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公开(公告)号：JPS61265810A
公开(公告)日：1986-11-25
申请号：JP10801285
申请日：1985-05-20
Applicant: SONY CORP
Inventor： KANEKO MASAHIKO , OKAMOTO TSUTOMU , TAMADA HITOSHI , YAMADA TOSHIRO
Abstract: PURPOSE:To obtain high light transmittance with respect to the wavelength band of 0.8mum, by providing a composition, which does not include Fe , in bismuth substituted yttrium magnetic garnet. CONSTITUTION:On a garnet substrate, whose light absorption is small, the magnetic garnet having the following specified composition is formed by liquid phase epitaxial growing from a solution comprising only Bi2O3 and garnet constituting element: Y3-x-delta1 Bix Mdelta1I Fe5-y-delta2-delta3 Mdelta2II MyIII Ptdelta3 O12-delta4 (MI is one or more kinds of any of Ca , Sr and Ba ; MII is one or more kinds of any of Be and Mg ; and MIII is one or more kinds of any of Ga and Al .) The garnet has high transmittance in the wavelength band of 0.8mum. The garnet is suitable as a Faraday rotary element in a light isolator for preventing returning light when a semiconductor laser using the 0.8mum wave length band is used as a light source for a recording and reproducing device of optical disks and optical and magnetic disks.
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公开(公告)号：JPS6279608A
公开(公告)日：1987-04-13
申请号：JP21972485
申请日：1985-10-02
Applicant: SONY CORP
Inventor： KANEKO MASAHIKO , TAMADA HITOSHI , OKAMOTO TSUTOMU , YAMADA TOSHIRO
Abstract: PURPOSE:To reduce absorption of light on a 0.8mum band, by adding two-valence metal ions when ferri-magnetic garnet containing Lu and Bi is made to grow with flux of Bi2O3 simple substance by liquid-phase epitaxial growth method (LPE method). CONSTITUTION:Magnetic garnet, whose composition is expressed by a general formula (LuBi)3(FeM)5O12, where M is one kind or more of Al or Ga, is formed by liquid-phase epitaxial growth of both elements forming the above composition and molten liquid comprising Bi2O3. In this manufacture, IIA group element ions are added into the melt with the amount of nearly showing the minimum value of light absorption on a 0.8mum wavelength band. Thus, Bi-substituted magnetic garnet, whose light absorption is small on the 0.8mum wavelength band, can be obtained. Therefore, when this is used, for example, as a Faraday rotary element of a light isolator to employ semiconductor laser on the 0.8mum wavelength band, this interrupts returning-light to make the semiconductor laser stably operated. And, a high transmission factor relating to light in the forward direction, that is, low light loss can be realized.
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公开(公告)号：JPS6211302A
公开(公告)日：1987-01-20
申请号：JP15043085
申请日：1985-07-09
Applicant: SONY CORP
Inventor： MURAKAMI YOSHIKAZU , TANAKA HIDEO , MIYAKE MASAMI , ITO SEIGO , TAMADA HITOSHI , YAMADA TOSHIRO
Abstract: PURPOSE:To compensate the temperature characteristic in an excellent way with simple constitution without increasing power consumption by using a magnetic circuit comprising a permanent magnet and a magnetic adjusting plate made of soft ferrite whose magnetic characteristic is respectively specific so as to apply a DC bias magnetic field. CONSTITUTION:The magnetic circuit is formed by combining a permanent magnet whose remanence or average remanence at room temperature is a value or over expressed in equation I and whose linear temperature coefficient of the remanence or average remanence is a value or over expressed in equation II and the soft ferrite magnetic adjusting plate whose saturated magnetization or average saturated magnetization at room temperature is a value or over expressed in equation III and whose linear temperature coefficient at room temperature of them is a value or below expressed in equation IV. In applying a bias magnetic field to a microwave element utilizing the ferrimagnetic resonance in the magnetic circuit, a conditional equation is established, where the resonance frequency is a frequency f0 independently of temperature. Thus, excellent temperature compensation is applied without supplying external energy and increasing power consumption with simple constitution. In the equations above, f0 is operating frequency, gamma is gyromagnetic ratio, NZY is anti-magnetism coefficient of YIG, and 4piMSOY, alpha1Y is first-order temperature coefficient of saturated magnetization of YIG.
