公开(公告)号：WO2012173959A3

公开(公告)日：2013-05-16

申请号：PCT/US2012042000

申请日：2012-06-12

Applicant: 3M INNOVATIVE PROPERTIES CO ,  HAASE MICHAEL A

Inventor： HAASE MICHAEL A

IPC: H01L31/0687 ,  H01L31/0224

CPC classification number: H01L31/0725 ,  H01L31/022425 ,  H01L31/0687 ,  Y02E10/52 ,  Y02E10/544

Abstract: Solar cells exhibiting improved conversion efficiency are disclosed. Particularly, multi-pn junction solar cells that contain a current spreading layer as well as concentrating photovoltaic modules that include such a solar cell and light concentrating optics are disclosed. The multi-pn junctions in question may generally be made up of III-V semiconductor materials, while the current spreading layer may generally be made up of II-VI semiconductor materials.

Abstract translation: 公开了具有改善的转换效率的太阳能电池。 特别地，公开了包含电流扩散层的多pn结太阳能电池以及包括这种太阳能电池和集中光学的集中光伏模块。 所讨论的多pn结通常可由III-V族半导体材料构成，而电流扩散层通常可由II-VI半导体材料制成。

公开(公告)号：WO2011008476A1

公开(公告)日：2011-01-20

申请号：PCT/US2010/040038

申请日：2010-06-25

Applicant: 3M INNOVATIVE PROPERTIES COMPANY ,  SMITH, Terry L., ,  HAASE, Michael A., ,  MILLER, Thomas J., ,  SUN, Xiaoguang,

Inventor： SMITH, Terry L., ,  HAASE, Michael A., ,  MILLER, Thomas J., ,  SUN, Xiaoguang,

IPC: H01L33/50 ,  H01L33/08 ,  H01L33/26

CPC classification number: H01L33/08 ,  H01L33/26 ,  H01L33/502

Abstract: Disclosed re-emitting semiconductor constructions (RSCs) may provide full-color RGB or white-light emitting devices that are free of cadmium. Some embodiments may include a potential well that comprises a III-V semiconductor and that converts light of a first photon energy to light of a smaller photon energy, and a window that comprises a II-VI semiconductor having a band gap energy greater than the first photon energy. Some embodiments may include a potential well that converts light having a first photon energy to light having a smaller photon energy and that comprises a II-VI semiconductor that is substantially Cd-free. Some embodiments may include a potential well that comprises a first III-V semiconductor and that converts light having a first photon energy to light having a smaller photon energy, and a window that comprises a second III-V semiconductor and that has a band gap energy greater than the first photon energy.

Abstract translation: 公开的再发射半导体结构（RSC）可以提供不含镉的全色RGB或白光发射器件。 一些实施例可以包括包含III-V半导体并且将第一光子能量的光转换成较小光子能量的光的势阱，以及包括具有大于第一光子能级的带隙能量的II-VI半导体的窗口 光子能量。 一些实施例可以包括将具有第一光子能量的光转换成具有较小光子能量的光并且包括基本上不含Cd的II-VI半导体的势阱。 一些实施例可以包括包括第一III-V半导体并且将具有第一光子能量的光转换成具有较小光子能量的光的势阱，以及包括第二III-V半导体并且具有带隙能量 大于第一光子能量。

公开(公告)号：WO2010129409A1

公开(公告)日：2010-11-11

申请号：PCT/US2010/033131

申请日：2010-04-30

Applicant: 3M INNOVATIVE PROPERTIES COMPANY ,  MILLER, Thomas J., ,  HAASE, Michael A., ,  SUN, Xiaoguang,

Inventor： MILLER, Thomas J., ,  HAASE, Michael A., ,  SUN, Xiaoguang,

IPC: H01L33/00 ,  H01L21/02 ,  H01L33/50 ,  H01L33/28

CPC classification number: H01L33/0087 ,  H01L21/02392 ,  H01L21/02463 ,  H01L21/02466 ,  H01L21/02469 ,  H01L21/0256 ,  H01L21/02568 ,  H01L21/02576 ,  H01L21/02631 ,  H01L33/08 ,  H01L33/28 ,  H01L33/502

Abstract: We have observed anomalous behavior of II-VI semiconductor devices grown on certain semiconductor substrates, and have determined that the anomalous behavior is likely the result of indium atoms from the substrate migrating into the II-VI layers during growth. The indium can thus become an unintended dopant in one or more of the II-VI layers grown on the substrate, particularly layers that are close to the growth substrate, and can detrimentally impact device performance. We describe a variety of semiconductor constructions and techniques effective to deplete the migrating indium within a short distance in the growth layers, or to substantially prevent indium from migrating out of the substrate, or to otherwise substantially isolate functional II-VI layers from the migrating indium, so as to maintain good device performance.

