公开(公告)号：US09766450B2

公开(公告)日：2017-09-19

申请号：US14872682

申请日：2015-10-01

Applicant: Jun Nakagawa ,  Tsuyoshi Hashiguchi ,  Eri Watanabe ,  Goichi Akanuma ,  Tomofumi Kitazawa

Inventor： Jun Nakagawa ,  Tsuyoshi Hashiguchi ,  Eri Watanabe ,  Goichi Akanuma ,  Tomofumi Kitazawa

IPC: G02B26/08 ,  G02B26/10 ,  H04N9/31 ,  B81B3/00

CPC classification number: G02B26/101 ,  B81B3/0045 ,  B81B2201/032 ,  B81B2201/042 ,  G02B26/0858 ,  H04N9/3129

Abstract: A light deflector is provided including a mirror unit having a light reflection plane, a movable frame to support the mirror unit, a support frame disposed to surround the movable frame, a pair of serpentine beams each disposed between the movable frame and the support frame on both sides of the movable frame to form a turning shape, each of the serpentine beams having one end attached to the support frame, and another end attached to the movable frame, and a vibration damper provided on a portion that moves due to deformation of the serpentine beams caused by application of voltage being transferred.

公开(公告)号：US09676607B2

公开(公告)日：2017-06-13

申请号：US15098089

申请日：2016-04-13

Applicant: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.

Inventor： Matthieu Gaudet ,  Klaus Schimmanz ,  Michael Stolz ,  Sergiu Langa ,  Holger Conrad ,  Bert Kaiser

IPC: H01L29/84 ,  B81B3/00

CPC classification number: B81B3/0021 ,  B81B3/0094 ,  B81B2201/032 ,  B81B2203/0118 ,  B81B2203/0127

Abstract: Micromechanical devices include actively deflectable elements. The activation is performed by a layer stack which causes the deflection responsive to attractive forces acting upon the layers of the layer stack.

公开(公告)号：US09440844B2

公开(公告)日：2016-09-13

申请号：US13854834

申请日：2013-04-01

Applicant: Semiconductor Components Industries, LLC

Inventor： Kenneth Edward Salsman

IPC: G01J1/00 ,  B81B3/00 ,  G06F3/03 ,  H01L27/146 ,  H04N5/225 ,  H04N5/33 ,  H04N9/04 ,  G01J3/02 ,  G01J3/28

CPC classification number: B81B3/0029 ,  B81B2201/032 ,  G01J3/0229 ,  G01J3/2823 ,  G06F3/0304 ,  H01L27/14629 ,  H04N5/2258 ,  H04N5/332 ,  H04N9/045

Abstract: Imaging systems may include an image sensor and a microelectromechanical systems array. The microelectromechanical systems array may be mounted over the image sensor. The system may include an infrared lens that focuses infrared light onto a first surface of the microelectromechanical systems array and a visible light source that illuminates an opposing second surface of the microelectromechanical systems array. The image sensor may capture images of the opposing second surface of the microelectromechanical systems array. The system may include processing circuitry that generates infrared images of a scene using the captured images of the microelectromechanical systems array. Microelectromechanical systems elements in the microelectromechanical systems array may change position or shape in response to infrared light that is absorbed by the microelectromechanical systems elements. Each microelectromechanical systems element may include infrared absorbing material on a metal layer. The system may include optical elements that focus visible light onto the image sensor.

Abstract translation: 成像系统可以包括图像传感器和微机电系统阵列。 微机电系统阵列可以安装在图像传感器上。 该系统可以包括将红外光聚焦到微机电系统阵列的第一表面上的红外透镜和照亮微机电系统阵列的相对的第二表面的可见光源。 图像传感器可以捕获微机电系统阵列的相对的第二表面的图像。 该系统可以包括利用微机电系统阵列的捕获图像产生场景的红外图像的处理电路。 微机电系统阵列中的微电子机械系统元件可以响应于被微机电系统元件吸收的红外光而改变位置或形状。 每个微机电系统元件可以包括在金属层上的红外吸收材料。 该系统可以包括将可见光聚焦到图像传感器上的光学元件。

公开(公告)号：US20160244323A1

公开(公告)日：2016-08-25

申请号：US15144896

申请日：2016-05-03

Applicant: Asia Pacific Microsystems, Inc.

