公开(公告)号：SG67363A1

公开(公告)日：1999-09-21

申请号：SG1996011093

申请日：1996-11-07

Applicant: SONY CORP

Inventor： NARUI HIRONOBU ,  DOI MASATO ,  SABERT HENDRIK

IPC: C30B29/66 ,  H01L21/205 ,  H01L27/15 ,  H01L31/12 ,  H01L31/036 ,  G11B7/135

Abstract: A triangular pyramidal semiconductor structure which precisely splits light is provided by preventing an unnecessary crystal plane from growing on the boundary of side surface crystal planes of the triangular pyramidal semiconductor structure. The triangular pyramidal semiconductor structure is formed of either one of a {111} A crystal plane and a {111} B crystal plane and two {110} crystal planes.

公开(公告)号：ID16077A

公开(公告)日：1997-09-04

申请号：ID963281

申请日：1996-11-11

Applicant: SONY CORP

Inventor： NARUI HIRONOBU ,  DOI MASATO

IPC: C30B29/66 ,  H01L21/205 ,  H01L27/15 ,  H01L31/12

Abstract: A triangular pyramidal semiconductor structure which precisely splits light is provided by preventing an unnecessary crystal plane from growing on the boundary of side surface crystal planes of the triangular pyramidal semiconductor structure. The triangular pyramidal semiconductor structure is formed of either one of a {111} A crystal plane and a {111} B crystal plane and two {110} crystal planes.

公开(公告)号：JP2013110374A

公开(公告)日：2013-06-06

申请号：JP2011283570

申请日：2011-12-26

Applicant: Sony Corp ,  ソニー株式会社

Inventor： YOKOZEKI MIKIHIRO ,  AOYANAGI HIDEKAZU ,  SHIOMI HARUNORI ,  KAWASAKI TAKAHIKO ,  ITO KATSUTOSHI ,  KOYAMA YUKIHIRO ,  NARUI HIRONOBU

IPC: H01L33/44

CPC classification number: H01L33/02 ,  H01L33/44

Abstract: PROBLEM TO BE SOLVED: To provide a light emitting element in which the nonradiative recombination at the end surface of an active layer is suppressed and its light emission efficiency is improved, and a method of manufacturing the light emitting element.SOLUTION: A light emitting element includes: a laminated body including a first conductive semiconductor layer, the active layer, and a second conductive semiconductor layer in this order, the second conductive semiconductor layer having a light extraction surface; and a recombination suppression structure provided at least in the vicinity of an end surface of the active layer, the recombination suppression structure having a bandgap larger than a bandgap of the active layer.

Abstract translation: 解决的问题：提供抑制有源层的端面的非辐射复合并提高其发光效率的发光元件，以及制造发光元件的方法。 解决方案：发光元件包括：依次包括第一导电半导体层，有源层和第二导电半导体层的层叠体，第二导​​电半导体层具有光提取表面; 以及至少在有源层的端面附近提供的复合抑制结构，所述复合抑制结构具有比有源层的带隙大的带隙。 版权所有（C）2013，JPO＆INPIT

公开(公告)号：JP2009246393A

公开(公告)日：2009-10-22

申请号：JP2009174008

申请日：2009-07-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OMAE AKIRA ,  SHIOMI HARUNORI ,  KAZETAGAWA MUNEYUKI ,  AMI TAKAAKI ,  MIYAJIMA TAKAO ,  HIRAMATSU YUJI ,  HATADA IZUHO ,  OKANO NOBUKATA ,  TOMITANI SHIGETAKA ,  YANASHIMA KATSUNORI ,  HINO TOMOKIMI ,  NARUI HIRONOBU

IPC: H01L33/06 ,  H01L33/08 ,  H01L33/16 ,  H01L33/22 ,  H01L33/32 ,  H01L33/40 ,  H01L33/62

CPC classification number: H01L2224/48091 ,  H01L2224/48465 ,  H01L2924/1305 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/00

