公开(公告)号：WO1997041554A1

公开(公告)日：1997-11-06

申请号：PCT/GB1997000498

申请日：1997-02-24

Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IBM UNITED KINGDOM LIMITED

Inventor： INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IBM UNITED KINGDOM LIMITED ,  ERPELDING, David ,  PATTANAIK, Surya ,  SIMMONS, Randall, George

IPC: G11B05/39

CPC classification number: G11B5/4853 ,  G11B5/40 ,  H05K1/0254 ,  H05K1/0293

Abstract: MR heads (22) having MR sensors (24) are protected against damage caused by electrostatic discharge or the presence of electrostatically charged fields. A shunt (40, 54) is provided across the adjacent conductive leads (18, 19) or traces to the MR sensor (24) at a point that is immediately adjacent their determination on the MR head (22). A solder bridge may be used for the shunt (40, 54). The solder shunt (40, 54) is removed prior to putting the integrated suspension (10) on which the MR head (22) is mounted into operation in a magnetic disk drive system (1). The solder shunt (40, 54) is removed by reflowing the solder and drawing the reflowed solder away from the leads (18, 19) to break electrical connection of the shunt (40, 54) across the adjacent leads (18, 19) to the MR sensor (24). To facilitate removing the shunt (40, 54) by reflowing the solder, at least one solder lobe (30, 31, 50) of a chosen geometry is placed adjacent a lead (18, 19). This lobe includes a confining lobe (32) which serves to confine the solder inthe shunt region when the shunt is formed, and a designated portion (34) which serves to draw the solder to a designated location away from the shunt region upon subsequent solder reflow, thereby causing a physical break in the shunt (40, 54). Physical removal of the solder material would not be required. The shunt (40, 54) may also be in the form of an integral bridge of conductive material interconnecting the adjacent leads, which is removed by using a laser to melt the material.

Abstract translation: 具有MR传感器（24）的MR磁头（22）被保护以防止由静电放电或静电电场的存在引起的损坏。 在相邻的导电引线（18,19）之间提供分流器（40,54），或者在与MR头（22）上的确定相邻的点处到达MR传感器（24）。 焊接桥可用于分流（40,54）。 在将安装有MR磁头（22）的集成悬架（10）放置在磁盘驱动系统（1）中之前，将焊料分流器（40,54）移除。 焊料分流器（40,54）通过回流焊料并将回流的焊料从引线（18,19）上远离而被去除，以将分流器（40,54）穿过相邻引线（18,19）的电连接断开到 MR传感器（24）。 为了通过回流焊料来去除分流器（40,45），至少一个所选几何形状的焊料凸块（30,31,50）被放置在与引线（18,19）相邻的位置。 该凸角包括限制凸角（32），用于在分流器形成时将焊料限制在分流区域中;以及指定部分（34），用于在随后的焊料回流时将焊料拉制到远离分流区域的指定位置 ，从而导致分流器（40,54）中的物理断裂。 不需要物理去除焊料。 分流器（40,54）也可以是互连相邻引线的导电材料的整体桥的形式，其通过使用激光来去除以熔化材料。

公开(公告)号：WO1996030898A3

公开(公告)日：1996-10-03

申请号：PCT/IB1996000197

申请日：1996-03-11

Applicant: PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB

Inventor： PHILIPS ELECTRONICS N.V. ,  PHILIPS NORDEN AB ,  POSTMA, Lambertus ,  SOMERS, Gerardus, Henricus, Johannes ,  RUIGROK, Jacobus, Josephus, Maria

IPC: G11B05/39

公开(公告)号：WO1996028812A1

公开(公告)日：1996-09-19

申请号：PCT/US1996003098

申请日：1996-03-04

Applicant: QUANTUM CORPORATION

Inventor： QUANTUM CORPORATION ,  KIM, Young, Keun ,  NIX, J., Lamar

IPC: G11B05/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G01R33/093 ,  G11B5/3903 ,  G11B5/3967 ,  G11B5/399 ,  G11B2005/3996 ,  H01L43/08

