公开(公告)号：WO2005076348A1

公开(公告)日：2005-08-18

申请号：PCT/US2004/043910

申请日：2004-12-30

Applicant: LAM RESEARCH CORPORATION ,  BAILEY, Andrew, D., III ,  LOHOKARE, Shrikant, P

Inventor： BAILEY, Andrew, D., III ,  LOHOKARE, Shrikant, P

IPC: H01L21/768

CPC classification number: H01L21/32115 ,  C23G5/00 ,  H01J37/32522 ,  H01J2237/022 ,  H01L21/32136 ,  H01L21/67034 ,  H01L21/67051 ,  H01L21/6708 ,  H01L21/76838 ,  H01L21/7684

Abstract: A system and method of passivating an exposed conductive material includes placing a substrate in a process chamber and injecting a hydrogen species into the process chamber. A hydrogen species plasma is formed in the process chamber. A surface layer species is reduced from a top surface of the substrate is reduced. The reduced surface layer species are purged from the process chamber.

Abstract translation: 钝化暴露的导电材料的系统和方法包括将衬底放置在处理室中并将氢物质注入到处理室中。 在处理室中形成氢物质等离子体。 从基板的顶面减少的表面层物质减少。 还原的表面层物质从处理室中清除。

公开(公告)号：WO2004084267A2

公开(公告)日：2004-09-30

申请号：PCT/US2004/007530

申请日：2004-03-10

Applicant: LAM RESEARCH CORPORATION ,  LOHOKARE, Shrikant, P. ,  BAILEY, Andrew, D., III ,  HEMKER, David ,  COOK, Joel, M.

Inventor： LOHOKARE, Shrikant, P. ,  BAILEY, Andrew, D., III ,  HEMKER, David ,  COOK, Joel, M.

IPC: H01L

CPC classification number: H01L21/32135 ,  H01L21/32115 ,  H01L21/32136 ,  H01L21/7684

Abstract: A system and method for planarizing a patterned semiconductor substrate includes receiving a patterned semiconductor substrate. The patterned semiconductor substrate having a conductive interconnect material filling multiple of features in the pattern. The conductive interconnect material having an overburden portion. The overburden portion includes a localized non-uniformity. An additional layer is formed an the overburden portion. The additional layer and the overburden portion are planarized. The planarizing process substantially entirely removes the additional layer.

Abstract translation: 用于平坦化图案化半导体衬底的系统和方法包括接收图案化的半导体衬底。 图案化半导体衬底具有填充图案中的多个特征的导电互连材料。 导电互连材料具有覆盖层部分。 覆盖层部分包括局部不均匀性。 形成上覆层部分的附加层。 附加层和覆盖层部分被平坦化。 平坦化工艺基本上完全除去附加层。

公开(公告)号：WO2004077608A2

公开(公告)日：2004-09-10

申请号：PCT/US2004/004399

申请日：2004-02-12

Applicant: LAM RESEARCH CORPORATION ,  WILCOXSON, Mark, H. ,  BAILEY, Andrew, D., III

Inventor： WILCOXSON, Mark, H. ,  BAILEY, Andrew, D., III

IPC: H01Q

CPC classification number: H01J37/32467 ,  H01J37/321 ,  H01Q1/36 ,  H01Q7/00

Abstract: An antenna arrangement for generating an electric field inside a process chamber through a window. Generally, the antenna arrangement comprises an outer loop, comprising a first outer loop turn disposed around an antenna axis, an inner loop, comprising a first inner loop turn disposed around the antenna axis, wherein the inner loop is closer to the antenna axis than the outer loop is to the antenna axis in each azimuthal direction, and a radial connector radially electrically connecting the outer loop to the inner loop, wherein the radial connector is placed a large distance from the window.

Abstract translation: 一种用于通过窗口在处理室内产生电场的天线装置。 通常，天线装置包括外环，包括围绕天线轴设置的第一外环转向，内环，包括围绕天线轴设置的第一内环转，其中内环比天线轴更靠近天线轴 外环是在每个方位角方向上的天线轴线，以及径向连接器将外环径向电连接到内环，其中径向连接器与窗口放置很大距离。

公开(公告)号：WO0145134A9

公开(公告)日：2002-11-14

申请号：PCT/US0042174

申请日：2000-11-14

Applicant: LAM RES CORP ,  BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  KUTHI ANDRAS

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  KUTHI ANDRAS

IPC: H05H1/46 ,  C23C16/505 ,  H01J37/32 ,  H01L21/3065

CPC classification number: H01J37/32467 ,  H01J37/321

Abstract: A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.

