公开(公告)号：EP2438411A1

公开(公告)日：2012-04-11

申请号：EP10780112.8

申请日：2010-05-28

Applicant: Teknologian Tutkimuskeskus VTT

Inventor： BLOMBERG, Martti

IPC: G01J3/26 ,  G02B5/28

CPC classification number: G02B26/001 ,  B81B3/0013 ,  B81B2201/042 ,  B81C2201/115 ,  G01J3/26

Abstract: The invention relates to controllable Fabry-Perot interferometers which are produced with micromechanical (MEMS) technology. Producing prior art interferometers includes a risk of deterioration of mirrors during the etching of the sacrificial layer (123). According to the solution according to the invention at least one layer (103, 105, 114, 116) of the mirrors is made of silicon-rich silicon nitride. In the inventive Fabry-Perot interferometer it is possible to avoid or reduce using silicon oxide in the mirror layers whereby the risk of deterioration of the mirrors is reduced. It is also possible to use mirror surfaces with higher roughness, whereby the risk of the mirrors sticking to each other is reduced.

公开(公告)号：EP1963227A1

公开(公告)日：2008-09-03

申请号：EP06841275.8

申请日：2006-11-29

Applicant: ROBERT BOSCH GMBH

Inventor： KAELBERER, Arnd ,  FREY, Jens

IPC: B81B7/00

CPC classification number: B81C1/00984 ,  B81B3/001 ,  B81C2201/115 ,  Y10T428/24355

Abstract: The invention relates to a micromechanical component comprising a substrate (1), a first intermediate layer (2) that is disposed thereupon, and a first layer (3) which is arranged thereupon and is structured down to the first intermediate layer (2). A second intermediate layer (6) is placed on top of the first layer (3) while a second layer (9) into which at least one movable micromechanical structure (14) is structured is positioned on the second intermediate layer (6). The second intermediate layer (6) is removed in a sacrificial zone below the movable micromechanical structure (14) while the first intermediate layer (2) is removed in part in zones below the first layer (3). The invention is characterized in that the movable micromechanical structure (14) is provided with at least one stop area on a bottom face. Said stop area can be rested against a zone of the first layer (3) which is supported by the first intermediate layer (2) by deflecting the movable micromechanical structure (14). The invention further relates to a method for producing such a micromechanical component.

公开(公告)号：EP1641709B1

公开(公告)日：2007-04-11

申请号：EP04767542.6

申请日：2004-07-01

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： GRANGE, Hubert ,  DIEM, Bernard ,  VIOLLET, Bosson, Yylvie ,  BOREL, Michel

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/001 ,  B81C2201/115

Abstract: The invention concerns a method wherein a useful layer (1) is initially connected by a sacrificial layer (2) to a layer (3) constituting a substrate. Prior to etching of the sacrificial layer (2), at least part of the surface (4, 5) of at least one of the layers in contact with the sacrificial layer (2) is doped. After etching of the sacrificial layer (2), the surface (4, 5) is superficially etched, so as to increase the roughness of its doped part. Prior to doping, a mask (9) is deposited on part of the useful layer (1) so as to delimit a doped region and a non-doped region of the surface (4, 5), one of the regions constituting a stop after the surface etching phase.

公开(公告)号：EP2973657A4

公开(公告)日：2016-09-28

申请号：EP14779860

申请日：2014-02-28

Applicant: INVENSENSE INC

Inventor： WILLIAMS KIRT REED ,  HUANG KEGANG ,  XU WENCHENG ,  SHIN JONGWOO ,  LIM MARTIN

IPC: H01L21/00

CPC classification number: B81B3/001 ,  B81C2201/115

Abstract: In an integrated MEMS device, moving silicon parts with smooth surfaces can stick together if they come into contact. By roughening at least one smooth surface, the effective area of contact, and therefore surface adhesion energy, is reduced and hence the sticking force is reduced. The roughening of a surface can be provided by etching the smooth surfaces in gas, plasma, or liquid with locally non-uniform etch rate. Various etch chemistries and conditions lead to various surface roughness.

Abstract translation: 在集成MEMS器件中，移动具有光滑表面的硅部件如果接触则可以粘在一起。 通过使至少一个光滑表面粗糙化，有效的接触面积以及因此的表面附着能减少，因此粘附力降低。 可以通过以局部不均匀的蚀刻速率蚀刻气体，等离子体或液体中的光滑表面来提供表面的粗糙化。 各种蚀刻化学和条件导致各种表面粗糙度。

公开(公告)号：EP1398811B1

公开(公告)日：2011-08-10

申请号：EP03020159.4

申请日：2003-09-05

Applicant: IMEC

Inventor： Rottenberg, Xavier ,  Jansen, Henri ,  Tilmans, Hendrikus ,  De Raedt, Walter

IPC: H01H59/00

CPC classification number: H01H59/0009 ,  B81B3/001 ,  B81B2201/016 ,  B81C2201/115 ,  H01G5/16 ,  H01G5/18

