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公开(公告)号：JP2017115146A
公开(公告)日：2017-06-29
申请号：JP2016247178
申请日：2016-12-20
Applicant: 住友化学株式会社 , Sumitomo Chemical Co Ltd
Inventor： HOTTA SHOHEI , TAKASHIMA MASAYUKI
Abstract: 【課題】硬化物のUV安定性が高いシリコーン樹脂組成物、硬化物、半導体発光素子用封止材の提供。【解決手段】少なくとも1つのシリコーン樹脂を含むシリコーン樹脂組成物であって、下記(i)〜(iii)の要件を満たす、シリコーン樹脂組成物。(i)含有するケイ素原子が、A1ケイ素原子及びA2ケイ素原子からなる群から選ばれる少なくとも1種のケイ素原子と、A3ケイ素原子とから実質的になり、A1ケイ素原子、A2ケイ素原子及びA3ケイ素原子の合計含有量に対する、A3ケイ素原子の含有量の割合が50モル%以上99モル%以下である。(ii)前記ケイ素原子に結合する側鎖が、炭素数1〜3のアルキル基、炭素数1若しくは2のアルコキシ基、又は水酸基であり、アルコキシ基のモル比が、アルキル基100に対して5未満であり、水酸基のモル比が、アルキル基100に対して10以上である。(iii)金属触媒を実質的に含有しない。【選択図】なし
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公开(公告)号：JP2017115144A
公开(公告)日：2017-06-29
申请号：JP2016247087
申请日：2016-12-20
Applicant: 住友化学株式会社 , Sumitomo Chemical Co Ltd
Inventor： HOTTA SHOHEI , TAKASHIMA MASAYUKI
Abstract: 【課題】高い熱衝撃耐性を有するシリコーン系樹脂硬化物となるシリコーン樹脂組成物を提供する。【解決手段】含有するケイ素原子が、A1及び/又はA2ケイ素原子と、A3ケイ素原子とから実質的になり、A1、A2及びA3ケイ素原子の合計含有量に対する、A3ケイ素原子の含有量の割合が、30モル%以上60モル%未満であり、且つ、重量平均分子量が1500以上であるシリコーン樹脂を含み、含有するケイ素原子が、A1及び/又はA2ケイ素原子と、A3ケイ素原子とから実質的になり、A1、A2及びA3ケイ素原子の合計含有量に対する、A3ケイ素原子の含有量の割合が、50モル%以上99モル%以下であり、前記ケイ素原子に結合する側鎖が、炭素数1〜3のアルキル基と、炭素数1又は2のアルコキシ基又とを含み、アルコキシ基のモル比が、アルキル基100に対して5以上である、シリコーン樹脂組成物。【選択図】なし
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公开(公告)号：JP2010256016A
公开(公告)日：2010-11-11
申请号：JP2009102765
申请日：2009-04-21
Applicant: Sumitomo Chemical Co Ltd , 住友化学株式会社
Inventor： FUNASE JUNJI , TAKASHIMA MASAYUKI
Abstract: PROBLEM TO BE SOLVED: To provide a method of measuring the molecular weight of resin which easily and sufficiently satisfies the reliability of a measuring result in a short time.
SOLUTION: The method for measuring the molecular weight X
m to be calculated of resin X unknown in its molecular weight by a gel permeation chromatography method includes molecular weights in the following (A), (B) and (C) the step of continuously measuring the molecular weights of the resin X unknown in its molecular weight (A), one kind or two or above kinds of standard non-polystyrene resins A
1 , A
2 , ... A
n (molecular weights: A
m1 , A
m2 , ... A
mn ) known in their molecular weights (B) and three or more kinds of standard polystyrene resins of which the molecular weights are known but different from each other (C) using the gel permeation chromatography method, the step of calculating the polystyrene conversion molecular weight A
g of the standard non-polystyrene resin A and the polystyrene conversion molecular weight X
g of the resin X from the calibration curve based on the measured molecular weight of the standard polystyrene resin, the step of calculating the correlation formula based on the relation between the value of the polystyrene conversion molecular weight A
g of the standard non-polystyrene resin A and the value of the known molecular weight A
m of the standard non-polystyrene resin A and the step of determining the molecular weight X
m to be calculated of the resin X from X
g and the correlation formula.
COPYRIGHT: (C)2011,JPO&INPITAbstract translation: 要解决的问题：提供一种在短时间内容易且充分地满足测量结果的可靠性的方法来测量树脂的分子量。 解决方案：通过凝胶渗透色谱法测定其分子量未知的树脂X的分子量X
m 的方法包括以下（A），（B ）和（C）连续测定其分子量（A）中未知的树脂X的分子量的步骤，一种或两种以上种类的标准非聚苯乙烯树脂A 1 2 ，分子量：A m1 ，A m2 ，... A < 已知它们的分子量（B）的三种或更多种已知的分子量已知但彼此不同的标准聚苯乙烯树脂（C），使用凝胶渗透色谱法，步骤 基于测量的标准曲线计算树脂X的标准非聚苯乙烯树脂A的聚苯乙烯换算分子量A SB SB，g / SB> 分子量的标准 标准聚苯乙烯树脂，基于标准非聚苯乙烯树脂A的聚苯乙烯换算分子量A g 的值与已知分子量A的值之间的关系计算相关公式的步骤 标准非聚苯乙烯树脂A的 m 和从X SB计算树脂X的分子量X m 的步骤 和相关公式。 版权所有（C）2011，JPO＆INPIT -
公开(公告)号：JP2008176098A
公开(公告)日：2008-07-31
申请号：JP2007009978
申请日：2007-01-19
Applicant: Dongwoo Fine-Chem Co Ltd , Sumitomo Chemical Co Ltd , 住友化学株式会社 , 東友ファインケム株式会社Dongwoo Fine−Chem Co.,Ltd.
