-
公开(公告)号:ES2156269T3
公开(公告)日:2001-06-16
申请号:ES96830472
申请日:1996-09-17
Applicant: ST MICROELECTRONICS SRL , MAGNETI MARELLI SPA
Inventor: CRESPI ANGELO , CHICCA STEFANIA , MASTELLA PAOLO , POLETTO VANNI
Abstract: A circuit for diagnosing the state of a load (LD) comprises a DMOS transistor (DMOS1) interposed between a terminal (OUT) of the load (LD) and voltage comparator circuits (CDT) in order to limit the maximum voltage input to the comparators (CDT) to reduce the circuit area occupied by the comparators (CDT) and consequently the cost of the diagnosis circuit.
-
公开(公告)号:DE69612282D1
公开(公告)日:2001-05-03
申请号:DE69612282
申请日:1996-09-17
Applicant: ST MICROELECTRONICS SRL , MAGNETI MARELLI SPA
Inventor: POLETTO VANNI , POMA ALBERTO , MORELLI MARCO
IPC: G01F23/00 , H03K17/945
Abstract: A circuit for controlling the reserve lamp (LAMP) of a vehicle's fuel level indicator instrument (STR). The circuit uses a switch (SW1) controlled by an extremely asymmetric clock signal (CLK) periodically to switch, for a very short time, the signal (Rj) provided by the level sensor (SENS) towards a comparator (CMP) operable to compare this signal (Rj) with a threshold value (Rth) for the purpose of determining the state of the reserve lamp (LAMP).
-
公开(公告)号:FR3078415B1
公开(公告)日:2021-09-17
申请号:FR1851699
申请日:2018-02-27
Inventor: POLETTO VANNI , SWANSON DAVID F , TORRISI GIOVANNI LUCA , CHEVALIER LAURENT
Abstract: L'invention concerne un circuit de commande de transistors (44, 46) en parallèle comprenant au moins deux étages (42, 43) destinés chacun à fournir un signal de commande à un des transistors, dans lequel un courant de sortie de chaque étage est régulé selon la différence entre la somme de valeurs représentatives des courants de sortie mesurés de chaque étage et la somme de valeurs des consignes affectées à tous les étages.
-
公开(公告)号:DE102017113530A1
公开(公告)日:2018-05-30
申请号:DE102017113530
申请日:2017-06-20
Applicant: ST MICROELECTRONICS SRL
Inventor: POLETTO VANNI , PROVINZANO BIAGIO
IPC: H03F3/45
Abstract: Eine (Vor-)Treiberschaltung (100) für z. B. Elektromotoren beinhaltet:einen ersten (Gxy) und einen zweiten (Sxy) Ausgangsanschluss, die mit einem Leistungstransistor (T) koppelbar sind,eine Differenzstufe (10), die einen nicht invertierenden (+) und einen invertierenden (-) Eingang aufweist, zum Aufnehmen einer Eingangsspannung (Vin), wobei die Eingangsspannung (Vin) als eine Ausgangsspannung (Vgs) über dem ersten (Gxy) und dem zweiten (Sxy) Ausgangsanschluss als ein Treibersignal für den Leistungstransistor repliziert wird.Die Differenzstufe (10) umfasst einen Differenz-Transkonduktanz-Verstärker in einer Spannungsfolgeranordnung, die kontinuierliche Regelung der Spannung an dem ersten Ausgangsanschluss (Gxy) relativ zu dem zweiten Ausgangsanschluss (Sxy) vorsieht.
-
公开(公告)号:DE60102213D1
公开(公告)日:2004-04-08
申请号:DE60102213
申请日:2001-12-27
Applicant: ST MICROELECTRONICS SRL
Inventor: POLETTO VANNI
IPC: G05B11/42
Abstract: The present invention relates to a digital control circuit of the P.I. (Proportional Integral) type, receiving an error signal (Error) at an input terminal (IN1) and adapted to provide, at an output terminal (OUT1), a PWM [Pulse Width Modulated] output signal (PWM Output). The circuit is of a type comprising at least one analog-to-digital converter (100, 100*) connected to the input terminal (IN) and to the output terminal (OUT1) through at least one integrative/proportional branch (120, 121, 130, 134). Advantageously in this invention, the analog-to-digital converter (100, 100*) is an integration converter adapted to integrate the error signal (Error) before an analog-to-digital conversion thereof.
