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    2.
    发明专利
    未知

    公开(公告)号：BR0205192A

    公开(公告)日：2004-06-29

    申请号：BR0205192

    申请日：2002-12-19

    Applicant: XEROX CORP

    Inventor： BOUR DAVID P ,  KNEISSL MICHAEL A

    IPC: H01S5/042 ,  H01S5/32 ,  H01S5/323 ,  H01S5/343 ,  H01S5/06

    Abstract: Graded semiconductor layers (200,202) between GaN and AlGaN layers (118,120) in a nitride based semiconductor laser structure reduce the threshold voltage of the laser structure by reducing the electric potential barrier at the interface between the GaN and AlGaN layers. The graded layers can be step graded, continuous graded or digital graded.

    3.
    发明专利
    未知

    公开(公告)号：DE69515428T2

    公开(公告)日：2000-07-06

    申请号：DE69515428

    申请日：1995-11-28

    Applicant: XEROX CORP

    Inventor： BOUR DAVID P ,  THORNTON ROBERT L

    IPC: H01S5/00 ,  H01S5/20 ,  H01S5/32 ,  H01S5/327 ,  H01S5/34 ,  H01S5/343

    Abstract: The laser includes a substrate, an N doped cladding layer adjacent the substrate, and two confining layers with an active layer between them. One of the confining layers is adjacent the N doped cladding layer. Also provided are a p-doped cladding layer, e.g. of AlGaAs, and a tunnel barrier layer having an indirect bandgap energy value and a direct bandgap energy value associated with it. The P doped cladding layer is adjacent the second confining layer and it has a bandclap energy value associated with it. The indirect bandgap energy value of the tunnel barrier layer is less than the direct bandclap energy value and equal to or less than the bandgap energy value of the P doped cladding layer. The barrier layer is disposed between the second confining layer and the P doped cladding layer and is thin enough such that electrons in the active region are prevented from entering the P doped cladding layer.

    4.
    发明专利
    未知

    公开(公告)号：DE69515428D1

    公开(公告)日：2000-04-13

    申请号：DE69515428

    申请日：1995-11-28

    Applicant: XEROX CORP

    Inventor： BOUR DAVID P ,  THORNTON ROBERT L

    IPC: H01S5/00 ,  H01S5/20 ,  H01S5/32 ,  H01S5/327 ,  H01S5/34 ,  H01S5/343

    Abstract: The laser includes a substrate, an N doped cladding layer adjacent the substrate, and two confining layers with an active layer between them. One of the confining layers is adjacent the N doped cladding layer. Also provided are a p-doped cladding layer, e.g. of AlGaAs, and a tunnel barrier layer having an indirect bandgap energy value and a direct bandgap energy value associated with it. The P doped cladding layer is adjacent the second confining layer and it has a bandclap energy value associated with it. The indirect bandgap energy value of the tunnel barrier layer is less than the direct bandclap energy value and equal to or less than the bandgap energy value of the P doped cladding layer. The barrier layer is disposed between the second confining layer and the P doped cladding layer and is thin enough such that electrons in the active region are prevented from entering the P doped cladding layer.

    5.
    发明专利
    未知

    公开(公告)号：DE60025407T2

    公开(公告)日：2006-07-27

    申请号：DE60025407

    申请日：2000-04-07

    Applicant: XEROX CORP

    Inventor： VAN DE WALLE CHRISTIAN G ,  BOUR DAVID P ,  KNEISSL MICHAEL A ,  ROMANO LINDA T

    IPC: H01S5/20 ,  H01S5/30 ,  H01S5/323 ,  H01S5/343

    Abstract: An asymmetric waveguide nitride laser diode structure and a method of fabricating the same is provided. The asymmetric laser diode structure comprises an active layer having a first and a second surface, a transition layer in contact with the first surface of the active layer, a p-cladding layer disposed adjacent to the transition layer, and an n-type layer in contact with the second surface of the active layer.

    7.
    发明专利
    未知

    公开(公告)号：BR0205196A

    公开(公告)日：2004-06-29

    申请号：BR0205196

    申请日：2002-12-19

    Applicant: XEROX CORP

    Inventor： CHUA CHRISTOPHER L ,  KNEISSL MICHEAEL A ,  BOUR DAVID P

    IPC: H01L33/00 ,  H01L33/10 ,  H01L33/46 ,  H01S5/183 ,  H01S5/323 ,  H01S5/343 ,  H01L21/10

    Abstract: A method is provided for fabricating a nitride based resonant cavity semiconductor structure with a first distributed Bragg reflector (122) on a sapphire substrate (100), a second substrate (128) bonded to the first distributed Bragg reflector (122), the sapphire substrate (100) removed by laser-assisted epitaxial lift-off, and fabricating a second Bragg reflector (142) on the semiconductor structure opposite the first distributed Bragg reflector. The nitride based resonant cavity semiconductor structure can be a VCSEL, LED or photodetector, or a combination of said devices.

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