公开(公告)号：DE60037996D1

公开(公告)日：2008-03-27

申请号：DE60037996

申请日：2000-12-07

Applicant: SONY CORP

Inventor： TOMIOKA SATOSHI

IPC: H01L21/205 ,  H01S5/343 ,  C30B25/02 ,  H01L21/20 ,  H01L21/203 ,  H01L33/32

Abstract: Provided is a method of manufacturing a nitride system III-V compound layer which improves the quality and facilitates the manufacturing process and a method of manufacturing a substrate employing the method of manufacturing a nitride system III-V compound layer. A first growth layer (31) is grown on a growth base (10) at a growth rate, in a vertical direction to the growth surface, higher than 10 mu m/h. Subsequently, a second growth layer (32) is grown at a growth rate, in a vertical direction to the growth surface, lower than 10 mu m/h. The first growth layer (31) grown at the higher growth rate has a rough surface. However, the second growth layer (32) is grown at the lower growth rate than that used for growing the first growth layer (31), so that depressions of the surface of the first growth layer (31) are filled and thus the surface of the second growth layer (32) is flattened. Further, growth takes place laterally so as to fill the depressions of the surface of the first growth layer (31). Thus, dislocation extending from the first growth layer (31) bends laterally and density of dislocation propagating to the surface of the second growth layer (32) is greatly lowered.

公开(公告)号：DE69711344T2

公开(公告)日：2002-11-14

申请号：DE69711344

申请日：1997-12-05

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  IKEDA MASAO ,  TOMIOKA SATOSHI

IPC: H01L21/205 ,  C30B25/02 ,  H01L21/20 ,  H01L21/203 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  C30B29/40

Abstract: A method for growing nitride III-V compound semiconductor layers, comprises the steps of: growing a first BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1 and w+x+y+z=1) on a substrate by first vapor deposition at a growth rate not higher than 4 mu m/h; and growing a second BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1 and w+x+y+z=1) on the first BwAlxGayInzN layer by second vapor deposition at a growth rate higher than 4 mu m/h and not higher than 200 mu m/h. A method for fabricating a nitride III-V compound semiconductor substrate, comprises the steps of: growing a first BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1 and w+x+y+z=1) on a substrate by first vapor deposition at a growth rate not higher than 4 mu m/h; growing a second BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤y≤1 and w+x+y+z=1) on the first BwAlxGayInzN layer by second vapor deposition at a growth rate higher than 4 mu m/h and not higher than 200 mu m/h; and removing the substrate.

公开(公告)号：DE60037996T2

公开(公告)日：2009-02-26

申请号：DE60037996

申请日：2000-12-07

Applicant: SONY CORP

Inventor： TOMIOKA SATOSHI

IPC: H01L21/205 ,  H01S5/343 ,  C30B25/02 ,  H01L21/20 ,  H01L21/203 ,  H01L33/32

Abstract: Provided is a method of manufacturing a nitride system III-V compound layer which improves the quality and facilitates the manufacturing process and a method of manufacturing a substrate employing the method of manufacturing a nitride system III-V compound layer. A first growth layer (31) is grown on a growth base (10) at a growth rate, in a vertical direction to the growth surface, higher than 10 mu m/h. Subsequently, a second growth layer (32) is grown at a growth rate, in a vertical direction to the growth surface, lower than 10 mu m/h. The first growth layer (31) grown at the higher growth rate has a rough surface. However, the second growth layer (32) is grown at the lower growth rate than that used for growing the first growth layer (31), so that depressions of the surface of the first growth layer (31) are filled and thus the surface of the second growth layer (32) is flattened. Further, growth takes place laterally so as to fill the depressions of the surface of the first growth layer (31). Thus, dislocation extending from the first growth layer (31) bends laterally and density of dislocation propagating to the surface of the second growth layer (32) is greatly lowered.

