公开(公告)号：US5608283A

公开(公告)日：1997-03-04

申请号：US269283

申请日：1994-06-29

Applicant: Jonathan C. Twichell ,  George R. Brandes ,  Michael W. Geis ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Christopher J. Curtin

Inventor： Jonathan C. Twichell ,  George R. Brandes ,  Michael W. Geis ,  John M. Macaulay ,  Robert M. Duboc, Jr. ,  Christopher J. Curtin

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/30

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319 ,  Y10T428/24124 ,  Y10T428/24198

Abstract: In one electron-emitting device, non-insulating particle bonding material (24) securely bonds electron-emissive carbon-containing particles (22) to an underlying non-insulating region (12). The carbon in each carbon-containing particle is in the form of diamond, graphite, amorphous carbon, or/and silicon carbide. In another electron-emitting device, electron-emissive pillars (22/28) overlie a non-insulating region (12). Each pillar is formed with an electron-emissive particle (22) and an underlying non-insulating pedestal (28).

Abstract translation: 在一个电子发射器件中，非绝缘粒子接合材料（24）将电子发射含碳颗粒（22）牢固地粘合到下面的非绝缘区域（12）上。 每个含碳颗粒中的碳为金刚石，石墨，无定形碳或/和碳化硅的形式。 在另一个电子发射器件中，电子发射柱（22/28）覆盖在非绝缘区（12）上。 每个柱形成有电子发射颗粒（22）和下面的非绝缘基座（28）。

公开(公告)号：US5599749A

公开(公告)日：1997-02-04

申请号：US544922

申请日：1995-10-18

Applicant: Atsuo Hattori

Inventor： Atsuo Hattori

IPC: H01J9/02 ,  H01J1/16

CPC classification number: H01J9/025 ,  H01J2201/30457 ,  H01L2924/00013

Abstract: A method of manufacturing an electric field emission type device. A recess having a tapered surface at an upper portion of the recess is provided. A sacrificial film is deposited on the substrate with the tapered recess. A sharp cusp is therefore formed on the surface of the sacrificial film over the recess. An electron emitting material film is deposited on the sacrificial film to form a fine emitter with a sharp tip. This fine emitter is exposed by etching and removing unnecessary regions under the fine emitter. This manufacturing method realizes a high performance electric field emission type device having an emitter tip with a small radius of curvature and a small apex angle.

Abstract translation: 一种制造电场发射型装置的方法。 设置有在凹部的上部具有锥形表面的凹部。 牺牲膜沉积在具有锥形凹槽的基底上。 因此，在凹部上的牺牲膜的表面上形成尖锐的尖点。 电子发射材料膜沉积在牺牲膜上以形成具有尖锐尖端的精细发射极。 该精细发射体通过蚀刻而除去精细发射体以下的不需要的区域。 该制造方法实现了具有小曲率半径和小顶角的发射极尖端的高性能电场发射型装置。

公开(公告)号：US5543684A

公开(公告)日：1996-08-06

申请号：US343262

申请日：1994-06-20

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: G09G3/22 ,  H01J1/304 ,  H01J1/316 ,  H01J9/02 ,  H01J29/08 ,  H01J31/12 ,  H01J61/067 ,  H01J63/06 ,  H01J1/30

CPC classification number: H01J1/316 ,  G09G3/22 ,  H01J1/304 ,  H01J1/3042 ,  H01J29/085 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J9/027 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/8625 ,  H01J2329/864 ,  Y10S977/891

Abstract: A field emission cathode is provided which includes a substrate and a conductive layer disposed adjacent the substrate. An electrically resistive pillar is disposed adjacent the conductive layer, the resistive pillar having a substantially flat surface spaced from and substantially parallel to the substrate. A layer of diamond is disposed adjacent the surface of the resistive pillar.

Abstract translation: 提供场发射阴极，其包括衬底和邻近衬底设置的导电层。 电阻柱设置在导电层附近，电阻柱具有与衬底间隔开并基本上平行于衬底的基本平坦的表面。 金刚石层邻近电阻柱的表面设置。

公开(公告)号：US5534743A

公开(公告)日：1996-07-09

申请号：US301473

申请日：1994-09-07

Applicant: Gary W. Jones ,  Steven M. Zimmerman

Inventor： Gary W. Jones ,  Steven M. Zimmerman

IPC: G01R33/10 ,  G02B27/00 ,  G02B27/01 ,  G02B27/22 ,  G09G3/00 ,  H01J1/304 ,  H01J3/02 ,  H01J9/02 ,  H01J9/24 ,  H01J29/02 ,  H01J29/94 ,  H01J31/12 ,  H04N5/70 ,  H04N5/74 ,  H04N13/00 ,  H01J1/02