Inventor： Jerwei Hsieh

IPC: B81B7/00

CPC classification number: B81B7/0038 ,  B81B7/0058 ,  B81B2201/032 ,  B81C1/00238 ,  B81C1/00817 ,  B81C1/00825 ,  B81C2201/053 ,  B81C2201/056 ,  B81C2203/0785

Abstract: An integrated MEMS device is provided. The integrated MEMS device comprises a circuit chip and a device chip. The circuit chip has a patterned first bonding layer disposed thereon, the bonding layer being composed of a conductive material/materials. The device chip has a first structural layer and a second structural layer, the first structural layer being connected to the second structural layer and the first bonding layer of the circuit chip, and being sandwiched between the second structural layer and the circuit chip. A plurality of hermetic spaces are enclosed by the first structural layer, the second structural layer, the first bonding layer and the circuit chip.

Abstract translation: 提供集成的MEMS器件。 集成MEMS器件包括电路芯片和器件芯片。 电路芯片具有设置在其上的图案化第一接合层，接合层由导电材料/材料构成。 器件芯片具有第一结构层和第二结构层，第一结构层连接到电路芯片的第二结构层和第一结合层，并夹在第二结构层和电路芯片之间。 第一结构层，第二结构层，第一结合层和电路芯片包围多个封闭空间。

公开(公告)号：US20160173001A1

公开(公告)日：2016-06-16

申请号：US14968635

申请日：2015-12-14

Applicant: Fraunhofer-Gesellschaft zur Foerderung der angewandten Forschung e.V.

Inventor： Sergiu Langa ,  Holger Conrad ,  Harald Schenk ,  Michael Stolz

IPC: H02N1/00 ,  B81B3/00 ,  B81C1/00

CPC classification number: H02N1/006 ,  B81B3/0021 ,  B81B2201/032 ,  B81B2203/0118 ,  B81B2203/0127

Abstract: A micromechanical device with electrostatically caused deflection by a plate capacitor extending along and spaced apart from the neutral fiber of the deflectable element is improved with regard to its manufacturing complexity and/or with regard to its operating characteristics, such as, for example, maximum voltage applicable or deflectability, by using a continuous insulation layer between the distal and proximal electrodes of the plate capacitor, or else the proximal electrode is structured so as to have gaps at the segment boundaries where the distal electrode is mechanically fixed so as to be laterally spaced apart from the distal electrode. Both procedures avoid the problems of generating a roughness of the surface of the proximal electrode facing the distal electrode, as would otherwise be necessitated by etching an insulation layer for providing spacers between the distal and proximal electrodes at the segment boundaries.

Abstract translation: 关于其制造复杂性和/或关于其工作特性（例如最大电压），改进了静电引起由可偏转元件的中性纤维延伸并间隔开的平板电容器偏转的微机械装置 通过在平板电容器的远端和近端电极之间使用连续的绝缘层，或者近端电极被构造成在末端电极被机械地固定以便横向隔开的段边界处具有间隙 远离远端电极。 两种方法避免了产生面向远端电极的近侧电极表面的粗糙度的问题，如通过在分段边界处的远端和近端电极之间蚀刻用于提供间隔物的绝缘层所必需的。

公开(公告)号：US09359193B2

公开(公告)日：2016-06-07

申请号：US14165752

申请日：2014-01-28

Applicant: Asia Pacific Microsystems, Inc.

