公开(公告)号：US20150214060A1

公开(公告)日：2015-07-30

申请号：US14680078

申请日：2015-04-07

Applicant: United Microelectronics Corp.

Inventor： Jian-Cun Ke ,  Chih-Wei Yang ,  Kun-Yuan Lo ,  Chia-Fu Hsu ,  Shao-Wei Wang

IPC: H01L21/28 ,  H01L29/66

CPC classification number: H01L21/28088 ,  H01L21/28185 ,  H01L21/28194 ,  H01L21/28202 ,  H01L21/823828 ,  H01L21/823857 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/518 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/6656 ,  H01L29/6659 ,  H01L29/7833 ,  H01L29/7834

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming an interfacial layer on the substrate; forming a high-k dielectric layer on the interfacial layer; forming a first bottom barrier metal (BBM) layer on the high-k dielectric layer; performing a thermal treatment; removing the first BBM layer; and forming a second BBM layer on the high-k dielectric layer.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供衬底; 在衬底上形成界面层; 在界面层上形成高k电介质层; 在高k电介质层上形成第一底部阻挡金属（BBM）层; 进行热处理; 去除第一个BBM层; 以及在所述高k电介质层上形成第二BBM层。