公开(公告)号：US06445006B1

公开(公告)日：2002-09-03

申请号：US09361910

申请日：1999-07-27

Applicant: George R. Brandes ,  Xueping Xu

Inventor： George R. Brandes ,  Xueping Xu

IPC: H01L21365

CPC classification number: H01J9/025 ,  B82Y10/00 ,  G11C13/025 ,  G11C23/00 ,  H01J1/304 ,  H01J2201/30469 ,  H01J2201/319 ,  Y10S977/742 ,  Y10S977/776

Abstract: A microelectronic or microelectromechanical device, including a substrate and a carbon microfiber formed thereon, which may be employed as an electrical connector for the device or as a selectively translational component of a microelectromechanical (MEMS) device.

Abstract translation: 微电子或微机电装置，包括其上形成的基底和碳微纤维，其可用作该装置的电连接器或微机电（MEMS）装置的选择性平移部件。

公开(公告)号：US20020113536A1

公开(公告)日：2002-08-22

申请号：US10109847

申请日：2002-04-01

Inventor： Ammar Derraa

IPC: H01J001/02

CPC classification number: H01J9/185 ,  H01J31/127 ,  H01J2201/319

Abstract: Field emitter display (FED) assemblies and methods of forming field emitter display (FED) assemblies are described. In one embodiment, a substrate is provided having a column line formed and supported thereby. A plurality of field emitter tip regions are formed and disposed in operable proximity to the column line. At least some of the regions define different pixels of the display. A continuous resistor is interposed between the column line and at least two different pixels. In another embodiment, a column line is formed and supported by a substrate. A plurality of field emitter tip regions are formed and disposed in operable proximity to the column line. The regions define different pixels of the display. A single current-limiting resistor is operably coupled with the column line and at least two different pixels. In yet another embodiment, a series of column lines are formed over a substrate. A series of field emitter tip regions are formed and arranged into discrete pixels which are disposed in operable proximity to individual respective column lines. A series of resistor strips is formed and supported by the substrate. The resistor strips individually underlie respective individual series of field emitter tip regions. The individual resistor strips operably connect respective column lines and field emitter tip regions. At least one of the resistor strips operably connects its associated column line and at least two different discrete pixels. Other embodiments are described.

Abstract translation: 描述了场发射器显示（FED）组件和形成场发射器显示（FED）组件的方法。 在一个实施例中，提供具有形成并由其支撑的列线的基板。 多个场发射极尖端区域形成并布置成可操作地接近列线。 至少一些区域定义显示器的不同像素。 在列线和至少两个不同的像素之间插入连续电阻。 在另一个实施例中，柱线由衬底形成并支撑。 多个场发射极尖端区域形成并布置成可操作地接近列线。 这些区域定义显示器的不同像素。 单个限流电阻器与列线和至少两个不同的像素可操作地耦合。 在另一个实施例中，在衬底上形成一系列列线。 一系列场发射器尖端区域形成并布置成离散的像素，这些离散像素设置成可操作地接近各个相应的列线。 一系列电阻条由衬底形成并支撑。 电阻带分别位于各个系列的场发射器尖端区域的下面。 各个电阻条可操作地连接相应的列线和场发射极尖端区域。 电阻条中的至少一个可操作地连接其相关联的列线和至少两个不同的离散像素。 描述其他实施例。

公开(公告)号：US20020096684A1

公开(公告)日：2002-07-25

申请号：US10092887

申请日：2002-03-07

Inventor： George R. Brandes ,  Chris S. Christos ,  Xueping Xu

IPC: H01L031/0312

CPC classification number: H01L28/20 ,  H01J1/3042 ,  H01J2201/30403 ,  H01J2201/319 ,  H01J2329/00 ,  H01L31/03765 ,  Y02E10/548

Abstract: Amorphous silicon carbide thin film structures, including: protective coatings for windows in infrared process stream monitoring systems and sensor domes, heated windows, electromagnetic interference shielding members and integrated micromachined sensors; high-temperature sensors and circuits; and diffusion barrier layers in VLSI circuits. The amorphous silicon carbide thin film structures are readily formed, e.g., by sputtering at low temperatures.