Abstract translation: 我们已经观察到在某些半导体衬底上生长的II-VI半导体器件的异常行为，并且已经确定异常行为可能是生长期间从衬底中的铟原子迁移到II-VI层的结果。 因此，铟可以成为在衬底上生长的一个或多个II-VI层中的非预期掺杂剂，特别是靠近生长衬底的层，并且可能不利地影响器件性能。 我们描述了在生长层中短时间内有效去除迁移铟的各种半导体结构和技术，或者基本上防止铟从衬底迁移出来，或以其他方式实质上将功能性II-VI层与迁移铟 ，以保持良好的设备性能。

公开(公告)号：WO2010074913A3

公开(公告)日：2010-10-14

申请号：PCT/US2009066541

申请日：2009-12-03

Applicant: 3M INNOVATIVE PROPERTIES CO ,  THEISS STEVEN D ,  HAASE MICHAEL A

Inventor： THEISS STEVEN D ,  HAASE MICHAEL A

IPC: H01B5/14 ,  H01B1/00

CPC classification number: H01L21/76802 ,  H01L27/1214 ,  H01L27/124 ,  H01L2224/24137 ,  H05K3/4092 ,  Y10T29/49002 ,  Y10T29/49124 ,  Y10T29/49147 ,  Y10T428/12396

Abstract: Approaches for formation of a circuit via which electrically connects a first thin film metallization layer a second thin film metallization layer are described. Via formation involves the use of an anodization barrier and/or supplemental pad disposed in a via connection region prior to anodization of the first metallization layer. The material used to form the barrier is substantially impermeable to the anodization solution during anodization, and disrupts the formation of oxide between the electrically conducting layer and the barrier. The supplemental pad is non-anodizable, and is covered by the barrier to substantially prevent current flow through the pad during anodization. Following anodization, the barrier is removed. If the supplemental pad is sufficiently conductive, it can be left on the first metallization layer after removal of the barrier. The second metallization layer is disposed over the anodized layer, making electrical contact with the first electrically conductive layer in the via connection region.

Abstract translation: 描述了形成电路的方法，通过该电路将第一薄膜金属化层电连接到第二薄膜金属化层。 通孔形成涉及在阳极氧化第一金属化层之前使用设置在通孔连接区域中的阳极氧化屏障和/或补充焊盘。 用于形成屏障的材料在阳极氧化期间对于阳极氧化溶液是基本上不可渗透的，并且破坏导电层和阻挡层之间的氧化物的形成。 补充垫是非阳极氧化的，并被屏障覆盖，以在阳极氧化期间基本上防止电流流过垫。 阳极氧化后，屏障被去除。 如果补充垫具有足够的导电性，则可以在去除屏障之后留在第一金属化层上。 第二金属化层设置在阳极氧化层上，与通孔连接区域中的第一导电层电接触。

公开(公告)号：WO2010068460A3

公开(公告)日：2010-06-17

申请号：PCT/US2009/065784

申请日：2009-11-24

Applicant: 3M INNOVATIVE PROPERTIES COMPANY ,  ZHANG, Jun-Ying, ,  SMITH, Terry, L., ,  HAASE, Michael, A., ,  YANG, Zhaohui,

Inventor： ZHANG, Jun-Ying, ,  SMITH, Terry, L., ,  HAASE, Michael, A., ,  YANG, Zhaohui,

IPC: H01L21/302

Abstract: A particle reflow etching method. Coating a dispersed particle solution on a substrate, melting the particles, and etching the substrate. The particles may optionally be etched before melting. Applying a hard mask to a substrate and coating a dispersed particle solution on the hard mask, melting the particles and etching the surface of the hard mask. An article with a substrate and a coating of melted particles. The article may also have a hard mask on the substrate.

公开(公告)号：WO2009158138A3

公开(公告)日：2010-03-18

申请号：PCT/US2009045801

申请日：2009-06-01

Applicant: 3M INNOVATIVE PROPERTIES CO ,  HAASE MICHAEL A ,  ZHANG JUN-YING ,  MILLER THOMAS J

Inventor： HAASE MICHAEL A ,  ZHANG JUN-YING ,  MILLER THOMAS J

IPC: H01L33/50

CPC classification number: H01L25/0756 ,  H01L27/14603 ,  H01L27/14609 ,  H01L31/1013 ,  H01L33/44 ,  H01L33/50 ,  H01L51/5036 ,  H01L51/5262 ,  H01L2924/0002 ,  H01L2924/09701 ,  H01L2933/0091 ,  H01L2924/00

Abstract: Semiconductor light converting constructions are disclosed. The semiconductor light converting construction includes a first semiconductor layer for absorbing at least a portion of light at a first wavelength; a semiconductor potential well for converting at least a portion of the light absorbed at the first wavelength to light at a longer second wavelength; and a second semiconductor layer that is capable of absorbing at least a portion of light at the first wavelength. The first semiconductor layer has a maximum first index of refraction at the second wavelength. The second semiconductor layer has a second index of refraction at the second wavelength that is greater than the maximum first index of refraction.