Abstract translation: 公开了一种用等离子体处理衬底的等离子体处理装置。 该装置包括具有第一RF频率的第一RF电源和处理室。 此外，该设备包括可操作地耦合到第一RF电源并且当基板设置在处理室内以进行处理时设置在由基板限定的平面之上的基本圆形的天线。 基本上圆形的天线被配置为利用由第一RF电源产生的第一RF能量来诱导处理室内的电场。 基本上圆形的天线包括第一平面中的至少第一对同心环和在第二平面中的第二对同心环。 第一对同心环和第二对同心环彼此基本相同和对称地对准。 大致圆形天线在处理室内形成方位对称等离子体。 该装置还包括设置在天线和处理室之间的耦合窗口。 耦合窗口被配置为允许第一RF能量从天线通过到处理室的内部。 耦合窗具有第一层和第二层。 第二层被配置为基本上抑制形成在基本上圆形的天线和等离子体之间的电容耦合。 基本上圆形的天线和耦合窗口一起工作，以在衬底的表面上产生基本均匀的工艺速率。

公开(公告)号：WO0137311A3

公开(公告)日：2001-10-11

申请号：PCT/US0042158

申请日：2000-11-14

Applicant: LAM RES CORP ,  BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  BRIGHT NICOLAS

Inventor： BAILEY ANDREW D III ,  SCHOEPP ALAN M ,  BRIGHT NICOLAS

IPC: H05H1/46 ,  C23C16/507 ,  H01J37/32 ,  H01L21/205 ,  H01L21/3065

CPC classification number: H01J37/32623 ,  H01J37/32688

Abstract: A plasma confinement arrangement for controlling the volume of a plasma while processing a substrate inside a process chamber using a plasma enhanced process is disclosed. The arrangement includes a first magnetic bucket having a plurality of first magnetic elements. The first magnetic elements being configured for producing a first magnetic field inside the process chamber. The arrangement further includes a second magnetic bucket having a plurality of second magnetic elements. The second magnetic elements being configured for producing a second magnetic field inside the process chamber. The second magnetic field being configured to combine with the first magnetic field to produce a resultant magnetic field between the first magnetic bucket and the second magnetic bucket. The resultant magnetic field being configured to permit by-product gas from the processing to pass through while substantially confining the plasma within a volume defined at least by the process chamber and the resultant magnetic field.

Abstract translation: 公开了一种等离子体限制装置，用于在使用等离子体增强过程处理处理室内的衬底的同时控制等离子体的体积。 该装置包括具有多个第一磁性元件的第一磁性桶。 第一磁性元件被配置用于在处理室内产生第一磁场。 该装置还包括具有多个第二磁性元件的第二磁性桶。 第二磁性元件构造成用于在处理室内产生第二磁场。 第二磁场被配置为与第一磁场组合以在第一磁性铲斗和第二磁性铲斗之间产生合成的磁场。 所得到的磁场被配置为允许来自处理的副产物气体通过，同时基本上将等离子体限制在至少由处理室限定的体积和所得的磁场中。

公开(公告)号：WO2001045134A3

公开(公告)日：2001-06-21

申请号：PCT/US2000/042174

申请日：2000-11-14

Applicant: LAM RESEARCH CORPORATION ,  BAILEY, Andrew, D., III ,  SCHOEPP, Alan, M. ,  KUTHI, Andras

Inventor： BAILEY, Andrew, D., III ,  SCHOEPP, Alan, M. ,  KUTHI, Andras

IPC: H01J37/32

Abstract: A plasma processing apparatus for processing a substrate with a plasma is disclosed. The apparatus includes a first RF power source having a first RF frequency, and a process chamber. Further, the apparatus includes a substantially circular antenna operatively coupled to the first RF power source and disposed above a plane defined by the substrate when the substrate is disposed within the process chamber for processing. The substantially circular antenna being configured to induce an electric field inside the process chamber with a first RF energy generated by the first RF power source. The substantially circular antenna including at least a first pair of concentric loops in a first plane and a second pair of concentric loops in a second plane. The first pair of concentric loops and the second pair of concentric loops being substantially identical and symmetrically aligned with one another. The substantially circular antenna forming an azimuthally symmetric plasma inside the process chamber. The apparatus also includes a coupling window disposed between the antenna and the process chamber. The coupling window being configured to allow the passage of the first RF energy from the antenna to the interior of the process chamber. The coupling window having a first layer and a second layer. The second layer being configured to substantially suppress the capacitive coupling formed between the substantially circular antenna and the plasma. The substantially circular antenna and the coupling window working together to produce a substantially uniform process rate across the surface of the substrate.