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公开(公告)号：JPS61265809A
公开(公告)日：1986-11-25
申请号：JP10801185
申请日：1985-05-20
Applicant: SONY CORP
Inventor： KANEKO MASAHIKO , OKAMOTO TSUTOMU , TAMADA HITOSHI , YAMADA TOSHIRO
Abstract: PURPOSE:To avoid the decrease in light transmittance with respect to the wavelength band of 0.8mum, by providing a composition, which does not include Fe , in bismuth-substituted yttrium magnetic garnet. CONSTITUTION:On a garnet sustrate, whose light absorption is small, the magnetic garnet having the following specified composition is formed by liquid phase epitaxial growing from a solution comprising only Bi2O3 and garnet constituting element: Tm3-x-delta1BixMdelta1IFe5-y-delta2-delta3 Mdelta2IIMIIIy Ptdelta3 O12-delta4 (MI is one or more kinds of any of Ca , Sr and Ba ; MII is one or more kinds of any of Be and Mg ; and MIII is one or more kinds of any of Ga and Al.) The garnet has high transmittance in the wavelength band of 0.8mum. The garnet is suitable as a Faraday rotary element in a light isolator for preventing returning light when a semiconductor laser using the 0.8mum wavelength band is used as a light source for a recording and reproducing device of optical disks and optical and magnetic disks.
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公开(公告)号：JPS61150303A
公开(公告)日：1986-07-09
申请号：JP27557484
申请日：1984-12-25
Applicant: SONY CORP
Inventor： KANEKO MASAHIKO , OKAMOTO TSUTOMU , TAMADA HITOSHI , YAMADA TOSHIRO
Abstract: PURPOSE:To obtain Bi substituted garnet whose optical absorption at a wave length band of 0.8mum is sufficiently small, by growing the garnet of prescribed composition containing a definite amount of Bi on the garnet substrate by epitaxial growth. CONSTITUTION:On the GGG substrate, R3-x-2deltaBixMI2deltaFe5-yMIIyO12--delta are grown by liquid phase epitaxy, wherein R represents one or more kinds of rare earth element, MI is one or more kinds of IIA group element, and MII is one or more kinds of trivalent Ga and Al. The values of (x) and (y) are selected within + or -15% of the center value to make the optical absorption at a wave length band of 0.8mum minimum, wherein 0.5 is prevented by growing Bi-substituted magnetic garnet in which Fe does not exist. The backward ray of the semiconductor laser at a wave length band of 0.8mum can be blocked by applying this magnetic material to the Faraday rotation element of a photo-isolator.
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Patent Agency Ranking
公开(公告)号：JP2010028856A
公开(公告)日：2010-02-04
申请号：JP2009250850
申请日：2009-10-30
Inventor： YONEDA MASATO , YAMADA TOSHIRO
Abstract: PROBLEM TO BE SOLVED: To provide an imaging apparatus and imaging method capable of reducing costs of the imaging apparatus by reducing storage capacity of a memory by reading images within an imaging range corresponding to a zoom magnification from a solid-state imaging device during digital zooming.
SOLUTION: During digital zooming, a digital zoom setting section 22 sets a vertical imaging range of a CMOS image sensor 13 in accordance with a zoom magnification, and the CMOS image sensor 13 performs imaging within the set imaging range. When the zoom magnification is changed, a maximum exposure time of the CMOS image sensor 13 is arithmetically operated on the basis of zoom magnifications before and after the change in such a manner that a shutter signal after the change does not interfere with a read signal before the change, and an exposure time of the CMOS image sensor 13 is set so as not to exceed the arithmetically operated maximum exposure time.
