METHOD AND DEVICE FOR MULTISTATE INTERFEROMETRIC LIGHT MODULATION
    32.
    发明申请
    METHOD AND DEVICE FOR MULTISTATE INTERFEROMETRIC LIGHT MODULATION 审中-公开
    用于多光子干涉光调制的方法和装置

    公开(公告)号:WO2006037044A1

    公开(公告)日:2006-04-06

    申请号:PCT/US2005/034814

    申请日:2005-09-26

    Inventor: CHUI, Clarence

    Abstract: A multi-state light modulator comprises a first reflector 104. A first electrode 142 is positioned at a distance from the first reflector 104. A second reflector 14 is positioned between the first reflector 104 and the first electrode 142. The second reflector 14 is movable between an undriven position, a first driven position, and a second driven position, each having a corresponding distance from the first reflector 104. In one embodiment, the light modulator has latch electrodes 17 and 143, which hold the light modulator in a driven state. In another embodiment the latch electrodes 17 and 143 are used to alter the actuation and release thresholds of the light modulator.

    Abstract translation: 多态光调制器包括第一反射器104.第一电极142定位在离第一反射器104一定距离处。第二反射器14位于第一反射器104和第一电极142之间。第二反射器14可移动 在未驱动位置,第一驱动位置和第二驱动位置之间,每个具有与第一反射器104相对应的距离。在一个实施例中,光调制器具有锁定电极17和143,其将光调制器保持在驱动状态 。 在另一个实施例中,闩锁电极17和143用于改变光调制器的致动和释放阈值。

    METHOD OF MAKING A REFLECTIVE DISPLAY DEVICE USING THIN FILM TRANSISTOR PRODUCTION TECHNIQUES
    33.
    发明申请
    METHOD OF MAKING A REFLECTIVE DISPLAY DEVICE USING THIN FILM TRANSISTOR PRODUCTION TECHNIQUES 审中-公开
    使用薄膜晶体管生产技术制造反射式显示装置的方法

    公开(公告)号:WO2006036642A2

    公开(公告)日:2006-04-06

    申请号:PCT/US2005/033558

    申请日:2005-09-19

    Inventor: CHUI, Clarence

    CPC classification number: G02B26/001 B81B2201/047 B81C1/00333

    Abstract: MEMS devices (such as interferometric modulators) may be fabricated using thin film transistor (TFT) manufacturing techniques. In an embodiment, a MEMS manufacturing process includes identifying a TFT production line and arranging for the manufacture of MEMS devices on the TFT production line. In another embodiment, an interferometric modulator is at least partially fabricated on a production line previously configured for TFT production.

    Abstract translation: 可以使用薄膜晶体管(TFT)制造技术来制造MEMS器件(诸如干涉式调制器)。 在一个实施例中,MEMS制造工艺包括识别TFT生产线并且在TFT生产线上安排MEMS器件的制造。 在另一个实施例中,干涉式调制器至少部分地制造在先前配置用于TFT生产的生产线上。

    METHOD OF FABRICATING A FREE-STANDING MICROSTRUCTURE
    35.
    发明申请
    METHOD OF FABRICATING A FREE-STANDING MICROSTRUCTURE 审中-公开
    制作自由显示微结构的方法

    公开(公告)号:WO2006036518A2

    公开(公告)日:2006-04-06

    申请号:PCT/US2005/032331

    申请日:2005-09-09

    CPC classification number: B81C1/00142 B81B2201/042 G02B26/001

    Abstract: Provided is a MEMS device 800 comprising an integrated post and deformable layer 870. In some embodiments, the transition between the post and deformable layer comprises substantially a single arcuate or convex surface, thereby providing a mechanically robust structure. Some embodiments provide a method for fabricating a MEMS device comprising the use of a self-planarizing sacrificial material, which provides a surface conducive to the formation of a relatively uniform deformable layer thereon.