Abstract: A magnetoresistive transducer and method for manufacturing the same includes a spin valve structure comprising a pinned, bottom ferromagnetic layer (58) and an active, top ferromagnetic layer (62) separated by a thin nonmagnetic metal spacer layer (60). The active ferromagnetic layer (62) and underlying spacer layer (60) are formed into a mesa structure having tapered opposing sides to promote better surface planarization in a thin film fabrication process. A pair of permanent magnet layer portions (68, 70) may be deposited at the end portions of the spin valve structure in a generally coplanar relationship to promote domain stabilization but may also be separated therefrom by a relatively thin separation layer. The magnetic read track width of the device can be accurately and reproducibly determined by photolithographically defining the spacing between the permanent magnet layer portions (68, 70) overlying the active ferromagnetic layer (62).

Abstract translation: 磁阻传感器及其制造方法包括自旋阀结构，其包括被钉扎的底部铁磁性层（58）和由薄的非磁性金属间隔层（60）分开的有源顶部铁磁层（62）。 活性铁磁层（62）和下面的间隔层（60）形成为具有锥形相对侧的台面结构，以在薄膜制造工艺中促进更好的表面平坦化。 可以在旋转阀结构的端部处以一般共面的关系沉积一对永磁体层部分（68,70），以促进区域稳定，但是也可以通过相对薄的分离层与其分开。 可以通过光刻地限定覆盖有源铁磁层（62）的永磁体层部分（68,70）之间的间隔来精确地和再现地确定器件的磁读取磁道宽度。

公开(公告)号：WO1996018189A1

公开(公告)日：1996-06-13

申请号：PCT/US1995016212

申请日：1995-12-08

Applicant: CONNER PERIPHERALS, INC.

Inventor： CONNER PERIPHERALS, INC. ,  SHRINKLE, Louis, J. ,  SCHWALL, Matthew

IPC: G11B05/39

CPC classification number: G11B20/10203 ,  G11B5/02 ,  G11B5/035

Abstract: An apparatus that compensates for the asymmetry and the baseline shift in the signal generated by a magnetoresistive head. The apparatus stores a first correction factor for the baseline shift, a second correction factor for correcting the amplitude of positive portion of the signal and a third correction factor for correcting the amplitude of negative portion of the signal. The first correction factor for correcting for baseline shift is added to the signal generated by the magnetoresistive head to generate a baseline corrected signal. The baseline corrected signal is then monitored for positive and negative excursion from the baseline and the positive excursions are multiplied by the second correction factor and the negative excursions are multiplied by the third correction factor for generating a compensated signal.

Abstract translation: 补偿由磁阻头产生的信号中的不对称性和基线漂移的装置。 该装置存储用于基线偏移的第一校正因子，用于校正信号的正部分的幅度的第二校正因子和用于校正信号的负部分的幅度的第三校正因子。 用于校正基线偏移的第一校正因子被添加到由磁阻头产生的信号以产生基线校正信号。 然后监测基线校正信号，以从基线检测正偏移和负偏移，并将正偏移乘以第二校正因子，并将负偏移乘以用于产生补偿信号的第三校正因子。

公开(公告)号：WO1996008814A1

公开(公告)日：1996-03-21

申请号：PCT/FR1995001168

申请日：1995-09-12

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ,  SILMAG CENG ,  FEDELI, Jean-Marc

Inventor： COMMISSARIAT A L'ENERGIE ATOMIQUE ,  SILMAG CENG

IPC: G11B05/39

CPC classification number: B82Y25/00 ,  B82Y10/00 ,  G11B5/3903 ,  G11B5/3925 ,  G11B5/3948 ,  G11B5/3967 ,  G11B2005/3996

Abstract: Planar magnetic head comprising a longitudinal multilayered magnetoresistor. The head of the invention comprises a multilayered-type magnetoresistor (MR) operating in longitudinal mode, the magnetoresistor being inserted in the air gap (24). The invention is useful in magnetic recording.

