公开(公告)号：US20230335665A1

公开(公告)日：2023-10-19

申请号：US18338631

申请日：2023-06-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jaeho LEE ,  Haeryong KIM ,  Hyeonjin SHIN

IPC: H01L31/107 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0352 ,  H01S5/0687 ,  G01S7/481 ,  H01L31/028 ,  H01L31/032 ,  H01L27/146 ,  H01L31/101 ,  G01S17/931 ,  H10K39/32

CPC classification number: H01L31/1075 ,  H01L31/02027 ,  H01L31/022466 ,  H01L31/03529 ,  H01S5/0687 ,  G01S7/4816 ,  G01S7/4817 ,  H01L31/028 ,  H01L31/032 ,  H01L27/14643 ,  H01L31/035209 ,  H01L27/14647 ,  H01L31/035281 ,  H01L31/1013 ,  G01S17/931 ,  H10K39/32 ,  G05D2201/0213 ,  H01L31/0304

Abstract: A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

公开(公告)号：US20230207659A1

公开(公告)日：2023-06-29

申请号：US18179598

申请日：2023-03-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Sangwook Kim ,  Yunseong LEE ,  Jinseong HEO

IPC: H01L29/51 ,  H01L27/06

CPC classification number: H01L29/516 ,  H01L27/0629 ,  H01L28/60 ,  H01L29/513

Abstract: A ferroelectric structure includes a first polarization enhancement film on a ferroelectric film, wherein the ferroelectric film has a first net polarization in a first direction oriented from the ferroelectric film toward the first polarization enhancement film. The first polarization enhancement film has a second net polarization in a second direction crossing the first direction.

公开(公告)号：US20220367745A1

公开(公告)日：2022-11-17

申请号：US17857466

申请日：2022-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jaeho LEE ,  Haeryong KIM ,  Hyeonjin SHIN

IPC: H01L31/107 ,  H01L31/02 ,  H01L31/0224 ,  H01L31/0352 ,  H01S5/0687 ,  G01S7/481 ,  H01L31/028 ,  H01L31/032 ,  H01L27/146 ,  H01L31/101 ,  H01L27/30 ,  G01S17/931

Abstract: A photodetector having a small form factor and having high detection efficiency with respect to both visible light and infrared rays may include a first electrode, a collector layer on the first electrode, a tunnel barrier layer on the collector layer, a graphene layer on the tunnel barrier layer, an emitter layer on the graphene layer, and a second electrode on the emitter layer. The photodetector may be included in an image sensor. An image sensor may include a substrate, an insulating layer on the substrate, and a plurality of photodetectors on the insulating layer. The photodetectors may be aligned with each other in a direction extending parallel or perpendicular to a top surface of the insulating layer. The photodetector may be included in a LiDAR system.

公开(公告)号：US20220115432A1

公开(公告)日：2022-04-14

申请号：US17555977

申请日：2021-12-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jaeho LEE ,  Eunkyu LEE ,  Seongjun PARK ,  Kiyoung LEE ,  Jinseong HEO

IPC: H01L27/146 ,  H01L31/074 ,  H01L31/0264

Abstract: Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.

公开(公告)号：US20220093746A1

公开(公告)日：2022-03-24

申请号：US17541871

申请日：2021-12-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Hyeonjin SHIN ,  Dongwook LEE ,  Seongjun PARK ,  Kiyoung LEE ,  Eunkyu LEE ,  Sanghyun JO ,  Jinseong HEO

IPC: H01L29/16 ,  H01L31/0352 ,  H01L31/09 ,  H01L31/028 ,  H01L31/101 ,  H01L51/05 ,  H01L51/00 ,  H01L27/144 ,  H01L27/146 ,  H01L27/15 ,  H01L29/12

Abstract: Provided are an optical sensor including graphene quantum dots and an image sensor including an optical sensing layer. The optical sensor may include a graphene quantum dot layer that includes a plurality of first graphene quantum dots bonded to a first functional group and a plurality of second graphene quantum dots bonded to a second functional group that is different from the first functional group. An absorption wavelength band of the optical sensor may be adjusted based on types of functional groups bonded to the respective graphene quantum dots and/or sizes of the graphene quantum dots.

公开(公告)号：US20210305399A1

公开(公告)日：2021-09-30

申请号：US17208018

申请日：2021-03-22

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Yunseong LEE ,  Taehwan MOON ,  Sanghyun JO

IPC: H01L29/51 ,  H01L21/28

Abstract: An electronic device includes a seed layer including a two-dimensional (2D) material, and a ferroelectric layer on the seed layer. The ferroelectric layer is configured to be aligned in a direction in which a (111) crystal direction is perpendicular to a top surface of a substrate on which the seed layer is located and/or a top surface of the seed layer.

公开(公告)号：US20210167183A1

公开(公告)日：2021-06-03

申请号：US17154354

申请日：2021-01-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Yunseong LEE ,  Sanghyun JO ,  Keunwook SHIN ,  Hyeonjin SHIN

IPC: H01L29/51 ,  H01L21/02

Abstract: Provided are electronic devices and methods of manufacturing the same. An electronic device may include a substrate, a gate electrode on the substrate, a ferroelectric layer between the substrate and the gate electrode, and a carbon layer between the substrate and the ferroelectric layer. The carbon layer may have an sp2 bonding structure.

公开(公告)号：US20210118990A1

公开(公告)日：2021-04-22

申请号：US17072737

申请日：2020-10-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Eunha LEE ,  Jinseong HEO ,  Junghwa KIM ,  Hyangsook LEE ,  Seunggeol NAM

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L23/29

Abstract: An electronic device includes a dielectric layer including crystal grains having aligned crystal orientations the dielectric layer may be between a substrate and a gate electrode. The dielectric layer may be between isolated first and second electrodes. A method of manufacturing an electronic device may include preparing a substrate having a channel layer, forming the dielectric layer on the channel layer, and forming a gate electrode on the dielectric layer.

公开(公告)号：US20210036024A1

公开(公告)日：2021-02-04

申请号：US16943161

申请日：2020-07-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwook KIM ,  Jinseong HEO ,  Yunseong LEE ,  Sanghyun JO

IPC: H01L27/12 ,  G06N3/063 ,  G06N3/08

Abstract: A semiconductor device includes a first transistor including a first channel layer of a first conductivity type, a second transistor provided in parallel with the first transistor and including a second channel layer of a second conductivity type, and a third transistor stacked on the first and second transistors. The third transistor may include a gate insulating film including a ferroelectric material. The third transistor may include third channel layer and a gate electrode that are spaced apart from each other in a thickness direction with the gate insulating film therebetween.

公开(公告)号：US20180130843A1

公开(公告)日：2018-05-10

申请号：US15800229

申请日：2017-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jaeho LEE ,  Eunkyu LEE ,  Seongjun PARK ,  Kiyoung LEE ,  Jinseong HEO

IPC: H01L27/146

CPC classification number: H01L27/14667 ,  B82Y15/00 ,  H01L27/14636 ,  H01L31/0264 ,  H01L31/074

Abstract: Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.