公开(公告)号：WO2003041133A2

公开(公告)日：2003-05-15

申请号：PCT/US2002/036009

申请日：2002-11-08

Applicant: CONVENTOR, INCORPORATED ,  CUNNINGHAM, Shawn,J.

Inventor： CUNNINGHAM, Shawn,J.

IPC: H01L21/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: Electrothermal Self-Latching MEMS Switch and Method. According to one embodiment, a microscale switch having a movable microcomponent is provided and includes a substrate having a stationary contact. The switch can also include a structural layer having a movable contact positioned for contacting the stationary contact when the structural layer moves toward the substrate. An electrothermal latch attached to the structural layer and having electrical communication with the movable contact to provide current flow between the electrothermal latch and the stationary contact when the movable contact contacts the stationary contact for maintaining' the movable contact in contact with the stationary contact.

Abstract translation: 电热自锁式MEMS开关及方法。 根据一个实施例，提供具有可移动微组件的微型开关，并且包括具有固定触点的基板。 开关还可以包括具有可移动触点的结构层，该结构层定位成当结构层向基板移动时接触固定触点。 电动闩锁附接到结构层，并且当可动触头接触固定触点以保持“可动触头与固定触点接触”时，与可动触点电连通以提供电热闩和固定触点之间的电流。

公开(公告)号：JP2011500341A

公开(公告)日：2011-01-06

申请号：JP2010529377

申请日：2008-10-15

Applicant: エプコス アクチエンゲゼルシャフトEpcos Ag

Inventor： コステル、ロナルド ,  アンネ ジルストラ、ピエベ ,  シャイク、ロベルタス テー．エフ． ファン ,  ダイク、ピエテル シモン ファン

IPC: B81C1/00 ,  H01G5/16

CPC classification number: B81C1/0015 ,  B81B2203/0307 ,  B81B2203/0315 ,  B81C2201/0107 ,  H01G5/16 ,  H01G13/00

Abstract: Method for manufacturing a capacitor on a substrate, the capacitor including a first electrode (5) and a second electrode (12; 25), the first and second electrodes being separated by a cavity (16; 32), the substrate including an insulating surface layer (3), the first electrode (5) being arranged on the insulating surface layer a first metal body (7a; 20) being adjacent to the first electrode and arranged as anchor of the second electrode (12; 25) the second electrode being arranged as a beam-shaped body (12; 25) located on the first metal body and above the first electrode; the cavity (16; 32) being laterally demarcated by a sidewall of the first metal body.

公开(公告)号：JP2004001186A

公开(公告)日：2004-01-08

申请号：JP2003063075

申请日：2003-03-10

Applicant: Samsung Electronics Co Ltd ,  三星電子株式会社

Inventor： LEE EUN-SUNG ,  KIM CHUNG-WOO ,  SO INSO ,  KIM JONG-SEOK ,  LEE MOON-CHUL

IPC: B81B3/00 ,  B81C1/00 ,  H01H11/04 ,  H01H59/00

CPC classification number: B81B3/0078 ,  B81B2201/014 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2203/04 ,  B81C2201/0107 ,  B81C2201/014 ,  H01H59/0009

Abstract: PROBLEM TO BE SOLVED: To provide an electrostatic driving type MEMS element on which a driving electrode has an imbedding structure and its manufacturing method.
SOLUTION: The driving electrode 320 is formed on a substrate 310 and an insulating layer 330 is further formed on the driving electrode 320 under the manufacturing method for the MEMS element. The insulating layer 330 is etched by patterning in a region where a fixing part and a contact part are formed, and a metal layer 340 is formed on it. The metal layer 340 is flattened by polishing until the insulating layer 330 is exposed. At this time, the driving electrode 320 remains as it is imbedded in the insulating layer 330. Thereafter a sacrifice layer 350 is formed on that and, a region of the sacrifice layer 350 where a fixing part is formed is made into a grouping type space by etching, and the MEMS structure layer 350 is laminated on the remaining sacrifice layer 350.
COPYRIGHT: (C)2004,JPO

公开(公告)号：KR1020020028569A

公开(公告)日：2002-04-17

申请号：KR1020000059629

申请日：2000-10-10

Applicant: (주)해라시스템

Inventor： 이용근

IPC: B81B5/00

CPC classification number: B81B5/00 ,  B81C1/00166 ,  B81C1/00476 ,  B81C2201/0107

Abstract: PURPOSE: An optical modulator and method for manufacturing optical modulator is provided to increase rotational displacement by using a low voltage, while eliminating the problem of adherence between upper and lower layers during removal of sacrificial layer. CONSTITUTION: An optical modulator comprises a lower electrode(11) formed onto a transparent substrate(10); a first movable electrode(12) spaced apart from the lower electrode in a vertical direction; a first lower support beam(15) for supporting the first movable electrode; a second movable electrode(13) spaced apart from the first movable electrode; and a second lower support beam(16) for supporting the second movable electrode. A method comprises a first step of forming an insulating film onto a substrate; a second step of forming a lower electrode by forming a first conductive layer onto the insulating film; a third step of forming a first sacrificial layer onto the substrate including the lower electrode; a fourth step of etching the first sacrificial layer and forming a second conductive layer; a fifth step of forming a first movable electrode by etching the second conductive layer; a sixth step of forming a second sacrificial layer onto the substrate including the second conductive layer; a seventh step of etching the second sacrificial layer and forming a conductive layer; an eighth step of forming a second movable electrode by etching the conductive layer; and a ninth step of removing first and second sacrificial layers.