公开(公告)号：SG137661A1

公开(公告)日：2007-12-28

申请号：SG2004002945

申请日：2004-01-19

Applicant: SONY CORP ,  AGENCY SCIENCE TECH & RES

Inventor： TONG CHENG CHEOW ,  BIING YEO CHING ,  YEE LOW HONG ,  DONGZHI CHI ,  TOMIOKA SATOSHI ,  OHSAKO JUNICHI

IPC: C23C28/00 ,  C23C16/00

公开(公告)号：DE69711344D1

公开(公告)日：2002-05-02

申请号：DE69711344

申请日：1997-12-05

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  IKEDA MASAO ,  TOMIOKA SATOSHI

IPC: H01L21/205 ,  C30B25/02 ,  H01L21/20 ,  H01L21/203 ,  H01L33/12 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  C30B29/40

Abstract: A method for growing nitride III-V compound semiconductor layers, comprises the steps of: growing a first BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1 and w+x+y+z=1) on a substrate by first vapor deposition at a growth rate not higher than 4 mu m/h; and growing a second BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1 and w+x+y+z=1) on the first BwAlxGayInzN layer by second vapor deposition at a growth rate higher than 4 mu m/h and not higher than 200 mu m/h. A method for fabricating a nitride III-V compound semiconductor substrate, comprises the steps of: growing a first BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤z≤1 and w+x+y+z=1) on a substrate by first vapor deposition at a growth rate not higher than 4 mu m/h; growing a second BwAlxGayInzN layer (where 0≤w≤1, 0≤x≤1, 0≤y≤1, 0≤y≤1 and w+x+y+z=1) on the first BwAlxGayInzN layer by second vapor deposition at a growth rate higher than 4 mu m/h and not higher than 200 mu m/h; and removing the substrate.

公开(公告)号：EP2966430A4

公开(公告)日：2017-01-11

申请号：EP14759671

申请日：2014-02-18

Applicant: SONY CORP

Inventor： TOMIOKA SATOSHI

IPC: G01M11/00 ,  G01J3/50 ,  G01N21/88 ,  G02F1/13 ,  G06T7/00 ,  G06T7/40 ,  H04N9/07 ,  H04N17/02 ,  H04N17/04

CPC classification number: G01N21/8851 ,  G01J3/506 ,  G01N2201/062 ,  G02F1/1309 ,  G06T7/0004 ,  G06T7/44 ,  G06T7/90 ,  G06T2207/10024 ,  G06T2207/30121 ,  G09G2320/0233 ,  G09G2320/0242 ,  G09G2320/0693 ,  H04N9/07 ,  H04N17/04

Abstract: An unevenness inspection system includes: an image pickup section configured to acquire a picked-up image of an inspection target; an image generation section configured to generate a color-unevenness inspection image and a luminance-unevenness inspection image, based on the picked-up image; a calculation section configured to use both of the color-unevenness inspection image and the luminance-unevenness inspection image to calculate an evaluation parameter; and an inspection section configured to use the calculated evaluation parameter to perform unevenness inspection. The image generation section performs image separation processing to separate a color component and a luminance component on the picked-up image, to generate a color-component image and a luminance-component image, and individually performs filter processing taking account of visual spatial frequency characteristics on the color-component image and the luminance-component image to respectively generate the color-unevenness inspection image and the luminance-unevenness inspection image, based on the filter-processed color-component image and the filter-processed luminance-component image. The calculation section calculates the evaluation parameter in consideration of unevenness visibility with respect to both of color and luminance.

公开(公告)号：JP2008063221A

公开(公告)日：2008-03-21

申请号：JP2007246930

申请日：2007-09-25

Applicant: Sony Corp ,  ソニー株式会社

Inventor： TOMIOKA SATOSHI

IPC: C30B29/38 ,  C23C16/34 ,  C30B25/02 ,  H01L21/205 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a group III-V nitride-based compound layer which has improved qualities and is obtained by a simplified manufacturing process, and to provide a substrate using the same.
SOLUTION: A first growth layer 21 is grown on a base body 10 for growth in such a manner that the growth velocity in the direction perpendicular to the growth surface is higher than 10 μm/h. A second growth layer 22 is then grown in such a manner that the growth velocity in the direction perpendicular to the growth surface is not higher than 10 μm/h. Although the surface of the first growth layer 21 is coarse, the recesses in the surface of the first growth layer 21 are buried and the surface of the second growth layer 22 is flattened by growing the second growth layer 22 at a growth velocity lower than that of the first growth layer 21. Since the second growth layer 22 grows in a lateral direction so as to bury each recess in the surface of the first growth layer 21, each dislocation D taken over from the first growth layer 21 is bent in a lateral direction at a projected part of the surface, and the density of dislocations D propagated to the surface of the second growth layer 22 is largely reduced and becomes 10
6 pieces/cm
2 order.
COPYRIGHT: (C)2008,JPO&INPIT

