公开(公告)号：EP1900679A1

公开(公告)日：2008-03-19

申请号：EP07116290.3

申请日：2007-09-13

Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE

Inventor： Casset, Fabrice ,  Soulimane, Sofian

IPC: B81B3/00 ,  H01G5/16

CPC classification number: B81C1/00158 ,  B81B2203/0109 ,  B81C1/00103 ,  B81C2201/0108 ,  H01G5/011 ,  H01G5/18

Abstract: L'invention concerne un procédé de réalisation d'une couche sacrificielle, comprenant les étapes de :
- lithographie d'une résine déposée sur un substrat pour fournir un motif de résine lithographiée sur une zone de substrat, la zone ayant une taille donnée et une forme donnée, le motif occupant un volume donné,
- recuit selon un cycle thermique du motif de résine lithographiée,
le procédé étant caractérisé en ce qu'il comprend, en fonction de la résine, la détermination de la taille et de la forme de ladite zone du substrat, et la détermination du volume de la résine déposée sur ladite zone pour que le cycle thermique de recuit fournisse un profil choisi parmi l'un des profils suivants : un profil bombé planarisant et un profil en « double air gap ».

Abstract translation: 该方法包括基于热循环退火光刻树脂图案。 基于树脂确定硅衬底（20）的区域的尺寸和形状。 确定沉积在区域上的树脂的体积，使得热循环提供选自平坦化膨胀和双气隙部分中的部分，其中该部分具有用作支撑物的牺牲层以形成悬浮元件，例如， 可变电容器。 尺寸，形状和体积由元件的共振频率的定界确定，以限定将元件与区域分开的间隔。

公开(公告)号：EP1398831A3

公开(公告)日：2008-02-20

申请号：EP03255695.3

申请日：2003-09-11

Applicant: Shipley Co. L.L.C.

Inventor： Gallagher, Michael K. ,  Gronbeck, Dana A. ,  Adams, Timothy G. ,  Calvert, Jeffrey M.

IPC: H01L21/768 ,  H01L21/764 ,  H01L23/522 ,  H01L23/532

CPC classification number: B81B7/0006 ,  B81B2203/0315 ,  B81C2201/0108 ,  H01L21/764 ,  H01L21/7682 ,  H01L23/5222 ,  H01L2924/0002 ,  Y10T428/24628 ,  H01L2924/00

Abstract: A method of forming air gaps within a solid structure is provided. In this method, a sacrificial material is covered by an overlayer. The sacrificial material is then removed through the overlayer to leave an air gap. Such air gaps are particularly useful as insulation between metal lines in an electronic device such as an electrical interconnect structure. Structures containing air gaps are also provided.

公开(公告)号：EP1717195A1

公开(公告)日：2006-11-02

申请号：EP06118802.5

申请日：2002-11-08

Applicant: WiSpry, Inc.

Inventor： Cunningham, Shawn, J. ,  Tatic-Lucic, Svetlana

IPC: B81B3/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.

Abstract translation: 三层梁MEMS器件及相关方法。 根据一个实施例，提供一种制造三层梁的方法。 该方法可以包括在衬底上沉积牺牲层并在牺牲层上沉积第一导电层。 该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。 此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且通过结构层将通孔形成到第一导电微结构。 此外，该方法可以包括以下：在结构层和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 并且去除足够量的牺牲层以便将第一导电微结构与衬底分开，其中结构层在第一端由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。

公开(公告)号：EP1717194A1

公开(公告)日：2006-11-02

申请号：EP06118800.9

申请日：2002-11-08

Applicant: WiSpry, Inc.

Inventor： Cunningham, Shawn, J. ,  Tatic-Lucic, Svetlana

IPC: B81B3/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: Trilayered Beam MEMS Device and Related Methods. According to one embodiment, a method for fabricating a trilayered beam is provided. The method can include depositing a sacrificial layer on a substrate and depositing a first conductive layer on the sacrificial layer. The method can also include forming a first conductive microstructure by removing a portion of the first conductive layer. Furthermore, the method can include depositing a structural layer on the first conductive microstructure, the sacrificial layer, and the substrate and forming a via through the structural layer to the first conductive microstructure. Still furthermore, the method can include the following: depositing a second conductive layer on the structural layer and in the via; forming a second conductive microstructure by removing a portion of the second conductive layer, wherein the second conductive microstructure electrically communicates with the first conductive microstructure through the via; and removing a sufficient amount of the sacrificial layer so as to separate the first conductive microstructure from the substrate, wherein the structural layer is supported by the substrate at a first end and is freely suspended above the substrate at an opposing second end.

