公开(公告)号：US20230343846A1

公开(公告)日：2023-10-26

申请号：US18151775

申请日：2023-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Eunkyu LEE ,  Changseok LEE ,  Changhyun KIM ,  Kyung-Eun BYUN

IPC: H01L29/45

CPC classification number: H01L29/45

Abstract: A semiconductor device may include a first semiconductor layer including a first semiconductor material; a metal layer facing the first semiconductor layer and having conductivity; a 2D material layer between the first semiconductor layer and the metal layer; and a second semiconductor layer between the first semiconductor layer and the 2D material layer. The second semiconductor layer may include a second semiconductor material different from the first semiconductor material. The second semiconductor layer and the 2D material layer may be in direct contact with each other. The second semiconductor material may include germanium.

公开(公告)号：US20230207312A1

公开(公告)日：2023-06-29

申请号：US18179565

申请日：2023-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunkyu LEE ,  Kyung-Eun BYUN ,  Hyunjae SONG ,  Hyeonjin SHIN ,  Changhyun KIM ,  Keunwook SHIN ,  Changseok LEE ,  Alum JUNG

IPC: H01L21/02 ,  H01L29/16 ,  H01L29/165

CPC classification number: H01L21/02447 ,  H01L29/1606 ,  H01L29/1608 ,  H01L29/165 ,  H01L21/02499 ,  H01L21/02527 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/02381

Abstract: Provided are a graphene structure and a method of forming the graphene structure. The graphene structure includes a substrate and graphene on a surface of the substrate. Here, a bonding region in which a material of the substrate and carbon of the graphene are covalently bonded is formed between the surface of the substrate and the graphene.

公开(公告)号：US20200058741A1

公开(公告)日：2020-02-20

申请号：US16662872

申请日：2019-10-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Hyeonjin SHIN ,  Dongwook LEE ,  Seongjun PARK ,  Kiyoung LEE ,  Eunkyu LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/16 ,  H01L29/12 ,  H01L27/15 ,  H01L27/146 ,  H01L27/144 ,  H01L31/0352 ,  H01L51/00 ,  H01L51/05 ,  H01L31/101 ,  H01L31/028 ,  H01L31/09

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US20180145190A1

公开(公告)日：2018-05-24

申请号：US15603796

申请日：2017-05-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kiyoung LEE ,  Jinseong HEO ,  Jaeho LEE ,  Haeryong KIM ,  Seongjun PARK ,  Hyeonjin SHIN ,  Eunkyu LEE ,  Sanghyun JO

IPC: H01L31/0216 ,  H01L31/028 ,  H01L31/0224 ,  H01L31/0352 ,  H01L31/18 ,  G01N21/59

CPC classification number: H01L31/02161 ,  G01N21/59 ,  H01L31/022466 ,  H01L31/028 ,  H01L31/0304 ,  H01L31/035218 ,  H01L31/1804 ,  Y02E10/544 ,  Y02E10/547

Abstract: A broadband multi-purpose optical device includes a semiconductor layer having a light absorption characteristic, a first active layer having a light absorption band different from a light absorption band of the semiconductor layer, a first two-dimensional (2D) material layer adjacent to the first active layer, and a first interfacial layer configured to control a pinning potential of the semiconductor layer and the first active layer. The broadband multi-purpose optical device may further include at least one second active layer, and may include a tandem structure that further includes at least one second 2D material layer. The first active layer and the second active layer may have different light absorption bands. The broadband multi-purpose optical device may further include a second interfacial layer adjacent to the first 2D material layer.

