公开(公告)号：US20180130843A1

公开(公告)日：2018-05-10

申请号：US15800229

申请日：2017-11-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sanghyun JO ,  Jaeho LEE ,  Eunkyu LEE ,  Seongjun PARK ,  Kiyoung LEE ,  Jinseong HEO

IPC: H01L27/146

CPC classification number: H01L27/14667 ,  B82Y15/00 ,  H01L27/14636 ,  H01L31/0264 ,  H01L31/074

Abstract: Example embodiments relate to an image sensor configured to achieve a high photoelectric conversion efficiency and a low dark current. The image sensor includes first and second electrodes, a plurality of photodetection layers provided between the first and second electrodes, and an interlayer provided between the photodetection layers. The photodetection layers convert incident light into an electrical signal and include a semiconductor material. The interlayer includes a metallic or semi metallic material having anisotropy in electrical conductivity.

公开(公告)号：US20180090317A1

公开(公告)日：2018-03-29

申请号：US15817979

申请日：2017-11-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Minhyun LEE ,  Hyeonjin SHIN ,  Jaeho LEE ,  Haeryong KIM

IPC: H01L21/02 ,  H01L29/06 ,  H01L29/778 ,  H01L29/66 ,  H01L29/786 ,  H01L29/78 ,  H01L29/16 ,  H01L29/24 ,  H01L29/41

CPC classification number: H01L21/02568 ,  H01L21/0259 ,  H01L21/02628 ,  H01L29/0673 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/413 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/778 ,  H01L29/7839 ,  H01L29/786 ,  H01L29/78654 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696

Abstract: An electronic device includes first and second electrodes that are spaced apart from each other and a 2D material layer. The 2D material layer connects the first and second electrodes. The 2D material layer includes a plurality of 2D nanomaterials. At least some of the 2D nanomaterials overlap one another.

公开(公告)号：US20170033003A1

公开(公告)日：2017-02-02

申请号：US15172908

申请日：2016-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyunjae SONG ,  Seunggeol NAM ,  Seongjun PARK ,  Keunwook SHIN ,  Hyeonjin SHIN ,  Jaeho LEE ,  Changseok LEE ,  Yeonchoo CHO

IPC: H01L21/768 ,  H01L21/285 ,  H01L23/532 ,  H01L29/45

CPC classification number: H01L21/76846 ,  H01L21/28525 ,  H01L21/28568 ,  H01L23/485 ,  H01L23/53209 ,  H01L23/53238 ,  H01L23/53266 ,  H01L23/53271 ,  H01L29/45

Abstract: A multilayer structure includes a first material layer, a second material layer, and a diffusion barrier layer. The second material layer is connected to the first material layer. The second material layer is spaced apart from the first material layer. The diffusion barrier layer is between the first material layer and the second material layer. The diffusion barrier layer may include a two-dimensional (2D) material. The 2D material may be a non-graphene-based material, such as a metal chalcogenide-based material having a 2D crystal structure. The first material layer may be a semiconductor or an insulator, and the second material layer may be a conductor. At least a part of the multilayer structure may constitute an interconnection for an electronic device.

Abstract translation: 多层结构包括第一材料层，第二材料层和扩散阻挡层。 第二材料层连接到第一材料层。 第二材料层与第一材料层间隔开。 扩散阻挡层在第一材料层和第二材料层之间。 扩散阻挡层可以包括二维（2D）材料。 2D材料可以是非石墨烯材料，例如具有2D晶体结构的金属硫族化物基材料。 第一材料层可以是半导体或绝缘体，第二材料层可以是导体。 多层结构的至少一部分可以构成电子设备的互连。

公开(公告)号：US20160359062A1

公开(公告)日：2016-12-08

申请号：US14932701

申请日：2015-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Kiyoung LEE ,  Jaeho LEE ,  Sangyeob LEE ,  Eunkyu LEE ,  Seongjun PARK

IPC: H01L31/0352 ,  H01L31/18 ,  H01L31/0264

CPC classification number: H01L31/0352 ,  H01L31/0264 ,  H01L31/028 ,  H01L31/032 ,  H01L31/035218 ,  H01L31/036 ,  H01L31/112 ,  H01L31/18 ,  Y02E10/547

Abstract: An optical device including a two-dimensional material and a method of manufacturing the same are provided. The optical device may include a barrier stack formed on a bottom channel layer, a top channel layer formed on the barrier stack, a drain electrode connected to the bottom channel layer, a source electrode formed on a substrate. The barrier stack may include two or more barrier layers, and one or more channel units at least partially interposing between the barrier layers. Channel units connected to the drain electrode and channel units connected to the source electrode may be formed, in an alternating sequence, between barrier layers included in the barrier stack. The barrier layers may each have a thickness which is less than a distance which may be traveled by electrons and holes generated by photo absorption prior to recombination. As a result, the optical device may provide improved photo separation efficiency.

