Abstract:
A laser light source comprises a semiconductor laser adapted for pulsed operation, a partially transmitting wavelength selective light reflector. The semiconductor laser comprises a front facet and a back facet. The front facet and the back facet define an internal laser cavity. The internal laser cavity comprises a laser active medium. The partially transmitting wavelength selective light reflector has a peak reflectivity within a gain bandwidth of said laser active medium. The wavelength selective light reflector and the back facet define an external laser cavity. A roundtrip time of light in the external laser cavity is about 20 nanoseconds or less. A full width half maximum bandwidth of the wavelength selective light reflector is adapted to accommodate at least 12 longitudinal modes of the internal laser cavity and at least 250 longitudinal modes of the external laser cavity.
Abstract:
A high power laser source comprises a bar of laser diodes, a submount onto which said laser bar is affixed, and a cooler onto which said submount is affixed. The laser bar has a first coefficient of thermal expansion (CTE bar ), the submount has a second coefficient of thermal expansion (CTE sub ), and the cooler has a third coefficient of thermal expansion (CTE cool ), the third coefficient (CTE cool ) being higher than both said first coefficient (CTE bar ) and said second coefficient (CTE sub ). According to the invention, the second coefficient (CTE sub ) is selected lower than both the first coefficient (CTE bar ) and the third coefficient (CTE cool ), contrary to the usual approach with the CTE sub matching the CTE bar . A preferred range is CTE sub = k * CTE bar , with 0.4 sub which varies across the submount's thickness. Alternatively, the submount may consist of a single, more or less homogeneous material with a CTE sub varying across the submount's thickness. A method for making such a high power laser source includes selecting a submount whose CTE sub lies between the CTE cool of the cooler and the CTE bar of the bar of laser diodes and hard soldering the bar and the cooler to the submount.
Abstract:
A variable gain optical amplifier comprises an EDFA for amplifying optical signals at different wavelengths and a pump driver (14) for optically pumping the EDFA to provide optical gain. An input detector (2) is provided for monitoring the power Pin of input signals to the EDFA, and an output detector (3) is provided for monitoring the power Pout of output signals from the EDFA. A gain control arrangement is provided for supplying a drive signal to the pump driver 14 to control the optical gain including a feed forward arrangement (20, 21, 22, 23) for supplying a feed forward signal dependent on the monitored input power Pin, and a feed back arrangement (5, 6, 7, 8, 9, 30) for supplying a feed back signal dependent on the monitored output power Pout. In order to ensure rapid gain control the feed back arrangement comprises an adaptive proportional-integral (PI or PID) controller (30) for controlling the optical gain at a required gain set point in accordance with proportional and integral control coefficients Kp and Ki corresponding to a required gain profile, at least one of which is dynamically variable in dependence on the monitored output power Pout, the output signal from the controller (30) and the feed forward signal being added in an adder (31) to produce the drive signal for the pump driver (14).
Abstract:
An optical receiver and method of operating therefore. A photodiode converts a received optical signal to an electrical signal, which is provided to both high gain and low gain signal paths. First analog-to-digital converter ADC) circuitry is coupled to convert a high gain output signal into a first plurality of digital signals, while second ADC circuitry converts a low gain output signal into a second plurality of digital signals. A control unit is configured to monitor the amplitude of at least one of the low gain and high gain output signals. If the amplitude of the monitored signal falls below a predetermined threshold, the control unit is configured to select data provided by the first ADC circuitry. Otherwise, data provided by the second ADC circuitry is selected.
Abstract:
Transimpedance Amplifier Protection Circuits A TIA protection circuit comprises a TIA bias supply VTIA for applying a bias voltage to the TIA, an APD bias supply VAPD for applying a bias voltage to an APD connected to an input of the TIA, and TIA protection means for reducing the bias voltage applied to the APD to a safe level when the power supplied to the TIA is removed so as to protect the input of the TIA from the application of an excessive voltage. This provides fast protection against high voltages to the input stage of a CMOS-based TIA that is simple and reliable in operation. Due to space limitations and power consumption constraints in small form factor pluggable modules, such as XFP and SFP modules, the circuit must be simple, small and require very low power. Several alternative protection schemes are possible, one using a circuit in parallel with the APD bias supply and one using circuit in series with the APD bias supply. The parallel protection scheme uses a fast switch in parallel with the APD bias supply so that, when the TIA bias voltage is turned off for any reason, the protection switch will connect the APD cathode (and TIA input) to ground (0V). In the serial protection scheme the protection switch is connected between the APD and APD bias supply so that, when the TIA bias voltage is turned off for any reason, the protection switch will isolate the APD cathode from the high voltage APD bias supply.
Abstract:
An optical assembly (16) for a precision apparatus (10) includes an optical element (234) and a housing (230) that defines a housing cavity (244). The housing (230) includes a body section (238), a removable section (240) and a fastener assembly (242). The body section (238) is secured to an apparatus frame (12) of the precision apparatus (10). The removable section (240) retains the optical element (234) with the optical element (234) positioned in the housing cavity (244). The fastener assembly (242) selective secures the removable section (240) to the body section (238). With this design, the removable section (240) can be selectively removed to repair or replace the optical element (234) and the optical element (234) is supported by a rigid mechanical housing (230) so that the optical element (234) is less susceptible to long term or operating misalignments.
Abstract:
An optical device (1000) comprises a multi-mode interference (MMI) region (912), a single optical input (908), a single optical output (910), a first electrode (1010) associated with the MMI device and a second electrode (902) located or a face (914) of a semiconductor substrate (906) opposite another face on which the MMI region (912) is formed, the first electrode (1010) and the second electrode (902) being arranged to apply an electric field to the MMI region (912), thereby to cause absorption of light propagating through the MMI device. The device may be operated as an optical attenuator or an optical electro-absorption modulator (EAM). The MMI region allows the spreading of light coupled through the input (908) within the MMI region (912), thus decreasing the optical power absorption per unit area in the device and improving thereby the thermal dissipation.
Abstract:
A circuit including a pair of radio frequency signal devices to each of which are connected in parallel a respective input or output and a respective dc bias input device for biasing the respective radio frequency signal device; each dc bias input device including a radio frequency transistor and at least two different types of inductors.
Abstract:
A monitoring device for monitoring a light beam comprises a beam splitter, a photodetector and an electrical conductor member, wherein the photodetector and the electrical conductor member are located directly or indirectly on the beam splitter, and the electrical conductor member is electrically connected to the photodetector. The electrical conductor member may be a conductive track on the beam splitter or it may be a tile or other substrate carrying a conductive track or other electrical conductor. The monitoring device may be a wavelength locker for a laser.
Abstract:
Tunable external cavity lasers (510) are used in applications such as interferometry, FM spectroscopy, and optical communications equipment testing. Mode hop free high bandwidth frequency modulation operation is desired in a tunable external cavity laser. This application describes new and novel techniques for controlling the output wavelength of a tunable external cavity laser (510) while suppressing mode hop.