Abstract translation: 要解决的问题：提供具有改进的质量并通过简化制造工艺获得的III-V族氮化物基化合物层，并提供使用其的基板。 解决方案：第一生长层21在基体10上生长，以使生长面垂直的方向的生长速度高于10μm/ h。 然后以与生长表面垂直的方向上的生长速度不高于10μm/ h的方式生长第二生长层22。 虽然第一生长层21的表面是粗糙的，但第一生长层21的表面中的凹槽被埋入，并且通过以比生长层22低的生长速度生长第二生长层22来平坦化第二生长层22的表面。 由于第二生长层22沿横向生长以便将第一生长层21的表面中的每个凹部埋入，从第一生长层21取下的每个位错D被弯曲成侧向 方向在表面的突出部分，并且传播到第二生长层22的表面的位错D的密度被大大降低，并且变得为10×SP＆lt; SP＆gt; 订购。 版权所有（C）2008，JPO＆INPIT

公开(公告)号：JP2006310044A

公开(公告)日：2006-11-09

申请号：JP2005130085

申请日：2005-04-27

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OMI MOTOSUKE ,  TOMIOKA SATOSHI

IPC: F21V29/00 ,  F21S2/00 ,  F21Y101/02 ,  G02F1/13357

Abstract: PROBLEM TO BE SOLVED: To cool light emitting diodes without taking in dust or the like, and to reduce differences in a temperature distribution.
SOLUTION: In this backlight device in which a plurality of light sources 21 are disposed to illuminate a transmission type display panel from its back side, a cooling part 30 in which a passage 31 for cooling water to circulate is provided just under the light sources 21.
COPYRIGHT: (C)2007,JPO&INPIT

Abstract translation: 要解决的问题：为了冷却发光二极管而不吸入灰尘等，并且减少温度分布的差异。 解决方案：在该背光装置中，设置多个光源21以从其背面照亮透射型显示面板，在冷却部30中设置用于冷却水循环的通道31的冷却部30， 光源21.版权所有（C）2007，JPO＆INPIT

公开(公告)号：JP2006145885A

公开(公告)日：2006-06-08

申请号：JP2004336376

申请日：2004-11-19

Applicant: Sony Corp ,  ソニー株式会社

Inventor： OSHIMA YOSHIHIRO ,  HAYASHI MASAYASU ,  KAWASHIMA TOSHITAKA ,  TOMIOKA SATOSHI

IPC: G02B5/28 ,  F21S2/00 ,  F21V9/08 ,  F21Y101/02 ,  G02F1/1335 ,  G02F1/13357

Abstract: PROBLEM TO BE SOLVED: To realize a back light system of a thin type for surface emitting of white light without luminance unevenness while using inexpensive light emitting diodes as light sources.
SOLUTION: The back light system 140 is realized by providing the back light system with the optical filter 10 which is composed of dielectric multilayered films alternately laminated with a plurality of low-refractive index layers, and high-refractive index layers having the refractive index higher than that of the low-refractive index layers and has the transmittance according to incident angles respectively with the incident red light of the prescribed wavelength band, the green light of the prescribed wavelength band and the blue light of the prescribed wavelength band.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：在使用廉价的发光二极管作为光源的同时，实现用于表面发射白光而没有亮度不均匀的薄型背光系统。 解决方案：背光系统140通过为背光系统提供由多个低折射率层交替层叠的电介质多层膜组成的滤光器10和具有多个低折射率层的高折射率层 折射率高于低折射率层的折射率，并且根据入射角分别具有指定波长带的入射红光，规定波长带的绿光和规定波长带的蓝色光的透射率。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2001313254A

公开(公告)日：2001-11-09

申请号：JP2001113914

申请日：2001-04-12

Applicant: SONY CORP

Inventor： YANASHIMA KATSUNORI ,  IKEDA MASAO ,  TOMIOKA SATOSHI

IPC: H01L21/205

Abstract: PROBLEM TO BE SOLVED: To provide a method for growing a nitride based III-V compound semiconductor layer which can produce a nitride based III-V compound semiconductor substrate having good crystallinity and no surface roughness nor crack with high productivity. SOLUTION: A thin GaN layer 2 is grown rate of 4 μm/h or less on a c-face sapphire substrate 1 by MOCVD or MBE, and then a sufficiently thick GaN layer 3 is grown on the GaN layer 2 at a rate higher than 4 μm/h but not higher than 200 μm/h by hydride VPE. Subsequently, the c-face sapphire substrate 1 is removed by etching or lapping to obtain a GaN substrate comprising the GaN layers 2, 3. Finally, the surface of the GaN layer 2 or 3 being used as a growth surface is etched or polished to bring about a high quality surface state.