公开(公告)号：JP2007180643A

公开(公告)日：2007-07-12

申请号：JP2005373849

申请日：2005-12-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KATOU GOUSAKU

IPC: H03K17/78 ,  H01L25/065 ,  H01L25/07 ,  H01L25/18 ,  H01L33/62 ,  H01S5/00

CPC classification number: H01L2224/48091 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a switching device that has almost no loss in a signal transmission circuit, enables to easily take impedance matching while allowing isolation during cut-off to be sufficiently obtained, and is capable of reducing manufacturing costs; and to provide a signal transmission circuit device using the switch device, and a switching method for the signal transmission circuit device.
SOLUTION: The switching device is provided with a movable member 7 that allows a contact electrode 9 as a conductive member to be brought into contact with wiring sets 10, 11 or allows the contact electrode to be separated from the wiring sets while being deformed with thermal energy of light by receiving the light emitted from a light source 5. Accordingly, it is possible to switch in a state that a switch control circuit and the wiring sets or the like electrically connected to a signal line as a signal transmission circuit are completely, spatially, and electrically separated from each other. By this, it prevents a high-frequency signal component from leaking to the switch control circuit side while allowing isolation during switching to be sufficiently obtained.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了提供在信号传输电路中几乎没有损耗的开关装置，能够容易地获得阻抗匹配，同时能够充分获得截止期间的隔离，并且能够降低制造成本; 并提供使用开关装置的信号传输电路装置，以及用于信号传输电路装置的切换方法。 解决方案：开关装置设置有可移动部件7，其允许作为导电部件的接触电极9与布线组10,11接触，或允许接触电极与布线组分离，同时 通过接收从光源5发出的光而使光的热能变形。因此，可以切换为与信号线电连接的开关控制电路和布线组等作为信号传输电路 完全，空间上和电气彼此分离。 由此，能够防止高频信号成分泄漏到开关控制电路侧，同时能够充分获得开关期间的隔离。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2007088503A

公开(公告)日：2007-04-05

申请号：JP2006308576

申请日：2006-11-15

Applicant: Sony Corp ,  ソニー株式会社

Inventor： KATOU GOUSAKU ,  TANIGUCHI TAKEHIRO ,  OKANO NOBUKATA ,  HANZAWA YASUNARI

IPC: H01S5/227 ,  H01L21/306 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device using a uniform ridge having a forward taper-type ridge and highly symmetric property.
SOLUTION: A mask pattern 11 is formed on a substrate 10 and an isotropic wet etching which does not have dependency is performed on the face orientation of crystal including at least a {111} B face. Then, the selective etching which is selectively carried out is performed on the face orientation including at least the {111} B face. Therefore, the substrate 10 having a ridge 10a where both sides are constituted of the {111} B faces is manufactured by those two types of etchings. Thus, an SDH structure is formed on the substrate 10, and a semiconductor light emitting device is manufactured.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：提供一种使用具有前锥形脊和高对称性的均匀脊的半导体发光器件。 解决方案：在衬底10上形成掩模图案11，并且对包括至少ä111} B面的晶体的面取向进行不依赖性的各向同性湿蚀刻。 然后，对包括至少ä111} B面的面取向进行选择性地进行选择性蚀刻。 因此，通过这两种蚀刻来制造具有两侧由ä111} B面构成的脊部10a的基板10。 因此，在衬底10上形成SDH结构，制造半导体发光器件。 版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006261472A

公开(公告)日：2006-09-28

申请号：JP2005078399

申请日：2005-03-18

Applicant: Sony Corp ,  ソニー株式会社

Inventor： NAGAI HIROYUKI ,  YAJIMA TAKASHI ,  KATOU GOUSAKU ,  HASHIMOTO MITSUO ,  OMI MOTOSUKE

IPC: H05K7/20 ,  F28D15/02 ,  H01L23/427

Abstract: PROBLEM TO BE SOLVED: To provide a heat transfer device capable of reducing a manufacturing cost, electronic equipment loading the heat transfer device, and a manufacturing method for the heat transfer device.
SOLUTION: The heat transfer device 10 is constituted by laminating a central plate material 3, spacers 2 and 4, side plate materials 1 and 5, and a clad material 6 configuring a heat absorber and the clad material 7 configuring a heat dissipator. Openings 2a and 4a formed to the spacers 2 and 4 respectively are used as flow paths for a working fluid. Accordingly, since the heat transfer device can be formed without depending upon a fine working technique such as a photolithography as seen in conventional devices, the manufacturing cost can be held down.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供能够降低制造成本的传热装置，装载传热装置的电子设备以及传热装置的制造方法。 解决方案：传热装置10通过层叠中心板材3，间隔件2和4，侧板材料1和5以及构成吸热体的包层材料6和构成散热器的包层材料7 。 分别形成在间隔件2和4上的开口2a和4a用作工作流体的流动路径。 因此，由于可以在不依赖于诸如常规装置中的光刻的精细加工技术的情况下形成传热装置，所以可以抑制制造成本。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2004085186A

