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    Membrane structure for electrochemical sensor
    291.
    发明授权
    Membrane structure for electrochemical sensor 有权
    电化学传感器膜结构

    公开(公告)号：US08847335B2

    公开(公告)日：2014-09-30

    申请号：US13597044

    申请日：2012-08-28

    Applicant: Shian-Yeu Kam ,  Tien-Choy Loh ,  Ying Yu ,  Fery Riswan ,  Frederic Sala

    Inventor： Shian-Yeu Kam ,  Tien-Choy Loh ,  Ying Yu ,  Fery Riswan ,  Frederic Sala

    IPC: H01L27/14 ,  B82Y40/00 ,  G01N27/74 ,  G01R33/09 ,  G11B5/39

    CPC classification number: B82Y40/00 ,  B81B3/0072 ,  B81B2201/0214 ,  B81B2203/0127 ,  B81C2201/0167 ,  G01R33/093 ,  G01R33/098 ,  G01R33/16

    Abstract: A micro-electrochemical sensor contains magnetic compounds inserted within a substrate that exert a magnetic force of attraction on paramagnetic beads held in contact with an electrode. The magnetic compounds can be contained within a fluid that is introduced into a void in the substrate. The electrode can be spaced apart from the magnetic compounds by a dielectric multi-layer membrane. During the fabrication process, different layers within the membrane-electrode structure can be tuned to have compressive or tensile stress so as to maintain structural integrity of the membrane, which is thin compared with the size of the void beneath it. During a process of forming the structure of the sensor, the tensile stress in a TiW adhesion layer can be adjusted to offset a composite net compressive stress associated with the dielectric layers of the membrane. The membrane can also be used in forming both the electrode and the void.

    Abstract translation: 微电化学传感器包含插入在衬底内的磁性化合物，其在与电极保持接触的顺磁珠上施加吸引力。 磁性化合物可以包含在引入基底中的空隙的流体中。 电极可以通过电介质多层膜与磁性化合物间隔开。 在制造过程中，可以调整膜 - 电极结构内的不同层以具有压缩或拉伸应力，以便保持膜的结构完整性，与其下方的空隙尺寸相比较薄。 在形成传感器的结构的过程中，可以调节TiW粘合层中的拉伸应力以抵消与膜的电介质层相关联的复合网压应力。 膜也可以用于形成电极和空隙。

    Nonvolatile nano-electromechanical system device
    294.
    发明授权
    Nonvolatile nano-electromechanical system device 失效
    非易失性纳米机电系统装置

    公开(公告)号：US08681409B2

    公开(公告)日：2014-03-25

    申请号：US13566053

    申请日：2012-08-03

    Applicant: David J. Frank ,  Guy Cohen

    Inventor： David J. Frank ,  Guy Cohen

    IPC: G02B26/08

    CPC classification number: B81B3/0072 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2207/053 ,  B81C2201/0167

    Abstract: A nonvolatile nano-electromechanical system device is provided and includes a cantilever structure, including a beam having an initial shape, which is supported at one end thereof by a supporting base and a beam deflector, including a phase change material (PCM), disposed on a portion of the beam in a non-slip condition with a material of the beam, the PCM taking one of an amorphous phase or a crystalline phase and deflecting the beam from the initial shape when taking the crystalline phase.

    Abstract translation: 提供了非易失性纳米机电系统装置，其包括悬臂结构，其包括具有初始形状的梁，所述梁的一端由支撑基座支撑，并且梁偏转器包括相变材料（PCM），所述相变材料 光束的一部分处于防滑状态，具有光束的材料，PCM采取非晶相或结晶相中的一种，并且在获取结晶相时将光束从初始形状偏转。

    MEMBRANE STRUCTURE FOR ELECTROCHEMICAL SENSOR
    295.
    发明申请
    MEMBRANE STRUCTURE FOR ELECTROCHEMICAL SENSOR 有权
    电化学传感器膜结构

    公开(公告)号：US20140061823A1

    公开(公告)日：2014-03-06

    申请号：US13597044

    申请日：2012-08-28

    Applicant: Shian-Yeu Kam ,  Tien-Choy Loh ,  Ying Yu ,  Fery Riswan ,  Frederic Sala

    Inventor： Shian-Yeu Kam ,  Tien-Choy Loh ,  Ying Yu ,  Fery Riswan ,  Frederic Sala

    IPC: H01L29/66 ,  H01L21/02

    CPC classification number: B82Y40/00 ,  B81B3/0072 ,  B81B2201/0214 ,  B81B2203/0127 ,  B81C2201/0167 ,  G01R33/093 ,  G01R33/098 ,  G01R33/16

    Abstract: A micro-electrochemical sensor contains magnetic compounds inserted within a substrate that exert a magnetic force of attraction on paramagnetic beads held in contact with an electrode. The magnetic compounds can be contained within a fluid that is introduced into a void in the substrate. The electrode can be spaced apart from the magnetic compounds by a dielectric multi-layer membrane. During the fabrication process, different layers within the membrane-electrode structure can be tuned to have compressive or tensile stress so as to maintain structural integrity of the membrane, which is thin compared with the size of the void beneath it. During a process of forming the structure of the sensor, the tensile stress in a TiW adhesion layer can be adjusted to offset a composite net compressive stress associated with the dielectric layers of the membrane. The membrane can also be used in forming both the electrode and the void.