Abstract translation: 三层束MEMS器件及相关方法。 根据一个实施例，提供了一种用于制造三层光束的方法。 该方法可以包括在衬底上沉积牺牲层并且在牺牲层上沉积第一导电层。 该方法还可以包括通过去除第一导电层的一部分来形成第一导电微结构。 此外，该方法可以包括在第一导电微结构，牺牲层和衬底上沉积结构层，并且形成穿过结构层到达第一导电微结构的通孔。 此外，该方法可以包括以下步骤：在结构层上和通孔中沉积第二导电层; 通过去除所述第二导电层的一部分来形成第二导电微结构，其中所述第二导电微结构通过所述通孔与所述第一导电微结构电连通; 以及去除足够量的牺牲层以便将第一导电微结构与衬底分离，其中结构层在第一端处由衬底支撑并且在相对的第二端处自由地悬挂在衬底上方。

公开(公告)号：EP1551906A4

公开(公告)日：2006-11-02

申请号：EP03809104

申请日：2003-10-16

Applicant: GEORGIA TECH RES INST

Inventor： KOHL PAUL A ,  ALLEN SUEANN BIDSTRUP ,  WU XIAOQUN ,  HENDERSON CLIFFORD LEE

IPC: B81C1/00 ,  C08J3/28 ,  C08K5/00 ,  G03F7/40

CPC classification number: G03F7/004 ,  B81B2201/058 ,  B81B2203/0338 ,  B81B2203/0384 ,  B81C1/00103 ,  B81C2201/0108 ,  C08J3/28 ,  C08K5/0041 ,  G03F7/40 ,  Y10T428/24479

Abstract: Polymers, methods of use thereof, and methods of decomposition thereof, are provided. One exemplary polymer, among others, includes, a photodefinable polymer having a sacrificial polymer and a photoinitiator.

公开(公告)号：EP1454349B1

公开(公告)日：2006-09-27

申请号：EP02793902.4

申请日：2002-11-08

Applicant: WiSpry, Inc.

Inventor： CUNNINGHAM, Shawn, J. ,  TATIC-LUCIC, Svetlana

IPC: H01L21/302 ,  H01L21/4763 ,  H01P1/10 ,  H01H57/00 ,  H02B1/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: A method for fabricating a trilayered beam MEMS device includes depositing a sacrificial layer (310) on a substrate and depositing and removing a portion of a first conductive layer on the sacrificial layer (310) to form a first conductive microstructure (312); depositing a structural layer (322) on the first conductive microstructure (312); the sacrificial layer (310), and the substrate (300) and forming a via through the structural layer (322) to the first conductive microstructure (312); depositing a second conductive layer (336) on the structural layer (322) and in the via; forming a second conductive microstructure (324) by removing a portion of the second conductive layer (336), wherein the second conductive microstructure (324) electrically communicates with the first conductive microstructure (312) through the via; and removing a sufficient amount of the sacrificial layer (310) so as to separate the first conductive microstructure (312) from the substrate, wherein the structural layer (322) is supported by the substrate at a first end is freely suspended above the substrate at an opposing second end.

公开(公告)号：EP1544161A4

公开(公告)日：2005-11-02

申请号：EP03766675

申请日：2003-07-31

Applicant: NIPPON KOGAKU KK

Inventor： ISHIZUYA TOHRU

IPC: B81B3/00 ,  B81C1/00 ,  G02B6/35 ,  G02B26/08

CPC classification number: B81B3/0072 ,  B81C2201/0108 ,  G02B6/3518 ,  G02B6/3546 ,  G02B6/3572 ,  G02B6/3584 ,  G02B6/3596 ,  Y10S438/926

Abstract: A three-dimensional structure element having a plurality of three-dimensional structural bodies and capable of being uniformly formed without producing a dispersion in shape of the three-dimensional structural bodies, comprising a substrate (11) and the three-dimensional structural bodies (1) disposed in predetermined effective area (20) on the substrate (11); the three-dimensional structural bodies (1) further comprising space parts formed in the clearances thereof from the substrate (11) by removing sacrificing layers, the substrate (11) further comprising a dummy area (21) having dummy structural bodies (33) so as to surround the effective area (20), the dummy structural body (33) further comprising space parts formed in the clearances thereof from the substrate (11) by removing the sacrificing layers, whereby since the dummy area (21) is heated merely to approx. the same temperature as the effective area (20) in an ashing process for removing the sacrificing layers to prevent a temperature distribution from occurring in the effective area (20).