Abstract translation: 提供了包括二维材料的光学装置及其制造方法。 光学器件可以包括形成在底部沟道层上的势垒堆叠，形成在势垒堆叠上的顶部沟道层，连接到底部沟道层的漏电极，形成在衬底上的源电极。 势垒堆叠可以包括两个或更多个阻挡层，以及至少部分地插入阻挡层之间的一个或多个沟道单元。 连接到漏电极的通道单元和连接到源极的通道单元可以以交替的顺序形成在阻挡叠层中包括的阻挡层之间。 阻挡层可以各自具有小于在复合之前由光吸收产生的电子和空穴行进的距离的厚度。 结果，光学装置可以提供改善的光分离效率。

公开(公告)号：US20160343891A1

公开(公告)日：2016-11-24

申请号：US14971019

申请日：2015-12-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinseong HEO ,  Kiyoung LEE ,  Sangyeob LEE ,  Eunkyu LEE ,  Jaeho LEE ,  Seongjun PARK

IPC: H01L31/032 ,  H01L31/0352 ,  H01L27/144 ,  H01L29/786 ,  H01L29/12 ,  H01L29/45 ,  H01L29/66 ,  H01L31/0224 ,  H01L29/24

CPC classification number: H01L31/032 ,  H01L27/1446 ,  H01L29/127 ,  H01L29/1606 ,  H01L29/24 ,  H01L29/45 ,  H01L29/66977 ,  H01L29/786 ,  H01L31/022408 ,  H01L31/022425 ,  H01L31/022466 ,  H01L31/035209 ,  H01L31/035218 ,  H01L31/035227 ,  H01L31/035281 ,  H01L31/1884 ,  Y02E10/50

Abstract: Example embodiments relate to semiconductor devices including two-dimensional (2D) materials, and methods of manufacturing the semiconductor devices. A semiconductor device may be an optoelectronic device including at least one doped 2D material. The optoelectronic device may include a first electrode, a second electrode, and a semiconductor layer between the first and second electrodes. At least one of the first electrode and the second electrode may include doped graphene. The semiconductor layer may have a built-in potential greater than or equal to about 0.1 eV, or greater than or equal to about 0.3 eV. One of the first electrode and the second electrode may include p-doped graphene, and the other may include n-doped graphene. Alternatively, one of the first electrode and the second electrode may include p-doped or n-doped graphene, and the other may include a metallic material.

Abstract translation: 示例实施例涉及包括二维（2D）材料的半导体器件以及制造半导体器件的方法。 半导体器件可以是包括至少一种掺杂的2D材料的光电子器件。 光电子器件可以包括第一电极，第二电极和第一和第二电极之间的半导体层。 第一电极和第二电极中的至少一个可以包括掺杂的石墨烯。 半导体层可具有大于或等于约0.1eV，或大于或等于约0.3eV的内置电位。 第一电极和第二电极之一可以包括p掺杂的石墨烯，另一个可以包括n掺杂的石墨烯。 或者，第一电极和第二电极中的一个可以包括p掺杂或n掺杂的石墨烯，另一个可以包括金属材料。

公开(公告)号：US20160336439A1

公开(公告)日：2016-11-17

申请号：US15015307

申请日：2016-02-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaeho LEE ,  Jinseong Heo ,  Seongjun Park

IPC: H01L29/788 ,  H01L29/49 ,  H01L29/16 ,  H01L29/24 ,  H01L29/786 ,  H01L29/165

CPC classification number: H01L29/78696 ,  H01L29/1606 ,  H01L29/66045 ,  H01L29/778 ,  H01L29/788

Abstract: Example embodiments relate to nonvolatile memory devices using a 2D material, and methods of manufacturing the nonvolatile memory device. The nonvolatile memory device includes a channel layer formed on a substrate, a gate stack that includes a gate electrode, source and drain electrodes. The channel layer has a threshold voltage greater than that of a graphene layer, and the gate stack includes a 2D material floating gate that is not in contact with the channel layer. The channel layer includes first and second material layers and a first barrier layer disposed between the first and second material layers, and the first and second material layers may contact the first barrier layer.