Inventor： YAHAGI AKIRA , TAKASHIMA MASAYUKI
IPC: G03F7/32
Abstract: PROBLEM TO BE SOLVED: To provide a developing solution superior in low corrosion property and developing property on a conductive material and to provide a lithography process that uses the developing solution.
SOLUTION: The developing solution contains the following components (A) to (D). They are (A) an alkaline compound; (B) an organic acid salt or an inorganic salt, having no alkaline metal atom in the molecule; (C) an oxycarboxylic acid-based chelating agent or an aminocarboxylic acid-based chelating agent, having at least one ion selected from a group consisting of sodium ion, potassium ion and ammonium ion bonded by either an ionic bond or a coordinate bond; and (D) water.
COPYRIGHT: (C)2008,JPO&INPITAbstract translation: 要解决的问题：提供在导电材料上的低腐蚀性和显影性优异的显影溶液，并提供使用显影液的光刻方法。 解决方案：显影液含有以下组分（A）至（D）。 它们是（A）碱性化合物; （B）分子中不含碱金属原子的有机酸盐或无机盐; （C）基于羟基羧酸的螯合剂或氨基羧酸类螯合剂，其具有通过离子键或配位键键合的钠离子，钾离子和铵离子中的至少一种离子; 和（D）水。 版权所有（C）2008，JPO＆INPIT
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公开(公告)号：JP2006041446A
公开(公告)日：2006-02-09
申请号：JP2004223444
申请日：2004-07-30
Applicant: Sumitomo Chemical Co Ltd , 住友化学株式会社
Inventor： TAKASHIMA MASAYUKI
IPC: H01L21/304 , C11D7/08 , C11D7/10 , C11D7/26 , C11D7/34 , C11D7/60 , C11D17/08 , C23G5/024 , C23G5/028 , C23G5/032
Abstract: PROBLEM TO BE SOLVED: To provide a novel post-cleaning liquid for removing an additive attaching to the surface of an electronic component without oxidizing its surface, after cleaning the electronic component with an additive-containing cleaning liquid for realizing a superior surface with reduced contamination with the additive, and to provide a cleaning method that uses the cleaning liquid. SOLUTION: The post-cleaning liquid for the electronic component contains a water-soluble alcohol-based solvent and/or a water-soluble sulfur-oxide containing solvent, a fluorine compound and water. The method of cleaning the electronic component that uses the cleaning liquid is also provided. COPYRIGHT: (C)2006,JPO&NCIPI
Abstract translation: 要解决的问题：为了提供一种新颖的后清洗液，用于除去附着在电子部件的表面上的添加剂而不氧化其表面，在用用于实现上表面的含添加剂的清洗液清洁电子部件之后 与添加剂的污染减少，并提供使用清洁液体的清洁方法。 解决方案：电子部件用后清液含有水溶性醇系溶剂和/或水溶性硫氧化物溶剂，氟化合物和水。 还提供了清洁使用清洁液体的电子部件的方法。 版权所有（C）2006，JPO＆NCIPI
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Patent Agency Ranking
公开(公告)号：JP2003114540A
公开(公告)日：2003-04-18
申请号：JP2002213802
申请日：2002-07-23
Applicant: NEC CORP , SUMITOMO CHEMICAL CO
Inventor： KOITO TATSUYA , HIRANO KEIJI , TOKIOKA KENICHI , AOKI HIDEMITSU , TAKASHIMA MASAYUKI
Abstract: PROBLEM TO BE SOLVED: To provide a release agent composition excellent in power to remove residue produced by via hole formation by etching a interlayer dielectric film on a metallic film using a resist above a highly integrated substrate as a mask, subsequent ashing of the remaining resist, etc., excellent also in property of preventing corrosion of the metallic film and reducing damage to the quality of the interlayer dielectric film, particularly a low dielectric constant film to a practical level. SOLUTION: The release agent composition comprises at least one of alcohols having an intramolecular ether bond as a component (a) and an anticorrosive as a component (b), wherein furfuryl alcohol or tetrahydrofurfuryl alcohol is preferably used as the component (a).