Abstract translation: 公开了半导体光转换结构。 半导体光转换结构包括用于吸收第一波长的至少一部分光的第一半导体层; 用于将在第一波长处吸收的光的至少一部分转换成更长的第二波长的光的半导体势阱; 以及能够吸收第一波长的至少一部分光的第二半导体层。 第一半导体层在第二波长处具有最大的第一折射率。 第二半导体层在第二波长处具有大于最大第一折射率的第二折射率。

公开(公告)号：WO2010027648A1

公开(公告)日：2010-03-11

申请号：PCT/US2009054140

申请日：2009-08-18

Applicant: 3M INNOVATIVE PROPERTIES CO ,  HAASE MICHAEL A ,  MILLER THOMAS J ,  SUN XIAOGUANG

Inventor： HAASE MICHAEL A ,  MILLER THOMAS J ,  SUN XIAOGUANG

IPC: H01S5/04 ,  H01S5/183 ,  H01S5/347

CPC classification number: H01S5/041 ,  B82Y20/00 ,  H01S5/0215 ,  H01S5/0217 ,  H01S5/024 ,  H01S5/1039 ,  H01S5/14 ,  H01S5/18308 ,  H01S5/2009 ,  H01S5/2022 ,  H01S5/2027 ,  H01S5/309 ,  H01S5/347 ,  H01S5/423 ,  H01S2301/18

Abstract: Light sources are disclosed. A disclosed light source includes a III-V based pump light source (170) that includes nitrogen and emits light at a first wavelength. The light source further includes a vertical cavity surface emitting laser (VCSEL) that converts at least a portion of the first wavelength light (174) emitted by the pump light surce (170) to at least a partially coherent light at a second wavelength (176). The VCSEL includes first and second mirrors (120, 160) that form an optical cavity for light at the second wavelength. The first mirror (120) is substantially reflective at the second wavelength and includes a first multilayer slfack. The second mirror (160) is substantially transmissive at the first wavelength and partially reflective and partially transmissive at the second wavelength. The second mirror includes a second multilayer stack. The VCSEL further includes a semiconductor multilayer stack (130) that is disposed between the first and second mirrors and converts at least a portion of the first wavelength light to the second wavelength light. The semiconductor multilayer stack (130) includes a quantum well that includes a Cd(Mg)ZnSe alloy.

Abstract translation: 公开了光源。 所公开的光源包括包含氮并发射第一波长的光的基于III-V的泵浦光源（170）。 光源还包括垂直腔表面发射激光器（VCSEL），其将由泵浦光线（170）发射的第一波长光（174）的至少一部分转换成至少部分相干的第二波长的光（176 ）。 VCSEL包括为第二波长的光形成光腔的第一和第二反射镜（120,160）。 第一反射镜（120）在第二波长处基本上是反射的，并且包括第一多层悬置。 第二反射镜（160）在第一波长处是基本上透射的，并且在第二波长处是部分反射和部分透射的。 第二反射镜包括第二多层叠层。 VCSEL还包括设置在第一和第二反射镜之间并将第一波长光的至少一部分转换成第二波长光的半导体多层堆叠（130）。 半导体多层堆叠（130）包括包含Cd（Mg）ZnSe合金的量子阱。

公开(公告)号：WO2009158159A3

公开(公告)日：2010-03-04

申请号：PCT/US2009046083

申请日：2009-06-03

Applicant: 3M INNOVATIVE PROPERTIES CO ,  SMITH TERRY L ,  HAASE MICHAEL A ,  ZHANG JUN-LING

Inventor： SMITH TERRY L ,  HAASE MICHAEL A ,  ZHANG JUN-LING

IPC: H01L33/50 ,  H01L33/44

CPC classification number: H01L33/44 ,  H01L33/08 ,  H01L33/502 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

Abstract: Light converting constructions are disclosed. The light converting construction includes a phosphor slab that has a first index of refraction for converting at least a portion of light at a first wavelength to light at a longer second wavelength; and a structured layer that is disposed on the phosphor slab and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the phosphor slab and a plurality of openings that expose the phosphor slab. The light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the phosphor slab in the plurality of openings. The structured overcoat has a third index of refraction that is greater than the second index of refraction.