Abstract: PROBLEM TO BE SOLVED: To provide a light-emitting diode with extremely high luminous efficiency, capable of being manufactured at low cost through a single processing of an epitaxial growth, and to provide a method of manufacturing the same. SOLUTION: A protrusion 12 is formed on one principal surface of a substrate 11, such as a sapphire substrate and the like, by means of a material different from that of the substrate 11. A nitride group III-V compound semiconductor layer 15 is grown up in a recess 13 having an invesely trapezoidal shape at both sides of the protrusion 12, in such structure as a pentagon-shaped sectional form by way of a triangular sectional form with the bottom of the recess 13 as the base of a triangle. Otherwise, the nitride group III-V compound semiconductor layer 15 is grown up in the lateral direction, after it is grown up to the triangular sectional shape with the bottom of the recess 13 as its base. The nitride group III-V compound semiconductor layer 15 with an active layer contained therein is grown up on the nitride group III-V compound semiconductor to constitute the structure of a light-emitting diode. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 要解决的问题：为了提供具有极高发光效率的发光二极管，能够通过外延生长的单一处理以低成本制造，并提供其制造方法。 解决方案：通过不同于衬底11的材料，在诸如蓝宝石衬底等的衬底11的一个主表面上形成突起12.氮化物III-V族化合物半导体层 在突出部12的两侧的长度方向成长的凹部13中，以凹凸部13的底部为三角形的三角形截面形状为五边形的结构， 三角形。 否则，氮化物III-V族化合物半导体层15在以凹槽13的底部为基底的三角形截面形状之后，沿横向长大。 其中含有活性层的氮化物III-V族化合物半导体层15在氮化物III-V族化合物半导体上生长，以构成发光二极管的结构。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2008159620A

公开(公告)日：2008-07-10

申请号：JP2006343263

申请日：2006-12-20

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OKANO NOBUKATA ,  OMAE AKIRA ,  YASUDA TOSHIKAZU ,  WATABE YOSHIAKI ,  KURAMOCHI NAOYOSHI ,  OHASHI TATSUO ,  HINO TOMOKIMI ,  NARUI HIRONOBU ,  MORI KOICHI

IPC: H01L33/16 ,  C30B25/02 ,  C30B29/38 ,  H01L21/205 ,  H01L33/32 ,  H01L33/56 ,  H01L33/62 ,  H01S5/323

CPC classification number: H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/00014

Abstract: PROBLEM TO BE SOLVED: To easily peel off a substrate inexpensively without giving physical damage to a nitride-based III-V group compound semiconductor layer after the nitride-based III-V group compound semiconductor layer forming a light-emitting diode structure is grown on the substrate. SOLUTION: Projections 12 made of magnetostriction material are formed on one main surface of a substrate 11, and a nitride-based III-V group compound semiconductor layer 15 is grown on recessed parts 13 among the projections 12, which has first a triangular sectional shape with a bottom side as their bottom surfaces, and is further grown from the nitride-based III-V group compound semiconductor layer 15 in horizontal direction. The nitride-based III-V group compound semiconductor layer including an active layer 17 is grown on the nitride-based III-V group compound semiconductor layer 15 to form a light emitting diode structure. Then, magnetic field is applied to the projections 12 to generate magnetostriction, so as to peel off the nitride-based III-V group compound semiconductor layers from the substrate 11. COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：在形成发光二极管结构的氮化物III-V族化合物半导体层之后，为了容易地剥离基板而不会对基于氮化物的III-V族化合物半导体层造成物理损伤 在基底上生长。 解决方案：由磁致伸缩材料制成的突起12形成在基板11的一个主表面上，并且氮化物基III-V族化合物半导体层15生长在突起12中的凹陷部分13上，该突起12首先具有 三角形截面形状，其底侧为其底面，并且从氮化物基III-V族化合物半导体层15进一步在水平方向上生长。 在氮化物系III-V族化合物半导体层15上生长含有活性层17的氮化物系III-V族化合物半导体层，形成发光二极管结构。 然后，将磁场施加到突起12以产生磁致伸缩，从而从基板11剥离基于氮化物的III-V族化合物半导体层。版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006245615A

