公开(公告)号：JP2000076642A

公开(公告)日：2000-03-14

申请号：JP24641098

申请日：1998-08-31

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MATSUZAWA NOBUYUKI ,  KISHII NORIYUKI ,  KOBAYASHI TAKESHI ,  KAMEI TAKAHIRO ,  KURIHARA KENICHI ,  IWAMOTO HIROSHI ,  OSUE TADASHI ,  KABAYA YOSHITERU

IPC: C09D5/23 ,  G11B5/41 ,  G11B5/708 ,  G11B5/72

Abstract: PROBLEM TO BE SOLVED: To provide a magnetic recording and reproducing device which surely suppresses the occurrence of seizing material without causing any gradation of characteristics by wear.
SOLUTION: In this helical scanning type magnetic recording and reproducing device equipped with a magnetoresistance effect reproducing head or induction thin film magnetic head, a magnetic recording medium or a cleaning tape holding a seizing inhibitor is travelled. The seizing inhibitor contains a compound having a pyridine skeleton and two or more coordination positions. The compound having a pyridine structure and two or more coordination positions has excellent complex-forming ability with metal atoms so that metal oxides produced on the surface of the head 6a, 6b are changed into complex salts, which easily drop off from the surface of the head 6a, 6b and do not remain on the head surface.
COPYRIGHT: (C)2000,JPO

Abstract translation: 要解决的问题：提供一种磁性记录和再现装置，其可靠地抑制卡住材料的发生而不会由于磨损而引起任何特性的等级。 解决方案：在配备有磁阻效应再现头或感应薄膜磁头的螺旋扫描型磁记录和再现装置中，移动了磁记录介质或保持着色抑制剂的清洁带。 卡滞抑制剂含有具有吡啶骨架和两个或更多个配位位置的化合物。 具有吡啶结构和两个或更多个配位位置的化合物与金属原子具有优异的络合物形成能力，使得在头部6a，6b的表面上产生的金属氧化物变成络合盐，其容易从 头部6a，6b，并且不保留在头部表面上。

公开(公告)号：JPH09167764A

公开(公告)日：1997-06-24

申请号：JP9515996

申请日：1996-04-17

Applicant: SONY CORP

Inventor： MATSUZAWA NOBUYUKI ,  HASEGAWA TOSHIAKI

IPC: H01L21/768 ,  H01L21/312 ,  H01L21/316

Abstract: PROBLEM TO BE SOLVED: To enable insulating film to be stabilized for a long term without causing a void by laminating insulating films made of an organic material on the surface of silicon oxide films after feeding silane coupling agent. SOLUTION: Firstly, the first silicon oxide film 2 is formed on a silicon substrate 1 and after the formation of a wiring pattern 3, the second silicon oxide film 4 is formed. Next, a wafer is spin coated with carbon tetrachloride melted with one wt.% of silane coupling agent. Thus, silane coupling agent is chemically coupled with hydroxyl group on the silicon oxide film surface. Next, an organic insulating film 5 made of amorphous teflon is formed. Later, the third silicon oxide film 6 is formed. In such a constitution, the laminated layer films made of the second silicon oxide film 4, the organic insulating film 5 and the third silicon oxide film 6 are formed into an interlayer insulating film at low dielectric constant due to the existance of the organic insulating film 5.

公开(公告)号：JPH0346135A

公开(公告)日：1991-02-27

申请号：JP18085589

申请日：1989-07-13

Applicant: SONY CORP

Inventor： MATSUZAWA NOBUYUKI ,  ASAI NOBUTOSHI

IPC: G11B7/24 ,  B41M5/26

Abstract: PURPOSE:To relieve the restriction on the recording material to be used for a recording layer by laminating the recording layer which contains a thermally decomposing material and a metallic layer which absorbs a laser beam to some extent on a substrate. CONSTITUTION:The metallic layer 3 to be provided on the recording layer 2 has the reflectivity which is high to some extent; in addition, the layer is required to make photo-thermal conversion by partly absorbing the laser beam; therefore, this layer is required to have some absorption to the laser beam. The reflectivity in the laser wavelength of the metallic layer 3 is consequently required to be >=70% and

公开(公告)号：JPH02235790A

公开(公告)日：1990-09-18

申请号：JP5638689

申请日：1989-03-10

Applicant: SONY CORP

Inventor： MATSUZAWA NOBUYUKI

IPC: B41M5/26 ,  G11B7/24 ,  G11B7/244

Abstract: PURPOSE:To greatly enhance the sensitivity by forming a dye layer containing a dye and a polymer and having a specific film thickness on a substrate and specifying the ratio of the polymer contained in the dye layer and the absolute of the temp. gradient of the surface tension of the polymer. CONSTITUTION:A dye layer containing a dye and a polymer and having a film thickness of 1400Angstrom or more is formed on a substrate and the ratio of the polymer contained in the dye layer is 20-50% on a wt. basis and the absolute value of the temp. gradient of the surface tension of the polymer is 0.07dyne/ cm.K or more. Herein, as the org. dye material contained in the dye layer, concretely, a cyanine dye, a metal complex dye, a phthalocyanine dye, a naphthalocyanine dye or the like are designated. As the polymer to be added, the temp. gradient of the surface tension thereof is important and a polymer wherein the absolute value thereof is 0.07dyne/cm.K or more is selectively used. That is, by using the polymer high in the absolute value of the temp. gradient of surface tension as a binder, moving force becomes large and the sensitivity of an optical recording medium is estimated to be enhanced.

