Abstract:
An n-type GaN layer is grown onto a sapphire substrate and a hexagonal etching mask is formed onto the n-type GaN layer. The n-type GaN layer is etched to a predetermined depth by using the etching mask by the RIE method. A hexagonal prism portion whose upper surface is a C plane is formed. After the etching mask was removed, an active layer and a p-type GaN layer are sequentially grown onto the whole surface of the substrate so as to cover the hexagonal prism portion, thereby forming a light emitting device structure. After that, a p-side electrode is formed onto the p-type GaN layer of the hexagonal prism portion and an n-side electrode is formed onto the n-type GaN layer.
Abstract:
An optical device comprises a substrate, a light-emitting portion, and a plurality of light-receiving portions, the light-emitting portion and a plurality of light-receiving portions being closely laminated on the same substrate, wherein returned light obtained after light emitted from a resonator end face of the light-emitting portion has been reflected on an irradiated portion is received and detected near a confocal point by a plurality of light-receiving portions. In this optical device such as an optical pickup, the number of optical assemblies can be reduced, an alignment for disposing optical assemblies can be simplified, the whole of the optical device can be simplified and miniaturized, and a stable tracking servo can be effected by effectively utilizing advantages of a push-pull method.
Abstract:
An optical device has an optical element 21 comprising a light-emitting region 1 and a light-detecting region 4 disposed closely to each other on a common substrate 9. Returning light LR from an irradiated medium which is irradiated with light L emitted by the light-emitting region 1 is detected by the light-detecting region 4. The returning light is applied to a light-detecting region 4 at an incident angle alpha in the range of 0 DEG
Abstract:
An optical device structure can be simplified and miniaturized on the whole. A fabrication of optical device can be simplified and the optical device can be improved in reliability. The optical device can increase its output, operate a light emitting light source with a reduced power and reduce a power consumption by increasing a quantity of reflected-back light to a photosensor device, i.e., a quantity of photosensed light. An optical device includes a light emitting section (1), a radiated section (2), a converging means (3) and a photosensor section (4). Light emitted from the light emitting section (1) is converged and radiated on the radiated section (2) by the converging means (3). Reflected-back light (LR) reflected from the radiated section (2) is converged and the photosensor section (4) is disposed near a confocal of the converging means (3) concerning reflected-back light from the radiated section (2). Light emitted from the light emitting section (1) is passed through a path of the same axis and photosensed by the photosensor section (4) as shown by a one-dot chain line (a) representing the optical axis before and after the emitted light is reflected by the radiated section (2).
Abstract:
A semiconductor light-emitting element is provided which has a structure that does not complicate a fabrication process, can be formed in high precision and does not invite any degradation of crystallinity. A light-emitting element is formed, which includes a selective crystal growth layer formed by selectively growing a compound semiconductor of a Wurtzite type, a clad layer of a first conduction type, an active layer and a clad layer of a second conduction type, which are formed on the selective crystal growth layer wherein the active layer is formed so that the active layer extends in parallel to different crystal planes, the active layer is larger in size than a diffusion length of a constituent atom of a mixed crystal, or the active layer has a difference in at least one of a composition and a thickness thereof, thereby forming the active layer having a number of light-emitting wavelength regions whose emission wavelengths differ from one another. The element is so arranged that an electric current or currents are chargeable into the number of light-emitting wavelength regions. Because of the structure based on the selective growth, the band gap energy varies within the same active layer, thereby forming an element or device in high precision without complicating a fabrication process.
Abstract:
A semiconductor laser and an optical device employing the semiconductor laser are described. The semiconductor laser comprises and activating layer; first and second cladding layers for sandwiching the activating layer, the energy gaps of which are greater than that of the activating layer; a current blocking layer provided in contact with both sides of the activating layer; a first electrode electrically connected to the first cladding layer; and a second electrode electrically connected to the second cladding layer. The activating layer has a structure that the activating layer is two-dimensionally confined within the first cladding layer, the second cladding layer, and the current blocking layer, reflectivity of at least on end face of a resonator of the activating layer is less than, or equal to 5%, and loss in the resonator of the activating layer is higher than, or equal to 100 cm .
Abstract:
An optical device for detecting a magneto-optical signal can be simplified and miniaturized in arrangement. An optical device for detecting a magneto-optical signal includes an optical element (1) in which a light-emitting portion and a light receiving portion are closely disposed on a common substrate and in which reflected-back light obtained from a magneto-optical medium (36) after light from the light-emitting portion was reflected on the magneto-optical medium (36) is detected at a position near confocal position by the light receiving portion and another light receiving element (32). The reflected-back light from the magneto-optical medium (36) is divided. One reflected-back light is detected by the light receiving portion of the optical element 1 and the other reflected-back light is detected by another light receiving element (32).
Abstract:
An optical device for detecting a magneto-optical signal can be simplified and miniaturized in arrangement. An optical device for detecting a magneto-optical signal includes an optical element (1) in which a light-emitting portion and a light receiving portion are closely disposed on a common substrate and in which reflected-back light obtained from a magneto-optical medium (36) after light from the light-emitting portion was reflected on the magneto-optical medium (36) is detected at a position near confocal position by the light receiving portion and another light receiving element (32). The reflected-back light from the magneto-optical medium (36) is divided. One reflected-back light is detected by the light receiving portion of the optical element 1 and the other reflected-back light is detected by another light receiving element (32).
Abstract:
A semiconductor laser and an optical device employing the semiconductor laser are described. The semiconductor laser comprises and activating layer; first and second cladding layers for sandwiching the activating layer, the energy gaps of which are greater than that of the activating layer; a current blocking layer provided in contact with both sides of the activating layer; a first electrode electrically connected to the first cladding layer; and a second electrode electrically connected to the second cladding layer. The activating layer has a structure that the activating layer is two-dimensionally confined within the first cladding layer, the second cladding layer, and the current blocking layer, reflectivity of at least on end face of a resonator of the activating layer is less than, or equal to 5%, and loss in the resonator of the activating layer is higher than, or equal to 100 cm .