公开(公告)日：2006-09-14

申请号：JP2006158766

申请日：2006-06-07

Applicant: Sony Corp ,  ソニー株式会社

Inventor： WATABE YOSHIAKI ,  NARUI HIRONOBU ,  KUROMIZU YUUICHI ,  YAMAUCHI YOSHINORI ,  TANAKA YOSHIYUKI

IPC: H01S5/183

Abstract: PROBLEM TO BE SOLVED: To provide a surface emission semiconductor laser device which emits stable a laser beam by a unimodal lateral mode, and to provide a manufacturing method therefor. SOLUTION: The device includes a lower reflecting mirror 14 consisting of a semiconductor multilayer film, an active layer 18 and an upper reflecting mirror 22 consisting of a semiconductor multilayer film, in this order on a substrate 12. The device includes a compound semiconductor layer 24 extending to the upper reflecting mirror 22, provided with a first opening part 30 for exposing the upper reflecting mirror 22, and a metal film 36 extending on the compound semiconductor layer 24, provided with a second opening part 38 for exposing the upper reflecting mirror 22 inside of the first opening 30. The inside diameter of the first opening part 30 is set larger than that of the second opening part 38. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种通过单峰横向模式发射稳定的激光束的表面发射半导体激光器件，并提供其制造方法。 解决方案：该装置在基板12上依次包括由半导体多层膜，有源层18和由半导体多层膜构成的上反射镜22构成的下反射镜14.该装置包括化合物 半导体层24延伸到上反射镜22，设置有用于暴露上反射镜22的第一开口部分30和在化合物半导体层24上延伸的金属膜36，设置有用于暴露上反射镜22的第二开口部分38 反射镜22位于第一开口30的内部。第一开口部30的内径设定为大于第二开口部38的内径。（C）2006年，JPO＆NCIPI

公开(公告)号：JP2006210430A

公开(公告)日：2006-08-10

申请号：JP2005017356

申请日：2005-01-25

Applicant: Sony Corp ,  ソニー株式会社

Inventor： MASUI TAKESHI ,  NARUI HIRONOBU ,  HINO TOMOKIMI ,  WATABE YOSHIAKI ,  YAMAUCHI YOSHINORI ,  YAMAGUCHI NORIHIKO

IPC: H01S5/183

Abstract: PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser in which reliability of an element is improved.
SOLUTION: A lower DBR mirror layer 11 and an upper DBR mirror layer 15 each have a structure in which a plurality of combinations of high refractive index layer 11Ai (15Aj) and a low refractive index layer 11Bi (15Bj) are laminated. In each of the DBR mirror layers 11 and 15 of the plurality of layers 11Ai (15Aj), the impurity concentration of a layer near an active layer 13 is lower (first impurity concentration) than that of a layer other than the layer near the active layer 13. Also, of the plurality of layers 11Bi (15Bj), the impurity concentration of the layer near the active layer 13 is higher (second impurity concentration) than the first impurity concentration in the layers 11Ai (15Aj).
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种元件的可靠性提高的表面发射半导体激光器。 解决方案：下DBR镜层11和上DBR镜层15各自具有层叠高折射率层11Ai（15Aj）和低折射率层11Bi（15Bj）的多个组合的结构。 在多个层11Ai（15Aj）的每个DBR镜层11和15中，有源层13附近的层的杂质浓度比活性层附近的层以外的层低（第一杂质浓度） 此外，在多层11Bi（15Bj）中，有源层13附近的层的杂质浓度比层11Ai（15Aj）中的第一杂质浓度高（第二杂质浓度）。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005347743A

公开(公告)日：2005-12-15

申请号：JP2005139196

申请日：2005-05-12

Applicant: Sony Corp ,  ソニー株式会社

Inventor： WATABE YOSHIAKI ,  NARUI HIRONOBU ,  KUROMIZU YUUICHI ,  YAMAUCHI YOSHINORI ,  TANAKA YOSHIYUKI

IPC: H01L21/316 ,  H01L21/338 ,  H01L21/76 ,  H01L29/778 ,  H01L29/812 ,  H01S5/183

Abstract: PROBLEM TO BE SOLVED: To provide a method of manufacturing a surface emitting semiconductor laser capable of lasing by a unimodal beam in a single lateral mode or the like easily and with a high yield.
SOLUTION: In manufacturing the surface emitting semiconductor laser having a post mesa structure on an n-type semiconductor substrate 11, a mesa portion is formed. After forming the mesa portion to a p-side electrode 20 and an n-side electrode 23, voltage is applied between the p-side electrode 20 and the n-side electrode 23. While drawing out output light, the surface emitting semiconductor laser is exposed to a steam atmosphere to form an Al oxidation layer 21 on a p-type Al
w Ga
1-w As layer 17b which is the most upper layer of a p-type DBR layer 17, and to form a refractive index distribution like that of a concave lens.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种能够容易地并且以高产率制造能够以单一横模式等的单峰光束进行激光的表面发射半导体激光器的制造方法。 解决方案：在制造在n型半导体衬底11上具有后台面结构的表面发射半导体激光器时，形成台面部分。 在形成台面部分到p侧电极20和n侧电极23之后，在p侧电极20和n侧电极23之间施加电压。在引出输出光的同时，表面发射半导体激光器 暴露于蒸汽气氛下，在作为p层的最上层的p型AlSb层上形成Al氧化层21， 类型DBR层17，并且形成像凹透镜的折射率分布。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005338203A