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公开(公告)号：JP2001319913A
公开(公告)日：2001-11-16
申请号：JP2001036858
申请日：2001-02-14
Applicant: NEC CORP , SUMITOMO CHEMICAL CO
Inventor： AOKI HIDEMITSU , TOMIMORI HIROAKI , TAKASHIMA MASAYUKI
IPC: H01L21/3205 , H01L21/304 , H01L23/52
Abstract: PROBLEM TO BE SOLVED: To provide an anti-corrosion undiluted treatment liquid which is used for washing or maintaining a metal surface where copper, copper alloy, or the like is exposed, or for forming a protective film on such a metal surface, or for other purposes, and which never allows an anticorrosive contained in the liquid to be deposited in temperature environments for transportation, maintenance, treatment, or the like. SOLUTION: The anti-corrosion undiluted treatment liquid can be used as an aqueous solution with respect to the metal surface where copper or copper alloy is exposed, This treatment liquid contains the anticorrosive and a deposition preventive. The anticorrosive is a triazole-based compound and/or its derivative-based compound with a density between 0.05 and 20 wt.%, and the deposition preventive is a water soluble alkali compound containing no metal atoms in the molecule, The pH of an aqueous solution of the undiluted treatment liquid is between 4 and 12.
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公开(公告)号：JP2001288496A
公开(公告)日：2001-10-16
申请号：JP2000332642
申请日：2000-10-31
Applicant: SUMITOMO CHEMICAL CO
Inventor： TAKASHIMA MASAYUKI
Abstract: PROBLEM TO BE SOLVED: To provide a cleaning fluid used to efficiently remove adhering fine dust and organic matter from the surface of an electronic component while preventing silicon and metals other than silicon from being attacked. SOLUTION: Provided is a cleaning solution for an electronic component, containing a hydroxide, water, a metal corrosion inhibitor, and compounds represented by the formulae: HO-((EO)x-(PO)y)z-H (wherein EO is an oxyethylene group; PO is an oxypropylene group; x and y are integers satisfying the relationships: x/(x+y)=0.05-0.4; and z is a positive integer) and/or R-[((EO)x-(PO)y)z-H]m (wherein EO, PO, x, y, and z are as defined above; R is a residue derived by removing a hydroxylic hydrogen group from an alcohol, a residue derived by removing an aminic hydrogen atom from a hydroxy- containing amine, or a residue derived by removing an aminic hydrogen atom from an amine; and m is an integer of 1 or greater).
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公开(公告)号：JPH10275789A
公开(公告)日：1998-10-13
申请号：JP8010197
申请日：1997-03-31
Applicant: SUMITOMO CHEMICAL CO
Inventor： TAKASHIMA MASAYUKI , SARARA KENICHI , SUKUMODA ATSUSHI
IPC: B24B1/00 , B24B37/00 , C09K3/14 , H01L21/304
Abstract: PROBLEM TO BE SOLVED: To perform polishing treatment at a polishing speed required for manufacturing a semiconductor, to improve a product yield and to improve productivity, by allowing an abrasive for chemically and mechanically polishing a coated metal film to contain a metal and a complex that are dissolved in a solution by polishing. SOLUTION: An abrasive complexing agent for polishing a metal film that covers a silicon wafer by chemical and mechanical polishing is contained. Particles of organic macromolecular compounds such as methacrylic resin and phenol resin are used in addition to particles of inorganic oxide such as silica and alumina as the abrasive. For example, Al and Al alloy are used as a material with a metal as a main constituent and also ammonium fluoride is used as a complexing agent that reacts with a metal with Al as a main constituent and forms a complex with a higher solubility. Resin emulsion with an extremely improved dispersion property in water and cannot be flocculated or precipitated even after a long storage is used as a polishing particle.
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30.发明专利
公开(公告)号：JPH10275788A
公开(公告)日：1998-10-13
申请号：JP8009797
申请日：1997-03-31
Applicant: SUMITOMO CHEMICAL CO
Inventor： TAKASHIMA MASAYUKI , SARARA KENICHI , SUKUMODA ATSUSHI
IPC: B24B37/00 , H01L21/304
Abstract: PROBLEM TO BE SOLVED: To provide a method and equipment for manufacturing a semiconductor device for downsizing the equipment by integrating the polishing process with the particle removal processes without damaging a surface to be polished in polishing and causing the center part to be recessed and without reducing the reliability in a semiconductor and a manufacturing yield due to the retention of polishing particles since adhered particles can be easily remored after polishing is completed. SOLUTION: When an Al alloy film, an Si film, an Si oxide film, and a nitride film are polished (CMP), a particle consisting of an organic macromolecular compound or a particle with carbon as a main constituent is used as a polishing particle. A resin that can polish a surface to be polished and can be ashed and decomposed by active rays containing ultraviolet rays may preferably be used but a methacrylic resin and polystyrene resin have spherical particles and have improved dispersion property and can be stored for a long term so that they are especially effective. After polishing using the above resin particle, active rays containing a main wavelength of 254 nm from a low-pressure mercury lamp are applied to a film to be polished and an optimum time is determined from light source output and a distance to a substrate. The rays are preferably applied in air at 50-200 deg.C. The removal of particles by decomposition under the presence of ozone proceeds.
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