公开(公告)号：WO2015006382A1

公开(公告)日：2015-01-15

申请号：PCT/US2014/045836

申请日：2014-07-08

Applicant: SOLEXEL, INC. ,  DUTTON, David ,  ANBALAGAN, Pranav ,  KRAMER, Karl-Josef ,  MOSLEHI, Mehrdad, M.

Inventor： DUTTON, David ,  ANBALAGAN, Pranav ,  KRAMER, Karl-Josef ,  MOSLEHI, Mehrdad, M.

IPC: H01L31/18 ,  H01L31/04

CPC classification number: H01L31/049 ,  H01L31/0445 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

Abstract: A lamination stack for etching solar cells is provided. At least two solar cell wafers are attached to corresponding backplane sheets which are larger than the solar cell wafers. Release layers larger than the solar cells and smaller than the backplane sheets are positioned on the backplane sheets on the opposite side of the attached solar cell wafers. The backplane sheets are bonded together along the exposed peripheral boundary formed by the release layers.

Abstract translation: 提供了一种用于蚀刻太阳能电池的叠片。 至少两个太阳能电池晶片连接到大于太阳能电池晶片的对应背板上。 大于太阳能电池并且小于背板的释放层位于附着的太阳能电池晶片的相对侧上的背板上。 背板被沿着由剥离层形成的暴露的外围边界粘合在一起。

公开(公告)号：WO2014186300A1

公开(公告)日：2014-11-20

申请号：PCT/US2014/037746

申请日：2014-05-12

Applicant: SOLEXEL, INC. ,  MOSLEHI, Mehrdad, M. ,  PAWAN, Kapur

Inventor： MOSLEHI, Mehrdad, M. ,  PAWAN, Kapur

IPC: E06B3/32

CPC classification number: F24S20/60 ,  E06B9/386 ,  E06B2009/2476 ,  F24S23/82 ,  H01L31/042 ,  H01L31/048 ,  H02S30/20 ,  Y02E10/50

Abstract: Solar photovoltaic window blind slats for power generation from internal and external light sources are provided are provided. A plurality of solar cells are attached to at least two sides of a slat core. Distributed maximum power point tracking optimizer components are associated with each solar cell. The solar cells and corresponding distributed maximum power point tracking optimizer components on each slat side are connected in electrical series.

Abstract translation: 提供了用于从内部和外部光源发电的太阳能光伏窗帘板条。 多个太阳能电池连接到板条芯的至少两侧。 分布式最大功率点跟踪优化器组件与每个太阳能电池相关联。 每个板条侧的太阳能电池和相应的分布式最大功率点跟踪优化器组件以电串联连接。

公开(公告)号：WO2014071417A3

公开(公告)日：2014-11-06

申请号：PCT/US2013068599

申请日：2013-11-05

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M

Inventor： MOSLEHI MEHRDAD M

IPC: H01L31/042 ,  H01L31/18

CPC classification number: H01L31/022458 ,  H01L31/02 ,  H01L31/0201 ,  H01L31/022433 ,  H01L31/02245 ,  H01L31/0443 ,  H01L31/0445 ,  H01L31/0504 ,  H01L31/0516 ,  H01L31/1896 ,  Y02B10/10 ,  Y02E10/50

Abstract: According to one aspect of the disclosed subject matter, a monolithically isled solar cell is provided. The solar cell comprises a semiconductor layer having a light receiving frontside and a backside opposite the frontside and attached to an electrically insulating backplane. A trench isolation pattern partitions the semiconductor layer into electrically isolated isles on the electrically insulating backplane. A first metal layer having base and emitter electrodes is positioned on the semiconductor layer backside. A patterned second metal layer providing cell interconnection and connected to the first metal layer by via plugs is positioned on the backplane.

