公开(公告)号：JP2006185964A

公开(公告)日：2006-07-13

申请号：JP2004374988

申请日：2004-12-24

Applicant: EUDYNA DEVICES INC

Inventor： KOMATANI TSUTOMU ,  GOMI SHUNJI

IPC: H01L21/3065 ,  H01L21/338 ,  H01L29/778 ,  H01L29/812 ,  H01S5/183 ,  H01S5/323

Abstract: PROBLEM TO BE SOLVED: To provide a GaN system and an SiC system semiconductor device which suppresses the variation in the initial characteristics and the energization degradation. SOLUTION: An etching gas used for plasma etching enters the surface of a semiconductor crystal 12 in the ionized state from the opening of a mask material 13 so as to etch the semiconductor crystal 12 to the extent of only a predetermined depth. Nitrogen gas mixed in the etching gas is given high energy so as to be activated. It reacts with the atom of the semiconductor crystal 12 of an etching side and a wall surface so that nitrogen termination fixation of the bond is carried out. The composition of a surface layer where the nitrogen termination fixation is carried out, for example, becomes Ga x N y when the semiconductor crystal 12 is a GaN system crystal, and when it is an SiC system crystal, it becomes Si x N y so that an ultra thin nitride film is formed, and chemical stabilization is attained. On such a crystal face where nitrogen termination fixation is carried out, the corrosion (oxidization) by moisture or oxygen does not advance even in the case of energization to a device, so that the variation in the initial characteristics of a semiconductor device and energization degradation is controlled, and as a result reliability is improved. COPYRIGHT: (C)2006,JPO&NCIPI

公开(公告)号：JP2006074069A

公开(公告)日：2006-03-16

申请号：JP2005327267

申请日：2005-11-11

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： WATANABE TAKAYUKI ,  ITO HIROAKI ,  FUJII TAKUYA

IPC: H01S5/227 ,  H01L21/308

Abstract: PROBLEM TO BE SOLVED: To planarize a step formed accompanied by the growth of an InP layer. SOLUTION: Wet etching is applied to the grown InP layer using an etchant containing at least a hydrochloric acid and an acetic acid. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：平坦化伴随着InP层的生长形成的台阶。 解决方案：使用至少含有盐酸和乙酸的蚀刻剂对生长的InP层进行湿蚀刻。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005317684A

公开(公告)日：2005-11-10

申请号：JP2004132124

申请日：2004-04-27

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： KOMATANI TSUTOMU

IPC: H01L21/3065 ,  H01L21/00 ,  H01L21/306 ,  H01L21/311 ,  H01L21/335 ,  H01L21/338 ,  H01L29/20 ,  H01L29/778 ,  H01L29/812

CPC classification number: H01L29/66462 ,  H01L21/30621 ,  H01L21/31116 ,  H01L29/2003

Abstract: PROBLEM TO BE SOLVED: To provide a dry etching method by which the occurrence of damages when dry etching is executed to a GaN system semiconductor layer can be suppressed.
SOLUTION: At least two-stage etching processing is adopted when dry etching is executed to an etching layer 12 (a layer as an etching target) provided in contact with a GaN system semiconductor crystal layer 11, that is, the first process, in which at first the etching layer 12 is subjected to high-speed (high-energy) etching in its depthwise direction by using a fluorine system gas of SF
6 or NF
3 singulary or a mixed gas of the fluorine system gas and a chlorine system gas of any one of SiCl
4 , BCl
3 or Cl
2 , and the second process in which the remaining depth directional region is subjected to low-speed (low-energy) etching. Therefore, damages to the GaN system semiconductor crystal layer 11 can be reduced. It is also possible to contribute to the realization of a GaN system semiconductor device without fluctuations of initial characteristics and degradation in conductivity.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：提供可以抑制对GaN系半导体层进行干蚀刻时的损伤发生的干式蚀刻方法。 解决方案：当对与GaN系半导体晶体层11接触设置的蚀刻层12（作为蚀刻对象的层）进行干法蚀刻时，至少采用两阶段蚀刻处理，即第一工序 ，其中首先通过使用SF 6 或NF 3 一种或氟体系气体和SiCl 4 SBB，BCl 3，SB 3或Cl SB 2中任一种的氯系气体的混合气体， 以及剩余深度方向区域进行低速（低能量）蚀刻的第二工序。 因此，能够降低GaN系半导体晶体层11的损伤。 也可以有助于实现GaN系统半导体器件，而不会引起初始特性的波动和导电性的劣化。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005294885A

