公开(公告)号：US20210082666A1

公开(公告)日：2021-03-18

申请号：US16572708

申请日：2019-09-17

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Peter Ventzek

IPC: H01J37/32 ,  H01L21/66

Abstract: An exemplary plasma processing system includes a plasma processing chamber, an electrode for powering plasma in the plasma processing chamber, a tunable radio frequency (RF) signal generator configured to output a first signal at a first frequency and a second signal at a second frequency. The second frequency is at least 1.1 times the first frequency. The system includes a broadband power amplifier coupled to the tunable RF signal generator, the first frequency and the second frequency being within an operating frequency range of the broadband power amplifier. The output of the broadband power amplifier is coupled to the electrode. The broadband power amplifier is configured to supply, at the output, first power at the first frequency and second power at the second frequency.

公开(公告)号：US20190148113A1

公开(公告)日：2019-05-16

申请号：US16138375

申请日：2018-09-21

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Peter L. G. Ventzek ,  Barton Lane

IPC: H01J37/32 ,  H01L21/67

Abstract: A system and method for using plasma to treat a substrate are described. The system includes a substrate holder disposed within a plasma processing system, and arranged to support a substrate, a first signal generator for coupling a first signal at a first frequency to plasma in the plasma processing system, and a second signal generator for coupling a second signal at a second frequency to plasma in the plasma processing system, wherein the second frequency being less than the first frequency. The system further includes an amplitude modulation circuit for modulating the first signal between a high amplitude state and a low amplitude state in response to an amplitude modulation signal, and a timing circuit configured to define the amplitude modulation signal that synchronizes the amplitude modulation of the first signal with a target phase for each cycle of the second signal.

公开(公告)号：US09934974B2

公开(公告)日：2018-04-03

申请号：US14309106

申请日：2014-06-19

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Merritt Funk ,  Lee Chen

IPC: C23C16/00 ,  C23F1/00 ,  H01L21/306 ,  H01L21/268 ,  H01J37/32

CPC classification number: H01L21/268 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32266

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

公开(公告)号：US20160218011A1

公开(公告)日：2016-07-28

申请号：US15006739

申请日：2016-01-26

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Merritt Funk

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32715 ,  H01J37/32733

Abstract: This disclosure relates to a plasma processing system and methods for high precision etching of microelectronic substrates. The system may include a plasma chamber that may generate plasma to remove monolayer(s) of the substrate. The plasma process may include a two-step process that uses a first plasma to form a thin adsorption layer on the surface of the microelectronic substrate. The adsorbed layer may be removed when the system transitions to a second plasma or moves the substrate to a different location within the first plasma that has a higher ion energy. In one specific embodiment, the transition between the first and second plasma may be enabled by changing the position of the substrate relative to the source electrode with no or relatively small changes in plasma process conditions.

Abstract translation: 本公开涉及等离子体处理系统和用于微电子基板的高精度蚀刻的方法。 该系统可以包括可以产生等离子体以去除衬底的单层的等离子体室。 等离子体工艺可以包括使用第一等离子体在微电子衬底的表面上形成薄吸附层的两步法。 当系统转变到第二等离子体或者将衬底移动到具有较高离子能量的第一等离子体内的不同位置时，可以去除吸附层。 在一个具体实施例中，可以通过在等离子体工艺条件下没有或相对较小的改变来改变衬底相对于源电极的位置来实现第一和第二等离子体之间的转变。

公开(公告)号：US20160212833A1

公开(公告)日：2016-07-21

申请号：US15082465

申请日：2016-03-28

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Radha Sundararajan

IPC: H05H1/46 ,  H01J37/32 ,  H01F41/06

CPC classification number: H05H1/46 ,  C23F1/00 ,  H01F41/06 ,  H01J37/321 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/3065 ,  Y10T29/49016

Abstract: A surface wave plasma (SWP) source couples microwave (MW) energy into a processing chamber through, for example, a radial line slot antenna, to result in a low mean electron energy (Te). An ICP source, is provided between the SWP source and the substrate and is energized at a low power, less than 100 watts for 300 mm wafers, for example, at about 25 watts. The ICP source couples energy through a peripheral electric dipole coil to reduce capacitive coupling.

Abstract translation: 表面波等离子体（SWP）源通过例如径向线缝隙天线将微波（MW）能量耦合到处理室中，以产生较低的平均电子能量（Te）。 ICP源设置在SWP源和衬底之间，并以低功率通电，对于300mm晶片，例如在约25瓦特，小于100瓦特。 ICP源通过外围电偶极线圈耦合能量以减少电容耦合。

公开(公告)号：US20140374025A1

公开(公告)日：2014-12-25

申请号：US14309106

申请日：2014-06-19

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Merritt Funk ,  Lee Chen

IPC: H01L21/67

CPC classification number: H01L21/268 ,  H01J37/32192 ,  H01J37/3222 ,  H01J37/32266

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electromagnetic energy may be conditioned prior to entering the interior cavity to improve uniformity or stability of the electric field. The conditioning may include, but is not limited to, phase angle, field angle, and number of feeds into the interior cavity.

