Abstract:
PROBLEM TO BE SOLVED: To provide a simplified and reliable laser processing method in which both improvement of a manufacture yield and reduction of manufacture throughput are obtained. SOLUTION: The laser processing method includes: the steps of selecting a wavelength of laser light based on a reflectance of a multilayer film formed of two or more layers with different materials of a processing object 3; and irradiating the processing object 3 with the laser light to perform laser processing. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device with high efficiency of light extraction. SOLUTION: The semiconductor light-emitting device comprises a light emitter 10 constituted by carrying out flip chip connection of a semiconductor chip 30 through a projection electrode 40 on an intermediate substrate 20, and a sealing part 50 formed on the semiconductor chip 30. The sealing part 50 is constituted of a thermosetting resin with a high refractive index (its refractive index is ≥1.6 and ≤1.8). Consequently, in the case where the front surface of the light-emitting side of the semiconductor chip 30 is constituted of a material which has a higher refractive index than that of an epoxy resin, a silicon resin or the like (each refractive index is about 1.5), for example, such as a sapphire (its refractive index is about 1.76), a critical angle in an interface 31A of a substrate 31 and the sealing part 50 becomes extremely large, when light progresses to the side of the sealing part 50 from the side of the substrate 31, in comparison with the case where a low refractive-index material, such as an epoxy resin or a silicon resin, is used as a material of the sealing part 50. COPYRIGHT: (C)2008,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To make uniformity of luminescence satisfactory, and reduce the thickness of the whole back-light. SOLUTION: The back-light device includes two or more light-emitting units 21 wherein two or more light-emitting diodes 21R, 21G, 21B for emitting, at least, red light, green light, and blue light, respectively, are arranged on a rotary disk 22 rotated at a constant speed, and a driving current is supplied to the respective light-emitting diodes 21R, 21G, 21B from an LED driving circuit 25 through brushes 24r, 24g, 24b, and thereby the respective light-emitting diodes 21R, 21G, 21B emit, at least, red light, green light, and blue light, respectively, while they are being rotated at a constant speed. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract:
PROBLEM TO BE SOLVED: To provide a display whose life and reliability are improved. SOLUTION: The display has a cathode layer 16 on which an adsorbing layer 17 whose end portion covers an insulating layer 14 is formed. The thickness of the adsorbing layer 17 is, for example, 100nm to 500nm, and the advsorbing layer 17 consists of getter materials such as titanium (Ti), zirconium (Zr), hafnium (Hf), tantalum (Ta), niobium (Nb), vanadium (V), barium (Ba), strontium (Sr), calcium (Ca), platinum (Pt), palladium (Pd) or nickel (Ni). Oxygen and water vapor are absorbed into the absorbing layer 17 by its gettering action. Thereby, it is prevented that water vapor and oxygen infiltrate into an organic electro-luminescence layer 13 in the manufacturing process of the device or after completion of the device. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide a display device with a simple structure improvable in luminescence unevenness, and to provide a manufacturing method therefor. SOLUTION: In this display device, a drive circuit substrate 20 is oppositely disposed on the side of organic luminescent elements 10R, 10G and 10B of a display panel 10. An insulation layer 15 covering the organic luminescence elements 10R, 10G and 10B is formed with a first opening 15A and a second opening 15B in each of the organic luminescence elements 10R, 10G and 10B. The first opening 15A and the second opening 15B are filled and formed with a first electroconductive connection part 16A and a second electroconductive connection part 16B. The first electroconductive connection part 16A directly electrically connects a first connection part 21A of the drive circuit substrate 20 and a transparent electrode 12, while the second electroconductive connection part 16B directly electrically connects a second connection part 21B of the drive circuit substrate 20 and a back electrode 14. COPYRIGHT: (C)2004,JPO
Abstract:
PROBLEM TO BE SOLVED: To provide an etching method by which etch pits can be produced easily and safely, a crystallinity evaluating method using the etching method, and a semiconductor device manufacturing method using the crystallinity evaluating method. SOLUTION: A sample 10, in which a semiconductor layer composed of a III nitride compound semiconductor is formed on a substrate, is placed on a pedestal 22 set up in a reaction tube 21. An etching gas containing hydrogen chloride and nitrogen is supplied to the tube 21 through a gas supplying tube 25. The internal temperature of the reaction tube 21 is raised to a value between 500 deg.C and 900 deg.C by means of a lamp alloy furnace 23 and maintained at the value for about 20 minutes. Consequently, the semiconductor layer of the sample 10 is etched and etch pits are produced on the surface of the semiconductor layer. Then the sample 10 is taken out of the reaction tube 21, and the density of the etch pits is observed under a SEM. Therefore, the crystallinity of the semiconductor layer can be evaluated.