Abstract translation: 无定形碳化硅薄膜结构，包括：红外线工艺流监测系统和传感器圆顶中的窗户保护涂层，加热窗，电磁干扰屏蔽构件和集成微机械传感器; 高温传感器和电路; 和VLSI电路中的扩散阻挡层。 非晶碳化硅薄膜结构容易形成，例如通过在低温下溅射。

公开(公告)号：US06398608B1

公开(公告)日：2002-06-04

申请号：US09723012

申请日：2000-11-27

Applicant: David A. Cathey, Jr. ,  John Lee

Inventor： David A. Cathey, Jr. ,  John Lee

IPC: H01J924

CPC classification number: H01J9/025 ,  H01J29/04 ,  H01J29/06 ,  H01J29/89 ,  H01J31/127 ,  H01J2201/319

Abstract: A method for fabricating a field emission display (FED) with improved junction leakage characteristics is provided. The method includes the formation of a light blocking element between a cathodoluminescent display screen of the FED and semiconductor junctions formed on a baseplate of the FED. The light blocking element protects the junctions from light formed at the display screen and light generated in the environment striking the junctions. Electrical characteristics of the junctions thus remain constant and junction leakage is improved. The light blocking element may be formed as an opaque light absorbing or light reflecting layer. In addition, the light blocking element may be patterned to protect predetermined areas of the baseplate and may provide other circuit functions such as an interconnect layer.

Abstract translation: 提供了一种制造具有改善的结漏电特性的场发射显示（FED）的方法。 该方法包括在FED的阴极发光显示屏和形成在FED的底板上的半导体结之间形成遮光元件。 光阻挡元件保护接点免受在显示屏上形成的光和在环境中产生的光的撞击。 因此，结的电气特性保持恒定，并且提高结漏电。 遮光元件可以形成为不透明的光吸收或光反射层。 此外，遮光元件可以被图案化以保护基板的预定区域并且可以提供诸如互连层的其它电路功能。

公开(公告)号：US20010040431A1

公开(公告)日：2001-11-15

申请号：US08826454

申请日：1997-03-27

Inventor： XUEPING XU ,  GEORGE R. BRANDES ,  CHRISTOPHER J. SPINDT ,  COLIN D. STANNERS ,  JOHN M. MACAULAY

IPC: H01J001/62 ,  H01J063/04

CPC classification number: H01J1/3042 ,  H01J2201/30426 ,  H01J2201/319 ,  H01J2329/00

Abstract: A cathode structure suitable for a flat panel display is provided with coated emitters. The emitters are formed with material, typically nickel, capable of growing to a high aspect ratio. These emitters are then coated with carbon containing material for improving the chemical robustness and reducing the work function. One coating process is a DC plasma deposition process in which acetylene is pumped through a DC plasma reactor to create a DC plasma for coating the cathode structure. An alternative coating process is to electrically deposit raw carbon-based material onto the surface of the emitters, and subsequently reduce the raw carbon-based material to the carbon containing material. Work function of coated emitters is typically reduced by about 0.8 to 1.0 eV.

Abstract translation: 适用于平板显示器的阴极结构设置有涂覆的发射器。 发射体由能够生长到高纵横比的材料（通常为镍）形成。 然后，这些发射体涂覆有含碳材料，以改善化学稳定性并降低功函数。 一个涂覆工艺是DC等离子体沉积工艺，其中将乙炔泵送通过DC等离子体反应器以产生用于涂覆阴极结构的DC等离子体。 另一种涂覆方法是将原始碳基材料电沉积到发射体的表面上，随后将原始的碳基材料还原成含碳材料。 涂覆发射体的功函数通常降低约0.8至1.0eV。

公开(公告)号：US6163107A

公开(公告)日：2000-12-19

申请号：US37035

申请日：1998-03-09

Applicant: Shigeo Itoh ,  Takahiro Niiyama ,  Masaharu Tomita ,  Yoshitaka Kagawa ,  Akira Inoue ,  Junji Itoh ,  Seigo Kanemaru

Inventor： Shigeo Itoh ,  Takahiro Niiyama ,  Masaharu Tomita ,  Yoshitaka Kagawa ,  Akira Inoue ,  Junji Itoh ,  Seigo Kanemaru

IPC: H01J1/304 ,  G09G3/20 ,  G09G3/22 ,  H01J3/02 ,  H01J29/04 ,  H01J29/96 ,  H01J31/12 ,  H01J1/30

CPC classification number: H01J3/022 ,  G09G3/2011 ,  G09G3/22 ,  H01J2201/319 ,  H01J2329/00

Abstract: A field emission cathode that can uniform the number of electrons emitted from each emitter and can prevent a line defect even when a gate electrode is electrically short-circuited with an emitter. The movement of electrons in a channel formed on the channel forming electrode is controlled by applying a positive voltage to the current control electrode, so that the current supplied from the cathode electrode to the emitter can be controlled. If the emitter is short-circuited with the gate electrode, the increased current density destroys the channel, so that the current supply to the emitter can be stopped.