    Abstract translation: 提供了包括集成的柱和可变形层870的MEMS装置800.在一些实施例中,柱和可变形层之间的过渡基本上包括单个弓形或凸形表面,从而提供机械坚固的结构。 一些实施例提供了一种用于制造MEMS器件的方法,其包括使用自平面化牺牲材料,其提供有助于在其上形成相对均匀的可变形层的表面。

    INTERFEROMETRIC MODULATORS HAVING CHARGE PERSISTENCE
    36.
    发明申请
    INTERFEROMETRIC MODULATORS HAVING CHARGE PERSISTENCE 审中-公开
    具有充电余量的干涉仪

    公开(公告)号:WO2006036506A1

    公开(公告)日:2006-04-06

    申请号:PCT/US2005/032121

    申请日:2005-09-09

    Inventor: CHUI, Clarence

    CPC classification number: G02B26/001

    Abstract: An interferometric modulator is formed having a dielectric with charge persistence. The interferometric modulator is addressed by a method making advantageous use of the charge persistence property, wherein the interferometric modulator is pre-charged in such a way that the pre-charging is not observable to a viewer, and the actuation voltage threshold of the imod is significantly lowered. Subsequently the interferometric modulator may be actuated with a significantly lower actuation voltage, thereby saving power.

    Abstract translation: 形成具有电荷持续性的电介质的干涉式调制器。 干涉式调制器通过有利地使用电荷持续性质的方法来解决,其中干涉式调制器以预充电对观察者不可观察的方式进行预充电,并且imod的致动电压阈值为 显着降低。 随后,可以用显着较低的致动电压来致动干涉式调制器,从而节省功率。

    MEMS DEVICE HAVING DEFORMABLE MEMBRANE CHARACTERIZED BY MECHANICAL PERSISTENCE
    37.
    发明申请
    MEMS DEVICE HAVING DEFORMABLE MEMBRANE CHARACTERIZED BY MECHANICAL PERSISTENCE 审中-公开
    具有机械性能特征的可变形膜的MEMS器件

    公开(公告)号:WO2006036431A1

    公开(公告)日:2006-04-06

    申请号:PCT/US2005/030761

    申请日:2005-08-29

    CPC classification number: G02B26/001 G09G3/3466

    Abstract: An interferometric modulator is provided having a faster deformation time constant on actuation than relaxation time constant upon release from actuation. In some embodiments, apertures are formed in a mechanical membrane to decrease pressure, including liquid and/or gas pressures, on the membrane when actuated. In other embodiments, a dampening layer is disposed in close proximity above the membrane to apply greater downward pressure on the membrane and therefore slow the motion of the membrane when released from an actuated state. Other embodiments comprise structures, such as a heating element or vacuum device, to manipulate pressures above and/or below the mechanical membrane to affect the mechanical persistence of the display device.

    Abstract translation: 提供了一种干涉式调制器,其在致动时具有更快的变形时间常数,而不是从致动释放时的松弛时间常数。 在一些实施例中,在机械膜中形成孔,以在致动时减小膜上的压力,包括液体和/或气体压力。 在其它实施例中,阻尼层设置在膜附近,以便在膜上施加更大的向下的压力,并且因此在从致动状态释放时减慢膜的运动。 其他实施例包括诸如加热元件或真空装置的结构,以操纵机械膜上方和/或下方的压力以影响显示装置的机械持久性。

    CONTROLLING ELECTROMECHANICAL BEHAVIOR OF STRUCTURES WITHIN A MICROELECTROMECHANICAL SYSTEMS DEVICE
    38.
    发明申请
    CONTROLLING ELECTROMECHANICAL BEHAVIOR OF STRUCTURES WITHIN A MICROELECTROMECHANICAL SYSTEMS DEVICE 审中-公开
    控制微电子系统设备中结构的电化学行为

    公开(公告)号:WO2004026757A2

    公开(公告)日:2004-04-01

    申请号:PCT/US2003/030016

    申请日:2003-09-18

    IPC: B81B

    CPC classification number: G02B26/001 B81B3/0035

    Abstract: In one embodiment, the invention provides a method for fabricating a microelectromechanical systems device. The method comprises fabricating a first layer comprising a film having a characteristic electromechanical response, and a characteristic optical response, wherein the characteristic optical response is desirable and the characteristic electromechanical response is undesirable; and modifying the characteristic electromechanical response of the first layer by at least reducing charge build up thereon during activation of the microelectromechanical systems device.

    Abstract translation: 在一个实施例中,本发明提供一种用于制造微机电系统装置的方法。 该方法包括制造包括具有特征机电响应的薄膜和特征光学响应的​​第一层,其中特征光学响应是期望的,并且特征机电响应是不希望的; 以及通过在所述微机电系统装置的启动期间至少减少其上的电荷积累来修改所述第一层的特征机电响应。

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