公开(公告)号：US11136669B2

公开(公告)日：2021-10-05

申请号：US16225788

申请日：2018-12-19

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi Kato ,  Takeshi Kobayashi ,  Toshiyuki Nakatsubo

IPC: C23C16/458 ,  C23C14/54 ,  H01L21/683 ,  C23C16/455 ,  H01L21/687

Abstract: A film formation apparatus includes a rotary table provided in a processing container; a mounting table mounting a substrate and revolved by rotation of the rotary table; a film formation gas supply part configured to supply a film formation gas to a region through which the mounting table passes by the rotation of the rotary table; a spinning shaft rotatably provided on a portion rotating together with the rotary table; a driven gear provided on the spinning shaft; a driving gear configured to rotate while facing a revolution orbit of the driven gear and provided along an entire circumference of the revolution orbit so as to constitute a magnetic gear mechanism with the driven gear, and a relative-distance-changing mechanism configured to change a relative distance between the revolution orbit of the driven gear and the driving gear.

公开(公告)号：US11118267B2

公开(公告)日：2021-09-14

申请号：US16416609

申请日：2019-05-20

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi Kato ,  Toshiyuki Nakatsubo ,  Takeshi Kobayashi ,  Tomoya Hasegawa

IPC: C23C16/458 ,  C23C16/455

Abstract: A method of processing a substrate, includes: mounting at least one substrate on at least one substrate holder configured to rotate about an axis of the at least one substrate holder, the at least one substrate holder being provided along a circumferential direction of a rotary table installed inside a processing chamber; holding the at least one substrate by the at least one substrate holder in a contact manner by bringing a substrate contact portion into contact with at least three points on a lateral surface of the at least one substrate mounted on the at least one substrate holder; and performing a substrate process while rotating the rotary table and rotating the at least one substrate holder about the axis of the at least one substrate holder in a state where the at least one substrate is held by the at least one substrate holder in the contact manner.

公开(公告)号：US11118265B2

公开(公告)日：2021-09-14

申请号：US15811919

申请日：2017-11-14

Applicant: Tokyo Electron Limited

Inventor： Shigenori Ozaki ,  Hitoshi Kato ,  Takeshi Kumagai

IPC: C23C16/455 ,  C23C16/40

Abstract: A film deposition method includes steps of: placing a substrate in a substrate receiving area of a susceptor provided in a vacuum chamber; evacuating the vacuum chamber; alternately supplying plural kinds of reaction gases to the substrate in the substrate receiving area from corresponding reaction gas supplying parts thereby to form a thin film on the substrate; supplying plasma including a chemical component that reacts with second reaction gas adsorbed on the substrate from a plasma generation part to the substrate when the thin film is being formed, thereby to alter the thin film on the substrate; and changing plasma intensity of the plasma supplied to the substrate, at a predetermined point of time to a different plasma intensity of the plasma that is generated and supplied to the substrate by the plasma generation part before the predetermined point of time.

公开(公告)号：US11085113B2

公开(公告)日：2021-08-10

申请号：US16021888

申请日：2018-06-28

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi Kato ,  Shigehiro Miura ,  Hiroyuki Kikuchi ,  Katsuyoshi Aikawa

IPC: C23C16/52 ,  C23C16/458 ,  C23C16/455 ,  H01L21/687 ,  H01J37/32 ,  C23C16/44 ,  H01L21/67

Abstract: A film forming apparatus includes a rotary table having a loading area at a first surface side thereof and revolving a substrate loaded on the loading area, a rotation mechanism rotating the loading area such that the substrate rotates around its axis, a processing gas supply mechanism supplying a processing gas to a processing gas supply area so that a thin film is formed on the substrate which repeatedly passes through the processing gas supply area the revolution of the substrate, and a control part configured to perform a calculation of a rotation speed of the substrate based on a parameter including a rotation speed of the rotary table to allow an orientation of the substrate to be changed whenever the substrate is positioned in the processing gas supply area, and to output a control signal for rotating the substrate at a calculated rotation speed.

公开(公告)号：US10787740B2

公开(公告)日：2020-09-29

申请号：US16223638

申请日：2018-12-18

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/40 ,  C23C16/34 ,  C23C16/46 ,  C23C16/458

Abstract: A film formation time setting method to be implemented when forming silicon-containing films on a plurality of substrates arranged on a rotary table includes a film thickness measuring step of performing a provisional film forming process for a provisional film formation time T×N, provisionally set up based on a cycle time T and a number of cycles N, measuring film thicknesses dN-1 of the silicon-containing films formed on the substrates at an end time of the (N-1)th cycle, measuring film thicknesses dN-1˜N of the silicon-containing films at an intermediate time between the (N-1)th cycle and the Nth cycle, and measuring film thicknesses dN of the silicon-containing films at an end time of the Nth cycle; and a film formation time specifying step of comparing the inter-plane uniformities of the silicon-containing films at the respective times to specify and set a film formation time for achieving an optimal inter-plane uniformity.