COPYRIGHT: (C)2010,JPO&INPITAbstract translation: 要解决的问题：提供一种成像装置和成像方法，其能够通过在与固态成像装置的变焦倍率相对应的成像范围内读取图像来降低存储器的存储容量来降低成像装置的成本 数码变焦期间。 解决方案：在数字变焦期间，数字变焦设定部分22根据变焦倍率设置CMOS图像传感器13的垂直成像范围，并且CMOS图像传感器13在设定的成像范围内执行成像。 当变焦倍率改变时，CMOS图像传感器13的最大曝光时间是基于变化之前和之后的变焦倍率进行算术运算的，使得改变之后的快门信号不会与之前的读取信号相干扰 CMOS图像传感器13的变化和曝光时间被设定为不超过算术运算的最大曝光时间。 版权所有（C）2010，JPO＆INPIT
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27.发明专利Physical information acquisition method, physical information acquisition device, and driver 有权物理信息获取方法，物理信息获取设备和驱动程序
公开(公告)号：JP2007194981A
公开(公告)日：2007-08-02
申请号：JP2006011912
申请日：2006-01-20
Inventor： YONEDA MASATO , YAMADA TOSHIRO
Abstract: PROBLEM TO BE SOLVED: To implement an electronic shutter function by a simple circuit configuration in an imaging apparatus. SOLUTION: A read address R and drive controls for respective unit pixels of a shutter address S for setting a charge storage time in the read address are set in time division, and corresponding unit pixels are driven at prescribed timing. Respective addresses are designated using a common circuit to be able to drive unit pixels. Since a plurality of pieces of address information can be set using the common circuit without enlarging a circuit scale, the electronic shutter function can be implemented by the simple circuit configuration. Since a layout area can be reduced in comparison with a conventional system requiring the preparation of individual circuits for setting respective addresses, this method contributes to reduction in chip area and cost. COPYRIGHT: (C)2007,JPO&INPIT
Abstract translation: 要解决的问题：通过成像设备中的简单电路配置来实现电子快门功能。
解决方案：分时设置用于设置读取地址中的电荷存储时间的快门地址S的各个单位像素的读取地址R和驱动控制，并以规定的时刻驱动相应的单位像素。 使用公共电路指定相应的地址以能够驱动单位像素。 由于可以使用公共电路设置多个地址信息而不扩大电路规模，所以可以通过简单的电路配置来实现电子快门功能。 由于与需要准备用于设定各个地址的各个电路的常规系统相比，可以减小布局面积，所以该方法有助于降低芯片面积和成本。 版权所有（C）2007，JPO＆INPIT
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28.发明专利Method and device for transmitting reference signal for ad conversion, method and device of ad conversion, and method and device for acquiring physical information 审中-公开用于发送用于AD转换的参考信号的方法和装置，用于AD转换的方法和装置，以及用于获取物理信息的方法和装置
公开(公告)号：JP2006109117A
公开(公告)日：2006-04-20
申请号：JP2004293290
申请日：2004-10-06
Inventor： YAMADA TOSHIRO
IPC: H03M1/56 , H03M1/36 , H04N5/335 , H04N5/361 , H04N5/365 , H04N5/369 , H04N5/374 , H04N5/376 , H04N5/378 , H04N9/07
Abstract: PROBLEM TO BE SOLVED: To transmit a reference signal to all comparators exactly and at high speed when the reference signal is compared with a signal for processing and AD conversion is performed by counting time required for comparison processing by a counter. SOLUTION: A differential amplifier is used as a buffer amplifier 240 and the buffer amplifier 240 is arranged at the input side of a voltage comparison part 214. The reference signal is transmitted from a reference signal generation part 27 to the buffer amplifier 240 by differential signals RAMP+, - and a reference signal RAMPs of a single mode is generated by the buffer amplifier 240. After that, the reference signal RAMPs of the single mode is transmitted from the buffer amplifier 240 to the voltage comparison part 214. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：当参考信号与处理信号进行比较时，将参考信号精确地和高速地传输到所有比较器，并且通过对由计数器进行比较处理所需的时间进行计数来进行AD转换。 解决方案：差分放大器用作缓冲放大器240，缓冲放大器240布置在电压比较部分214的输入侧。参考信号从参考信号产生部分27发送到缓冲放大器240 通过差分信号RAMP +， - 和单个模式的参考信号RAMP由缓冲放大器240产生。之后，单模的参考信号RAMP从缓冲放大器240发送到电压比较部分214.
版权所有（C）2006，JPO＆NCIPI
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公开(公告)号：JPS609326B2
公开(公告)日：1985-03-09
申请号：JP4307575
申请日：1975-04-09
Applicant: SONY CORP
Inventor： TANAKA RIICHI , SHIMIZU MASAHIKO , ITO TAKEO , NAGAI TOORU , YAMADA TOSHIRO
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公开(公告)号：JPS6295812A
公开(公告)日：1987-05-02
申请号：JP23656885
申请日：1985-10-23
Applicant: SONY CORP
Inventor： TAMADA HITOSHI , KANEKO MASAHIKO , OKAMOTO TSUTOMU , YAMADA TOSHIRO
Abstract: PURPOSE:To contrive reduction in light absorption by a method wherein a bismuth garnet film is cooled slowly from the temperature of 600 deg.C or above. CONSTITUTION:A bismuth containing magnetic garnet film is formed using a vapor-phase epitaxial growth method. When said magnetic garnet film is being formed, the garnet film is slowly cooled from the heated state of at least 600 deg.C or above, or by heating it to the above-mentioned temperature, at the cooling speed slower than 500 deg.C per hour. As a result, Fe is reduced by oxidation when he magnetic garnet is N-type, and when the film is P-type Fe decreases by reduction. In other words, the Fe or the Fe which contribute light absorption are reduced. Consequently, the reduction in light absorption can be achieved.
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