    Abstract translation: 微电化学传感器包含插入在衬底内的磁性化合物，其在与电极保持接触的顺磁珠上施加吸引力。 磁性化合物可以包含在引入基底中的空隙的流体中。 电极可以通过电介质多层膜与磁性化合物间隔开。 在制造过程中，可以调整膜 - 电极结构内的不同层以具有压缩或拉伸应力，以便保持膜的结构完整性，与其下方的空隙尺寸相比较薄。 在形成传感器的结构的过程中，可以调节TiW粘合层中的拉伸应力以抵消与膜的电介质层相关联的复合网压应力。 膜也可以用于形成电极和空隙。

    MULTI-LAYER SUBSTRATE STRUCTURE AND MANUFACTURING METHOD FOR THE SAME
    296.
    发明申请
    MULTI-LAYER SUBSTRATE STRUCTURE AND MANUFACTURING METHOD FOR THE SAME 审中-公开
    多层基板结构及其制造方法

    公开(公告)号：US20130147021A1

    公开(公告)日：2013-06-13

    申请号：US13806787

    申请日：2011-06-21

    Applicant: Riikka Puurunen ,  Kimmo Henttinen ,  Hannu Kattelus ,  Tommi Suni

    Inventor： Riikka Puurunen ,  Kimmo Henttinen ,  Hannu Kattelus ,  Tommi Suni

    IPC: H01L21/02 ,  H01L29/02

    CPC classification number: H01L21/0228 ,  B81B2203/0118 ,  B81B2203/0315 ,  B81C1/00801 ,  B81C2201/014 ,  B81C2201/0167 ,  B81C2201/053 ,  B81C2203/0118 ,  H01L29/02

    Abstract: A method for manufacturing a multi-layer substrate structure such as a CSOI wafer structure (cavity-SOI, silicon-on-insulator) comprising obtaining a first and second wafer, such as two silicon wafers, wherein at least one of the wafers may be optionally provided with a material layer such as an oxide layer (302, 404), forming a cavity on the bond side of the first wafer (306, 406), depositing, preferably by ALD (Atomic Layer Deposition), a material layer, such as thin alumina layer, on either wafer arranged so as to at least in places face the other wafer and cover at least portion of the cavity of the first wafer, such as bottom, wall and/or edge thereof, and enable stopping etching, such as dry etching, into the underlying material (308, 408), and bonding the wafers provided with at least the aforesaid ALD layer as an intermediate layer together to form the multi-layer semiconductor substrate structure (310, 312). A related multi-layer substrate structure is presented.

    Abstract translation: 一种用于制造诸如CSOI晶片结构（空腔SOI，绝缘体上硅）的多层衬底结构的方法，包括获得诸如两个硅晶片的第一和第二晶片，其中至少一个晶片可以是 可选地设置有诸如氧化物层（302,404）的材料层，在第一晶片（306,406）的接合侧上形成空腔，优选通过ALD（原子层沉积）沉积材料层，例如 作为薄氧化铝层，在任一晶片上布置成至少在面对另一晶片的位置并且覆盖第一晶片的空腔的至少一部分，例如底部，壁和/或边缘，并且能够停止蚀刻，例如 作为干蚀刻，进入下层材料（308,408），并且将设置有至少上述ALD层的晶片作为中间层结合在一起以形成多层半导体衬底结构（310,312）。 提出了相关的多层基板结构。

    MECHANICAL LAYER AND METHODS OF MAKING THE SAME
    298.
    发明申请
    MECHANICAL LAYER AND METHODS OF MAKING THE SAME 审中-公开
    机械层及其制造方法

    公开(公告)号：US20130057558A1

    公开(公告)日：2013-03-07

    申请号：US13227263

    申请日：2011-09-07

    Applicant: Chuan Pu ,  Yi Tao ,  Chandra S. Tupelly ,  Kostadin D. Djordjev ,  Fan Zhong ,  Rihui He ,  Wenyue Zhang

    Inventor： Chuan Pu ,  Yi Tao ,  Chandra S. Tupelly ,  Kostadin D. Djordjev ,  Fan Zhong ,  Rihui He ,  Wenyue Zhang

    IPC: G06T1/00 ,  G06F3/038 ,  B05D5/12 ,  H02N1/00

    CPC classification number: G02B26/001 ,  B81B3/0072 ,  B81B2201/042 ,  B81B2203/019 ,  B81C2201/0167 ,  B81C2201/017

    Abstract: This disclosure provides systems, methods and apparatus for controlling a mechanical layer. In one aspect, an electromechanical systems device includes a substrate and a mechanical layer positioned over the substrate to define a gap. The mechanical layer is movable in the gap between an actuated position and a relaxed position, and includes a mirror layer, a cap layer, and a dielectric layer disposed between the mirror layer and the cap layer. The mechanical layer is configured to have a curvature in a direction away from the substrate when the mechanical layer is in the relaxed position. In some implementations, the mechanical layer can be formed to have a positive stress gradient directed toward the substrate that can direct the curvature of the mechanical layer upward when the sacrificial layer is removed.