Abstract translation: 根据所公开的主题的一个方面，提供了一种单片式太阳能电池。 该太阳能电池包括具有光接收正面的半导体层和与正面相对并且附接到电绝缘背板的背面。 沟槽隔离图案将半导体层分隔成电绝缘背板上的电隔离岛。 具有基极和发射极电极的第一金属层位于半导体层背面上。 提供电池互连且通过通孔插塞连接到第一金属层的图案化的第二金属层位于背板上。

公开(公告)号：WO2012135395A3

公开(公告)日：2013-02-07

申请号：PCT/US2012031043

申请日：2012-03-28

Applicant: SOLEXEL INC ,  MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  SEUTTER SEAN ,  KAPUR PAWAN ,  STALCUP THOM ,  WANG DAVID XUAN-QI ,  KAMIAN GEORGE D ,  MANTEGHI KAMRAN ,  SU YEN-SHENG ,  ANBALAGAN PRANAV ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  WORWAG WOJCIECH

Inventor： MOSLEHI MEHRDAD M ,  KRAMER KARL-JOSEF ,  SEUTTER SEAN ,  KAPUR PAWAN ,  STALCUP THOM ,  WANG DAVID XUAN-QI ,  KAMIAN GEORGE D ,  MANTEGHI KAMRAN ,  SU YEN-SHENG ,  ANBALAGAN PRANAV ,  RANA VIRENDRA V ,  CALCATERRA ANTHONY ,  OLSEN GERRY ,  WORWAG WOJCIECH

IPC: H01L31/042 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1892 ,  Y02E10/547

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, attaching a prepeg backplane to the interdigitated pattern of base electrodes and emitter electrodes, forming holes in the prepeg backplane which provide access to the first layer of electrically conductive metal, and depositing a second layer of electrically conductive metal on the backside surface of the prepeg backplane forming an electrical interconnect with the first layer of electrically conductive metal through the holes in the prepeg backplane.

Abstract translation: 描述了提供太阳能电池基板加强和电互连的背接触太阳能电池背板的制造方法和结构。 该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图形，将预制电路背板连接到基极和发射电极的交错图案，在预制电路背板上形成提供对第一层 的导电金属，并且在所述预制底板的背面上沉积第二导电金属层，通过所述预制底板中的所述孔与所述第一导电金属层形成电互连。

公开(公告)号：WO2012135395A2

公开(公告)日：2012-10-04

申请号：PCT/US2012/031043

申请日：2012-03-28

Applicant: SOLEXEL, INC. ,  MOSLEHI, Mehrdad, M. ,  KRAMER, Karl-josef ,  SEUTTER, Sean ,  KAPUR, Pawan ,  STALCUP, Thom ,  WANG, David, Xuan-qi ,  KAMIAN, George, D. ,  MANTEGHI, Kamran ,  SU, Yen-sheng ,  ANBALAGAN, Pranav ,  RANA, Virendra, V ,  CALCATERRA, Anthony ,  OLSEN, Gerry ,  WORWAG, Wojciech

Inventor： MOSLEHI, Mehrdad, M. ,  KRAMER, Karl-josef ,  SEUTTER, Sean ,  KAPUR, Pawan ,  STALCUP, Thom ,  WANG, David, Xuan-qi ,  KAMIAN, George, D. ,  MANTEGHI, Kamran ,  SU, Yen-sheng ,  ANBALAGAN, Pranav ,  RANA, Virendra, V ,  CALCATERRA, Anthony ,  OLSEN, Gerry ,  WORWAG, Wojciech

IPC: H01L31/042 ,  H01L31/0216 ,  H01L31/18

CPC classification number: H01L31/022441 ,  H01L31/0516 ,  H01L31/0682 ,  H01L31/1892 ,  Y02E10/547

Abstract: Fabrication methods and structures relating to backplanes for back contact solar cells that provide for solar cell substrate reinforcement and electrical interconnects are described. The method comprises depositing an interdigitated pattern of base electrodes and emitter electrodes on a backside surface of a semiconductor substrate, attaching a prepeg backplane to the interdigitated pattern of base electrodes and emitter electrodes, forming holes in the prepeg backplane which provide access to the first layer of electrically conductive metal, and depositing a second layer of electrically conductive metal on the backside surface of the prepeg backplane forming an electrical interconnect with the first layer of electrically conductive metal through the holes in the prepeg backplane.