公开(公告)日：2005-12-08

申请号：JP2004154122

申请日：2004-05-25

Applicant: Sony Corp ,  ソニー株式会社

Inventor： NARUI HIRONOBU ,  TAMADA HITOSHI ,  TAKEGAWA HIROSHI ,  NAGASHIMA KENJI ,  UMEZAWA ISAO ,  HONDA KAZUO

IPC: G02B26/08 ,  G02B26/10 ,  G02B27/02 ,  G09G3/02 ,  H04N5/74

Abstract: PROBLEM TO BE SOLVED: To provide a compact and light weighted image displaying apparatus which reduces a burden of a user's eye in a wearable display.
SOLUTION: The present invention relates to the image displaying apparatus 1 comprising: an optical fiber 2 which propagates laser light outputted from an external laser light source 11 into a body case 10; a signal cable 3 which propagates an image signal generated with an external image generating apparatus 12 into the body case 10; a modulation means 4 which is provided in the body case 10 and modulates the laser beam obtained by the propagation in the optical fiber 2 on the basis of the image signal obtained by the propagation in the signal cable 3; a scan mirror 5 which is provided in the body case 10 and scans the laser beam modulated with the modulation means 4; and a diffusing plate 6 which is provided in the body case 10 and diffuses the laser beam scanned with the scan mirror 5.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种紧凑且轻量化的图像显示装置，其减少了佩戴显示器中的用户眼睛的负担。 解决方案：本发明涉及图像显示装置1，其包括：将从外部激光光源11输出的激光传播到主体壳体10中的光纤2; 将由外部图像生成装置12生成的图像信号传播到主体壳体10的信号电缆3; 调制装置4，其设置在主体壳体10中，并且基于通过在信号电缆3中的传播获得的图像信号来调制由光纤2中的传播获得的激光束; 扫描镜5，其设置在主体壳体10中，并扫描用调制装置4调制的激光束; 以及扩散板6，其设置在主体壳体10中并且漫射用扫描反射镜5扫描的激光束。（C）2006年，JPO和NCIPI

公开(公告)号：JP2005268647A

公开(公告)日：2005-09-29

申请号：JP2004081241

申请日：2004-03-19

Applicant: Sony Corp ,  ソニー株式会社

Inventor： SATO YASUO ,  HINO TOMOKIMI ,  NARUI HIRONOBU

IPC: C30B25/18 ,  C30B29/40 ,  H01L21/20 ,  H01L21/205 ,  H01L29/15 ,  H01L31/0312 ,  H01L31/10 ,  H01L31/103 ,  H01L31/18 ,  H01L33/12 ,  H01L33/30 ,  H01L33/34 ,  H01L33/00

CPC classification number: C30B25/18 ,  C30B29/40 ,  H01L21/02381 ,  H01L21/02395 ,  H01L21/02463 ,  H01L21/02505 ,  H01L21/0251 ,  H01L21/02543 ,  H01L21/02546 ,  H01L21/0262 ,  H01L31/1035 ,  H01L31/1844 ,  H01L31/1852 ,  H01L33/0062 ,  Y02E10/544 ,  Y02P70/521

Abstract: PROBLEM TO BE SOLVED: To provide a compound semiconductor which has a base plate and a compound semiconductor layer formed on the base plate and has a lattice mismatch of 2% or higher between the base plate and the compound semiconductor layer, and which can reduce generation of crystalline defect or dislocation. SOLUTION: A first epitaxial growth step of forming a buffer layer 3 on a base plate and a second epitaxial growth step of forming a compound semiconductor layer 4 on the buffer layer 3 are carried out at a growth temperature of ≤600°C by an MOCVD (metal organic chemical vapor deposition) method. When the growth temperature is selected, compatibility among the reduction of crystalline defect in the compound semiconductor layer 4, the maintenance or improvement of a dissociation efficiency of a source material such as group V and III elements, and the prevention of reduction of a growth rate can be attained. COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供一种化合物半导体，其具有在基板上形成的基板和化合物半导体层，并且在基板和化合物半导体层之间具有2％以上的晶格失配，并且其中 可以减少晶体缺陷或脱位的发生。 解决方案：在底板上形成缓冲层3的第一外延生长步骤和在缓冲层3上形成化合物半导体层4的第二外延生长步骤在生长温度≤600℃下进行 通过MOCVD（金属有机化学气相沉积）方法。 当选择生长温度时，化合物半导体层4中的晶体缺陷的还原之间的相容性，维持或提高诸如V族和III族元素的源材料的解离效率以及防止生长速率降低 可以实现。 版权所有（C）2005，JPO＆NCIPI