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    FABRICATION OF SEMICONDUCTOR DEVICES WITH AIR GAPS FOR ULTRA LOW CAPACITANCE INTERCONNECTION STRUCTURES
    3.
    发明申请
    FABRICATION OF SEMICONDUCTOR DEVICES WITH AIR GAPS FOR ULTRA LOW CAPACITANCE INTERCONNECTION STRUCTURES 审中-公开
    具有超低容量互连结构的空气电阻半导体器件的制造

    公开(公告)号：WO0219420A3

    公开(公告)日：2003-05-15

    申请号：PCT/US0127224

    申请日：2001-08-31

    Applicant: GEORGIA TECH RES INST

    Inventor： KOHL PAUL ALBERT ,  ALLEN SUE ANN BIDSTRUP ,  HENDERSON CLIFFORD LEE ,  REED HOLLIE ANNE ,  BHUSARI DHANANJAY M

    IPC: H01L21/768

    CPC classification number: H01L21/7682

    Abstract: A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a sacrificial material (110, 118) is used to occupy a closed interior volume in a semiconductor structure is disclosed. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, in one embodiment by diffusion, through an overcoat layer (114, 120). The decomposition of the sacrificial material leaves an air gap or gaps (116, 122) at the closed interior volume previously occupied by the sacrificial material. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween. Also disclosed are methods of forming multi-level air gaps and methods or forming over-coated conductive line or leads wherein a portion of the overcoating is in contact with at least one air gap.

    Abstract translation: 在固体结构和特别是半导体结构内形成气隙或间隙的方法，以减少诸如金属线的电气元件之间的电容耦合，其中牺牲材料（110,118）用于占据半导体结构中的封闭内部体积的方法是 披露。 使牺牲材料分解成一种或多种气态分解产物，在一个实施方案中，通过扩散将其去除，通过外涂层（114,120）。 牺牲材料的分解在预先被牺牲材料占据的封闭内部空间处留下气隙或间隙（116,122）。 气隙可以设置在电引线之间，以最小化它们之间的电容耦合。 还公开了形成多层气隙的方法和方法或形成过涂层的导电线或导线，其中外涂层的一部分与至少一个气隙接触。

    Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same
    7.
    发明专利
    Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnections and methods of making same 未知

    公开(公告)号：AU8861601A

    公开(公告)日：2002-03-13

    申请号：AU8861601

    申请日：2001-08-31

    Applicant: GEORGIA TECH RES INST

    Inventor： KOHL PAUL ALBERT ,  ALLEN SUE ANN BIDSTRUP ,  HENDERSON CLIFFORD LEE ,  REED HOLLIE ANNE ,  BHUSARI DHANANJAY M

    IPC: H01L21/768

    Abstract: A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a sacrificial material is used to occupy a closed interior volume in a semiconductor structure is disclosed. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, in one embodiment by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the sacrificial material. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween. Also disclosed are methods of forming multi-level air gaps and methods or forming over-coated conductive lines or leads wherein a portion of the overcoating is in contact with at least one air gap.

    FABRICATION OF SEMICONDUCTOR DEVICES WITH AIR GAPS FOR ULTRA LOW CAPACITANCE INTERCONNECTIONS AND METHODS OF MAKING SAME
    9.
    发明专利
    FABRICATION OF SEMICONDUCTOR DEVICES WITH AIR GAPS FOR ULTRA LOW CAPACITANCE INTERCONNECTIONS AND METHODS OF MAKING SAME 未知

    公开(公告)号：MY128644A

    公开(公告)日：2007-02-28

    申请号：MYPI20014099

    申请日：2001-08-30

    Applicant: GEORGIA TECH RES INST

    Inventor： KOHL PAUL ALBERT ,  ALLEN SUE ANN BIDSTRUP ,  HENDERSON CLIFFORD LEE ,  REED HOLLIE ANNE ,  BHUSARI DHANANJAY M

    IPC: H01L21/4763 ,  H01L21/768

    Abstract: A METHOD OF FORMING AN AIR GAP OR GAPS WITHIN SOLID STRUCTURES AND SPECIFICALLY SEMICONDUCTOR STRUCTURES TO REDUCE CAPACITIVE COUPLING BETWEEN ELECTRICAL ELEMENTS SUCH AS METAL LINES, WHEREIN SACRIFICIAL MATERIAL (20) IS USED TO OCCUPY A CLOSED INTERIOR VOLUME IN A SEMICONDUCTOR STRUCTURE IS DISCLOSED. THE SACRIFICIAL MATERIAL (20) IS CAUSED TO DECOMPOSE INTO ONE OR MORE GASEOUS DECOMPOSITIOR PRODUCTS WHICH ARE REMOVED, IN ONE EMBODIMENT BY DIFFUSION, THROUGH AN OVERCOAT LAYER (24). TB DECOMPOSITION OF THE SACRIFICIAL MATERIAL (20) LEAVES AN AIR GAP OR GAPS (26) AT THE CLOSED INTERIOI VOLUME PREVIOUSLY OCCUPIED BY THE SACRIFICIAL MATERIAL (20). THE AIR GAPS MAY (26) BE DISPOS& BETWEEN ELECTRICAL LEADS TO MINIMIZE CAPACITIVE COUPLING THEREBETWEEN. ALSO DISCLOSED ARE METHODS OF FORMING MULTI-LEVEL AIR GAPS (26) AND METHODS OF FORMING OVER-COATED CONDUCTIVE LINES OR LEATH WHEREIN A PORTION OF THE OVERCOATING (24) IS IN CONTACT WITH AT LEAST ONE AIR GAP.(FIG 1D)

    10.
    发明专利
    未知

    公开(公告)号：DE60140624D1

    公开(公告)日：2010-01-07

    申请号：DE60140624

    申请日：2001-08-31

    Applicant: GEORGIA TECH RES INST

    Inventor： KOHL PAUL ALBERT ,  ALLEN SUE ANN ,  HENDERSON CLIFFORD LEE ,  KELLEHER HOLLIE ANN ,  BHUSARI DHANANJAY M

    IPC: H01L21/768

    Abstract: A method of forming an air gap or gaps within solid structures and specifically semiconductor structures to reduce capacitive coupling between electrical elements such as metal lines, wherein a sacrificial material is used to occupy a closed interior volume in a semiconductor structure is disclosed. The sacrificial material is caused to decompose into one or more gaseous decomposition products which are removed, in one embodiment by diffusion, through an overcoat layer. The decomposition of the sacrificial material leaves an air gap or gaps at the closed interior volume previously occupied by the sacrificial material. The air gaps may be disposed between electrical leads to minimize capacitive coupling therebetween. Also disclosed are methods of forming multi-level air gaps and methods or forming over-coated conductive lines or leads wherein a portion of the overcoating is in contact with at least one air gap.

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