Abstract translation: 描述了提供太阳能电池基板加强和电互连的背接触太阳能电池背板的制造方法和结构。 该方法包括在半导体衬底的背面上沉积基底电极和发射电极的交错图形，将预制电路背板连接到基极和发射电极的交错图案，在预制电路背板上形成提供对第一层 的导电金属，并且在所述预制底板的背面上沉积第二导电金属层，通过所述预制底板中的所述孔与所述第一导电金属层形成电互连。

公开(公告)号：WO2012099700A1

公开(公告)日：2012-07-26

申请号：PCT/US2011/068267

申请日：2011-12-31

Applicant: SOLEXEL, INC. ,  KRAMER, Karl-Josef ,  MOSLEHI, Mehrdad, M. ,  YOKOI, Seiichi ,  KAMIAN, George, D. ,  SHARMA, Shashank ,  ASHJAEE, Jay

Inventor： KRAMER, Karl-Josef ,  MOSLEHI, Mehrdad, M. ,  YOKOI, Seiichi ,  KAMIAN, George, D. ,  SHARMA, Shashank ,  ASHJAEE, Jay

IPC: H01L21/205 ,  H01L21/20

CPC classification number: C23C16/45502 ,  C23C16/4412 ,  C23C16/45517 ,  C23C16/4582 ,  C23C16/4583 ,  C23C16/4587 ,  C23C16/481 ,  C30B25/12 ,  C30B25/14 ,  C30B29/06

Abstract: This disclosure enables gas recovery and utilization for use in deposition systems and processes. The system includes a thin-film semiconductor layer deposition system comprising a deposition reactor, precursor gas feeds, and a gas recovery system.

Abstract translation: 本公开使得气体回收和利用可用于沉积系统和工艺。 该系统包括薄膜半导体层沉积系统，其包括沉积反应器，前体气体进料和气体回收系统。

公开(公告)号：WO2011150397A3

公开(公告)日：2012-04-05

申请号：PCT/US2011038444

申请日：2011-05-27

Applicant: SOLEXEL INC ,  RANA VIRENDRA V ,  LIANG JIAN JUN ,  ANBALAGAN PRANAV ,  MOSLEHI MEHRDAD M

Inventor： RANA VIRENDRA V ,  LIANG JIAN JUN ,  ANBALAGAN PRANAV ,  MOSLEHI MEHRDAD M

IPC: H01L31/18 ,  H01L31/042

CPC classification number: H01L31/0682 ,  B23K26/0624 ,  B23K26/08 ,  B23K26/389 ,  B23K26/40 ,  B23K2201/36 ,  B23K2203/172 ,  B23K2203/40 ,  B23K2203/50 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

Abstract: Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

Abstract translation: 公开了用于生产各种类型的异质结和同质结太阳能电池的激光加工方案。 这些方法包括基极和发射极接触开口，选择性掺杂和金属烧蚀。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光加工方案。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或通过外延沉积工艺制造的晶体硅衬底，其是平面的或纹理的/三维的。 这些技术非常适合于薄晶体半导体，包括薄晶体硅薄膜。

公开(公告)号：WO2011133965A3

公开(公告)日：2012-02-02

申请号：PCT/US2011033706

申请日：2011-04-23

Applicant: SOLEXEL INC ,  DESHPANDE ANAND ,  RICOLCOL RAFAEL ,  SEUTTER SEAN ,  KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M

Inventor： DESHPANDE ANAND ,  RICOLCOL RAFAEL ,  SEUTTER SEAN ,  KRAMER KARL-JOSEF ,  MOSLEHI MEHRDAD M

IPC: H01L31/18 ,  H01L31/0216 ,  H01L31/042

CPC classification number: H01L31/02167 ,  H01L31/1864 ,  H01L31/1868 ,  Y02E10/50 ,  Y02P70/521

Abstract: The disclosed subject matter provides a method and structure for obtaining ultra-low surface recombination velocities from highly efficient surface passivation in crystalline silicon substrate- based solar cells by utilizing a bi-layer passivation scheme which also works as an efficient ARC. The bi-layer passivation consists of a first thin layer of wet chemical oxide or a thin hydrogenated amorphous silicon layer. A second layer of amorphous hydrogenated silicon nitride film is deposited on top of the wet chemical oxide or amorphous silicon film. This deposition is then followed by annealing to further enhance the surface passivation.