Abstract translation: 平面磁头包括纵向多层磁阻器。 本发明的头部包括以纵向模式工作的多层型磁电阻（MR），磁阻被插入气隙（24）中。 本发明在磁记录中是有用的。

公开(公告)号：WO1994019794A1

公开(公告)日：1994-09-01

申请号：PCT/JP1994000296

申请日：1994-02-24

Applicant: SONY CORPORATION ,  SUYAMA, Hideo ,  SEKIYA, Tetsuo ,  HAGA, Shuichi ,  ISHIKAWA, Wataru

Inventor： SONY CORPORATION

IPC: G11B05/39

CPC classification number: G11B5/3903

Abstract: This invention discloses a vertical magnetoresistive magnetic head wherein a magnetoresistive element is disposed in a vertical direction with respect to a sliding surface facing a magnetic recording medium, and a tip electrode laminated on a distal end is exposed at the sliding surface. The magnetoresistive element has a laminate film structure formed by laminating a pair of ferromagnetic thin films through a non-magnetic metal layer. The non-magnetic metal layer is made of Cu, having a thickness less than 10 nm. The ferromagnetic thin film is a thin film of a Ni-Fe alloy, Ni-Fe-Co alloy, and so forth, and preferably it has a thickness less than 10 nm. The magnetoresistive element is sandwiched between a pair of shield magnetic substances.

Abstract translation: 本发明公开了一种垂直磁阻磁头，其中磁阻元件相对于面向磁记录介质的滑动表面在垂直方向上设置，并且在远端层叠的尖端电极在滑动表面处露出。 磁阻元件具有通过非磁性金属层层压一对铁磁性薄膜而形成的层叠膜结构。 非磁性金属层由厚度小于10nm的Cu制成。 铁磁薄膜是Ni-Fe合金，Ni-Fe-Co合金等的薄膜，优选其厚度小于10nm。 磁阻元件夹在一对屏蔽磁性物质之间。

公开(公告)号：WO1993008562A2

公开(公告)日：1993-04-29

申请号：PCT/JP1992001363

申请日：1992-10-20

Applicant: FUJITSU LIMITED ,  MIZOSHITA, Yoshifumi ,  KOSHIKAWA, Takao ,  KANAI, Hitoshi ,  KANE, Junichi ,  OTSUKA, Yoshinori ,  IKEGAWA, Yukinori

Inventor： FUJITSU LIMITED

IPC: G11B05/39

CPC classification number: G11B5/3916 ,  G11B5/02 ,  G11B5/3183 ,  G11B5/3903 ,  G11B5/3925 ,  G11B5/3967 ,  G11B19/04

Abstract: Head having an MR layer (26) in a space (101) formed by shield layers (28, 33) by providing a distance enough to protect magnetic flux flowing through the MR layer from a recording medium through a gap (51) formed by the shield layers, from leaking out to the shield layers and a flux guide (25) provided between the MR layer and the gap, having an end magnetically connected to the MR, extending over an effective area of the MR head, and another end having a width a little narrower than a width of track of the recording medium. A side of the MR layer, opposite to the side connected with the flux guide layer is placed in a narrow space (102) formed at a corner of the space. Magnetic flux leaked from the gap due to a sense current flowing through the MR layer is eliminated by making a current flow through a recording coil layer or through an electrically conductive layer placed in the space.

Abstract translation: 头部具有由屏蔽层（28,33）形成的空间（101）中的MR层（26），通过提供足够的距离来保护从记录介质流过MR层的磁通量通过由 屏蔽层，泄漏到屏蔽层和设置在MR层和间隙之间的磁通引导件（25），其具有磁性地连接到MR的端部，延伸在MR磁头的有效区域上，另一端具有 宽度比记录介质的轨道宽度稍窄。 MR层的与与磁通引导层连接的一侧相对的一侧被放置在形成在该空间的角部的窄空间（102）中。 通过使流过记录线圈层的电流或通过放置在该空间中的导电层而消除由于流过MR层的感测电流而从间隙泄漏的磁通。