Abstract translation: 场发射阴极可以均匀化从每个发射极发射的电子数，并且即使当栅极与发射极电短路时也可以防止线路缺陷。 通过向电流控制电极施加正电压来控制形成在沟道形成电极上的沟道中的电子的移动，从而可以控制从阴极供给到发射极的电流。 如果发射极与栅电极短路，则增加的电流密度会破坏通道，从而可以停止对发射极的电流供应。

公开(公告)号：US6137219A

公开(公告)日：2000-10-24

申请号：US122823

申请日：1998-07-27

Applicant: Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho ,  Hyung Joun Yoo

Inventor： Yoon Ho Song ,  Jin Ho Lee ,  Seung Youl Kang ,  Kyoung Ik Cho ,  Hyung Joun Yoo

IPC: H01J1/30 ,  G09G3/22 ,  H01J31/12

CPC classification number: G09G3/22 ,  H01J31/127 ,  G09G2300/08 ,  H01J2201/304 ,  H01J2201/319

Abstract: A field emission display having an n-channel high voltage thin film transistor is disclosed. According to the present invention, a signal for driving pixels controls by the nHVTFT attached with each pixel, therefore, the signal voltage of row and column drivers is exceedingly decreased. As a result, it is possible to implement a field emission display capable of providing a high quality picture in a low consumption power, a low driving voltage and inexpensive to manufacture, and preventing a line cross talk using the nHVTFT. By using a cylindrical resistive body underlying a cone-shaped emitter tip, the present invention is to provide a field emission display having an excellent contollability and stability of the emission current, and a dynamic driving capability.

Abstract translation: 公开了具有n沟道高电压薄膜晶体管的场致发射显示器。 根据本发明，通过每个像素附着的nHVTFT控制用于驱动像素的信号，因此，行和列驱动器的信号电压被极大地降低。 结果，可以实现能够以低功耗，低驱动电压提供高质量图像并且制造成本低廉的场致发射显示器，并且防止使用nHVTFT的线路串扰。 通过使用锥形发射极尖端下方的圆柱形电阻体，本发明提供了具有优异的发射电流的可配置性和稳定性以及动态驱动能力的场致发射显示器。

公开(公告)号：US6060823A

公开(公告)日：2000-05-09

申请号：US46700

申请日：1998-03-24

Applicant: Akihiko Okamoto ,  Hisashi Takemura ,  Yoshinori Tomihari ,  Naruaki Takada

Inventor： Akihiko Okamoto ,  Hisashi Takemura ,  Yoshinori Tomihari ,  Naruaki Takada

IPC: H01J1/304 ,  H01J1/02

CPC classification number: H01J1/3042 ,  H01J2201/319

Abstract: A field emission cold cathode element designed with the objects of enabling control of overcurrents that arise at times of discharge without adding a power source or complicating the operating circuits, realizing high-frequency operation and lower power consumption without giving rise to short-circuit damage due to discharge breakdown, and moreover, suppressing increases in element temperature; wherein an n-type region underlying emitters is divided between three n-type semiconductor regions: a first n-type semiconductor region, a second n-type semiconductor region and a third n-type semiconductor region. A third n-type semiconductor region below the emitters formed so as to be surrounded by a p-type semiconductor region, a second n-type semiconductor region below the third n-type semiconductor region formed so as to be surrounded by a p-type semiconductor region, and a first n-type semiconductor region formed below the second n-type semiconductor region; wherein the cross section of the second n-type semiconductor region is smaller than the cross section of the third n-type semiconductor region, thereby producing an n-type region made up of three n-type semiconductor regions that has a constricted shape.