公开(公告)号：JPH02179944A

公开(公告)日：1990-07-12

申请号：JP33429488

申请日：1988-12-29

Applicant: SONY CORP

Inventor： MATSUZAWA NOBUYUKI ,  ASAI NOBUTOSHI ,  TAMURA SHINICHIRO

IPC: G11B7/26

Abstract: PURPOSE:To form an org. dye layer and a polymer layer at the same time and to enable wide selection of materials by coating a substrate with a coating material prepared by dissolving the org. dye and the polymer which are insoluble to each other into one solvent. CONSTITUTION:On a transparent substrate 1 in which guide grooves are formed as required, the org. dye layer 2 which absorbs semiconductor laser light to effect photothermal conversion, the polymer layer 3 to protect the dye layer 2 are successively laminated. The org. solvent used for preparation of the coating material is properly selected from org. solvents used in the field of optical recording and from those compounds that have enough solubility to both of the org. dye and the polymer and give no damage on the substrate. As for the org. dye, those used in the filed of optical recording can be used, but it is required that the dye is insoluble with the polymer. Thereby, the uniform org. dye layer is formed without damaging the substrate, which improves the reliability of the medium.

公开(公告)号：JP2013088378A

公开(公告)日：2013-05-13

申请号：JP2011231470

申请日：2011-10-21

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MATSUZAWA NOBUYUKI ,  MAEDA KENSAKU ,  MORIYA YUSUKE ,  OZAWA KEN

IPC: G01N21/64 ,  G01N33/53 ,  G01N33/543 ,  H01L27/14 ,  H01L27/146

CPC classification number: C12Q1/6834 ,  G01N21/6454 ,  G01N33/54373 ,  G01N33/582

Abstract: PROBLEM TO BE SOLVED: To provide a chemical sensor, a chemical sensor module, a biomolecule detection device, and a biomolecule detection method that enable biomolecules to be detected with high precision.SOLUTION: A chemical sensor of the present invention comprises a substrate, an on-chip lens, and a planarization layer. The substrate has a plurality of photodiodes formed thereon and arranged in a flat shape. The on-chip lens is provided on the substrate and condenses incident light on the photodiodes. The planarization layer covers and planarizes the on-chip lens and forms a probe support surface for supporting a probe material.

Abstract translation: 要解决的问题：提供能够以高精度检测生物分子的化学传感器，化学传感器模块，生物分子检测装置和生物分子检测方法。 解决方案：本发明的化学传感器包括基板，片上透镜和平坦化层。 基板具有形成在其上的多个光电二极管并且被布置成平坦的形状。 片上透镜设置在基板上，并将入射光聚光在光电二极管上。 平坦化层覆盖并平面化片上透镜并形成用于支撑探针材料的探针支撑表面。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2011215315A

公开(公告)日：2011-10-27

申请号：JP2010082426

申请日：2010-03-31

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TAKEMURA ICHIRO ,  MITA ISAO ,  MATSUI ERIKO ,  MATSUZAWA NOBUYUKI

IPC: G03F7/40 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method for forming a multi-resist pattern comprising a positive chemically amplified resist, and to provide a processing method of a functional material layer using the multi-resist pattern, and a multi-resist pattern structure.SOLUTION: A first resist pattern 4 is formed, comprising a positive chemically amplified resist containing a photo-acid generator and a resin component showing changes in solubility by an action of an acid. The surface of the pattern is coated with an aqueous solution 6 of a modification material containing a crosslinking agent that permeates into the pattern and can carry out crosslink with the resist resin component by an action of an acid, and a permeation promoter that promotes the permeation of the crosslinking agent. The first resist pattern 4 where the crosslinking agent permeates is irradiated with UV light to generate an acid, and is heated to react the resin component with the crosslinking agent so as to form a cured layer 9 in at least the surface layer portion 7. A second resist layer 11 is formed so as to fill a space between the first resist patterns, being selectively exposed to light and developed to form a second resist pattern 12.

Abstract translation: 要解决的问题：提供一种形成包含正化学放大抗蚀剂的多层抗蚀剂图案的方法，并提供使用多抗蚀剂图案的功能材料层的处理方法和多抗蚀剂图案结构。 ：形成第一抗蚀剂图案4，其包括含有光酸产生剂的阳性化学放大抗蚀剂和通过酸的作用显示溶解度变化的树脂组分。 图案的表面涂覆有含有交联剂的改性材料的水溶液6，该交联剂渗透到图案中并且可以通过酸的作用与抗蚀剂树脂组分进行交联，以及促进渗透的渗透促进剂 的交联剂。 用紫外线照射交联剂渗透的第一抗蚀剂图案4以产生酸，并加热以使树脂组分与交联剂反应，以在至少表面层部分7中形成固化层9。 第二抗蚀剂层11形成为填充第一抗蚀剂图案之间的空间，选择性地暴露于光并显影以形成第二抗蚀剂图案12。