公开(公告)日：2004-03-18

申请号：JP2003165805

申请日：2003-06-10

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SOTOZAKI MINEHIRO ,  KATOU GOUSAKU ,  OMI MOTOSUKE ,  YAJIMA TAKASHI ,  MAKINO TAKUYA

IPC: F25D9/00 ,  F28D15/02 ,  G06F1/20 ,  H01L23/427 ,  H05K7/20

CPC classification number: F28D15/0266 ,  F28D15/046 ,  H01L2924/0002 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a cooling device of high cooling performance and high flexibility, an electronic equipment, an acoustic device, and a method of manufacturing the cooling device. SOLUTION: The cooling device 1 is provided with an evaporator 2 for cooling a cooled object, and a condenser 3 for radiating heat generated in cooling with the evaporator 2, to the outside. A gas phase passage 4 and a liquid phase passage 5 which are pipes formed of fluorocarbon resin to allow an operating fluid to flow through, are connected between the evaporator 2 and the condenser 3 to circulate the operating fluid. COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2004022683A

公开(公告)日：2004-01-22

申请号：JP2002173445

申请日：2002-06-13

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OMI MOTOSUKE ,  KATOU GOUSAKU ,  SOTOZAKI MINEHIRO

IPC: F28D15/02 ,  C25D1/18 ,  H01L23/427 ,  H05K7/20

Abstract: PROBLEM TO BE SOLVED: To provide a cooling device which is reduced in size and thickness and superior in temperature controlling performance, an electronic equipment, and a display device, and to provide a method of manufacturing cooling device.
SOLUTION: The cooling device 1 is provided with a flow conduit board 10 and an intermediate board 30 which are both rectangular and formed of polydimethyl siloxane resin, and a capacitor board 20 and an evaporator board 40 which are both rectangular and formed of metal, such as nickel or the like having high thermal conductivity, equipped with grooves on their surfaces 10a and 20a respectively, and fitted in holes 31 and 32 bored in the intermediate board 30 and fixed by thermocompression bonding.
COPYRIGHT: (C)2004,JPO

公开(公告)号：JP2002110632A

公开(公告)日：2002-04-12

申请号：JP2000333880

申请日：2000-09-26

Applicant: SONY CORP

Inventor： KATOU GOUSAKU ,  OKANO NOBUMASA

IPC: H01L21/302 ,  H01L21/304 ,  H01L21/306 ,  H01L21/3065 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a manufacturing method of a structural substrate with proper planarity of the surface which comprises a ridge part, formed partially on the surface to project from the surface of the substrate, and to provide a manufacturing method of a semiconductor device using the structural substrate. SOLUTION: A GaAs-group substrate 10, after forming a ridge part 10a, is subjected to at least two of the following treatments in the order of treatment with an organic solvent, plasma treatment and surface reduction treatment. In the treatment with an organic solvent, for example, the substrate 10 is immersed in acetone, followed by rinsing with water and them drying. Ultrasonic cleaning may be added to the acetone treatment and the water rinsing. As the plasma treatment, the substrate is subjected to surface oxidation with an oxygen plasma and then to reduction treatment of immersing the substrate in 1 hydrogen 2 ammonium difluoride, as the surface reduction treatment. As a result, roughness of the substrate 10 can be alleviated.

