公开(公告)号：JP2000058920A

公开(公告)日：2000-02-25

申请号：JP21460299

申请日：1999-07-29

Applicant: XEROX CORP

Inventor： BOUR DAVID P

IPC: H01L21/203 ,  H01L33/00 ,  H01L33/32 ,  H01S5/00 ,  H01S5/323 ,  H01S5/343

Abstract: PROBLEM TO BE SOLVED: To eliminate structure deterioration due to alloy segregation, and to grow an active region with the large amount of indium with superior photoelectric characteristics, by providing a nucleation layer, a thick InGaN layer being allowed to grow on the nucleation layer, and an active layer being formed on the thick InGaN layer. SOLUTION: An LED 300 contains a single crystal substrate 305. Then, a buffer layer 310 being known as a nucleation layer is formed on the substrate 305. After that, a thick InGaN layer 320 is deposited on the buffer layer 310. An InGaN active layer 330 is deposited on the thick InGaN layer 320. A first III-V group nitride layer 340 is formed on the InGaN active layer 330, and a second III-V group nitride layer 350 is formed on the first III-V group nitride layer 340. After that, a p-electrode 360 is formed on the second III-V group nitride layer 350. During operation, a positive (forward) bias is applied to the part between the p-electrode 360 and an n-electrode 370.