公开(公告)号：US20140273485A1

公开(公告)日：2014-09-18

申请号：US14206518

申请日：2014-03-12

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Zhiying Chen

IPC: H01J37/32 ,  H01L21/3065 ,  H01L21/02

CPC classification number: H01J37/32009 ,  H01J37/3244 ,  H01J37/32532 ,  H01J37/32541 ,  H01J37/32568 ,  H01J37/32642 ,  H01J37/32697 ,  H01J37/32715 ,  H01L21/3065 ,  H01L21/67069

Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. In one embodiment, the plasma density may be controlled by reducing the rate of loss of ions to the chamber wall during processing. This may include biasing a dual electrode ring assembly in the plasma chamber to alter the potential difference between the chamber wall region and the bulk plasma region.

Abstract translation: 本公开涉及一种等离子体处理系统，用于控制正被处理的衬底的边缘或周边附近的等离子体密度。 等离子体处理系统可以包括等离子体室，其可以使用等离子体接收和处理衬底，用于蚀刻衬底，掺杂衬底或在衬底上沉积膜。 本公开涉及一种等离子体处理系统，用于控制正被处理的衬底的边缘或周边附近的等离子体密度。 在一个实施例中，等离子体密度可以通过在处理期间降低离子到室壁的离子速率来控制。 这可以包括偏置等离子体室中的双电极环组件以改变室壁区域和体积等离子体区域之间的电位差。

公开(公告)号：US20140265846A1

公开(公告)日：2014-09-18

申请号：US14209695

申请日：2014-03-13

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Radha Sundararajan ,  Merritt Funk

IPC: H01L21/263

CPC classification number: H01J37/32357 ,  H01J37/32422 ,  H01J37/32596

Abstract: A method of treating a substrate with plasma is described. In particular, the method includes disposing a substrate in a plasma processing system, disposing a hollow cathode plasma source including at least one hollow cathode within the plasma processing system, and disposing a grid between the cathode outlet of the plurality of hollow cathodes and the substrate. The method further includes electrically coupling the grid to electrical ground, coupling a voltage to the at least one hollow cathode relative to electrical ground, and generating plasma in hollow cathode by ion-induced secondary electron emission of energetic electrons that move along a first trajectory, and diffusing lower energy electrons along a second trajectory across a first region of the interior space between the cathode outlet and the grid, through the grid, and into a second region of the interior space in fluid contact with the substrate.

Abstract translation: 描述了用等离子体处理衬底的方法。 特别地，该方法包括在等离子体处理系统中设置衬底，在等离子体处理系统内设置包括至少一个中空阴极的中空阴极等离子体源，并且在多个中空阴极的阴极出口和衬底之间设置栅极 。 该方法还包括将电网电耦合到电接地，将电压相对于电接地耦合​​到至少一个空心阴极，以及通过离子诱导的沿着第一轨迹移动的能量电子的二次电子发射在空心阴极中产生等离子体， 并且沿着第二轨迹穿过阴极出口和格栅之间的内部空间的第一区域，穿过网格，并且进一步流体地与衬底接触的内部空间的第二区域中扩散较低能量的电子。

公开(公告)号：US20140262041A1

公开(公告)日：2014-09-18

申请号：US14204840

申请日：2014-03-11

Applicant: Tokyo Electron Limited

Inventor： Merritt Funk ,  Jianping Zhao ,  Lee Chen ,  Toshihiko Iwao ,  Toshihisa Nozawa ,  Zhiying Chen ,  Peter Ventzek

IPC: H01J37/32

CPC classification number: H01J37/32229 ,  H01J37/32211 ,  H01J37/32238 ,  H01L21/67017 ,  H01L21/67069

Abstract: A processing system is disclosed, having a power transmission element with an interior cavity that propagates electromagnetic energy proximate to a continuous slit in the interior cavity. The continuous slit forms an opening between the interior cavity and a substrate processing chamber. The electromagnetic energy may generate an alternating charge in the continuous slit that enables the generation of an electric field that may propagate into the processing chamber. The electric field may interact with process gas in the processing chamber to generate plasma for treating the substrate. The interior cavity may be isolated from the process chamber by a dielectric component that covers the continuous slit. The power transmission element may be used to control plasma density within the process chamber, either by itself or in combination with other plasma sources.

公开(公告)号：US20130224961A1

公开(公告)日：2013-08-29

申请号：US13842532

申请日：2013-03-15

Applicant: Tokyo Electron Limited

Inventor： Jianping Zhao ,  Lee Chen ,  Merritt Funk ,  Iwao Toshihiko ,  Peter L. G. Ventzek

IPC: H01L21/3065 ,  H01L21/67

CPC classification number: H01L21/3065 ,  H01J37/32192 ,  H01J37/32256 ,  H01J37/32311 ,  H01L21/67069

Abstract: A resonator system is provided with one or more resonant cavities configured to couple electromagnetic (EM) energy in a desired EM wave mode to plasma by generating resonant microwave energy in a resonant cavity adjacent the plasma. The resonator system can be coupled to a process chamber using one or more interface and isolation assemblies, and each resonant cavity can have a plurality of plasma tuning rods coupled thereto. The plasma tuning rods can be configured to couple the EM-energy from the resonant cavities to the process space within the process chamber.

Abstract translation: 谐振器系统设置有一个或多个谐振腔，其被配置为通过在与等离子体相邻的谐振腔中产生谐振微波能量将所期望的EM波模式中的电磁（EM）能量耦合到等离子体。 谐振器系统可以使用一个或多个接口和隔离组件耦合到处理室，并且每个谐振腔可以具有耦合到其上的多个等离子体调谐杆。 等离子体调谐杆可以被配置为将EM能量从谐振腔耦合到处理室内的处理空间。