公开(公告)号：JP2006343608A

公开(公告)日：2006-12-21

申请号：JP2005170306

申请日：2005-06-10

Applicant: SONY CORP

Inventor： MATSUZAWA NOBUYUKI

IPC: G03F7/075 ,  G03F7/20 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To provide a method for manufacturing a resist material for improving transmittance for light of a resist layer in a wavelength region of extreme UV rays, and to provide a resist material and an exposure method. SOLUTION: Silicon atoms are incorporated into a resist material to obtain a line absorption coefficient of 1.7433 μm -1 or less in an extreme UV wavelength region. The proportion (ϕ Si ) of silicon atom content in the polymer material and the density ρ of the polymer material are determined to satisfy formula (1). COPYRIGHT: (C)2007,JPO&INPIT

公开(公告)号：JP2006242974A

公开(公告)日：2006-09-14

申请号：JP2005054202

申请日：2005-02-28

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MATSUZAWA NOBUYUKI ,  WATANABE YOKO ,  BOONTARIKA THUNNAKART ,  OZAWA KEN ,  YAMAGUCHI YUKO

IPC: G02B1/11 ,  H01L21/027

CPC classification number: G03F7/091 ,  G03F7/70341

Abstract: PROBLEM TO BE SOLVED: To provide an antireflection film capable of sufficiently reducing reflectance at an interface between a resist layer and a silicon semiconductor substrate even when exposure light is made incident obliquely by one layer in a liquid immersion lithography technique. SOLUTION: The bi-layer structure antireflection film is used when a resist layer is exposed by means of an exposure system which has a wavelength of 190 to 195 nm and has a numerical aperture of ≤1.0, and is formed between the resist layer and the surface of the silicon semiconductor substrate. When complex refractive indexes N 1 , N 2 of upper layer and lower layer constituting the antireflection film are expressed by the expressions; N 1 =n 1 -k 1 i, N 2 =n 2 -k 2 i, film thicknesses of the upper layer and lower layer are d 1 , d 2 and a prescribed combination is selected as the combination of values [n 10 , k 10 , d 10 , n 20 , k 20 , d 20 ], n 1 , k 1 , d 1 , n 2 , k 2 , d 2 satisfy the following relation; ä(n 1 -n 10 )/(n 1m -n 10 )} 2 +ä(k 1 -k 10 )/(k 1m -k 10 )} 2 +ä(d 1 -d 10 )/(d 1m -d 10 )} 2 +ä(n 2 -n 20 )/(n 2m -n 20 )} 2 +ä(k 2 -k 20 )/(k 2m -k 20 )} 2 +ä(d 2 -d 20 )/(d 2m -d 20 )} 2 ≤1. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：即使在液浸光刻技术中将曝光光倾斜地入射一层时，提供能够充分降低抗蚀剂层和硅半导体基板之间的界面的反射率的抗反射膜。 解决方案：当通过具有190至195nm的波长并且具有数值孔径≤1.0的曝光系统曝光抗蚀剂层时，使用双层结构抗反射膜，并且形成在抗蚀剂之间 层和硅半导体衬底的表面。 当复合折射率N 1 时，构成防反射膜的上层和下层的N 2 由表达式表示; N 1 = n 1 i，N 2 = n 2 -k＆lt; SB＆gt; 2＆gt; i，上层和下层的膜厚为d SB <1>，d 2 ，并选择规定的组合作为组合 的值[n 10 ，k 10 ，d 10 ，20 SB>，d 20 ，n 1 ，k 1 ，d 1 / SB>，k 2 ，d 2 满足以下关系： A（N 1 -n 10 ）/（N 1M -n 10 ）} 2 < / SP> + A（K 1 -k 10 ）/（K 1M -k 10 ）} < SP> 2 + A（D 1 -d 10 ）/（D 1M -d 10 ）} 2 + A（N 2 -n 20 ）/（N 2米 -n 20 ）} 2 + A（K 2 -k 20 ）/（K 2米 - ķ 20 ）} 2 + A（D 2 -d 20 ）/（D 2米< / SB> -d 20 ）} 2 ≤1。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2003186197A

公开(公告)日：2003-07-03

申请号：JP2001385901

申请日：2001-12-19

Applicant: SONY CORP

Inventor： MATSUZAWA NOBUYUKI

IPC: G03F7/039 ,  G03F7/004 ,  H01L21/027

Abstract: PROBLEM TO BE SOLVED: To enable an ultra-microfabrication exceeding the conventional techniques by using a polymeric material having low absorption in the wavelength region of vacuum ultraviolet radiation (VUV). SOLUTION: In an exposure method in which a resist layer is selectively exposed with UV and patterned in a prescribed shape, a polymeric material having an introduced adamantane group in which two or more hydrogen atoms have been replaced with at least one selected from a fluorine atom, a trifluoromethyl group and a difluoromethylene group is used as a polymeric material forming the resist layer. COPYRIGHT: (C)2003,JPO