公开(公告)号：US20180342618A1

公开(公告)日：2018-11-29

申请号：US15636632

申请日：2017-06-28

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Shao-Ping Chen ,  Huan-Chi Ma ,  Chien-Wen Yu ,  Kuo-Chin Hung

IPC: H01L29/78 ,  H01L21/768 ,  H01L23/522 ,  H01L29/45

CPC classification number: H01L29/7845 ,  H01L21/28518 ,  H01L21/76802 ,  H01L21/76843 ,  H01L21/76855 ,  H01L21/76864 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/5226 ,  H01L23/53209 ,  H01L29/41791 ,  H01L29/456 ,  H01L29/66795 ,  H01L29/785

Abstract: A method for forming a semiconductor device is disclosed. A p-type field-effect transistor (p-FET) is formed on a semiconductor substrate. A dielectric layer is formed on the semiconductor substrate and completely covers the p-FET. At least an opening is formed in the dielectric layer and exposes a source/drain region of the p-FET. A conductive material is then formed filling the opening, wherein the conductive material comprises a first stress; specifically, a tensile stress between 400 and 800 MPa