公开(公告)号：JP2000208876A

公开(公告)日：2000-07-28

申请号：JP530799

申请日：1999-01-12

Applicant: SONY CORP

Inventor： KATOU GOUSAKU ,  ITO SATORU

IPC: H01L21/365 ,  H01L21/203 ,  H01S5/00 ,  H01S5/347

Abstract: PROBLEM TO BE SOLVED: To manufacture a semiconductor light emitting device which is restrained from varying in properties such as an operation voltage and the like when it is manufactured, capable of operating on a low voltage, long in service life, and high in yield. SOLUTION: An semiconductor laser of SCH structure(separate confinement hetero-structure) is composed of a ZnCoSe active layer, a ZnSSe optical wave- guide layer, and a ZnMgSSe clad layer, all P-type ZnTe quantum well layers 12a constituting a P-type ZnSe/ZnTeMQW(multi-quantum well) layer 12 of P-type contact layer are set nearly in the same thickness, and P-type ZnSe barrier layers 12v are set all in the same thickness. The P-type ZnTe quantum well layers 12a and the P-type ZnSe barrier layers 12b constituting the P-type ZnSe/ZnTeMQW layer 12 are grown in a desired thickness in a growing time almost an integer times as long as a rotation period of the substrate.

公开(公告)号：JPH10199898A

公开(公告)日：1998-07-31

申请号：JP1181697

申请日：1997-01-06

Applicant: SONY CORP

Inventor： TSUKAMOTO HIRONORI ,  KATOU GOUSAKU ,  NOGUCHI HIROYASU

IPC: H01L21/203 ,  H01L21/363 ,  H01L33/06 ,  H01L33/12 ,  H01L33/28 ,  H01S5/00 ,  H01L33/00 ,  H01S3/18

Abstract: PROBLEM TO BE SOLVED: To provide a method of growing crystal, whereby the flatness is enhanced and film thickness and compsn. ratio are controlled with high accuracy. SOLUTION: A II and VI elements are fed to grow a crystal layer of a II-VI compd. semiconductor by the MBE method, comprising a step 1 of feeding a II element and then a VI element with an interruption time and allowing another interruption time to grow a crystal layer of 0.5ML or less, and a step 2 of feeding the II element and then the IV element with an interruption time and allowing another interruption time to grow a crystal layer of 0.5ML or more, thereby forming a crystal layer of 1ML, together with the step 1. Thus a crystal is grown two-dimensionally.

公开(公告)号：JPH08111566A

公开(公告)日：1996-04-30

申请号：JP26835994

申请日：1994-10-06

Applicant: SONY CORP

Inventor： KATOU GOUSAKU ,  OKUYAMA HIROYUKI

IPC: H01L33/06 ,  H01L33/28 ,  H01L33/30 ,  H01S5/00 ,  H01S3/18 ,  H01L33/00

Abstract: PURPOSE: To realize a semiconductor light emitting element of low threshold current density and long service life whose clad layer is formed of ZnMgSSe compound semiconductor. CONSTITUTION: An N-type Zn1-p Mgp Sq Se1-q clad layer 3, an N-type ZnSu Se1-u optical waveguide layer 4, an active layer 5, a P-type ZnSu Se1-u optical guide layer 6, and a P-type Zn1-p Mgp Sq Se1-q clad layer 7 are laminated on an N-type GaAs substrate 1 for the formation of a semiconductor laser, wherein the composition ratio p of Mg in the N-type Zn1-p Mgp Sq Se1-q clad layer 3 is so set as to satisfy a formula, 0.10

公开(公告)号：JPH0897519A

公开(公告)日：1996-04-12

申请号：JP1732795

申请日：1995-02-03

Applicant: SONY CORP

Inventor： OKUYAMA HIROYUKI ,  ISHIBASHI AKIRA ,  KATOU GOUSAKU ,  YOSHIDA HIROSHI ,  NAKANO KAZUSHI ,  UKITA SHOICHI ,  KIJIMA SATORU ,  OKAMOTO SAKURAKO

IPC: H01L33/14 ,  H01L33/28 ,  H01S5/00 ,  H01S5/028 ,  H01S5/30 ,  H01S5/327 ,  H01S3/18 ,  H01L33/00

Abstract: PURPOSE: To make a short-wavelength light emission possible at room temperatures and to contrive the stabilization of the performance characteristics, such as current-voltage characteristic and current-light output characteristic, and the prolongation of the life of the device in the II-VI compound semiconductor light-emitting device. CONSTITUTION: A semiconductor light-emitting device constituted of at least a first conductivity type first clad layer 2, an active layer 3 and a second conductivity type second clad layer 4 are provided on a substrate 1, at least the layer 3 consists of a II-VI compound semiconductor and this layer 3 is doped with either of an N-type dopant and a P-type dopant or both of the N-type and P-type dopants.