公开(公告)号：US11359279B2

公开(公告)日：2022-06-14

申请号：US16666621

申请日：2019-10-29

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Makoto Ishigo ,  Jun Sato

IPC: C23C16/44 ,  H01J37/32 ,  H01L21/02

Abstract: A cleaning method for dry cleaning a susceptor disposed in a process chamber of a film deposition apparatus is provided. In the method, a protective member is placed on a substrate receiving region provided in the susceptor. A cleaning gas is supplied to the susceptor having the protective member placed on the substrate receiving region, thereby removing a film deposited on a surface of the susceptor by etching.

公开(公告)号：US10790182B2

公开(公告)日：2020-09-29

申请号：US15018139

申请日：2016-02-08

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi Kato

IPC: H01L21/687 ,  H01L21/67

Abstract: There is provided a substrate holding mechanism of holding a substrate in a predetermined substrate holding region on a susceptor, including: a substrate holding member installed around the substrate holding region and configured to be in contact with a lateral surface of the substrate mounted on the substrate holding region at a predetermined contact surface of the substrate holding member when the substrate holding member is rotated inward of the substrate holding region; a biasing part configured to apply a biasing force with respect to the substrate holding member such that the substrate holding member is brought into contact with the lateral surface of the substrate to hold the substrate; and a release member configured to apply a pressing force against the biasing force of the biasing part with respect to the substrate holding member such that the substrate holding member is released to vertically lift up the substrate.

公开(公告)号：US09865454B2

公开(公告)日：2018-01-09

申请号：US14522711

申请日：2014-10-24

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Hiroyuki Kikuchi ,  Masato Yonezawa ,  Jun Sato ,  Shigehiro Miura

IPC: H01L21/67 ,  H01L21/02 ,  C23C16/458 ,  C23C16/505 ,  C23C16/455 ,  H01J37/32 ,  H01L21/311

CPC classification number: H01L21/02211 ,  C23C16/45538 ,  C23C16/45551 ,  C23C16/4584 ,  C23C16/505 ,  H01J37/3244 ,  H01J37/32513 ,  H01J37/32568 ,  H01L21/02164 ,  H01L21/02219 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/31138

Abstract: A substrate processing apparatus includes a vacuum chamber including a top plate, a rotary table rotatably disposed in the vacuum chamber, a first process gas supply part that supplies a first process gas to be adsorbed on a surface of a substrate placed on the rotary table, a plasma processing gas supply part that is disposed apart from the first process gas supply part in a circumferential direction of the rotary table and supplies a second process gas to the surface of the substrate, a separation gas supply part that supplies a separation gas for separating the first process gas and the second process gas, a plasma generator that converts the second process gas into plasma, and an elevating mechanism that moves at least one of the plasma generator and the rotary table upward and downward.

公开(公告)号：US09702043B2

公开(公告)日：2017-07-11

申请号：US13859803

申请日：2013-04-10

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Katsuyuki Hishiya

IPC: C23C16/00 ,  C23C16/458 ,  C23C16/46 ,  C23C16/44

CPC classification number: C23C16/4584 ,  C23C16/4401 ,  C23C16/46

Abstract: A substrate processing apparatus includes a vacuum chamber; a turntable rotatably provided in the vacuum chamber, on which a circular substrate is to be mounted, and provided with a circular concave portion at a front surface having a larger diameter than that of the substrate, and a circular substrate mounting portion provided in the concave portion having a diameter smaller than that of the concave portion and the substrate at a position higher than a bottom portion of the concave portion, the center of the substrate mounting portion being off center with respect to the center of the concave portion toward an outer peripheral portion side of the turntable; a process gas supplying unit which supplies a process gas to the substrate; and a vacuum evacuation mechanism which evacuates the vacuum chamber.

