在发光区域31的横向边界31B，31C附近的区域处不发光。因此， 即使可能进入或侵入该区域，也可以抑制返回光的影响。 在主发光侧端面的另一实施例中，激光束在发光区域的横向中心附近的区域的反射系数比横向边界附近的那些的反射系数更高。 或者，在相同方向的第二导电类型半导体层的表面上形成两个凹槽状凹部，并且主发光侧端面附近的两个凹槽状凹部的宽度可以比槽形凹部的宽度大 在主发光侧端面和相对侧端面之间的中间位置。 此外，横向边界附近的发光区域可以在主发光侧端面中具有倾斜平面，或者可以在主发光侧端面上形成杂质添加区域，使得其覆盖发光主发光侧的角部 突出部的侧端面。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005018417A

公开(公告)日：2005-01-20

申请号：JP2003182479

申请日：2003-06-26

Applicant: Sony Corp ,  ソニー株式会社

Inventor： HIRATA SHOJI

IPC: G08B13/04 ,  G08B13/22 ,  G08B25/04

Abstract: PROBLEM TO BE SOLVED: To detect destruction at any point within almost the entire area of a window pane, without forming a conductive film on the surface of wave guide member of the window pane or the like.
SOLUTION: The monitoring device is provided with the wave guide member 1 of the window pane or the like which covers the opening of a building such as a window and guides light into the inside of the member with wall thickness, a light source 2 of, for instance, a semiconductor laser which conducts the light into the wave guide member, and a light detection means 3 of, for instance, a photodiode or a phototransistor which detects the light which has been guided through the wave guide member and arrived from the light source. Depending on the presence of damage of the wave guide member, the amount of the light detected by the light detection means changes.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：为了在窗玻璃的几乎整个区域内的任何点处检测到破坏，而不在窗玻璃等的波导构件的表面上形成导电膜。 解决方案：监视装置设有覆盖窗户等建筑物的开口的窗玻璃等的波导构件1，并将光引导到具有壁厚的构件的内部，光源 例如，例如将导入到波导构件的光的半导体激光器2和例如光电二极管或光电晶体管的光检测装置3，该光检测装置3检测已经被引导通过波导构件并到达的光 从光源。 根据波导构件的损伤的存在，由光检测装置检测到的光量变化。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：JP2004172506A

公开(公告)日：2004-06-17

申请号：JP2002338782

申请日：2002-11-22

Applicant: Sony Corp ,  ソニー株式会社

Inventor： ASAZUMA YASUNORI ,  HIRATA SHOJI

IPC: H01S5/20 ,  H01S5/10 ,  H01S5/223

CPC classification number: H01S5/223 ,  H01S5/10 ,  H01S5/105 ,  H01S5/2036 ,  H01S5/2081

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor laser device where both NFP and FFP have a uniform distribution of light intensity.
SOLUTION: The semiconductor laser device 40 has the same layered structure as a conventional broad area-type semiconductor laser device has except that regions 44 located at the sides of a light emitting region 42 of an AlGaAs active layer 18 and a p-AlGaAs clad layer 20 are two-dimensionally photonic-crystallized. A two-dimensional photonic crystal structure provided in the regions 44 located at both the sides of the light emitting region 42 has the property of hardly transmitting laser rays having a wavelength of 780 μm in the region 44 in a direction parallel with a stripe-like ridge (lengthwise direction of a resonator). Laser rays traveling in the lengthwise direction of a resonator are present only in the light emitting region 42 sandwiched between the two photonic crystal regions 44, so that laser rays are trapped in a lateral direction by the photonic crystal regions 44. The laser rays are trapped by the regions 44, whereby an optical loss occurring at both the edges of the stripe serving as a light trapping interface can be restrained, a wavefront is less curved, and both NFP and FFP have a uniform distribution of light intensity.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2002057408A

公开(公告)日：2002-02-22

申请号：JP2000240564

申请日：2000-08-09

Applicant: SONY CORP

Inventor： HIRATA SHOJI

IPC: H01S5/22 ,  H01S5/022

Abstract: PROBLEM TO BE SOLVED: To manufacture a highly reliable semiconductor laser by suppressing application of bonding stress to an active layer. SOLUTION: The semiconductor laser 1 comprises an n-type substrate 10, where protruding regions 10a and recesses regions 10b are formed contiguously to each other; function layers 20 each comprising an n-type clad layer 21, an active layer 22 and a p-type clad layer 23 formed sequentially in the recesses region 10b of the substrate 10; trench parts 11 each being made between the sidewall of the protruding region 10a and the function layer 20; n electrodes 41 formed on the protruding regions 10a of the substrate 10; p electrodes 32 formed on the function layers 20 at positions closer to the substrate 20 side than to the n electrode 41; and a mounting substrate 50, where the n electrodes 41 and the p electrodes 32 are connected via solders 42.