Abstract:
A wavelength converted light emitting diode (LED) device has an LED having an output surface. A multilayer semiconductor wavelength converter is optically bonded to the LED. At least one of the LED and the wavelength converter is provided with light extraction features.
Abstract:
A light emitting diode (LED) has various LED layers provided on a substrate. A multilayer semiconductor wavelength converter, capable of converting the wavelength of light generated in the LED to light at a longer wavelength, is attached to the upper surface of the LED by a bonding layer. One or more textured surfaces within the LED are used to enhance the efficiency at which light is transported from the LED to the wavelength converter. In some embodiments, one or more surfaces of the wavelength converter is provided with a textured surface to enhance the extraction efficiency of the long wavelength light generated within the converter.
Abstract:
Optical connectors are provided for connecting sets of optical wavcguides (104), such as optical fiber ribbons to each other, to printed circuit boards, or to backplanes. The provided connectors (100) include a housing (110) that has an attachment area (102) for receiving and permanently attaching a plurality of optical waveguides. Additionally, the provided connectors include a light coupling unit (120) disposed in and configured to move with the housing. The provided connectors also include a second attachment area (108) for receiving and permanently attaching to the plurality of optical waveguides that causes each optical waveguide to be bent between the two attachment areas. The provided connectors utilize expanded beam optics with non-contact optical mating resulting in relaxed mechanical precision requirements. The provided connectors can have low optical loss, are easily scalable to high channel count (optical fibers per connector) and can be compatible with low insertion force blind mating.
Abstract:
A multilayer construction is disclosed. The multilayer construction includes a -ll-VI semiconductor layer (110)x and a Si 3 N 4 layer (120) disposed directly on the ll-VI semiconductor layer. To improve the adhesion of the S13N4 layer (120) a native oxide on the ll-VI semiconductor layer is removed.
Abstract:
Light emitting systems are disclosed. More particularly light emitting systems that utilize wavelength converting semiconductor layer stacks, and preferred amounts of potential well types in such stacks to achieve more optimal performance are disclosed
Abstract:
A projection system and a display that incorporates the projection system are provided. The projection system includes at least one electroluminescent device that emits a first wavelength of light, at least one semiconductor multilayer stack that downconverts the first wavelength of light to a second wavelength of light, and a scanning optical element that transmits the light along a scanned direction. The electroluminescent device can be part of an array of electroluminescent devices, and can be monolithic. The semiconductor multilayer stack can be part of an array of semiconductor multilayer stacks, and can also be monolithic. The scanning optical element can be positioned to scan the electroluminescent device across the semiconductor multilayer stack, or it can be positioned to scan the downconverted light after it has left the semiconductor multilayer stack.
Abstract:
Solid state lighting devices include a first luminescent element (612) emitting light having a first spectrum, and a second luminescent element (614) emitting light having a second spectrum. The first luminescent element includes a first electroluminescent element (612a) that emits a first pump light, and a first light converting element (612b) that converts at least some of the first pump light to a first re-emitted light component. The second luminescent element includes a second electroluminescent element (614a) that emits a second pump light, and a second light converting element (614b) that converts at least some second pump light to a second re-emitted light component. The first and/or second light converting element includes a potential well. Light emitted by the first and second luminescent elements combine to provide a device output, which can approximate a Planckian locus over a range of color temperatures and exhibit a color rendering index of at least 60, 70, or 80.
Abstract:
Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a first semiconductor layer for absorbing at least a portion of light at a first wavelength; a semiconductor potential well for converting at least a portion of the light absorbed at the first wavelength to light at a longer second wavelength; and a second semiconductor layer that is capable of absorbing at least a portion of light at the first wavelength. The first semiconductor layer has a maximum first index of refraction at the second wavelength. The second semiconductor layer has a second index of refraction at the second wavelength that is greater than the maximum first index of refraction.
Abstract:
A particle reflow etching method. Coating a dispersed particle solution on a substrate, melting the particles, and etching the substrate. The particles may optionally be etched before melting. Applying a hard mask to a substrate and coating a dispersed particle solution on the hard mask, melting the particles and etching the surface of the hard mask. An article with a substrate and a coating of melted particles. The article may also have a hard mask on the substrate.
Abstract:
Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength from a top surface of the electroluminescent device. The light emitting system further includes a construction proximate a side of the electroluminescent device for blocking light at the first wavelength that would otherwise exit the side. The light emitting system further includes a re-emitting semiconductor construction that includes a II-VI potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the electroluminescent device and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system.