公开(公告)号：EP1641709A2

公开(公告)日：2006-04-05

申请号：EP04767542.6

申请日：2004-07-01

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： GRANGE, Hubert ,  DIEM, Bernard ,  VIOLLET, Bosson, Yylvie ,  BOREL, Michel

IPC: B81B3/00 ,  B81C1/00

CPC classification number: B81B3/001 ,  B81C2201/115

Abstract: The invention concerns a method wherein a useful layer (1) is initially connected by a sacrificial layer (2) to a layer (3) constituting a substrate. Prior to etching of the sacrificial layer (2), at least part of the surface (4, 5) of at least one of the layers in contact with the sacrificial layer (2) is doped. After etching of the sacrificial layer (2), the surface (4, 5) is superficially etched, so as to increase the roughness of its doped part. Prior to doping, a mask (9) is deposited on part of the useful layer (1) so as to delimit a doped region and a non-doped region of the surface (4, 5), one of the regions constituting a stop after the surface etching phase.

公开(公告)号：EP1398811A3

公开(公告)日：2005-10-05

申请号：EP03020159.4

申请日：2003-09-05

Applicant: INTERUNIVERSITAIR MICROELEKTRONICA CENTRUM VZW

Inventor： Rottenberg, Xavier ,  Jansen, Henri ,  Tilmans, Hendrikus ,  De Raedt, Walter

IPC: H01H59/00

CPC classification number: H01H59/0009 ,  B81B3/001 ,  B81B2201/016 ,  B81C2201/115 ,  H01G5/16 ,  H01G5/18

Abstract: A micro electromechanical switchable capacitor is disclosed, comprising a substrate, a bottom electrode, a dielectric layer deposited on at least part of said bottom electrode, a conductive floating electrode deposited on at least part of said dielectric layer, an armature positioned proximate to the floating electrode and a first actuation area in order to stabilize the down state position of the armature. The device may furthermore comprise a second actuation area. The present invention provides shunt switches and series switches with actuation in zones attached to the floating electrode area or with relay actuation.

公开(公告)号：JP2012528345A

公开(公告)日：2012-11-12

申请号：JP2012512412

申请日：2010-05-28

Applicant: テクノロジアン タトキマスケスクス ヴィーティーティー

Inventor： ブルームバーグ，マルッティ

IPC: G02B26/00 ,  G01B9/02

CPC classification number: G02B26/001 ,  B81B3/0013 ,  B81B2201/042 ,  B81C2201/115 ,  G01J3/26

Abstract: 本発明は、制御可能なファブリ・ペロー干渉計に関し、この干渉計は微小機械（ＭＥＭＳ）技術によって製造される。 従来技術の干渉計の製造は、犠牲層（１２３）のエッチングの間のミラーの劣化のリスクを含む。 本発明による解決法に従えば、ミラーの少なくとも１つの層（１０３、１０５、１１４、１１６）は、ケイ素リッチな窒化ケイ素から成る。 この発明的なファブリ・ペロー干渉計においては、ミラー層における酸化ケイ素の使用を回避または減少させることが可能であり、それによりミラーの劣化のリスクが減少する。 また、高い粗さのミラー表面を使用することも可能であり、それによりミラーが互いに貼り付いてしまうというリスクが減少する。
【選択図】図１

公开(公告)号：JP2011525861A

公开(公告)日：2011-09-29

申请号：JP2011512625

申请日：2009-06-03

Applicant: クォルコム・メムズ・テクノロジーズ・インコーポレーテッド

Inventor： ウォン・スク・チュン ,  ジェイムズ・ランドルフ・ウェブスター ,  シャオミン・ヤン ,  タン・ギア・ツ

IPC: B81C1/00 ,  G02B26/02

CPC classification number: B81B3/0008 ,  B81B2201/042 ,  B81C2201/0107 ,  B81C2201/0109 ,  B81C2201/115 ,  G02B26/001 ,  Y10T428/24917

Abstract: Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.

公开(公告)号：EP2973657A1

公开(公告)日：2016-01-20

申请号：EP14779860.7

申请日：2014-02-28

Applicant: InvenSense, Inc.

Inventor： WILLIAMS, Kirt, Reed ,  HUANG, Kegang ,  XU, Wencheng ,  SHIN, Jongwoo ,  LIM, Martin

IPC: H01L21/00

CPC classification number: B81B3/001 ,  B81C2201/115

Abstract: In an integrated MEMS device, moving silicon parts with smooth surfaces can stick together if they come into contact. By roughening at least one smooth surface, the effective area of contact, and therefore surface adhesion energy, is reduced and hence the sticking force is reduced. The roughening of a surface can be provided by etching the smooth surfaces in gas, plasma, or liquid with locally non-uniform etch rate. Various etch chemistries and conditions lead to various surface roughness.