公开(公告)号：WO2013077984A1

公开(公告)日：2013-05-30

申请号：PCT/US2012/063106

申请日：2012-11-01

Applicant: LAM RESEARCH CORPORATION ,  DHINDSA, Rahinder ,  MARAKHTANOV, Alexei ,  DELGADINO, Gerardo ,  HUDSON, Eric ,  YEN, Bi Ming ,  BAILEY, Andrew D., III

Inventor： DHINDSA, Rahinder ,  MARAKHTANOV, Alexei ,  DELGADINO, Gerardo ,  HUDSON, Eric ,  YEN, Bi Ming ,  BAILEY, Andrew D., III

IPC: H01L21/306

CPC classification number: H01J37/32091 ,  H01J37/32165

Abstract: Methods, systems, and computer programs are presented for semiconductor manufacturing are provided. One wafer processing apparatus includes: a top electrode; a bottom electrode; a first radio frequency (RF) power source; a second (RF) power source; a third (RF) power source; a fourth (RF) power source; and a switch. The first, second, and third power sources are coupled to the bottom electrode. Further, the switch is operable to be in one of a first position or a second position, where the first position causes the top electrode to be connected to ground, and the second position causes the top electrode to be connected to the fourth (RF) power source.

Abstract translation: 提供了半导体制造方法，系统和计算机程序。 一个晶片处理装置包括：顶部电极; 底部电极; 第一射频（RF）电源; 第二（RF）电源; 第三（RF）电源; 第四（RF）电源; 和开关。 第一，第二和第三电源耦合到底部电极。 此外，开关可操作为处于第一位置或第二位置中的一个位置，其中第一位置使顶部电极连接到地，并且第二位置使得顶部电极连接到第四位置（RF） 能量源。

公开(公告)号：WO2012018448A3

公开(公告)日：2012-04-05

申请号：PCT/US2011041522

申请日：2011-06-22

Applicant: LAM RES CORP ,  DHINDSA RAJINDER ,  MARAKHATNOV ALEXEI ,  BAILEY ANDREW D III

Inventor： DHINDSA RAJINDER ,  MARAKHATNOV ALEXEI ,  BAILEY ANDREW D III

IPC: H01L21/205 ,  H01L21/3065

CPC classification number: H01L21/3065 ,  C23C16/4412 ,  C23C16/45565 ,  C23C16/45574 ,  C23C16/45576 ,  C23C16/50 ,  H01J37/32091 ,  H01J37/32449 ,  H01J37/32834 ,  H01L21/31

Abstract: An electrode is exposed to a plasma generation volume and is defined to transmit radiofrequency power to the plasma generation volume, and includes an upper surface for holding a substrate in exposure to the plasma generation volume. A gas distribution unit is disposed above the plasma generation volume and in a substantially parallel orientation to the electrode. The gas distribution unit includes an arrangement of gas supply ports for directing an input flow of a plasma process gas into the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode. The gas distribution unit also includes an arrangement of through-holes that each extend through the gas distribution unit to fluidly connect the plasma generation volume to an exhaust region. Each of the through-holes directs an exhaust flow from the plasma generation volume in a direction substantially perpendicular to the upper surface of the electrode.