Abstract translation: 所公开的主题提供了一种用于通过利用也可用作有效ARC的双层钝化方案从基于晶体硅衬底的太阳能电池中的高效表面钝化获得超低表面复合速度的方法和结构。 双层钝化由湿化学氧化物的第一薄层或薄氢化非晶硅层构成。 第二层无定形氢化氮化硅膜沉积在湿化学氧化物或非晶硅膜的顶部。 然后进行该沉积，然后进行退火以进一步增强表面钝化。

公开(公告)号：WO2011084531A9

公开(公告)日：2011-07-14

申请号：PCT/US2010/060591

申请日：2010-12-15

Applicant: SOLEXEL, INC. ,  WANG, David, Xuan-qi ,  MOSLEHI, Mehrdad, M.

Inventor： WANG, David, Xuan-qi ,  MOSLEHI, Mehrdad, M.

IPC: H01L21/677

Abstract: This disclosure presents mobile vacuum carriers that may be used to support thin substrates that would otherwise be too brittle to transport and process. This disclosure relates to the processing of thin semiconductor substrates and has particular applicability to the fields of photovoltaic solar cells, semiconductor microelectronic integrated circuits, micro-electro- mechanical systems (MEMS), optoelectronic devices (such as light-emitting diodes, lasers, photo detectors), data storage devices, etc.

公开(公告)号：WO2011072179A2

公开(公告)日：2011-06-16

申请号：PCT/US2010/059783

申请日：2010-12-09

Applicant: SOLEXEL, INC. ,  MOSLEHI, Mehrdad, M. ,  KAPUR, Pawan ,  KRAMER, Karl-josef ,  WANG, David, Xuan-qi ,  SEUTTER, Sean ,  RANA, Virendra, V. ,  CALCATERRA, Anthony ,  VAN KERSCHAVER, Emmanuel ,  HARWOOD, Duncan ,  MANSOORI, Majid ,  WINGERT, Michael

Inventor： MOSLEHI, Mehrdad, M. ,  KAPUR, Pawan ,  KRAMER, Karl-josef ,  WANG, David, Xuan-qi ,  SEUTTER, Sean ,  RANA, Virendra, V. ,  CALCATERRA, Anthony ,  VAN KERSCHAVER, Emmanuel ,  HARWOOD, Duncan ,  MANSOORI, Majid ,  WINGERT, Michael

IPC: H01L31/042 ,  H01L31/0216

CPC classification number: H01L31/0236 ,  H01L31/0201 ,  H01L31/02167 ,  H01L31/022441 ,  H01L31/022458 ,  H01L31/02363 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/03921 ,  H01L31/056 ,  H01L31/068 ,  H01L31/0682 ,  H01L31/18 ,  H01L31/1804 ,  H01L31/1892 ,  Y02E10/52 ,  Y02E10/547 ,  Y02P70/521

Abstract: A back contact back junction solar cell using semiconductor wafers and methods for manufacturing are provided. The back contact back junction solar cell comprises a semiconductor wafer having a doped base region, a light capturing front side surface, and a doped backside emitter region. A front side and backside dielectric layer and passivation layer provide enhance light trapping and internal reflection. Backside base and emitter contacts are connected to metal interconnects forming a metallization pattern of interdigitated fingers and busbars on the backside of the solar cell.

Abstract translation: 提供了使用半导体晶片的背面接触式太阳能电池和制造方法。 背面接合太阳能电池包括具有掺杂基极区域，光捕获前侧表面和掺杂背侧发射极区域的半导体晶片。 前侧和后侧电介质层和钝化层提供增强的光捕获和内部反射。 背面基极和发射极触点连接到在太阳能电池的背面上形成交叉指状物和母线的金属化图案的金属互连。