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公开(公告)号:WO2020200809A1
公开(公告)日:2020-10-08
申请号:PCT/EP2020/057612
申请日:2020-03-19
Applicant: FREC'N'SYS
Inventor: BALLANDRAS, Sylvain , GARCIA, Julien
Abstract: The present invention relates to an interrogation device (20) for interrogating an acoustic wave sensor (10), comprising a transmission antenna (21) configured for transmitting an interrogation radiofrequency signal to the acoustic wave sensor; a reception antenna (22) configured for receiving a response radiofrequency signal from the acoustic wave sensor; and a processing means (24) configured for determining the in-phase components I and the quadrature components Q of the received response radiofrequency signal in each of N consecutive frames of the response radiofrequency signal, N being an integer larger than 1, wherein each of the N frames comprises X sampling points; determining the moduli IYI of each of the pairs of the determined in-phase components I and the quadrature components Q; determining a first norm M based on the determined moduli IYI; determining a first weighting function W based on the determined first norm M and the determined moduli IYI; determining the in-phase components I and the quadrature components Q of an N+1th frame of the received response radiofrequency signal, the N+1th frame comprising X sampling points of the received response radiofrequency signal; determining the moduli JYJ of each of the pairs of the determined in-phase components I and the quadrature components Q of the N+1th frame; and applying the first weighting function W to the determined moduli JYJ of the received response radiofrequency signal in the N+1th frame to obtain weighted moduli Y w of the received response radiofrequency signal for the N+1th frame.
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公开(公告)号:WO2019185363A1
公开(公告)日:2019-10-03
申请号:PCT/EP2019/056436
申请日:2019-03-14
Applicant: FREC'N'SYS
Inventor: BALLANDRAS, Sylvain , LAROCHE, Thierry
Abstract: The invention relates to a surface acoustic wave device comprising a base substrate (206, 606), a piezoelectric layer (204, 304, 610) and an electrode layer (208, 608) in between the piezoelectric layer (204, 304, 610) and the base substrate (206, 606), a comb electrode (210, 612) formed on the piezoelectric layer (204, 304, 610) comprising a plurality of electrode means (212, 614) with a pitch p, defined asp=A ,with A being the wavelength of the standing acoustic wave generated by applying opposite potentials to said electrode layer (208, 608) and comb electrode (210, 612), wherein said piezoelectric layer (204, 304, 610) comprises at least one region (216, 616) located in between the electrode means (212, 614), in which at least one physical parameter is different compared to the region (218, 624) underneath the electrode means (212, 614). The invention relates also to a method of fabrication for such surface acoustic wave device. The physical parameter may be thickness, elasticity, doping concentration of Ti or number or protons obtained by proton exchange.
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公开(公告)号:WO2022069573A2
公开(公告)日:2022-04-07
申请号:PCT/EP2021/076840
申请日:2021-09-29
Applicant: FREC'N'SYS
Inventor: BALLANDRAS, Sylvain , COURJON, Emilie , BERNARD, Florent , LAROCHE, Thierry , GARCIA, Julien , CLAIRET, Alexandre
IPC: H03H9/02 , H03H9/145 , H03H9/02559 , H03H9/02566 , H03H9/02574 , H03H9/0259 , H03H9/02637 , H03H9/02653 , H03H9/14538 , H03H9/14541
Abstract: The invention relates to a surface acoustic wave (SAW) device comprising an interdigitated transducer structure (102, 252) and at least one acoustic wave reflective structure (104, 106, 254, 256) provided on or in an acoustic wave propagating substrate (114, 114') characterized in that the interdigitated transducer structure (102) comprises a first material and the at least one acoustic wave reflective structure (104, 106) comprises a second material different from the first material and/or the acoustic wave reflective structure (104, 106) and the interdigitated transducer structure (102) have different geometrical parameters. The invention relates further to a sensor comprising a SAW device as described previously and to a method for manufacturing a SAW device comprising at least one acoustic wave reflective structure.