-
公开(公告)号:ES2194091T3
公开(公告)日:2003-11-16
申请号:ES96830610
申请日:1996-12-05
Applicant: ST MICROELECTRONICS SRL , MAGNETI MARELLI POWERTRAIN SPA
Inventor: MILANESI ANDREA , POLETTO VANNI , POMA ALBERTO , MORELLI MARCO
IPC: G05F1/575
Abstract: A voltage-regulator circuit with a low voltage drop using a DMOS power transistor (PT) driven by a charge pump (CP) comprises two feedback loops: a first feedback loop having high gain and accuracy but low response speed, and a second feedback loop having a wide passband and fast response speed but low gain.
-
公开(公告)号:DE69626991D1
公开(公告)日:2003-04-30
申请号:DE69626991
申请日:1996-12-05
Applicant: ST MICROELECTRONICS SRL , MAGNETI MARELLI POWERTRAIN SPA
Inventor: MILANESI ANDREA , POLETTO VANNI , POMA ALBERTO , MORELLI MARCO
IPC: G05F1/575
Abstract: A voltage-regulator circuit with a low voltage drop using a DMOS power transistor (PT) driven by a charge pump (CP) comprises two feedback loops: a first feedback loop having high gain and accuracy but low response speed, and a second feedback loop having a wide passband and fast response speed but low gain.
-
公开(公告)号:DE69611826T2
公开(公告)日:2001-06-07
申请号:DE69611826
申请日:1996-09-17
Applicant: ST MICROELECTRONICS SRL , MAGNETI MARELLI SPA
Inventor: CRESPI ANGELO , CHICCA STEFANIA , MASTELLA PAOLO , POLETTO VANNI
Abstract: A circuit for diagnosing the state of a load (LD) comprises a DMOS transistor (DMOS1) interposed between a terminal (OUT) of the load (LD) and voltage comparator circuits (CDT) in order to limit the maximum voltage input to the comparators (CDT) to reduce the circuit area occupied by the comparators (CDT) and consequently the cost of the diagnosis circuit.
-
公开(公告)号:DE69611826D1
公开(公告)日:2001-03-29
申请号:DE69611826
申请日:1996-09-17
Applicant: ST MICROELECTRONICS SRL , MAGNETI MARELLI SPA
Inventor: CRESPI ANGELO , CHICCA STEFANIA , MASTELLA PAOLO , POLETTO VANNI
Abstract: A circuit for diagnosing the state of a load (LD) comprises a DMOS transistor (DMOS1) interposed between a terminal (OUT) of the load (LD) and voltage comparator circuits (CDT) in order to limit the maximum voltage input to the comparators (CDT) to reduce the circuit area occupied by the comparators (CDT) and consequently the cost of the diagnosis circuit.
-
公开(公告)号:DE69227244T2
公开(公告)日:1999-03-04
申请号:DE69227244
申请日:1992-07-28
Applicant: ST MICROELECTRONICS SRL
Inventor: POLETTO VANNI , MORELLI MARCO
IPC: H01L29/73 , G05F1/569 , H01L21/331 , H03K17/0422 , G05F1/56 , H03K17/04
Abstract: Saturation of a bipolar power transistor is controlled by sensing the current which is eventually injected into the substrate of the integrated circuit by the saturating transistor and using this signal for exerting a limiting action on the current which is driven to the base of the power transistor by a dedicated driving circuit. Differently from the prior art antisaturation systems, it is no longer necessary to precisely monitor the operating voltages across the terminals of the bipolar power transistor. A suitable sensing resistance may be integrated conveniently at a distance from the often complex integrated structure of the bipolar transistor. The system of the invention offers numerous advantages and ensures intervention of the antisaturation circuit only when the power transistor has positively reached a state of saturation, but well before any unwanted consequence.
-
-
-
-
-
-
-
-
-