公开(公告)号：US20170338260A1

公开(公告)日：2017-11-23

申请号：US15668997

申请日：2017-08-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Seongjun PARK ,  Kiyoung LEE ,  Sangyeob LEE ,  Eunkyu LEE ,  Jaeho LEE

IPC: H01L27/146 ,  H01L31/0224 ,  H01L29/786 ,  H01L31/10 ,  H01L27/144

CPC classification number: H01L31/1075 ,  H01L27/144 ,  H01L27/14603 ,  H01L29/1606 ,  H01L29/267 ,  H01L29/66015 ,  H01L29/6603 ,  H01L31/02327 ,  H01L31/028 ,  H01L31/032 ,  H01L31/0326 ,  H01L31/0336 ,  H01L31/0392 ,  H01L31/09 ,  H01L31/105 ,  H01L31/109 ,  H01L31/1136 ,  H01L31/18 ,  Y02E10/547

Abstract: A photodetector includes an insulating layer on a substrate, a first graphene layer on the insulating layer, a 2-dimensional (2D) material layer on the first graphene layer, a second graphene layer on the 2D material layer, a first electrode on the first graphene layer, and a second electrode on the second graphene layer. The 2D material layer includes a barrier layer and a light absorption layer. The barrier layer has a larger bandgap than the light absorption layer.

公开(公告)号：US20250142874A1

公开(公告)日：2025-05-01

申请号：US18660936

申请日：2024-05-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changhyun KIM ,  Kyung-Eun BYUN ,  Minsu SEOL ,  Junyoung KWON ,  Huije RYU ,  Eunkyu LEE ,  Yeonchoo CHO

IPC: H01L29/78 ,  H01L27/092 ,  H01L29/10 ,  H01L29/66

Abstract: Provided is a semiconductor device including a substrate, a first vertical channel, a spacer, and a second vertical channel. The first vertical channel may have a sheet shape extending in a direction perpendicular to a surface of the substrate. The spacer may be provided at an end of the first vertical channel in an extension direction. The second vertical channel may be aligned with the first vertical channel on the spacer and have a sheet shape extending in a vertical direction.

公开(公告)号：US20240151522A1

公开(公告)日：2024-05-09

申请号：US18412823

申请日：2024-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eunkyu LEE ,  Yeonchoo CHO ,  Sangwon KIM ,  Kyung-Eun BYUN ,  Hyunjae SONG ,  Hyeonjin SHIN

IPC: G01B15/02 ,  G01N23/2208 ,  G01N23/2273 ,  H01L21/285 ,  H01L21/66 ,  H01L29/45

CPC classification number: G01B15/02 ,  G01N23/2208 ,  G01N23/2273 ,  H01L21/28512 ,  H01L22/12 ,  H01L29/45 ,  G01N2223/085 ,  G01N2223/61

Abstract: A method of calculating a thickness of a graphene layer and a method of measuring a content of silicon carbide, by using X-ray photoelectron spectroscopy (XPS), are provided. The method of calculating the thickness of the graphene layer, which is directly grown on a silicon substrate, includes measuring the thickness of the graphene layer directly grown on the silicon substrate, by using a ratio between a signal intensity of a photoelectron beam emitted from the graphene layer and a signal intensity of a photoelectron beam emitted from the silicon substrate.

公开(公告)号：US20220115432A1

公开(公告)日：2022-04-14

申请号：US17555977

申请日：2021-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jaeho LEE ,  Eunkyu LEE ,  Seongjun PARK ,  Kiyoung LEE ,  Jinseong HEO

IPC: H01L27/146 ,  H01L31/074 ,  H01L31/0264

Abstract: Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.

公开(公告)号：US20220093746A1

公开(公告)日：2022-03-24

申请号：US17541871

申请日：2021-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Hyeonjin SHIN ,  Dongwook LEE ,  Seongjun PARK ,  Kiyoung LEE ,  Eunkyu LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/16 ,  H01L31/0352 ,  H01L31/09 ,  H01L31/028 ,  H01L31/101 ,  H01L51/05 ,  H01L51/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L29/12

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US20210206643A1

公开(公告)日：2021-07-08

申请号：US17138194

申请日：2020-12-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Changseok LEE ,  Changhyun KIM ,  Kyung-Eun BYUN ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Eunkyu LEE

IPC: C01B32/186 ,  C01B32/194 ,  C23C16/02 ,  C23C16/04 ,  C23C16/26 ,  C23C16/513

Abstract: Provided is a method of selectively growing graphene. The method includes forming an ion implantation region and an ion non-implantation region by implanting ions locally into a substrate; and selectively growing graphene in the ion implantation region or the ion non-implantation region.