Abstract:
A device for stabilizing images acquired by a digital-image sensor (5) includes a motion- sensing device (15, 16, 17, 18), for detecting quantities (P, Y, Y) correlated to pitch and yaw movements of the digital-image sensor (5), and a processing unit (14), connectable to the 5 digital-image sensor (5) for receiving a first image signal (IMG) and configured for extracting a second image signal (IMG') from the first image signal (IMG) on the basis of the quantities (P, Y, Y) detected by the motion-sensing device (15, 16, 17, 18). The motion-sensing device (15, 16, 17, 18) includes a first accelerometer (15) and a second accelerometer (16).
Abstract:
Method for manufacturing electronic devices on a semiconductor substrate (1, 1a; 10, 11) with wide band gap comprising the steps of: forming a screening structure (3a, 20) on said semiconductor substrate (1, 1a; 10, 11) comprising at least a dielectric layer (2, 20) which leaves a plurality of areas of said semiconductor substrate (1, 1a; 10, 11) exposed, carrying out at least a ion implantation of a first type of dopant in said semiconductor substrate (1, 1a; 10, 11) to form at least a first implanted region (4, 40), carrying out at least a ion implantation of a second type of dopant in said semiconductor substrate (1, 1a; 10, 11) to form at least a second implanted region (6, 6c; 60, 61) inside said at least a first implanted region (4, 40), carrying out an activation thermal process of the first type and second type of dopant with low thermal budget suitable to complete said formation of said at least first and second implanted regions (4, 40; 6, 60).
Abstract:
In a process for manufacturing a MOS device: forming a semiconductor layer (23) having a first type of conductivity; forming an insulated gate structure (27) having an electrode region (25), above the semiconductor layer (23); forming body regions (37) having a second type of conductivity, within the semiconductor layer (23), laterally and partially underneath the insulated gate structure (27); forming source regions (38) having the first type of conductivity, within the body regions (37); and forming a first enrichment region (42), in a surface portion of the semiconductor layer (23) underneath the insulated gate structure (27), the first enrichment region (42) having the first type of conductivity and being set at a distance from 10 the body regions (37). In order to form the first enrichment region (42), a first enrichment window (30) is defined within the insulated gate structure (27), and first dopant species of the first type of conductivity are introduced through the first enrichment window (30) and in a way self-aligned thereto.
Abstract:
Transmission of multicast packets over a local area network (30, 40, 50) is controlled by: - identifying the condition where only a single receiver (40, 50) exists within the local area network (30, 40, 50) for a given multicast group of packets, and - allowing, upon occurrence of that condition, Automatic Repeat Request (ARQ) of the packets multicast towards said single receiver (40, 50). A preferred field of application is wireless local area networks for use in a home environment.
Abstract:
An apparatus for removing or decreasing the resin flush from the top of the metallic part of a semiconductor device is described, comprising a main reservoir and nozzles for sprinkling a solution with abrasive material suspended therein onto a semiconductor device placed in said main reservoir. Said apparatus also comprises a pressure sensor placed at the bottom of said main reservoir, a liquid level sensor associated with said main reservoir and a control unit for feeding said solution to said nozzles according to the pressure and level raised by said sensors.
Abstract:
A pointing device for a computer system includes: a first movement sensor for detecting movements of the device (1) along a first axis (X) and a second axis (Y); a second movement sensor, for detecting movements of the device (1) along a third axis (Z) not coplanar with the first and second axes (X, Y); and a processing unit (6) associated to the movement sensors for producing a plurality of movement signals (AX, AY, AZ, VX, VY, VZ, PX, PY, PZ) indicating the movement of 1the device (1) along the first, second, and third axes (X, Y, Z). The processing unit (6) includes a control stage (15), for controlling the production of the movement signals (AX, AY, AZ, VX, VY, VZ, PX, PY, PZ) on the basis of a response (SZ, AZ) of the second movement sensor (5b).
Abstract:
Instabilities and related drawbacks that arise when interruptions of a perimetral high voltage ring extension implanted regions (RHV) of a main junction (P_tub 1, (P_tub2, …) of an integrated device must be realized may be effectively prevented. This important result is achieved by an extremely simple expedient: whenever an interruption (I) of the high voltage ring extension must be created, it is not realized straight across it along a common orthogonal direction to the perimetral implanted region, on the contrary, the narrow interruption is defined obliquely or slantingly across the width of the perimetral high voltage ring extension. In case of a straight interruption, the angle of slant (α) may be generally comprises between 30 and 60 degrees and more preferably is 45 degrees or close to it. Naturally, the narrow interruption is created by masking it from dopant implantation when realizing the perimetral high voltage ring extension region.
Abstract:
A method for the estimation of the transfer function of a transmission channel in a receiving system of UMTS type envisages the computation of a plurality of channel coefficients, included among known channel coefficients corresponding to pilot symbols, through the reiteration of an interpolation algorithm, capable of calculating an intermediate point (Z, f(Z)) between a first extreme and a second extreme of a determined interval, the first extreme being formed by at least two known points and the second extreme being formed by at least one known point, the intermediate point to be calculated having as abscissa (Z) the abscissa value of the mean point between the points defining the interval rounded off to the integer closest to the first extreme, and having as ordinate (F(Z)) the arithmetic average between the ordinate of the known point of the second extreme and the ordinate of a point, chosen between the two known points of the first extreme, having a distance from the intermediate point equal to the distance between the intermediate point and the known point of the second extreme.
Abstract:
The present invention relates to the managing of lamp fault conditions in electronic ballasts for one or more gas discharge lamps. The method for fault management of electronic ballast for at least one gas discharge lamp comprises the steps of: preheating the lamp filaments applying a low current for a predetermined time; igniting the lamp by increasing at a predetermined rate the voltage applied up to a predetermined strike value; charaterised by monitoring the lamp current; repeating the steps of igniting the lamp and monitoring the lamp current for a predetermined numbers of times if the lamp current is over a predetermined threshold; powering the lamp at normal operating conditions.
Abstract:
An outstandingly effective shell (1) for a DC power supply adaptor (5) of portable apparatuses provides for an easy retrieval and orderly disposition of the DC output cable (7) and of its termination without requiring the use of separate elastic straps or similar holding means, providing for a compact assembly without any dangling part that is far more easy to pack and to handle for transportation and use than the nude adaptor (5). In addition, the shell (1) of the invention provides for a permanent resilient impact absorbing outer protection of the box-like plastic container (5) of the power supply circuitry.