公开(公告)号：US10480067B2

公开(公告)日：2019-11-19

申请号：US15420333

申请日：2017-01-31

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Masahiro Murata ,  Jun Sato ,  Shigehiro Miura

IPC: C23C16/24 ,  C23C16/50 ,  C23C16/34 ,  C23C16/455 ,  H01J37/32

Abstract: A film deposition method for filling a recessed pattern with a SiN film is provided. NH2 groups are caused to adsorb on a surface of a substrate containing a recessed pattern formed in a top surface of the substrate by supplying a first process gas containing NH3 converted to first plasma to the surface of the substrate containing the recessed pattern. The NH2 groups is partially converted to N groups by supplying a second process gas containing N2 converted to second plasma to the surface of the substrate containing the recessed pattern on which the NH2 groups is adsorbed. A silicon-containing gas is caused to adsorb on the NH2 groups by supplying the silicon-containing gas to the surface of the substrate containing the recessed pattern on which the NH2 groups and the N groups are adsorbed. The above steps are cyclically repeated.

公开(公告)号：US10153131B2

公开(公告)日：2018-12-11

申请号：US15469910

申请日：2017-03-27

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi Kato

IPC: H01J37/32

Abstract: A plasma processing apparatus includes a processing chamber, a rotation table installed in the processing chamber and configured to load a substrate on an upper surface of the rotation table along a circumferential direction of the rotation table, and a plasma generator including an antenna located above an upper surface of the processing chamber and installed to be able to move in a radial direction of the rotation table, wherein the plasma generator is configured to locally apply plasma to the rotation table in the radial direction.

公开(公告)号：US10026606B2

公开(公告)日：2018-07-17

申请号：US15637208

申请日：2017-06-29

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Yutaka Takahashi ,  Masahiro Murata

IPC: H01L21/02 ,  H01L21/28 ,  C23C16/34

Abstract: A method for depositing a silicon nitride film is provided. A nitrided adsorption site is formed in a recess formed in a surface of a substrate by supplying an ammonia-containing gas to the substrate for nitriding the surface of the substrate including the recess. A non-adsorption site is formed in a predetermined upper area of the recess by adsorbing a chlorine-containing gas on the nitride adsorption site in the predetermined upper area by physical adsorption. The predetermined upper area ranges from an upper end of the recess to a predetermined depth of the recess. A silicon-containing gas is adsorbed on the nitride adsorption site other than the predetermined upper area so as to deposit a silicon nitride film by a chemical reaction between the adsorbed ammonia-containing gas and the adsorbed silicon-containing gas. The nitride adsorption site includes a bottom surface of the recess.

公开(公告)号：US09714467B2

公开(公告)日：2017-07-25

申请号：US14613656

申请日：2015-02-04

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Jun Sato ,  Masahiro Murata ,  Kentaro Oshimo ,  Tomoko Sugano ,  Shigehiro Miura

IPC: C23C16/458 ,  C23C16/44 ,  C23C16/52 ,  H01L21/02 ,  C23C16/34 ,  C23C16/455 ,  C23C16/507

CPC classification number: C23C16/4584 ,  C23C16/345 ,  C23C16/45519 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/507 ,  C23C16/52 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228

Abstract: A method for processing a substrate is provided. According to the method, a process gas is supplied to a surface of a substrate, and then a separation gas is supplied to the surface of the substrate. Moreover, a first plasma processing gas is supplied to the surface of the substrate in a first state in which a distance between the first plasma generation unit and the turntable is set at a first distance, and a second plasma processing gas is supplied to the surface of the substrate in a second state in which a distance between the second plasma generation unit and the turntable is set at a second distance shorter than the first distance. Furthermore, the separation gas is supplied to the surface of the substrate.

公开(公告)号：US09711370B2

公开(公告)日：2017-07-18

申请号：US14831961

申请日：2015-08-21

Applicant: Tokyo Electron Limited

Inventor： Shigehiro Miura ,  Hitoshi Kato ,  Jun Sato ,  Hiroyuki Kikuchi

IPC: H01L21/311 ,  C23C16/52 ,  H01L21/687 ,  C23C16/455 ,  H01L21/02

CPC classification number: H01L21/31116 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/52 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/0228 ,  H01L21/68764 ,  H01L21/68771

Abstract: A method of processing a substrate is provided. A substrate is placed on a turntable provided in a process chamber. The process chamber includes a process area for supplying an etching gas and a purge area for supplying a purge gas. The process area and the purge area are arranged along a rotational direction of the turntable and divided from each other. The etching gas is supplied into the process area. The purge gas is supplied into the purge area. The turntable rotates to cause the substrate placed on the turntable to pass through the process area and the purge area once per revolution, respectively. A film deposited on a surface of the substrate is etched when the substrate passes the process are. An etching rate of the etching or a surface roughness of the film is controlled by changing a rotational speed of the turntable.