公开(公告)号：WO1990007774A1

公开(公告)日：1990-07-12

申请号：PCT/US1989005833

申请日：1989-12-26

Applicant: EASTMAN KODAK COMPANY

Inventor： EASTMAN KODAK COMPANY ,  SMITH, Neil ,  SHELOR, John, Richard

IPC: G11B05/39

CPC classification number: G11B5/3903 ,  H01F7/02

Abstract: A ''C'' shaped thin film deposited permanent magnetic structure (30) of essentially symmetrical form is designed to provide a planar region of transverse field (37) with little or no longitudinal field component. Practice of the present invention teaches asymmetrically modifiying the ''C'' shaped magnet to restore a small controlled amount of unidirectional longitudinal field component (31). The symmetry is broken by either angling (32) the direction of magnetization (36) of the magnet (30) relative to the symmetric geometric form of the structure, or by angling (32') the direction of the magnetization (36') and also changing the geometric shape of the magnet from a ''C'' shape to an ''L'' shape. The resultant field distribution of the deposited asymmetrical magnetic structure produces a magnetic field of sufficient strength for biasing the hard axis (37) of a coplanarly deposited MR element (38) with an additional relatively smaller magnitude undirectional easy axis field for longitudinally biasing (31) it.

Abstract translation: 被设计成具有基本上对称形状的“C”形薄膜沉积永磁结构（30），以提供具有很少或没有纵向场分量的横向场（37）的平面区域。 本发明的实践教导了不对称地修改“C”形磁体以恢复小的受控量的单向纵向场分量（31）。 通过使磁体（30）的磁化方向（36）相对于结构的对称几何形状，或者通过使磁化（36'）的方向（32'）和（32'）的方向（32'）和 也将磁体的几何形状从“C”形改变为“L”形。 沉积的非对称磁性结构的所得场分布产生足够强度的磁场，用于利用附加的相对较小的幅度方向易轴线场来偏置共面沉积的MR元件（38）的硬轴（37），用于纵向偏置（31） 它。

公开(公告)号：WO2003092350A3

公开(公告)日：2003-11-13

申请号：PCT/US2003/000421

申请日：2003-01-07

Applicant: CENYMER CORPORATION

Inventor： PARTEE, Charles

IPC: G11B05/39

Abstract: The invention discloses a process for creating an improved surface that serves as a base or underlayer (38), planarization layer (42), read gap layer (30), write gap layer (46) and encapsulation material (50) for use in generic devices that require superior heat dissipation, mechanical hardness and surface smoothness. More particularly, the invention discloses an improved material, a polymer precursor to ceramic, for use in such devices, and methods for making magnetic recording transducers, semiconductors and microelectronic mechanical system transducers using this material.

公开(公告)号：WO1998049676A1

公开(公告)日：1998-11-05

申请号：PCT/US1997015428

申请日：1997-09-02

Applicant: SEAGATE TECHNOLOGY, INC. ,  FERNANDEZ-DE-CASTRO, Juan, J.

Inventor： SEAGATE TECHNOLOGY, INC.

IPC: G11B05/39

CPC classification number: G11B5/3932 ,  G11B5/3903

Abstract: A magnetoresistive (MR) head (100) for use in a data storage system is disclosed. The MR head includes an MR sensor layer (170) and a soft adjacent layer (SAL) (120) disposed along a length of the MR sensor layer and adapted to vertically bias the MR sensor layer. A spacer layer (130) is formed between the MR sensor layer and the SAL in a central region (200) of the MR head. The MR sensor layer and the SAL are independently stabilized by first and second permanent magnet (PM) layers (160, 140) each formed in contact with one of the SAL and the MR sensor layer in first and second wing regions (210, 220) of the MR head. This allows a layer of low resistivity material (150) to be placed between the first and second PM layers in the first and second wing regions in order to lower the resistance of the MR head.

Abstract translation: 公开了一种用于数据存储系统的磁阻（MR）磁头（100）。 MR头包括沿着MR传感器层的长度设置并适于垂直偏置MR传感器层的MR传感器层（170）和软相邻层（SAL）（120）。 在MR头的中心区域（200）中的MR传感器层和SAL之间形成间隔层（130）。 MR传感器层和SAL通过第一和第二永磁体（PM）层（160,140）独立地稳定，每个永久磁体层（160,140）形成为与第一和第二翼区域（210,220）中的SAL和MR传感器层中的一个接触， 的MR头。 这允许一层低电阻率材料（150）放置在第一和第二翼区域中的第一和第二PM层之间，以便降低MR磁头的电阻。