公开(公告)号：US09376751B2

公开(公告)日：2016-06-28

申请号：US14614926

申请日：2015-02-05

Applicant: Tokyo Electron Limited

Inventor： Shigehiro Miura ,  Hitoshi Kato ,  Jun Sato ,  Takeshi Kobayashi ,  Masato Yonezawa

IPC: H01J37/32 ,  H01L21/302 ,  C23C16/455 ,  C23C16/52 ,  C23C16/458

CPC classification number: H01J37/32532 ,  C23C16/45525 ,  C23C16/45536 ,  C23C16/45544 ,  C23C16/45551 ,  C23C16/45578 ,  C23C16/4584 ,  C23C16/50 ,  C23C16/52 ,  H01J37/32009 ,  H01J37/32091 ,  H01J37/32165 ,  H01J37/3244 ,  H01J2237/334

Abstract: An operation method of a plasma processing device, includes performing a plasma process on a workpiece by supplying first high frequency power of a predetermined output to an electrode and generating plasma; and performing a charge storage process before the plasma process when a time interval from an end of a previous operation of the plasma processing device exceeds a predetermined interval, the charge storage process including supplying, to the electrode, second high frequency power of a lower output than the predetermined output.

Abstract translation: 一种等离子体处理装置的操作方法，包括：通过向电极提供预定输出的第一高频功率并产生等离子体，对工件进行等离子体处理; 以及当从所述等离子体处理装置的先前操作结束的时间间隔超过预定间隔时，在所述等离子体处理之前执行电荷存储处理，所述电荷存储处理包括向所述电极提供较低输出的第二高频功率 比预定输出。

公开(公告)号：US09111747B2

公开(公告)日：2015-08-18

申请号：US13916847

申请日：2013-06-13

Applicant: Tokyo Electron Limited

Inventor： Jun Yamawaku ,  Chishio Koshimizu ,  Mitsuhiro Tachibana ,  Hitoshi Kato ,  Takeshi Kobayashi ,  Shigehiro Miura ,  Takafumi Kimura

IPC: H01L21/31 ,  H01L21/02 ,  C23C16/455 ,  C23C16/509 ,  H01L21/687

CPC classification number: H01L21/02104 ,  C23C16/45519 ,  C23C16/4554 ,  C23C16/45551 ,  C23C16/509 ,  H01L21/02164 ,  H01L21/02167 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/0234 ,  H01L21/68764 ,  H01L21/68771

Abstract: A film deposition apparatus configured to perform a film deposition process on a substrate in a vacuum chamber includes a turntable configured to rotate a substrate loading area to receive the substrate, a film deposition area including at least one process gas supplying part configured to supply a process gas onto the substrate loading area and configured to form a thin film by depositing at least one of an atomic layer and a molecular layer along with a rotation of the turntable, a plasma treatment part provided away from the film deposition area in a rotational direction of the turntable and configured to treat the at least one of the atomic layer and the molecular layer for modification by plasma, and a bias electrode part provided under the turntable without contacting the turntable and configured to generate bias potential to attract ions in the plasma toward the substrate.

Abstract translation: 一种被配置为在真空室中的基板上进行成膜处理的成膜装置，包括转盘，其被配置为使基板装载区域旋转以接收基板;膜沉积区域，包括至少一个工艺气体供给部件， 气体到基板装载区域，并且被配置为通过沉积转盘的旋转中的原子层和分子层中的至少一个来形成薄膜，等离子体处理部件沿着旋转方向设置在膜沉积区域 所述转盘并且被配置为处理所述原子层和所述分子层中的至少一个以进行等离子体修饰;以及偏置电极部分，其设置在所述转盘下方，而不接触所述转台并且被配置为产生偏置电位以将等离子体中的离子吸引到 基质。

公开(公告)号：US08927440B2

公开(公告)日：2015-01-06

申请号：US13936523

申请日：2013-07-08

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Shigehiro Miura

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/02 ,  C23C16/455 ,  C23C16/458

CPC classification number: H01L21/0228 ,  C23C16/45508 ,  C23C16/45551 ,  C23C16/45587 ,  C23C16/4584

Abstract: A film deposition apparatus that laminates layers of reaction product by repeating cycles of sequentially supplying process gases that mutually reacts in a vacuum atmosphere includes a turntable receiving a substrate, process gas supplying portions supplying mutually different process gases to separated areas arranged in peripheral directions, and a separation gas supplying portion separating the process gases, wherein at least one process gas supplying portion extends between peripheral and central portions of the turntable and includes a gas nozzle discharging one process gas toward the turntable and a current plate provided on an upstream side to allow the separation gas to flow onto its upper surface, wherein a gap between the current plate and the turntable is gradually decreased from a central side of the turntable to a peripheral side of the turntable, and the gap is smaller on the peripheral side by 1 mm or greater.