Abstract translation: 电极暴露于等离子体产生体积并且被限定为将射频功率传输至等离子体产生体积，并且包括用于保持暴露于等离子体产生体积的基板的上表面。 气体分配单元设置在等离子体产生容积上方并且与电极基本平行地定向。 气体分配单元包括用于将等离子体处理气体的输入流在基本上垂直于电极的上表面的方向上引导到等离子体产生体积中的气体供给端口的布置。 气体分配单元还包括通孔布置，每个通孔延伸穿过气体分配单元以将等离子体生成体积流体连接到排气区域。 通孔中的每一个引导来自等离子体产生体积的排气流在基本上垂直于电极上表面的方向上。

公开(公告)号：WO2009085238A1

公开(公告)日：2009-07-09

申请号：PCT/US2008/013954

申请日：2008-12-22

Applicant: LAM RESEARCH CORPORATION ,  FANG, Tong ,  BAILEY, Andrew, D., III ,  KIM, Yunsang ,  RIGOUTAT, Olivier ,  STOJAKOVIC, George

Inventor： FANG, Tong ,  BAILEY, Andrew, D., III ,  KIM, Yunsang ,  RIGOUTAT, Olivier ,  STOJAKOVIC, George

IPC: H01L21/3065

CPC classification number: H01L21/3065 ,  H01J37/32366 ,  H01L21/02068 ,  H01L21/02087 ,  H01L21/32136 ,  H01L21/6708

Abstract: A method of bevel edge etching a semiconductor substrate having exposed copper surfaces with a fluorine-containing plasma in a bevel etcher in which the semiconductor substrate is supported on a semiconductor substrate support comprises bevel edge etching the semiconductor substrate with the fluorine-containing plasma in the bevel etcher; evacuating the bevel etcher after the bevel edge etching is completed; flowing defluorinating gas into the bevel etcher; energizing the defluorinating gas into a defluorination plasma at a periphery of the semiconductor substrate; and processing the semiconductor substrate with the defluorination plasma under conditions to prevent discoloration of the exposed copper surfaces of the semiconductor substrate upon exposure, the discoloration occurring upon prolonged exposure to air.

Abstract translation: 在半导体衬底支撑在半导体衬底支撑体上的斜面蚀刻器中，使用具有含氟等离子体的具有暴露的铜表面的半导体衬底进行斜边蚀刻的方法包括：在半导体衬底支撑体中的含氟等离子体 斜角蚀刻机 在斜边蚀刻完成之后排空斜面蚀刻机; 将脱氟气体流入斜面蚀刻机; 在所述半导体衬底的外围将所述脱氟气体通电为脱氟等离子体; 并且在曝光时防止半导体衬底的暴露的铜表面的变色的条件下，用脱氟等离子体处理半导体衬底，在长时间暴露于空气时发生变色。

公开(公告)号：WO2008042581A3

公开(公告)日：2008-10-09

申请号：PCT/US2007078578

申请日：2007-09-14

Applicant: LAM RES CORP ,  CHEN JACK ,  BAILEY ANDREW D III ,  MOORING BEN ,  CAIN STEPHEN J

Inventor： CHEN JACK ,  BAILEY ANDREW D III ,  MOORING BEN ,  CAIN STEPHEN J

IPC: G03B15/00 ,  B08B7/00 ,  B41B17/00 ,  G01B11/00 ,  G01B11/02 ,  G01N21/00 ,  G01R31/26 ,  G03B15/02 ,  G03B15/03

CPC classification number: H01L21/681 ,  H01L21/67259 ,  H01L21/67288

Abstract: A bevel inspection module for capturing images of a substrate is provided. The module includes a rotational motor, which is attached to a substrate chuck and is configured to rotate the substrate chuck thereby allowing the substrate to revolve. The module further includes a camera and an optic enclosure, which is attached to the camera and is configured to rotate, enabling light to be directed toward the substrate. The camera is mounted from a camera mount, which is configured to enable the camera to rotate on a 180 degree plane allowing the camera to capture images of at least one of a top view, a bottom view, and a side view of the substrate. The module yet also includes a backlight arrangement, which is configured to provide illumination to the substrate, thereby enabling the camera to capture the images, which shows contrast between the substrate and a background.

Abstract translation: 提供了用于捕获衬底图像的斜角检查模块。 该模块包括旋转马达，该旋转马达连接到衬底卡盘并且被配置为旋转衬底卡盘从而允许衬底旋转。 该模块还包括照相机和光学外壳，该照相机和光学外壳连接到照相机并且被配置成旋转，使得光被引导朝向基板。 照相机从照相机安装架安装，照相机安装架被配置成使照相机能够在180度平面上旋转，从而允许照相机捕获衬底的顶视图，底视图和侧视图中的至少一个的图像。 该模块还包括背光装置，该背光装置被配置为向基板提供照明，由此使得照相机能够捕捉图像，该图像示出了基板与背景之间的对比。