    Abstract translation: 本公开提供了用于控制机械层的系统，方法和装置。 在一个方面，机电系统装置包括基板和位于基板上方以限定间隙的机械层。 机械层可以在致动位置和松弛位置之间的间隙中移动，并且包括镜层，盖层和设置在镜层和盖层之间的电介质层。 当机械层处于松弛位置时，机械层被配置为具有远离基板的方向的曲率。 在一些实施方案中，机械层可以形成为具有朝向衬底的正应力梯度，当去除牺牲层时，可以向上引导机械层的曲率。

    ELECTROMECHANICAL DEVICE CONFIGURED TO MINIMIZE STRESS-RELATED DEFORMATION AND METHODS FOR FABRICATING SAME
    299.
    发明申请
    ELECTROMECHANICAL DEVICE CONFIGURED TO MINIMIZE STRESS-RELATED DEFORMATION AND METHODS FOR FABRICATING SAME 审中-公开
    配置为最小化应力相关变形的电动装置及其制造方法

    公开(公告)号：US20120287138A1

    公开(公告)日：2012-11-15

    申请号：US13556127

    申请日：2012-07-23

    Applicant: Fan Zhong ,  Lior Kogut

    Inventor： Fan Zhong ,  Lior Kogut

    IPC: G02B26/00 ,  B05D5/12 ,  B44C1/22 ,  G06T1/00

    CPC classification number: G02B26/0841 ,  B81B3/0072 ,  B81B2201/047 ,  B81B2203/0163 ,  B81B2203/019 ,  B81B2203/0307 ,  B81B2203/053 ,  B81C1/00142 ,  B81C1/00666 ,  B81C2201/0167 ,  G02B26/001 ,  Y10S359/90

    Abstract: Embodiments of MEMS devices include a movable layer supported by overlying support structures, and may also include underlying support structures. In one embodiment, the residual stresses within the overlying support structures and the movable layer are substantially equal. In another embodiment, the residual stresses within the overlying support structures and the underlying support structures are substantially equal. In certain embodiments, substantially equal residual stresses are be obtained through the use of layers made from the same materials having the same thicknesses. In further embodiments, substantially equal residual stresses are obtained through the use of support structures and/or movable layers which are mirror images of one another.

    Abstract translation: MEMS器件的实施例包括由上覆的支撑结构支撑的可移动层，并且还可以包括下面的支撑结构。 在一个实施例中，覆盖的支撑结构和可移动层内的残余应力基本相等。 在另一个实施例中，上覆支撑结构和下面的支撑结构内的残余应力基本相等。 在某些实施例中，通过使用由具有相同厚度的相同材料制成的层，可以获得基本相等的残余应力。 在另外的实施例中，通过使用作为彼此的镜像的支撑结构和/或可移动层来获得基本相等的残余应力。

    DIFFUSION BARRIER LAYER FOR MEMS DEVICES
    300.
    发明申请
    DIFFUSION BARRIER LAYER FOR MEMS DEVICES 审中-公开
    用于MEMS器件的扩散障碍层

    公开(公告)号：US20120086998A1

    公开(公告)日：2012-04-12

    申请号：US13324656

    申请日：2011-12-13

    Applicant: Hsin-Fu Wang ,  Ming-Hau Tung ,  Stephen Zee

    Inventor： Hsin-Fu Wang ,  Ming-Hau Tung ,  Stephen Zee

    IPC: G02B26/00 ,  C23F1/44

    CPC classification number: G02B26/001 ,  B81B3/0072 ,  B81B2201/047 ,  B81C1/00793 ,  B81C2201/0167

    Abstract: Described herein is the use of a diffusion barrier layer between metallic layers in MEMS devices. The diffusion barrier layer prevents mixing of the two metals, which can alter desired physical characteristics and complicate processing. In one example, the diffusion barrier layer may be used as part of a movable reflective structure in interferometric modulators.

    Abstract translation: 这里描述的是在MEMS器件中在金属层之间使用扩散阻挡层。 扩散阻挡层防止两种金属的混合，这可改变所需的物理特性并使加工变得复杂。 在一个示例中，扩散阻挡层可以用作干涉式调制器中的可移动反射结构的一部分。

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