CPC classification number: G09G3/001 ,  G01R33/10 ,  G02B27/017 ,  G02B27/0172 ,  G02B27/0176 ,  G02B27/2235 ,  H01J1/3042 ,  H01J29/028 ,  H01J29/94 ,  H01J3/022 ,  H01J31/127 ,  H01J9/025 ,  H04N13/0422 ,  H04N13/0438 ,  H04N13/044 ,  H04N13/0459 ,  H04N13/0497 ,  H04N5/7408 ,  G02B2027/0132 ,  G02B2027/0136 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2209/385 ,  H01J2329/00 ,  H01J2329/8625 ,  H01J2329/863 ,  H01J2329/864 ,  H04N13/0059 ,  H04N13/0285 ,  H04N13/0427 ,  H04N13/0456 ,  H04N5/70 ,  H04N5/7491

Abstract: A field emitter structure, comprising: a base substrate; a field emitter element on the base substrate; a multilayer differentially etched dielectric stack circumscribingly surrounding the field emitter element on the base substrate; and a gate electrode overlying the multilayer differentially etched dielectric stack, and in circumscribing spaced relationship to the field emitter element. Also disclosed are electron source devices, comprising an electron emitter element including a material selected from the group consisting of leaky dielectric materials, and leaky insulator materials, as well as electron source devices, comprising an electron emitter element including an insulator material doped with a tunneling electron emission enhancingly effective amount of a dopant species, and thin film triode devices.

Abstract translation: 一种场发射器结构，包括：基底; 基底基板上的场发射体元件; 围绕基底衬底上的场发射体元件的多层差分蚀刻介质堆叠; 以及覆盖多层差分蚀刻的电介质叠层的栅电极，并且以与外界发射极元件间隔开的关系。 还公开了电子源器件，其包括电子发射器元件，其包括选自由漏电介质材料和漏绝缘体材料组成的组的材料，以及电子源器件，其包括电子发射器元件，该电子发射器元件包括掺杂有隧道 电子发射增加有效量的掺杂物种类和薄膜三极管器件。

公开(公告)号：US5504385A

公开(公告)日：1996-04-02

申请号：US299470

申请日：1994-08-31

Applicant: Sungho Jin ,  Gregory P. Kochanski ,  John Thomson, Jr.

Inventor： Sungho Jin ,  Gregory P. Kochanski ,  John Thomson, Jr.

IPC: H01J1/304 ,  H01J9/02 ,  H01J31/12 ,  H01J1/30

CPC classification number: H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2329/00

Abstract: In accordance with the invention, a field emission device is made by disposing emitter material on an insulating substrate, applying a sacrificial film to the emitter material and forming over the sacrificial layer a conductive gate layer having a random distribution of apertures therein. In the preferred process, the gate is formed by applying masking particles to the sacrificial film, applying a conductive film over the masking particles and the sacrificial film and then removing the masking particles to reveal a random distribution of apertures. The sacrificial film is then removed. The apertures then extend to the emitter material. In a preferred embodiment, the sacrificial film contains dielectric spacer particles which remain after the film is removed to separate the emitter from the gate. The result is a novel and economical field emission device having numerous randomly distributed emission apertures which can be used to make low cost flat panel displays.

Abstract translation: 根据本发明，通过将发射极材料设置在绝缘衬底上，将牺牲膜施加到发射极材料并在牺牲层上形成具有其中孔径随机分布的导电栅极层而形成场致发射器件。 在优选的方法中，通过将掩模颗粒施加到牺牲膜，在掩模颗粒和牺牲膜上施加导电膜，然后去除掩模颗粒以显示孔的随机分布来形成栅极。 然后去除牺牲膜。 孔然后延伸到发射体材料。 在优选实施例中，牺牲膜包含介电间隔物颗粒，其在除去膜之后保留，以将发射极与栅极分离。 结果是一种新颖且经济的场致发射装置，其具有许多随机分布的发射孔，其可用于制造低成本的平板显示器。

公开(公告)号：US5473218A

公开(公告)日：1995-12-05

申请号：US251415

申请日：1994-05-31

Applicant: Curtis D. Moyer

Inventor： Curtis D. Moyer

IPC: H01J29/04 ,  H01J1/304 ,  H01J31/12 ,  H01J19/00

CPC classification number: H01J3/021 ,  H01J1/3042 ,  H01J2201/30457

Abstract: A flat, cold-cathode electron emitter including a substrate having a relatively flat surface with a low work function electron emission material layer for emitting electrons supported on the surface of the substrate. A contact conductive layer is disposed on the electron emission material layer and defines an aperture therethrough. An insulating layer is disposed on the contact conductive layer and has an aperture defined therethrough coextensive and in peripheral alignment with the aperture in the contact conductive layer and a conductive gate layer is disposed on the insulating layer. The contact conductive layer forms the field potential so that emission occurs substantially in the center of the aperture.