Abstract translation: 一种场致发射冷阴极元件，其设计的目的是能够控制放电时产生的过电流而不增加电源或使电路复杂化，实现高频操作和降低功耗，而不会引起短路损坏 放电击穿，此外，抑制元件温度升高; 其特征在于，在三个n型半导体区域之间划分下面发射极的n型区域：第一n型半导体区域，第二n型半导体区域和第三n型半导体区域。 形成为被p型半导体区域围绕的发射体下方的第三n型半导体区域，形成为被p型半导体区域围绕的第三n型半导体区域的第二n型半导体区域 半导体区域和形成在第二n型半导体区域下方的第一n型半导体区域; 其中所述第二n型半导体区域的横截面小于所述第三n型半导体区域的横截面，由此产生由具有收缩形状的三个n型半导体区域构成的n型区域。

公开(公告)号：US06028322A

公开(公告)日：2000-02-22

申请号：US120988

申请日：1998-07-22

Applicant: Behnam Moradi

Inventor： Behnam Moradi

IPC: H01J1/304 ,  H01J3/02 ,  H01L29/06 ,  H01L29/12

CPC classification number: H01J3/022 ,  H01J1/3042 ,  H01J2201/319

Abstract: A field emission display includes a substrate, a plurality of emitters formed on the substrate, a semiconductor device formed in or on the substrate for controlling the flow of electrons to the emitters and a dielectric layer formed on the substrate. An extraction grid is formed on the dielectric layer substantially in a plane of tips of the plurality of emitters and includes openings each surrounding one of the emitters. The display also includes a transparent viewing screen, a transparent conductor formed on the viewing screen and a cathodoluminescent layer formed on the transparent conductor. The semiconductor device includes a gate dielectric and a field oxide. Significantly, the field oxide includes an interfacial region acting as a trapping and recombination site for mobile charge carriers. As a result, the semiconductor device is more robust and is better able to resist parameter shifts or performance degradation due to exposure to X-rays and photons that are incidentally generated along with the desired images on the display. This results in a more robust field emission display.

Abstract translation: 场发射显示器包括衬底，形成在衬底上的多个发射体，形成在衬底中或衬底上的半导体器件，用于控制向发射体的电子流和形成在衬底上的电介质层。 提取栅格基本上在多个发射器的尖端的平面上形成在电介质层上，并且包括围绕发射器之一的开口。 显示器还包括透明观察屏幕，形成在观察屏幕上的透明导体和形成在透明导体上的阴极发光层。 半导体器件包括栅极电介质和场氧化物。 重要的是，场氧化物包括用作移动电荷载体的捕获和重组位点的界面区域。 结果，半导体器件更坚固，并且能够更好地抵抗由于暴露于与显示器上的所需图像并行地产生的X射线和光子的参数偏移或性能劣化。 这导致更强劲的场致发射显示。

公开(公告)号：US5935639A

公开(公告)日：1999-08-10

申请号：US9140

申请日：1998-01-20

Applicant: John P. Sullivan ,  Thomas A. Friedmann

Inventor： John P. Sullivan ,  Thomas A. Friedmann

IPC: H01J1/304 ,  H01J9/02 ,  B05D5/12 ,  B05D3/06

CPC classification number: H01J9/025 ,  H01J1/304 ,  H01J2201/319

Abstract: A novel field emitter device for cold cathode field emission applications, comprising a multi-layer resistive carbon film.The multi-layered film of the present invention is comprised of at least two layers of a resistive carbon material, preferably amorphous-tetrahedrally coordinated carbon, such that the resistivities of adjacent layers differ. For electron emission from the surface, the preferred structure comprises a top layer having a lower resistivity than the bottom layer. For edge emitting structures, the preferred structure of the film comprises a plurality of carbon layers, wherein adjacent layers have different resistivities. Through selection of deposition conditions, including the energy of the depositing carbon species, the presence or absence of certain elements such as H, N, inert gases or boron, carbon layers having desired resistivities can be produced.Field emitters made according the present invention display improved electron emission characteristics in comparison to conventional field emitter materials.

Abstract translation: 一种用于冷阴极场发射应用的新型场致发射器件，包括多层电阻碳膜。 本发明的多层膜由至少两层电阻碳材料构成，优选为非晶四面体配位的碳，使得相邻层的电阻率不同。 对于来自表面的电子发射，优选的结构包括具有比底层更低的电阻率的顶层。 对于边缘发射结构，膜的优选结构包括多个碳层，其中相邻层具有不同的电阻率。 通过选择沉积条件（包括沉积碳物质的能量），可以产生具有所需电阻率的某些元素如H，N，惰性气体或硼的存在或不存在的碳层。 根据本发明制造的场致发射体与常规的场致发射体材料相比显示出改进的电子发射特性。