Abstract translation: 示例性实施例涉及使用2D材料的非易失性存储器件以及制造非易失性存储器件的方法。 非易失性存储器件包括形成在衬底上的沟道层，栅堆叠，其包括栅电极，源电极和漏电极。 沟道层具有大于石墨烯层的阈值电压的阈值电压，并且栅极堆叠包括不与沟道层接触的2D材料浮动栅极。 沟道层包括第一和第二材料层和设置在第一和第二材料层之间的第一阻挡层，并且第一和第二材料层可以接触第一阻挡层。

公开(公告)号：US20160126317A1

公开(公告)日：2016-05-05

申请号：US14928026

申请日：2015-10-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyowon KIM ,  Jaeho LEE

IPC: H01L29/16 ,  H01L21/02

CPC classification number: H01L29/1606 ,  C01B32/186 ,  C01B2204/02 ,  C01B2204/22 ,  C01B2204/30 ,  H01L21/02527 ,  H01L21/02573 ,  H01L21/02645 ,  H01L29/6603 ,  H01L51/0045 ,  H01L51/0558 ,  Y02E10/549

Abstract: A graphene layer, a method of forming the graphene layer, a device including the graphene layer, and a method of manufacturing the device are provided. The method of forming the graphene layer may include forming a first graphene at a first temperature using a first source gas and forming a second graphene at a second temperature using a second source gas. One of the first and second graphenes may be a P-type graphene, and the other one of the first and second graphenes may be an N-type graphene. The first graphene and the second graphene together form a P—N junction.

Abstract translation: 提供石墨烯层，形成石墨烯层的方法，包括石墨烯层的装置以及制造该装置的方法。 形成石墨烯层的方法可以包括使用第一源气体在第一温度下形成第一石墨烯，并且在第二温度下使用第二源气体形成第二石墨烯。 第一和第二石墨烯之一可以是P型石墨烯，第一和第二石墨烯中的另一个可以是N型石墨烯。 第一个石墨烯和第二个石墨烯一起形成一个P-N结。

公开(公告)号：US20150155374A1

公开(公告)日：2015-06-04

申请号：US14528338

申请日：2014-10-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyungeun BYUN ,  Jisoo KYOUNG ,  Seongjun PARK ,  Hyeonjin SHIN ,  Hyunjae SONG ,  Jaeho LEE

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/267

CPC classification number: H01L29/66977 ,  H01L29/456 ,  H01L29/78

Abstract: An electronic device includes a semiconductor layer, a tunneling layer formed of a material including a two-dimensional (2D) material so as to directly contact a certain region of the semiconductor layer, and a metal layer formed on the tunneling layer.

Abstract translation: 电子器件包括半导体层，由包括二维（2D）材料的材料形成的隧道层，以便直接接触半导体层的特定区域，以及形成在隧道层上的金属层。

公开(公告)号：US20130321219A1

公开(公告)日：2013-12-05

申请号：US13905710

申请日：2013-05-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Youngjun CHO ,  Byungman LIM ,  Donghwan KIM ,  Sukho KIM ,  Jaeho LEE

IPC: H01Q1/24

CPC classification number: H01Q1/243 ,  H01Q9/0421 ,  H01Q21/28 ,  Y10T29/49016

Abstract: A built-in antenna of a hand-held electronic device has separable radiators. The antenna includes a first radiator mounted to a first housing portion of the electronic device, and a second radiator mounted to a second housing portion. The first radiator and second radiator are electrically connected to each other when the first and second housing portions are assembled.

Abstract translation: 手持电子设备的内置天线具有可分离的散热器。 天线包括安装到电子设备的第一壳体部分的第一辐射器和安装到第二壳体部分的第二辐射器。 当组装第一和第二壳体部分时，第一散热器和第二散热器彼此电连接。

公开(公告)号：US20240118763A1

公开(公告)日：2024-04-11

申请号：US18540367

申请日：2023-12-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Mansung KIM ,  Minuk KIM ,  Bongjun KO ,  Jaeho LEE ,  Yoondo JUNG

IPC: G06F3/041 ,  G06F1/16

CPC classification number: G06F3/0416 ,  G06F1/1643 ,  G06F1/1652 ,  G06F1/1681 ,  G06F2203/04101

Abstract: An electronic device includes: a hinge structure; a first housing connected to the hinge structure and including a first surface and a second surface; a second housing connected to the hinge structure and including a third surface and a fourth surface; a flexible display; a touch sensor; memory; and a processor, wherein the memory stores instructions configured to cause, when executed by the processor, the electronic device to, identify first coordinate information of at least one object on a first area of the flexible display and second coordinate information of the at least one object on a second area of the flexible display by using the touch sensor; and on the basis of the identified first coordinate information and the identified second coordinate information, identify three-dimensional coordinate information of the at least one object in the space formed by the first surface and the third surface.