Abstract:
PURPOSE:To obtain a light-emitting element in which an undesirable crystal face does not have a bad influence on an element characteristic even when the undesirable crystal face is formed on a compound semiconductor crystal layer by a method wherein a protrusion region is extracted from a light-emitting region near a light-radiating face in the direction of a compound semiconductor substrate. CONSTITUTION:A light-emitting element is composed of a compound semiconductor crystal layer 20 formed on a compound semiconductor substrate, and the crystal layer 20 is composed of a light-emitting region 22 and of protrusion regions 24, 26. The protrusion regions 24, 26 are extended from the light-emitting region 22 near light-emitting surface 22B, 22D in the [-2, 1, 1]s direction of the compound semiconductor substrate. (-1, 0, -1)c faces 24A, 26A and (-1, -1, 0)c faces 24B, 26B are formed in end-part regions in the protrusion regions 24, 26 in the [-2, 1, 1]s direction of the compound semiconductor substrate. However, the crystal faces 24A, 24B, 26A, 26B are away from the light-emitting surface 22B, 22D in the light-emitting element, they do not have a bad influence on the surfaces.
Abstract:
PROBLEM TO BE SOLVED: To improve cooling efficiency by arranging guiding members guiding cool air to heat radiation fins. SOLUTION: An air flow space 19 where the cooling air is made to flow by the arranging face part and the case by arranging a case 5 having an arranging face part 6 formed by heat conductive material, a plurality of light sources 10b arranged on a face at one side of the arranging face part, heat radiation fins 12, 12, ... arranged on a position of a face part at the other side of arranging face part facing the plurality of the light sources, and a cover 14 fixed to the case, blocking the heat radiation fins. Suction holes 17a taking the cooling air in the air flow space, are formed on the cover, and exhaust fans 20 exhausting cooling air flown through the fixed air flow space, are arranged on an external face of the cover. Guiding members 13 guiding the cooling air taken in from suction holes to the heat radiation fins, are arranged on the air flow space. COPYRIGHT: (C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a light pickup lens that is excellent in productivity and has a structure less likely to cause defects during manufacture and less likely to cause variations in shape during mass production. SOLUTION: The light pickup lens has a surface light source 13 having a finite size disposed at the center of a bottom surface 11, wherein a top surface 15 consists of an aspherical surface that is used to totally reflecting part of a radiation light component having a polar angle smaller than an polar angle θ 0 at the intersection between a side surface 14 and the top surface 15 and is rotary-symmetrical with respect to z-axis, and the side surface 14 consists of an aspherical surface that is used to transmit a radiation light component having a polar angle larger than an polar angle θ 0 and a radiation light component totally reflected by the top surface 15 and is rotary-symmetric with respect to z-axis, and has, in a function r=f s (z) with z representing the side surface 14 being as a variable, at least one point at which the function r=f s (z) increases monotonously when z decreases in a closed interval of 0≤z≤z 1 (the z coordinate of a portion where the side surface 14 and the top surface 15 cross each other), and at which ¾d 2 r/dz 2 ¾ is maximal in the closed interval. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation:要解决的问题:提供一种生产率优异并且具有在制造过程中不太可能引起缺陷的结构并且在大规模生产期间不太可能导致形状变化的光拾取透镜。 解决方案:光拾取透镜具有设置在底表面11的中心处的具有有限尺寸的表面光源13,其中顶表面15由用于完全反射部分辐射光的非球面组成 在侧面14与顶面15之间的交叉处具有小于极角θ 0 SB>的极角并且相对于z轴旋转对称的部件,并且侧面14包括 用于透射具有大于极角θ 0°的极角的辐射光分量的非球面和由顶表面15全反射的辐射光分量,并且相对于 以z表示侧表面14为变量的函数r = f SB SB(z)中的至少一个点,函数r = f SB 当z在0≤z≤z 1 SB>的闭合间隔(z的z坐标)时z(z)单调增加 其中侧表面14和顶表面15彼此交叉),并且在闭合间隔中¾d 2 SP> r / dz 2 SP>¾是最大的。 版权所有(C)2007,JPO&INPIT
Abstract:
PROBLEM TO BE SOLVED: To provide a light emitting diode module for enabling radiation of lights in the equal radiation characteristic from a plurality of light emitting diodes. SOLUTION: The light emitting diode module comprises light emitting diodes 10B, 10G, and 10R of at least two or more colors. The lights emitted from the light emitting diodes 10B, 10G, and 10R are respectively radiated independently. Moreover, the chips 10B, 10G, and 10R of the light emitting diodes form a light emitting diode module 20 wherein these chips are laminated almost in the vertical direction. COPYRIGHT: (C)2007,JPO&INPIT