Abstract translation: 一种三维结构体，其具有多个三维结构体，并且能够均匀地形成而不会在三维结构体的形状上产生偏差，所述三维结构体包括基板（11）和三维结构体（1 ）设置在基板（11）上的预定有效区域（20）中，三维结构体（1）还包括通过去除牺牲层而与基板（11）形成在其间隙中的空间部分，基板（11 ）进一步包括具有虚设结构体（33）以便围绕有效区域（20）的虚设区域（21），虚设结构体（33）还包括空间部分，该空间部分由衬底（11） 去除牺牲层，由此，由于虚拟区域（21）仅被加热到大约200℃。 与灰化过程中的有效区域（20）相同的温度，以去除牺牲层以防止有效区域（20）中出现温度分布。

公开(公告)号：EP1454333A4

公开(公告)日：2005-09-21

申请号：EP02797085

申请日：2002-11-08

Applicant: CONVENTOR INC ,  TURNSTONE SYSTEMS INC

Inventor： CUNNINGHAM SHAWN J ,  DEREUS DANA R ,  SETT SUBHAM ,  TATIC-LUCIC SVETLANA

IPC: B81B3/00 ,  B81B7/00 ,  H01H1/04 ,  H01H1/50 ,  H01H59/00 ,  H01H61/04 ,  H01L21/302 ,  H01L23/373 ,  H01L23/522 ,  H01L27/12 ,  H01L29/86 ,  H02N1/00 ,  H02N10/00

CPC classification number: B81B3/0024 ,  B81B3/0051 ,  B81B2201/014 ,  B81B2201/018 ,  B81B2203/0118 ,  B81B2203/04 ,  B81B2207/07 ,  B81C1/0015 ,  B81C2201/0107 ,  B81C2201/0108 ,  B81C2201/0109 ,  H01H1/04 ,  H01H1/504 ,  H01H59/0009 ,  H01H61/04 ,  H01H2001/0042 ,  H01H2001/0063 ,  H01H2001/0089 ,  H01H2059/0072 ,  H01H2061/006 ,  H01L23/3735 ,  H01L23/522 ,  H01L27/1203 ,  H01L2924/0002 ,  H01L2924/09701 ,  H02N1/006 ,  H02N10/00 ,  Y10T29/49222 ,  H01L2924/00

Abstract: A movable, trilayered microcomponent (108) suspended over a substrate (102) is provided and includes a first electrically conductive layer (116) patterned to define a movable electrode (114). The first metal layer (116) is separated from the substrate (102) by a gap. The microcomponent (108) further includes a dielectric layer formed (112) on the first metal layer (116) and having an end fixed with respect to the substrate (102). Furthermore, the microcomponent (102) includes a second electrically conductive layer (120) formed on the dielectric layer (112) and patterned to define an electrode interconnect (124) for electrically communicating with the movable electrode (114).

公开(公告)号：EP1567580A2

公开(公告)日：2005-08-31

申请号：EP03768557.5

申请日：2003-10-31

Applicant: GEORGIA TECH RESEARCH CORPORATION

Inventor： KOHL, Paul, A. ,  ALLEN, SueAnn, Bidstrup ,  HENDERSON, Clifford, Lee ,  JAYACHANDRAN, Joseph, Paul ,  REED, Hollie ,  WHITE, Celesta, E.

IPC: C08J3/28 ,  G03C1/76 ,  G03C1/795 ,  G03C5/00 ,  G03C5/56

CPC classification number: B81C1/00476 ,  B81C2201/0108 ,  H01L21/7682 ,  Y10S430/114

Abstract: Polymers, methods of use thereof, and methods of decomposition thereof, are provided. One exemplary polymers, among others, includes, a composition having a sacrificial polymer and a pthotoacid generator.

公开(公告)号：EP1551906A2

公开(公告)日：2005-07-13

申请号：EP03809104.7

申请日：2003-10-16

Applicant: Georgia Tech Research Corporation

Inventor： KOHL, Paul, A. ,  ALLEN, SueAnn, Bidstrup ,  WU, Xiaoqun ,  HENDERSON, Clifford, Lee

IPC: C08J3/28

CPC classification number: G03F7/004 ,  B81B2201/058 ,  B81B2203/0338 ,  B81B2203/0384 ,  B81C1/00103 ,  B81C2201/0108 ,  C08J3/28 ,  C08K5/0041 ,  G03F7/40 ,  Y10T428/24479

Abstract: Polymers, methods of use thereof, and methods of decomposition thereof, are provided. One exemplary polymer, among others, includes, a photodefinable polymer having a sacrificial polymer and a photoinitiator.