Abstract translation: 一种成膜装置，其通过重复连续地供给在真空气氛中相互反应的处理气体的循环来层叠反应产物层，包括：接收基板的转台，向周向排列的分离区域供给相互不同的处理气体的处理气体供给部;以及 分离工艺气体的分离气体供给部分，其中至少一个工艺气体供应部分在转盘的周边部分和中心部分之间延伸，并且包括将一个工艺气体朝向转盘排出的气体喷嘴和设置在上游侧的电流板，以允许 分离气体流向其上表面，其中当前板和转盘之间的间隙从转台的中心侧逐渐减小到转盘的周边，并且周边侧的间隙较小 或更大。

公开(公告)号：US08835332B2

公开(公告)日：2014-09-16

申请号：US13726731

申请日：2012-12-26

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato ,  Tatsuya Tamura ,  Takeshi Kumagai

IPC: H01L21/00 ,  H01L21/02 ,  H01L21/30 ,  C23C14/00 ,  H01L21/762

CPC classification number: C23C16/45536 ,  C23C14/00 ,  C23C16/045 ,  C23C16/402 ,  C23C16/45519 ,  C23C16/45529 ,  C23C16/45551 ,  H01L21/02164 ,  H01L21/0228 ,  H01L21/30 ,  H01L21/76224

Abstract: A film deposition method, in which a film of a reaction product of a first reaction gas, which tends to be adsorbed onto hydroxyl radicals, and a second reaction gas capable of reacting with the first reaction gas is formed on a substrate provided with a concave portion, includes a step of controlling an adsorption distribution of the hydroxyl radicals in a depth direction in the concave portion of the substrate; a step of supplying the first reaction gas on the substrate onto which the hydroxyl radicals are adsorbed; and a step of supplying the second reaction gas on the substrate onto which the first reaction gas is adsorbed.

Abstract translation: 一种成膜方法，其中在具有凹面的基板上形成有容易吸附在羟基上的第一反应气体的反应产物的膜和能够与第一反应气体反应的第二反应气体的膜 包括在基板的凹部中控制深度方向的羟基的吸附分布的工序; 将第一反应气体供给到其上吸附羟基的基材上的步骤; 以及在吸附有第一反应气体的基板上供给第二反应气体的工序。

公开(公告)号：US11155918B2

公开(公告)日：2021-10-26

申请号：US15896366

申请日：2018-02-14

Applicant: TOKYO ELECTRON LIMITED

Inventor： Hitoshi Kato

IPC: C23C16/455 ,  H01J37/32 ,  C23C16/40 ,  C23C16/452 ,  C23C16/458 ,  H01L21/673 ,  H01L21/687 ,  C23C16/505

Abstract: A film forming apparatus includes: first and second processing gas supply parts configured to supply first and second processing gases, respectively; a plasma-generating gas supply part configured to supply a plasma-generating gas; a plasma forming part configured to convert the plasma-generating gas into plasma; a receiving vessel inserted into an opening formed in a ceiling portion of a vacuum vessel, the receiving vessel having a bottom surface portion facing a rotary table and being engaged with the plasma forming part on an upper surface of the bottom surface portion; a dielectric shield member arranged between the receiving vessel and an inner peripheral surface of the opening; a height adjustment part configured to adjust an arrangement height position of the bottom surface portion; and one or more sealing parts configured to hermetically close a space between the vacuum vessel and the receiving vessel.

公开(公告)号：US10920316B2

公开(公告)日：2021-02-16

申请号：US16431972

申请日：2019-06-05

Applicant: Tokyo Electron Limited

Inventor： Hitoshi Kato

IPC: C23C16/455 ,  C23C16/44 ,  C23C16/34 ,  C23C16/40 ,  C23C16/458

Abstract: A substrate processing apparatus includes a process chamber, and a turntable disposed in the process chamber. A surface of the turntable receives a substrate along a circumferential direction. A process gas supply part includes a process gas discharge surface configured to supply a process gas to the turntable. A space partition extends from the process gas discharge surface toward a downstream side of the process gas discharge surface in a rotational direction of the turntable and is configured to cover a part of the turntable and to form a lower space and an upper space. An exhaust duct is disposed downstream of the space partition and extends along a radial direction of the turntable. The exhaust duct has a lower exhaust opening in its lateral surface lower than the space partition. An upper exhaust opening is disposed higher than the space partition.