Abstract translation: 一种扁平的冷阴极电子发射器，包括具有相对平坦表面的基底，具有用于发射支撑在基底表面上的电子的功函数电子发射材料层。 接触导电层设置在电子发射材料层上并限定穿过其中的孔。 绝缘层设置在接触导电层上，并且具有通过共同延伸限定的孔，并且与接触导电层中的孔周边对准，并且导电栅极层设置在绝缘层上。 接触导电层形成场电位，使得发射基本上在孔的中心。

公开(公告)号：US5463269A

公开(公告)日：1995-10-31

申请号：US847444

申请日：1992-03-06

Applicant: Steven M. Zimmerman

Inventor： Steven M. Zimmerman

IPC: H01J1/304 ,  H01J9/02 ,  H01J21/10 ,  H01J1/00

CPC classification number: H01J9/025 ,  H01J21/105 ,  H01J2201/30457 ,  H01L2924/0002

Abstract: The present invention relates generally to a new integrated Vacuum Microelectronic Device (VMD) and a method for making the same. Vacuum Microelectronic Devices require several unique three dimensional structures: a sharp field emission tip, accurate alignment of the tip inside a control grid structure in a vacuum environment, and an anode to collect electrons emitted by the tip. Also disclosed is a new structure and a process for forming diodes, triodes, tetrodes, pentodes and other similar structures. The final structure made can also be connected to other similar VMD devices or to other electronic devices.

公开(公告)号：US5341063A

公开(公告)日：1994-08-23

申请号：US981958

申请日：1992-11-24

Applicant: Nalin Kumar

Inventor： Nalin Kumar

IPC: H01J1/304 ,  H01J9/02 ,  H01J1/02 ,  H01J1/14

CPC classification number: H01J1/3042 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457

Abstract: A field emitter comprising a conductive metal and a diamond emission tip with negative electron affinity in ohmic contact with and protruding above the metal. The field emitter is fabricated by coating a substrate with an insulating diamond film having negative electron affinity and a top surface with spikes and valleys, depositing a conductive metal on the diamond film, and applying an etch to expose the spikes without exposing the valleys, thereby forming diamond emission tips which protrude a height above the conductive metal less than the mean free path of electrons in the diamond film.

Abstract translation: 一种场致发射器，包括导电金属和具有负电子亲和力的金刚石发射尖端，与金属欧姆接触并在其上突出。 通过用具有负电子亲和性的绝缘金刚石膜和具有尖峰和谷的顶表面涂覆衬底，在金刚石膜上沉积导电金属以及施加蚀刻以暴露尖峰而不暴露谷来制造场致发射体，从而 形成金刚石发射尖端，其突出在导电金属之上的高度小于金刚石膜中电子的平均自由程。

公开(公告)号：US5302239A

公开(公告)日：1994-04-12

申请号：US884482

申请日：1992-05-15

Applicant: Fred L. Roe ,  Kevin Tjaden

Inventor： Fred L. Roe ,  Kevin Tjaden

IPC: G01Q70/18 ,  B81C1/00 ,  G01Q70/16 ,  H01J9/02 ,  G21K7/00

CPC classification number: G01Q70/16 ,  B82Y35/00 ,  H01J9/025 ,  H01J2201/30457

Abstract: An in situ plasma dry etching process for the formation of atomically sharp tips for use in high resolution microscopes in which i) a mask layer is deposited on a substrate, ii) a photoresist layer is patterned superjacent the mask layer at the sites where the tips are to be formed, iii) the mask is selectively removed by plasma etching, iv) after which the substrate is etched in the same plasma reacting chamber, thereby creating sharp microscope tips.

Abstract translation: 用于形成用于高分辨率显微镜的原子锋利尖端的原位等离子体干蚀刻工艺，其中i）掩模层沉积在基底上，ii）在尖端的位置处，将图案层叠在掩模层的上方， 要形成，iii）通过等离子体蚀刻选择性地除去掩模，iv）然后在相同的等离子体反应室中蚀刻衬底，从而产生尖锐的显微镜尖端。

公开(公告)号：US5283501A

公开(公告)日：1994-02-01

申请号：US732298

申请日：1991-07-18

Applicant: Xiaodong T. Zhu ,  James E. Jaskie ,  Robert C. Kane

Inventor： Xiaodong T. Zhu ,  James E. Jaskie ,  Robert C. Kane

IPC: H01J29/04 ,  H01J1/02 ,  H01J1/304 ,  H01J3/02 ,  H01J3/04 ,  H01J21/00 ,  H01J31/12 ,  H05B41/00

CPC classification number: H01J1/3042 ,  H01J3/022 ,  H01J2201/30457

Abstract: Electron devices employing electron sources including a material having a surface exhibiting a very low/negative electron affinity such as, for example, the 111 crystallographic plane of type II-B diamond. Electron sources with geometric discontinuities exhibiting radii of curvature of greater than approximately 1000.ANG. are provided which substantially improve electron emission levels and relax tip/edge feature requirements. Electron devices employing such electron sources are described including image generation electron devices, light source electron devices, and information signal amplifier electron devices.

Abstract translation: 使用电子源的电子器件包括具有非常低/负电子亲和力的表面的材料，例如II-B型金刚石的111晶体平面。 提供具有大于约1000（Aangstroem）的曲率半径的几何不连续性的电子源，其基本上改善电子发射水平并缓和尖端/边缘特征要求。 描述了使用这种电子源的电子器件，其包括图像生成电子器件，光源电子器件和信息信号放大器电子器件。