Abstract translation: 目的：提供用于制造光学调制器的光学调制器和方法，以通过使用低电压来增加旋转位移，同时消除去除牺牲层期间上层和下层之间的粘附问题。 构成：光调制器包括形成在透明基板（10）上的下电极（11）。 与下电极在垂直方向上隔开的第一可动电极（12）; 用于支撑所述第一可动电极的第一下支撑梁（15）; 与所述第一可动电极间隔开的第二可动电极; 和用于支撑第二可动电极的第二下支撑梁（16）。 一种方法包括在衬底上形成绝缘膜的第一步骤; 通过在绝缘膜上形成第一导电层形成下电极的第二步骤; 在包括所述下电极的所述基板上形成第一牺牲层的第三步骤; 蚀刻所述第一牺牲层并形成第二导电层的第四步骤; 通过蚀刻第二导电层形成第一可动电极的第五步骤; 在包括第二导电层的基板上形成第二牺牲层的第六步骤; 蚀刻第二牺牲层并形成导电层的第七步骤; 通过蚀刻所述导电层形成第二可动电极的第八步骤; 以及去除第一和第二牺牲层的第九步骤。

公开(公告)号：KR1020110014709A

公开(公告)日：2011-02-11

申请号：KR1020117000008

申请日：2009-06-03

Applicant: 퀄컴 엠이엠에스 테크놀로지스, 인크.

Inventor： 웹스터,제임스,랜돌프 ,  투,탄,응이아 ,  얀,시아오밍 ,  정,원석

IPC: B81C1/00 ,  B81B3/00

CPC classification number: B81B3/0008 ,  B81B2201/042 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/115 ,  G02B26/001 ,  Y10T428/24917

Abstract: 전자기계시스템 장치의 이동식 구성요소의 영구 부착성 혹은 정지마찰을 경감시키는 해당 전자기계시스템 장치의 제조방법이 제공된다. 상기 방법은 개선되고 재현가능한 표면 조도를 지니는 비정질 실리콘 희생층을 제공한다. 상기 비정질 실리콘 희생층은 상기 전자기계시스템 장치에 이용되는 통상의 재료에 대한 우수한 부착성을 더욱 발휘한다.

公开(公告)号：WO2014007991A1

公开(公告)日：2014-01-09

申请号：PCT/US2013/046588

申请日：2013-06-19

Applicant: QUALCOMM MEMS TECHNOLOGIES, INC.

Inventor： GIRI, Sandeep K.

IPC: B81B3/00

CPC classification number: B81B3/0005 ,  B81B3/001 ,  B81B2201/042 ,  B81C2201/0107

Abstract: This disclosure provides systems, methods and apparatus for electromechanical systems devices with improved electrical properties and device life span. In one aspect, a conformal antistiction layer is formed within a cavity of an electromechanical systems apparatus over a roughened surface. The conformal antistiction layer can include a dielectric layer. The conformal antistiction layer can include a self-assembled monolayer (SAM) formed over the dielectric layer. The conformal antistiction layer can replicate the roughness of the surface that it is deposited on.

Abstract translation: 本公开提供了具有改善的电气性能和设备寿命的机电系统装置的系统，方法和装置。 在一个方面，在机电系统装置的空腔内在粗糙表面上形成共形抗静电层。 保形抗静电层可以包括介电层。 共形抗静电层可以包括在电介质层上形成的自组装单层（SAM）。 共形抗静电层可以复制其沉积的表面的粗糙度。

公开(公告)号：WO2007100457A3

公开(公告)日：2007-12-27

申请号：PCT/US2007003267

申请日：2007-02-07

Applicant: QUALCOMM INC ,  CHOU CHEN-JEAN ,  WU CHUN-CHEN ,  BRINKLEY PATRICK F

Inventor： CHOU CHEN-JEAN ,  WU CHUN-CHEN ,  BRINKLEY PATRICK F

IPC: B81C1/00 ,  B81C99/00 ,  G02B26/00 ,  H04Q11/00

CPC classification number: B81C99/004 ,  B81B2201/047 ,  B81C1/00714 ,  B81C2201/0107 ,  G02B26/001

Abstract: A method of fabricating a MEMS device includes conditioning of an insulating layer by applying a voltage across the insulating layer via a conductive sacrificial layer for a period of time, prior to removal of the conductive sacrificial layer. This conditioning process may be used to saturate or stabilize charge accumulated within the insulating layer. The resistance across the insulating layer may also be measured to detect possible defects in the insulating layer.