Inventor： Jerwei Hsieh

IPC: H01L21/4763 ,  B81C1/00 ,  B81B7/00

CPC classification number: B81B7/0038 ,  B81B7/0058 ,  B81B2201/032 ,  B81C1/00238 ,  B81C1/00817 ,  B81C1/00825 ,  B81C2201/053 ,  B81C2201/056 ,  B81C2203/0785

Abstract: An integrated MEMS device and its manufacturing method are provided. In the manufacturing method, the sacrificial layer is used to integrate the MEMS wafer and the circuit wafer. The advantage of the present invention comprises preventing films on the circuit wafer from being damaged during process. By the manufacturing method, a mechanically and thermally stable structure material, for example: monocrystalline silicon and polysilicon, can be used. The integrated MEMS device manufactured can also possess the merit of planar top-surface topography with high fill factor. The manufacturing method is especially suitable for manufacturing MEMS array device.

Abstract translation: 提供集成的MEMS器件及其制造方法。 在制造方法中，牺牲层用于集成MEMS晶片和电路晶片。 本发明的优点包括防止电路晶片上的膜在加工过程中被损坏。 通过制造方法，可以使用机械和热稳定的结构材料，例如：单晶硅和多晶硅。 制造的集成MEMS器件也可以具有高填充因子的平面顶表面形貌的优点。 该制造方法特别适用于制造MEMS阵列器件。

公开(公告)号：US09193580B1

公开(公告)日：2015-11-24

申请号：US14531843

申请日：2014-11-03

Applicant: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC.

Inventor： Henry A. Sodano ,  Aneesh K. Venkata

IPC: B81B3/00 ,  B81C1/00 ,  B81C3/00

CPC classification number: B81B3/0021 ,  B81B2201/032 ,  B81C1/0019 ,  B81C3/005 ,  G01P15/0922 ,  H01L41/1136 ,  H01L41/31 ,  H02N2/18

Abstract: A nano-electromechanical system comprises piezoelectric vertically aligned BaTiO3 nanowire arrays for energy-harvesting applications, sensors, and other applications. The aligned piezoelectric nanowire arrays provide highly accurate nano-electromechanical system-based dynamic sensor with a wide operating bandwidth and unity coherence and energy harvesters at low frequencies. The growth of vertically aligned (B45-mm long) barium titanate nanowire arrays is realized through a hydrothermal synthesis.

Abstract translation: 纳米机电系统包括用于能量收集应用，传感器和其它应用的压电垂直排列的BaTiO3纳米线阵列。 对准的压电纳米线阵列提供高精度的基于纳米机电系统的动态传感器，具有宽的工作带宽和低频的单位相干和能量收集器。 通过水热合成实现垂直取向（B45-mm）钛酸钡纳米线阵列的生长。

公开(公告)号：US20150298965A1

公开(公告)日：2015-10-22

申请号：US14480051

申请日：2014-09-08

Applicant: INVENSENSE, INC.

Inventor： Julius Ming-Lin Tsai ,  Michael J. Daneman

IPC: B81B7/00 ,  B81B3/00 ,  B81C1/00

CPC classification number: B81B7/007 ,  B81B3/0029 ,  B81B2201/032 ,  B81B2207/012 ,  B81B2207/07 ,  B81C1/00182 ,  B81C1/00269 ,  B81C1/00301 ,  B81C2201/013 ,  B81C2201/019 ,  B81C2203/0109 ,  B81C2203/0792

Abstract: A micro-electro-mechanical system device is disclosed. The micro-mechanical system device comprises a first silicon substrate comprising: a handle layer comprising a first surface and a second surface, the second surface comprises a cavity; an insulating layer deposited over the second surface of the handle layer; a device layer having a third surface bonded to the insulating layer and a fourth surface; a piezoelectric layer deposited over the fourth surface of the device layer; a metal conductivity layer disposed over the piezoelectric layer; a bond layer disposed over a portion of the metal conductivity layer; and a stand-off formed on the first silicon substrate; wherein the first silicon substrate is bonded to a second silicon substrate, comprising: a metal electrode configured to form an electrical connection between the metal conductivity layer formed on the first silicon substrate and the second silicon substrate.