公开(公告)日：2005-10-20

申请号：JP2004102414

申请日：2004-03-31

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： NAKANO HIROSHI ,  HIRACHI YASUTAKA

IPC: H01Q21/28 ,  H01Q1/52 ,  H04B1/38

Abstract: PROBLEM TO BE SOLVED: To provide a radio module capable of preventing radio interference such as crosstalk, even if a transmitter and transmission antenna and a receiver and receiving antenna are used in the same case. SOLUTION: The radio module 10 is used which is provided with a transmitter 14a and a receiver 14b; a plane antenna substrate 12 for mounting the transmitter 14a and the receiver 14b, having an antenna surface on the surface and having a first antenna 13a to be connected to any one of the transmitter 14a and the receiver 14b; and a second antenna 13b connected to the other of the transmitter 14a and the receiver 14b, and directed to the same direction as that of the first antenna surface and provided with a height different from that of the first antenna surface 13a. COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：即使在相同的情况下使用发射机和发射天线以及接收机和接收天线，也提供能够防止串扰等无线电干扰的无线电模块。 解决方案：使用无线电模块10，其设置有发射机14a和接收机14b; 用于安装发射器14a和接收器14b的平面天线基板12，在表面上具有天线表面，并且具有要连接到发射器14a和接收器14b中的任一个的第一天线13a; 以及连接到发射器14a和接收器14b中的另一个的第二天线13b，并且指向与第一天线表面相同的方向，并且具有与第一天线表面13a的高度不同的高度。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005294584A

公开(公告)日：2005-10-20

申请号：JP2004108508

申请日：2004-03-31

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： OTAKE FUMIO

IPC: H01L21/266 ,  H01L21/336 ,  H01L29/08 ,  H01L29/36 ,  H01L29/78

CPC classification number: H01L29/66659 ,  H01L21/266 ,  H01L29/0847 ,  H01L29/36 ,  H01L29/402 ,  H01L29/7835

Abstract: PROBLEM TO BE SOLVED: To realize high breakdown voltage of a semiconductor device having an offset region, and suppress deterioration of device property resulting from hot electron implantation.
SOLUTION: A channel region 103, the offset region 104, a drain region 105 and a source region 106 are formed on a surface region of an epitaxial layer 102. The offset region 104 is equipped with three regions different in impurity concentration. The first offset region 104a extending from a gate end and the third offset region 104c extending from a drain end have uniform donor concentration distribution, respectively. At a part between the above regions, the second offset region 104b is arranged whose impurity concentration changes gently. Gradual concentration distribution is made in which a discontinuous part of spatial variation of impurity concentration in the offset region 104 is eliminated, and rapid variation of Fermi level in the offset region 104 is not generated by the above method, so that flexure of energy band is restrained.
COPYRIGHT: (C)2006,JPO&NCIPI

Abstract translation: 要解决的问题：为了实现具有偏移区域的半导体器件的高击穿电压，并且抑制由热电子注入引起的器件特性的劣化。 解决方案：沟道区域103，偏移区域104，漏极区域105和源极区域106形成在外延层102的表面区域上。偏移区域104配备有不同于杂质浓度的三个区域。 从栅极端延伸的第一偏移区域104a和从漏极端延伸的第三偏移区域104c分别具有均匀的施主浓度分布。 在上述区域之间的部分，排列第二偏移区域104b，其杂质浓度变化缓慢。 进行逐渐浓度分布，其中消除偏移区域104中的杂质浓度的空间变化的不连续部分，并且通过上述方法不产生偏移区域104中的费米能级的快速变化，使得能带的弯曲为 内敛。 版权所有（C）2006，JPO＆NCIPI