Abstract translation: 公开了光转换结构。 光转换结构包括：具有第一折射率的荧光体板，用于将第一波长的至少一部分光转换成较长的第二波长的光; 以及设置在所述荧光体板上并且具有小于所述第一折射率的第二折射率的结构化层。 结构化层包括直接设置在荧光体板上的多个结构以及暴露荧光体板的多个开口。 光转换结构还包括直接设置在结构化层的至少一部分上的结构化外涂层和多个开口中的荧光体板的一部分。 结构化外涂层具有大于第二折射率的第三折射率。

公开(公告)号：WO2010009112A2

公开(公告)日：2010-01-21

申请号：PCT/US2009/050523

申请日：2009-07-14

Applicant: 3M INNOVATIVE PROPERTIES COMPANY ,  HAASE, Michael, A. ,  THIELEN, James, A. ,  LEATHERDALE, Catherine, A. ,  WEAVER, Billy, L. ,  SMITH, Terry, L.

Inventor： HAASE, Michael, A. ,  THIELEN, James, A. ,  LEATHERDALE, Catherine, A. ,  WEAVER, Billy, L. ,  SMITH, Terry, L.

CPC classification number: H05B33/0812 ,  H01L25/0753 ,  H01L33/502 ,  H01L33/507 ,  H05B33/0857 ,  Y02B20/343

Abstract: Light emitting systems are disclosed. The light emitting system emits an output light that has a first color. The light emitting system includes a first electroluminescent device that emits light at a first wavelength in response to a first signal. The first wavelength is substantially independent of the first signal. The intensity of the emitted first wavelength light is substantially proportional to the first signal. The light emitting system further includes a first luminescent element that includes a second electroluminescent device and a first light converting layer. The second electroluminescent device emits light at a second wavelength in response to a second signal. The first light converting layer includes a semiconductor potential well and converts at least a portion of light at the second wavelength to light at a third wavelength that is longer than the second wavelength. The light emitting system combines light at the first wavelength with light at the third wavelength to form the output light at the first color. When one of the first and second signals changes from about 50% of a maximum rating of the signal to about 100% of the maximum rating, but the ratio of the first signal to the second signal remains substantially unchanged, the first color of the output light remains substantially unchanged.

Abstract translation: 公开了发光系统。 发光系统发出具有第一颜色的输出光。 发光系统包括响应于第一信号而发射第一波长的光的第一电致发光装置。 第一波长基本上与第一信号无关。 发射的第一波长光的强度基本上与第一信号成比例。 该发光系统还包括第一发光元件，该第一发光元件包括第二电致发光装置和第一光转换层。 第二电致发光装置响应于第二信号而发射第二波长的光。 第一光转换层包括半导体势阱，并将第二波长的光的至少一部分转换为比第二波长更长的第三波长的光。 发光系统将第一波长的光与第三波长的光组合以形成第一颜色的输出光。 当第一信号和第二信号中的一个从信号的最大额定值的约50％变化到最大额定值的约100％，但第一信号与第二信号的比率基本保持不变时，输出的第一颜色 光线基本保持不变。

公开(公告)号：WO2009158159A2

公开(公告)日：2009-12-30

申请号：PCT/US2009/046083

申请日：2009-06-03

Applicant: 3M INNOVATIVE PROPERTIES COMPANY ,  SMITH, Terry, L. ,  HAASE, Michael, A. ,  ZHANG, Jun-ling

Inventor： SMITH, Terry, L. ,  HAASE, Michael, A. ,  ZHANG, Jun-ling

IPC: H01L33/00

CPC classification number: H01L33/44 ,  H01L33/08 ,  H01L33/502 ,  H01L2924/0002 ,  H01L2933/0091 ,  H01L2924/00

Abstract: Light converting constructions are disclosed. The light converting construction includes a phosphor slab that has a first index of refraction for converting at least a portion of light at a first wavelength to light at a longer second wavelength; and a structured layer that is disposed on the phosphor slab and has a second index of refraction that is smaller than the first index of refraction. The structured layer includes a plurality of structures that are disposed directly on the phosphor slab and a plurality of openings that expose the phosphor slab. The light converting construction further includes a structured overcoat that is disposed directly on at least a portion of the structured layer and a portion of the phosphor slab in the plurality of openings. The structured overcoat has a third index of refraction that is greater than the second index of refraction.

Abstract translation: 公开了光转换结构。 光转换结构包括：具有第一折射率的荧光体板，用于将第一波长的至少一部分光转换成较长的第二波长的光; 以及设置在所述荧光体板上并且具有小于所述第一折射率的第二折射率的结构化层。 结构化层包括直接设置在荧光体板上的多个结构以及暴露荧光体板的多个开口。 光转换结构还包括直接设置在结构化层的至少一部分上的结构化外涂层和多个开口中的荧光体板的一部分。 结构化外涂层具有大于第二折射率的第三折射率。