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公开(公告)号:WO2020021029A4
公开(公告)日:2020-01-30
申请号:PCT/EP2019/070082
申请日:2019-07-25
Applicant: FREC'N'SYS
Inventor: BALLANDRAS, Sylvain , LAROCHE, Thierry
Abstract: The invention relates to a coupled cavity filter structure, using a surface acoustic wave, in particular a guided surface acoustic wave, comprising an acoustic wave propagating substrate (102), at least one input transducer structure (112) and one output transducer structure (114), provided over the substrate (102), each comprising inter-digitated comb electrodes (124, 126), one reflecting structure (116), said reflecting structure (116) comprising at least one or more metallic strips (114), positioned at a distance and in between the input and output transducer structures (112, 114), in the direction of propagation of an acoustic wave, characterised in that the acoustic wave propagation substrate (102) is a composite substrate comprising a base substrate (106) and a piezoelectric layer (104).The invention relates also to a coupled cavity filter structure wherein the one reflecting structure (816) comprises a groove(822). The invention relates also to a SAW ladder filter device comprising at least two coupled cavity filter structures as described previously,wherein the at least two coupled cavity filter structures are positioned on a single line.
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公开(公告)号:WO2019185415A1
公开(公告)日:2019-10-03
申请号:PCT/EP2019/056933
申请日:2019-03-20
Applicant: FREC'N'SYS
Inventor: BALLANDRAS, Silvain , BERNARD, Florent , COURJOU, Emilie
Abstract: The invention relates to a surface acoustic wave device using a longitudinally polarized guided wave comprising a composite substrate (7) comprising a piezoelectric layer (11) formed over a base substrate (9), wherein the crystalline orientation of the piezoelectric layer (11) with respect to the base substrate (9) is such that, the phase velocity of the longitudinally polarized wave is below the critical phase velocity of the base substrate (9) at which wave guiding within the piezoelectric layer (11) vanishes. The invention relates also to a method of fabrication of such surface acoustic wave device.
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公开(公告)号:TWI697204B
公开(公告)日:2020-06-21
申请号:TW108111025
申请日:2019-03-28
Applicant: 法商佛雷克恩股份有限公司 , FREC'N'SYS
Inventor: 巴朗德拉 塞爾凡 , BALLANDRAS, SYLVAIN , 拉若許 蒂埃里 , LAROCHE, THIERRY
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公开(公告)号:EP4025888A1
公开(公告)日:2022-07-13
申请号:EP20764688.6
申请日:2020-09-04
Applicant: Frec'n'sys
Inventor: BALLANDRAS, Sylvain , COURJON, Emilie , BERNARD, Florent , LAROCHE, Thierry , GARCIA, Julien
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公开(公告)号:EP4025904A1
公开(公告)日:2022-07-13
申请号:EP20775821.0
申请日:2020-09-04
Applicant: Frec'n'sys , Soitec
Inventor: BALLANDRAS, Sylvain , COURJON, Emilie , BERNARD, Florent , LAROCHE, Thierry , GARCIA, Julien
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公开(公告)号:WO2022184833A1
公开(公告)日:2022-09-09
申请号:PCT/EP2022/055415
申请日:2022-03-03
Applicant: FREC'N'SYS
Inventor: BALLANDRAS, Sylvain , LAROCHE, Thierry , GARCIA, Julien , COURJON, Emilie
Abstract: The present invention relates to an acoustic wave sensor device (20, 30, 40, 50, 60, 70, 5 80, 90), comprising a quartz material layer surface; arranged along a first axis, a first interdigitated transducer (T1) formed over the planar surface of the quartz material layer, a first reflection structure (M1) formed over the planar surface of the quartz material layer, and a second reflection structure (M2) formed over the planar surface of the quartz material layer; and arranged along a second axis, a second interdigitated transducer (T2) formed over the planar surface of the quartz material layer, a third reflection structure (M3) formed over the planar surface of the quartz material layer, and a fourth reflection structure (M4) formed over the planar surface of the quartz material layer; and wherein the first axis and the second axis are inclined to each other by a finite angle.
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公开(公告)号:WO2022184815A1
公开(公告)日:2022-09-09
申请号:PCT/EP2022/055371
申请日:2022-03-03
Applicant: FREC'N'SYS
Inventor: BALLANDRAS, Sylvain , LAROCHE, Thierry , GARCIA, Julien , COURJON, Emilie
Abstract: The present invention relates to an acoustic wave sensor device (31 a, 32a, 31 b, 32b) comprising a first interdigitated transducer (T, T1), a first reflection structure (Ml), a second reflection structure (M2), a first resonance cavity (Rl) comprising a first upper surface and formed between the first interdigitated transducer (T, T1) and the first reflection structure (Ml), and a second resonance cavity (R2) comprising a second upper surface and formed between the first interdigitated transducer (T, T1) and the second reflection structure (M2), and wherein at least one of the first and second upper surfaces is covered at least partly by a metallization layer or a passivation layer. The present invention relates also to an acoustic wave sensor assembly.
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