Abstract:
An apparatus (100), and method (600) therefor, relate generally to broadband IQ generation. In this apparatus (100), related generally to broadband in-phase and quadrature phase ("IQ") generation, a divider circuit (132) and a polyphase filter circuit (130) are configured for receiving an oscillator output (123). The polyphase filter circuit (130) is configured for polyphase filtering the oscillator output (123) into a first quadrature output (136). The divider circuit (132) is configured for dividing the oscillator output (123) into a second quadrature output (135). A multiplexer circuit (137) is coupled to the divider circuit (132) and the polyphase filter circuit (130) and configured for selecting either the first quadrature output (1 36) or the second quadrature output (135) as an IQ output (139) based on a bandwidth of the oscillator output (123).
Abstract:
In an example, a phase-locked loop (PLL) circuit (108) includes an error detector (202) operable to generate an error signal; an oscillator (204) operable to provide an output signal having an output frequency based on the error signal and a frequency band select signal, the output frequency being a frequency multiplier times a reference frequency; a frequency divider (208) operable to divide the output frequency of the output signal to generate a feedback signal based on a divider control signal; a sigma-delta modulator (SDM) (209) operable to generate the divider control signal based on inputs indicative of an integer value and a fractional value of the frequency multiplier, the SDM responsive to an order select signal operable to select an order of the SDM; and a state machine (214) operable to, in an acquisition state, generate the frequency band select signal and set the order of the SDM.
Abstract:
Voltage-controlled oscillation (100) is described. In an apparatus therefor, an inductor (120) has a tap and has or is coupled to a positive-side output node (105) and a negative side output node (106). The tap is coupled to receive a first current. A coarse grain capacitor array (130) is coupled to the positive-side output node (105) and the negative side output node (106) and is coupled to respectively receive select signals (168). A varactor (140) is coupled to the positive-side output node (105) and the negative side output node (106) and is coupled to receive a control voltage (143). The varactor (140) includes MuGFETs (141, 142). A transconductance cell (150) is coupled to the positive- side output node (105) and the negative side output node (106), and the transconductance cell (150) has a common node (107). A frequency scaled resistor network (160) is coupled to the common node (107) and is coupled to receive the select signals (168) for a resistance for a path for a second current.
Abstract:
An interdigitated capacitor having digits of varying width is disclosed. One embodiment of a capacitor (100) includes a first plurality of conductive digits (110) and a second plurality of conductive digits (110) positioned in an interlocking manner with the first plurality of conductive digits (110), such that an interdigitated structure is formed. The first plurality of conductive digits (110) and the second plurality of conductive digits (110) collectively form a set of digits, where the width of a first digit in the set of digits (110) is non-uniform with respect to a second digit in the set of digits.
Abstract:
A symmetrical inductor includes pairs of half-loops (e.g., 312, 314, 316, 318), first and second terminal electrodes (e.g., 302, 304), and a center-tap electrode (e.g., 310). The half-loop pairs are in respective conductive layers (e.g., 101, 201 ) of an integrated circuit. Each half-loop pair includes a first (e.g., 312, 316) and second half-loop (e.g., 314, 318) in the respective conductive layer. The first and second terminal electrodes are in a first conductive layer, and the center-tap electrode is in a second conductive layer. The first terminal electrode and the center-tap electrode are coupled through a first series combination that includes the first half-loop of each half-loop pair. The second terminal electrode and the center-tap electrode are coupled through a second series combination that includes the second half-loop of each half-loop pair.
Abstract:
A package device comprises a first transceiver (110) comprising a first integrated circuit (IC) die and transmitter circuitry (112), and a second transceiver (120) comprising a second IC die and receiver circuitry (124). The receiver circuitry is coupled to the transmitter circuitry via a channel (140). The package device further comprises an interconnection device (130) connected to the first IC die and the second IC die. The interconnection device comprises the channel (140) connecting the transmitter circuitry with the receiver circuitry, and a passive inductive element (142) disposed external to the first IC die and the second IC die and along the channel.
Abstract:
A circuit arrangement for calibrating a circuit in an integrated circuit device is described. The circuit arrangement may comprise a main circuit (1102) configured to receive input data at a first input (1106) and generate output data at a first output (1108), wherein the output data is based upon the input data and a function of the main circuit; a replica circuit (1104) configured to receive calibration data at a second input (1114) and generate calibration output data, based upon the calibration data, at a second output (1118), wherein the replica circuit provides a replica function of the function of the main circuit; and a calibration circuit (1120) configured to receive the output data from the main circuit during a foreground calibration mode, and the calibration output data from the replica circuit during a background calibration mode; wherein the calibration circuit provides control signals to the main circuit during the background calibration mode. A method of calibrating a circuit in an integrated circuit device is also described.
Abstract:
Methods and apparatus relate to a bidirectional differential interface (300) having a voltage-mode transmit driver architecture (325) formed of multiple selectively enabled slices for coarse output resistance impedance matching. In examples, the transmit driver (325) may include a programmable resistance (340) for fine-tuning to impedance match the output resistance for transmit operation. During receive operation, protective voltage may be proactively applied to gates of drive transistors to minimize voltage stresses applied by external signal sources. Some implementations may automatically float the sources of the drive transistors to prevent back-feeding externally driven signal currents during receive mode operations. The transmit driver (325) may have programmable voltage swing on, for example, the upper and/or lower bounds to enhance compatibility. A programmable common mode voltage node may be selectively applied in a termination network (335), for example, through common mode resistors for receive mode operations.
Abstract:
Examples herein describe techniques for isolating portions of an IC (100) that include sensitive components (e.g., inductors or capacitors) from return current (330) in a grounding plane (415). An output current generated by a transmitter (105) or driver in an IC can generate a magnetic field (405) which induces return current in the grounding plane. If the return current is proximate the sensitive components (305), the return current can inject noise which can negatively impact other components in the IC. To isolate the sensitive components from the return current, embodiments herein include forming slots (500) through the grounding structure which includes the grounding plane on one or more sides of the sensitive components.
Abstract:
A semiconductor device (300) includes an interconnect structure (306) disposed over a semiconductor substrate ( 302). The interconnect structure includes a first device (330) disposed in a first portion (306-1 ) of the interconnect structure. A first shielding plane (402) including a first conductive material is disposed in a second portion (306-2) of the interconnect structure over the first portion of the interconnect structure. A second device (504) is disposed in a third portion (306-3) of the interconnect structure over the second portion of the interconnect structure. An isolation wall (320) including a second conductive material is disposed in the first, second, and third portions of the interconnect structure. The isolation wall is coupled to the first shielding plane, and surrounds the first device, the first shielding plane, and the second device.