Abstract translation: 制造MEMS器件的方法包括通过在去除导电牺牲层之前通过导电牺牲层在绝缘层上施加电压一段时间来调节绝缘层。 该调理过程可以用于使积聚在绝缘层中的电荷饱和或稳定。 还可以测量绝缘层两端的电阻，以检测绝缘层中的可能缺陷。

公开(公告)号：WO2004087561A2

公开(公告)日：2004-10-14

申请号：PCT/US2004/009222

申请日：2004-03-24

Applicant: REFLECTIVITY, INC. ,  PATEL, Satyadev, R. ,  DOAN, Jonathan

Inventor： PATEL, Satyadev, R. ,  DOAN, Jonathan

IPC: B81B

CPC classification number: B81C1/00476 ,  B81B2201/042 ,  B81C2201/0107

Abstract: A sacrificial layer and a method for applying said sacrificial layer in fabricating microelectromechanical devices are disclosed herein. The sacrificial layer comprises an early transition metal. Specifically, the sacrificial layer comprises an early transition metal element, an early transition metal alloy or an early transition metal silicide.

Abstract translation: 本文公开了牺牲层和在制造微机电装置中施加所述牺牲层的方法。 牺牲层包括早期过渡金属。 具体地，牺牲层包括早期过渡金属元素，早期过渡金属合金或早期过渡金属硅化物。

公开(公告)号：WO2003040338A2

公开(公告)日：2003-05-15

申请号：PCT/US2002/035988

申请日：2002-11-08

Applicant: COVENTOR, INCORPORATED ,  SETT, Subham ,  CUNNINGHAM, Shawn, J.

Inventor： SETT, Subham ,  CUNNINGHAM, Shawn, J.

IPC: C12N

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: A micro-scale interconnect device with internal heat spreader and method for fabricating same. The device includes first and second arrays of generally coplanar electrical communication lines. The first array is disposed generally along a first plane, and the second array is disposed generally along a second plane spaced from the first plane. The arrays are electrically isolated from each other. Embedded within the interconnect device is a heat spreader element. The heat spreader element comprises a dielectric material disposed in thermal contact with at least one of the arrays and a layer of thermally conductive material embedded in the dielectric material. The device is fabricated by forming layers of electrically conductive, dielectric, and thermally conductive materials on a substrate. The layers are arranged to enable heat energy given off by current-carrying communciation lines to be transferred away from the communciation lines.

Abstract translation: 具有内部散热器的微尺寸互连装置及其制造方法。 该装置包括大致共面电通信线路的第一和第二阵列。 第一阵列大致沿着第一平面布置，并且第二阵列通常沿着与第一平面间隔开的第二平面设置。 阵列彼此电隔离。 嵌入在互连装置内的是散热器元件。 散热器元件包括设置成与阵列中的至少一个热交换的介电材料和嵌入电介质材料中的导热材料层。 该器件通过在衬底上形成导电的，介电的和导热的材料层来制造。 这些层被布置成使得由载流通信线发出的热能被转移离开通信线。

公开(公告)号：JP2014535062A

公开(公告)日：2014-12-25

申请号：JP2014529760

申请日：2012-08-27

Applicant: クォルコム・メムズ・テクノロジーズ・インコーポレーテッド

Inventor： フィリップ・ジェーソン・ステファノー ,  アナ・ランゲロヴァ・ロンダーガン ,  エヴゲニー・ペトロヴィッチ・グーセフ ,  ラヴィンドラ・ヴァマン・シェノイ

IPC: G02B26/02 ,  B81C1/00 ,  C23F1/44 ,  C25D5/10 ,  C25D7/00 ,  C25D21/12

CPC classification number: B81C1/0038 ,  B81B2203/0392 ,  B81C2201/0107 ,  B81C2201/0188 ,  B81C2201/038 ,  C23C18/1653 ,  C25D5/10 ,  C25D5/18 ,  C25D5/48 ,  C25D7/00 ,  Y10T428/12493 ,  Y10T428/24612

Abstract: 本開示は、高表面積の積層金属構造、デバイス、装置、システム、および関連方法の実施形態を提供する。基板上の複数の積層が、第1の金属と第2の金属とを含むめっき漕から製造され得る。調節されためっき電流が、交互の第1の金属層と合金層とを堆積させ得、合金層は、第1の金属と第2の金属とを含む。合金層間のギャップが、第1の金属層の一部分を選択的にエッチングすることによって形成され得、積層構造を画定する。積層構造は、キャパシタ、インダクタ、触媒反応器、伝熱管、非線形ばね、フィルタ、バッテリ、および重金属清浄器を形成するアプリケーションにおいて有用であり得る。

Abstract translation: 本发明中，具有高表面积的叠层金属结构，该设备提供了一种装置，系统和相关方法的实施例。 多个层叠基板的可以从包含第一金属和第二金属的镀浴来制备。 调节的电镀电流是通过与第一金属层和合金层沉积交替获得，该合金层包括第一金属和第二金属。 合金层的间隙，通过选择性地蚀刻所述第一金属层的一部分，以限定的层叠结构形成。 分层结构可以是有用的电容器，电感器，催化反应器，传热管，非线性弹簧，在形成电池的应用的过滤器，和重金属净化器。