公开(公告)号：JP2005130521A

公开(公告)日：2005-05-19

申请号：JP2004342903

申请日：2004-11-26

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： NAKANO HIROSHI ,  HIRACHI YASUTAKA

IPC: H04B1/26 ,  H04B1/04 ,  H04J1/00

Abstract: PROBLEM TO BE SOLVED: To provide a transmitter capable of performing high-accuracy and high-stability radio communication.
SOLUTION: A transmitter 10 mixes a first signal wave of an information signal and a second signal wave of a non-modulated wave with a carrier signal and transmits the first signal wave and the second signal wave at radio frequencies. A receiver 20 mixes radio frequencies of the first signal wave and the second signal wave. At the end of the receiver 20, Δf component including frequency deviation and phase noises are canceled, and such unstable components at the end of the transmitter 10 are removed, so that information is extracted.
COPYRIGHT: (C)2005,JPO&NCIPI

Abstract translation: 要解决的问题：提供能够执行高精度和高稳定性的无线电通信的发射机。 解决方案：发射机10将信息信号的第一信号波和非调制波的第二信号波与载波信号进行混合，并以射频发射第一信号波和第二信号波。 接收机20混合第一信号波和第二信号波的射频。 在接收机20的末端，消除包括频率偏差和相位噪声的Δf分量，并且去除发送器10的端部处的这种不稳定的分量，从而提取信息。 版权所有（C）2005，JPO＆NCIPI

公开(公告)号：TW200845615A

公开(公告)日：2008-11-16

申请号：TW097110754

申请日：2008-03-26

Applicant: 優迪那半導體有限公司 EUDYNA DEVICES INC.

Inventor： 米田昌博 YONEDA, YOSHIHIRO ,  山日龍二 YAMABI, RYUJI

IPC: H04B

CPC classification number: H01L25/167 ,  G02B6/4257 ,  H01L31/02161 ,  H01L31/105 ,  H01L2924/0002 ,  H01S5/02252 ,  H01S5/02284 ,  H01S5/0264 ,  H01L2924/00

Abstract: 一種光學半導體模組,包含:一發光元件;一光接收元件在其一頂面與一側面上具有一光接收面,且該光接收面有一防反射膜形成於其上;及一安裝單元具有該發光元件和該光接收元件以一位置關係安裝其上,而使由該發光元件發出的光會至少光學性連接於該光接收元件之側面的光接收面上。

Abstract in simplified Chinese: 一种光学半导体模块,包含:一发光组件;一光接收组件在其一顶面与一侧面上具有一光接收面,且该光接收面有一防反射膜形成于其上;及一安装单元具有该发光组件和该光接收组件以一位置关系安装其上,而使由该发光组件发出的光会至少光学性连接于该光接收组件之侧面的光接收面上。

公开(公告)号：JP2009231591A

公开(公告)日：2009-10-08

申请号：JP2008076052

申请日：2008-03-24

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： SOEJIMA REIKO ,  YUI KEIICHI ,  HORINO KAZUHIKO ,  ANAYAMA CHIKASHI

IPC: H01L33/06 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40

Abstract: PROBLEM TO BE SOLVED: To improve ESD susceptibility related with a method for manufacturing a light emitting element. SOLUTION: The method for manufacturing a light emitting element has a process to form an MQW active layer 24 including a process to form a well layer 21 composed of a nitride semiconductor layer, a process to form a barrier layer 23 using a carrier gas containing hydrogen of the ratio of 2% or more to nitride and a total flow rate of carrier gas on the well layer 21. Since the barrier layer 23 in the MQW active layer 24 is made to grow using the carrier gas containing hydrogen of the ratio of 2% or more to the nitride and the total flow rate of carrier gas, it is possible to improve the ESD susceptibility. COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 解决的问题：提高与发光元件的制造方法相关的ESD敏感度。 解决方案：用于制造发光元件的方法具有形成MQW有源层24的工艺，其包括形成由氮化物半导体层构成的阱层21的工艺，使用载体形成阻挡层23的工艺 含有比例为氮化物的2％以上的氢的气体和阱层21上的载气的总流量。由于MQW活性层24中的阻挡层23使用含有氢的载气， 比例为氮化物的2％以上和载气的总流量，可以提高ESD敏感性。 版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009231348A