Abstract translation: 公开了一种微机电系统装置。 微机械系统装置包括第一硅衬底，其包括：手柄层，包括第一表面和第二表面，所述第二表面包括空腔; 沉积在手柄层的第二表面上的绝缘层; 具有结合到绝缘层的第三表面和第四表面的器件层; 沉积在器件层的第四表面上的压电层; 设置在所述压电层上的金属导电层; 设置在所述金属导电层的一部分上的接合层; 以及在所述第一硅衬底上形成的间隔件; 其中所述第一硅衬底接合到第二硅衬底，包括：金属电极，被配置为在所述第一硅衬底上形成的所述金属传导层与所述第二硅衬底之间形成电连接。

公开(公告)号：US20150274514A1

公开(公告)日：2015-10-01

申请号：US14165752

申请日：2014-01-28

Applicant: Asia Pacific Microsystems, Inc.

Inventor： Jerwei Hsieh

IPC: B81C1/00 ,  B81B7/00

CPC classification number: B81B7/0038 ,  B81B7/0058 ,  B81B2201/032 ,  B81C1/00238 ,  B81C1/00817 ,  B81C1/00825 ,  B81C2201/053 ,  B81C2201/056 ,  B81C2203/0785

Abstract: An integrated MEMS device and its manufacturing method are provided. In the manufacturing method, the sacrificial layer is used to integrate the MEMS wafer and the circuit wafer. The advantage of the present invention comprises preventing films on the circuit wafer from being damaged during process. By the manufacturing method, a mechanically and thermally stable structure material, for example: monocrystalline silicon and polysilicon, can be used. The integrated MEMS device manufactured can also possess the merit of planar top-surface topography with high fill factor. The manufacturing method is especially suitable for manufacturing MEMS array device.

Abstract translation: 提供集成的MEMS器件及其制造方法。 在制造方法中，牺牲层用于集成MEMS晶片和电路晶片。 本发明的优点包括防止电路晶片上的膜在加工过程中被损坏。 通过制造方法，可以使用机械和热稳定的结构材料，例如：单晶硅和多晶硅。 制造的集成MEMS器件也可以具有高填充因子的平面顶表面形貌的优点。 该制造方法特别适用于制造MEMS阵列器件。

公开(公告)号：US09117593B2

公开(公告)日：2015-08-25

申请号：US14071173

申请日：2013-11-04

Applicant: RF Micro Devices, Inc.

Inventor： Kushal Bhattacharjee

IPC: H03H9/46 ,  H03H9/54 ,  H01G5/18 ,  H03H9/02 ,  H03H9/24 ,  B81B3/00

CPC classification number: H01G5/18 ,  B81B3/0086 ,  B81B2201/018 ,  B81B2201/0271 ,  B81B2201/032 ,  H03H9/02275 ,  H03H9/02409 ,  H03H9/2405 ,  H03H9/2463 ,  H03H9/462 ,  H03H9/467 ,  H03H2009/241

Abstract: A MEMS device includes a substrate, one or more anchors formed on a first surface of the substrate, and a piezoelectric layer suspended over the first surface of the substrate by the one or more anchors. Notably, the piezoelectric layer is a bimorph including a first bimorph layer and a second bimorph layer. A first electrode may be provided on a first surface of the piezoelectric layer facing the first surface of the substrate, such that the first electrode is in contact with the first bimorph layer of the piezoelectric layer. A second electrode may be provided on a second surface of the piezoelectric layer opposite the substrate, such that the second electrode is in contact with the second bimorph layer of the piezoelectric layer. The second electrode may include a first conducting section and a second conducting section, which are inter-digitally dispersed on the second surface.

Abstract translation: MEMS器件包括衬底，形成在衬底的第一表面上的一个或多个锚固体和通过一个或多个锚固件悬挂在衬底的第一表面上的压电层。 值得注意的是，压电层是包括第一双晶片层和第二双晶片层的双晶片。 第一电极可以设置在面对基板的第一表面的压电层的第一表面上，使得第一电极与压电层的第一双压电晶片层接触。 第二电极可以设置在与衬底相对的压电层的第二表面上，使得第二电极与压电层的第二双压电晶片层接触。 第二电极可以包括第一导电部分和第二导电部分，其在数字上分散在第二表面上。