Ultraviolet illuminator
    21.
    发明授权

    公开(公告)号:US10124081B2

    公开(公告)日:2018-11-13

    申请号:US15830274

    申请日:2017-12-04

    Abstract: A solution for disinfecting an area using ultraviolet radiation is provided. The solution can include an enclosure including at least one ultraviolet transparent window and a set of ultraviolet radiation sources located adjacent to the at least one ultraviolet transparent window. The set of ultraviolet radiation sources can be configured to generate ultraviolet radiation directed through the at least one ultraviolet transparent window. An input unit can be located on the enclosure and configured to generate an electrical signal in response to pressure applied to the enclosure. A control unit can be configured to manage the ultraviolet radiation by monitoring the electrical signal generated by the input unit and controlling, based on the monitoring, the ultraviolet radiation generated by the set of ultraviolet radiation sources.

    Storage Device Including Ultraviolet Illumination
    23.
    发明申请
    Storage Device Including Ultraviolet Illumination 有权
    包括紫外线照明的存储设备

    公开(公告)号:US20150165079A1

    公开(公告)日:2015-06-18

    申请号:US14629508

    申请日:2015-02-24

    Abstract: Ultraviolet radiation is directed within an area. Items located within the area and/or one or more conditions of the area are monitored over a period of time. Based on the monitoring, ultraviolet radiation sources are controlled by adjusting a direction, an intensity, a pattern, and/or a spectral power of the ultraviolet radiation generated by the ultraviolet radiation source. Adjustments to the ultraviolet radiation source(s) can correspond to one of a plurality of selectable operating configurations including a storage life preservation operating configuration, a disinfection operating configuration, and an ethylene decomposition operating configuration.

    Abstract translation: 紫外线辐射指向一个区域内。 在一段时间内监视位于该区域内的区域和/或该区域的一个或多个条件。 基于监测,通过调节由紫外线辐射源产生的紫外线辐射的方向,强度,图案和/或光谱功率来控制紫外线辐射源。 对紫外线辐射源的调整可以对应于多个可选操作配置中的一个,包括存储寿命保存操作配置,消毒操作配置和乙烯分解操作配置。

    Multi-Wafer Reactor
    24.
    发明申请
    Multi-Wafer Reactor 有权
    多晶硅反应堆

    公开(公告)号:US20140113389A1

    公开(公告)日:2014-04-24

    申请号:US14060173

    申请日:2013-10-22

    Abstract: A solution for manufacturing semiconductors is provided. An embodiment provides a chemical vapor deposition reactor, which includes a chemical vapor deposition chamber. A substrate holder located in the chemical vapor deposition chamber can be rotated about its own axis at a first angular speed, and a gas injection component located in the chemical vapor deposition chamber can be rotated about an axis of the gas injection component at a second angular speed. The angular speeds are independently selectable and can be configured to cause each point on a surface of a substrate wafer to travel in an epicyclical trajectory within a gas flow injected by the gas injection component. An angle between the substrate holder axis and the gas injection component axis and/or a distance between the substrate holder axis and the gas injection component axis can be controlled variables.

    Abstract translation: 提供制造半导体的解决方案。 实施例提供了一种化学气相沉积反应器,其包括化学气相沉积室。 位于化学气相沉积室中的衬底保持器可以以其第一角速度围绕其自身的轴线旋转,并且位于化学气相沉积室中的气体注入组件可以围绕气体注入部件的轴线以第二角度 速度。 角速度是可独立选择的,并且可以被配置成使得衬底晶片的表面上的每个点在由气体注入部件注入的气流中的行星轨迹中行进。 衬底保持器轴线和气体注入部件轴线之间的角度和/或衬底保持器轴线和气体注入部件轴线之间的距离可以是受控变量。

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