公开(公告)日：2009-10-08

申请号：JP2008071655

申请日：2008-03-19

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： YAMAJI KAZUHIRO

IPC: H01S5/022

CPC classification number: G02B6/4201 ,  G02B6/4269 ,  H01L2224/48091 ,  H01S5/02248 ,  H01S5/02276 ,  H01S5/02284 ,  H01S5/02415 ,  H01S5/02469 ,  H01S5/02476 ,  H01S5/0683 ,  H01L2924/00014

Abstract: PROBLEM TO BE SOLVED: To provide an optical semiconductor device for improving cooling efficiency of an optical semiconductor element.
SOLUTION: The optical semiconductor device includes an optical semiconductor element 14, a stem 50 having a through-hole 52, a wiring block 30 having an insulator 36 inserted into the through-hole 52 to have a non-contact part 54 at a part of the internal surface of the through-hole and a wire 34 for transmitting an input signal or an output signal to the optical semiconductor element 14 supported with the insulator, and a heat sink 62 fixed to the stem 50 for radiating heat generated by the optical semiconductor element 10 to the stem 50.
COPYRIGHT: (C)2010,JPO&INPIT

Abstract translation: 解决的问题：提供一种用于提高光半导体元件的冷却效率的光半导体装置。 解决方案：光学半导体器件包括光学半导体元件14，具有通孔52的杆50，布置块30，其具有插入到通孔52中的绝缘体36，以使非接触部54在 通孔的内表面的一部分和用于将输入信号或输出信号传输到由绝缘体支撑的光半导体元件14的导线34以及固定到杆50的散热器62，用于散热由 光学半导体元件10连接到杆50.版权所有（C）2010，JPO＆INPIT

公开(公告)号：JP2009026968A

公开(公告)日：2009-02-05

申请号：JP2007188880

申请日：2007-07-19

Applicant: Eudyna Devices Inc ,  ユーディナデバイス株式会社

Inventor： MACHIDA TOYOTOSHI ,  ISHIKAWA TSUTOMU ,  TANAKA HIROKAZU

IPC: H01S5/0687

CPC classification number: H01S5/024 ,  H01S5/02415 ,  H01S5/0261 ,  H01S5/0265 ,  H01S5/0612 ,  H01S5/0617 ,  H01S5/06256 ,  H01S5/06804 ,  H01S5/0683 ,  H01S5/0687

Abstract: PROBLEM TO BE SOLVED: To provide a method of controlling a semiconductor laser in which desired optical characteristics can be obtained even if the heater has deteriorated.
SOLUTION: The method controls a semiconductor laser (10) having a wavelength-selection portion (11) whose refractive index is controllable with a heater (14). The method includes: a starting sequence having a first step for adjusting the heat value of the heater until it reaches a given value; and a wavelength control sequence having a second step for correcting the wavelength of the semiconductor laser according to the detection result of the oscillation wavelength of the semiconductor laser after the starting sequence.
COPYRIGHT: (C)2009,JPO&INPIT

Abstract translation: 要解决的问题：提供一种控制半导体激光器的方法，其中即使加热器已经劣化，也可以获得期望的光学特性。 解决方案：该方法控制具有可由加热器（14）控制的折射率的波长选择部分（11）的半导体激光器（10）。 该方法包括：启动顺序，具有用于调节加热器的热值直到达到给定值的第一步骤; 以及波长控制序列，其具有根据所述半导体激光器在所述起始序列之后的振荡波长的检测结果来校正所述半导体激光器的波长的第二步骤。 版权所有（C）2009，JPO＆INPIT