公开(公告)号：FR2836279B1

公开(公告)日：2004-09-24

申请号：FR0202075

申请日：2002-02-19

Applicant: COMMISSARIAT ENERGIE ATOMIQUE

Inventor： DIJON JEAN ,  FOURNIER ADELINE ,  MONTMAYEUL BRIGITTE

IPC: H01J3/02 ,  H01J1/304 ,  H01J1/90 ,  H01J9/02 ,  H01J31/12

Abstract: A cathode structure of triode type comprises, superposed, a cathode forming electrode (13) and supporting a layer of electron emitting material (14), an electrical insulating layer (11) and a grid electrode (15). An opening (12) cut in the grid electrode and in the electrical insulating layer exposes the layer of electron emitting material. The layer of electron emitting material is situated in the central part of the opening in the grid electrode. An Independent claim is also included for a flat field emission screen incorporating several of the above cathode structures.

公开(公告)号：RU2118011C1

公开(公告)日：1998-08-20

申请号：RU96109506

申请日：1996-05-08

Applicant: GIVARGIZOV EVGENIJ INVIEVICH ,  CHUBUN NIKOLAJ NIKOLAEVICH ,  STEPANOVA ALLA NIKOLAEVNA ,  ZHIRNOV VIKTOR VLADIMIROVICH

Inventor： GIVARGIZOV EVGENIJ INVIEVICH ,  CHUBUN NIKOLAJ NIKOLAEVICH ,  STEPANOVA ALLA NIKOLAEVNA ,  ZHIRNOV VIKTOR VLADIMIROVICH

IPC: H01J9/02 ,  H01J1/304 ,  H01J1/90 ,  H01J3/02 ,  H01J9/18 ,  H01J9/24 ,  H01J19/24 ,  H01J19/44 ,  H01J21/10 ,  H01J29/04 ,  H01J29/82 ,  H01J29/87 ,  H01J31/12

Abstract: FIELD: vacuum and emission electronics (displays, microwave electronics, etc. ). SUBSTANCE: cathode of autoemission triode is formed by single-crystalline substrate carrying single- crystalline point emitters and principal components: cathode, grid (control electrode), and anode; two types of spacers are placed between principal components both forming single-crystalline integral structure with mentioned substrate. Emitters are covered with material which increases electron emission. Control electrode is separate spiral part. Proposed device built around this triode for optical display of information is characterized in that addressing is ensured perpendicular to buses one of which is made on control electrode and other bus, on cathode or anode. In manufacturing such triode, emitter and spacers are produced by controlled rotation of thread-shaped crystals followed by their pointing; control electrode is produced by evaporation, microlithography, and etching. EFFECT: improved design, facilitated manufacture. 18 cl, 8 dwgu

公开(公告)号：CA1254938A

公开(公告)日：1989-05-30

申请号：CA494707

申请日：1985-11-06

Applicant: SONY CORP

Inventor： HAYASHI MASATAKE

IPC: H01J31/28 ,  H01J29/02 ,  H01J29/48 ,  H01J29/62 ,  H01J31/34 ,  H01J1/90

Abstract: In an image pickup tube comprising a glass bulb, a face plate, a target surface, a mesh electrode arranged in opposition to the target surface, and a mesh holder to support the mesh electrode, the mesh electrode having supported with non-uniform tension at various portions thereof by the mesh holder whereby microphonic noise is attenuated rapidly.

公开(公告)号：AU539677B2

公开(公告)日：1984-10-11

申请号：AU7047581

申请日：1981-05-12

Applicant: IBM

Inventor： DEPP STEVEN WADE ,  PIGGIN BRUCE PAUL

IPC: H01J29/52 ,  H01J29/04 ,  H01J29/50 ,  H01J31/12 ,  H01L27/12 ,  H01J1/90

Abstract: A multiple electron beam cathode ray tube has a plurality of cathodes in a plane to form an array. Grids on the same substrate are positioned in spaced relation about the cathodes so that a plurality of individually controlled electron beams are formed when appropriate potentials are applied to the cathodes and grids.

公开(公告)号：ES8404564A1

公开(公告)日：1984-04-16

申请号：ES520233

申请日：1983-03-02

Applicant: PHILIPS NV

IPC: H01J37/28 ,  H01J29/04 ,  H01J29/86 ,  H01J29/90 ,  H01J31/08 ,  H01J31/38 ,  H01J1/90

Abstract: DISPOSITIVO SEMICONDUCTOR APLICABLE A MECANISMOS PARA CAPTAR O PRESENTAR VISUALMENTE IMAGENES.COMPRENDE DIFERENTES CATODOS EN UN CUERPO SEMICONDUCTOR (21), ESTANDO INDICADAS LAS REGIONES DE EMISION, MEDIANTE ABERTURAS CIRCULARES (37), EN EL TRAZADO (26) DE METALIZACION DE CONTACTO COMUN, MIENTRAS QUE LA REGION QUE QUEDA LIBRE, SE INDICA POR LA LINEA DISCONTINUA (38).

公开(公告)号：CH452625A

公开(公告)日：1968-03-15

申请号：CH1661765

申请日：1965-12-02

Applicant: GEN ELECTRIC

Inventor： RICHARD JAY KETTERER

IPC: C04B14/20 ,  H01B3/04 ,  H01J1/90

公开(公告)号：JP3800256B2

公开(公告)日：2006-07-26

申请号：JP10629996

申请日：1996-04-02

Applicant: 日本電気硝子株式会社

Inventor： 俊郎 山中

IPC: C03C8/02 ,  C03C3/064 ,  C03C3/066 ,  C03C3/14 ,  C03C4/00 ,  C03C4/16 ,  H01B3/08 ,  H01J1/90 ,  H01J31/15

CPC classification number: C03C3/064 ,  C03C3/14 ,  C03C4/16

公开(公告)号：JP2647866B2

公开(公告)日：1997-08-27

申请号：JP29112987

申请日：1987-11-17

Applicant: NIPPON DENKI KK

Inventor： SUZUKI KAZUTAKA

IPC: H01J5/02 ,  H01J1/90 ,  H01J23/06

公开(公告)号：JPH01313835A

公开(公告)日：1989-12-19

申请号：JP14423788

申请日：1988-06-10

Applicant: MATSUSHITA ELECTRIC IND CO LTD

Inventor： KITAO SATOSHI ,  NONOMURA KINZO ,  TAKAHASHI MASAYUKI ,  HASHIGUCHI JUNPEI ,  HAMADA KIYOSHI

IPC: H01J1/90

Abstract: PURPOSE:To suppress a discharge between electrode plates and improve the insulating yield strength by protrusively mounting part of the electrode plate on one or more steps of a projection provided with one or more steps on an insulator. CONSTITUTION:A metal body 1 is mounted on a protruded step section 3 provided on an insulator 2 and coupled with a support projection 4 and fixed. The voltage is applied to generate a high potential difference, e.g., 20-30KV, across the metal plates 1. A slight void of the portion where the metal plate 1 and the insulator 2 are put in contact with each other is covered by the metal plate 1, the potential near it approaches the potential of the metal plate 1, thus the electric field at the portion of the void can be made a half or below of the conventional one, the electron emission from the metal plate 1 is suppressed, a creeping discharge between the metal plates hardly occurs. The creeping insulating yield strength of the insulator can be improved.

公开(公告)号：JPS52155460U

公开(公告)日：1977-11-25

申请号：JP6401676

申请日：1976-05-21

IPC: H01J23/15 ,  H01J1/90 ,  H01J5/32 ,  H01J23/04 ,  H01J23/14