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    LASER PROCESSING FOR HIGH-EFFICIENCY THIN CRYSTALLINE SILICON SOLAR CELL FABRICATION
    34.
    发明申请
    LASER PROCESSING FOR HIGH-EFFICIENCY THIN CRYSTALLINE SILICON SOLAR CELL FABRICATION 审中-公开
    激光加工用于高效晶体硅太阳能电池制造

    公开(公告)号：WO2011150397A3

    公开(公告)日：2012-04-05

    申请号：PCT/US2011038444

    申请日：2011-05-27

    Applicant: SOLEXEL INC ,  RANA VIRENDRA V ,  LIANG JIAN JUN ,  ANBALAGAN PRANAV ,  MOSLEHI MEHRDAD M

    Inventor： RANA VIRENDRA V ,  LIANG JIAN JUN ,  ANBALAGAN PRANAV ,  MOSLEHI MEHRDAD M

    IPC: H01L31/18 ,  H01L31/042

    CPC classification number: H01L31/0682 ,  B23K26/0624 ,  B23K26/08 ,  B23K26/389 ,  B23K26/40 ,  B23K2201/36 ,  B23K2203/172 ,  B23K2203/40 ,  B23K2203/50 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    Abstract: Laser processing schemes are disclosed for producing various types of hetero-junction and homo-junction solar cells. The methods include base and emitter contact opening, selective doping, and metal ablation. Also, laser processing schemes are disclosed that are suitable for selective amorphous silicon ablation and selective doping for hetero-junction solar cells. These laser processing techniques may be applied to semiconductor substrates, including crystalline silicon substrates, and further including crystalline silicon substrates which are manufactured either through wire saw wafering methods or via epitaxial deposition processes, that are either planar or textured/three-dimensional. These techniques are highly suited to thin crystalline semiconductor, including thin crystalline silicon films.

    Abstract translation: 公开了用于生产各种类型的异质结和同质结太阳能电池的激光加工方案。 这些方法包括基极和发射极接触开口，选择性掺杂和金属烧蚀。 此外，公开了适用于异质结太阳能电池的选择性非晶硅消融和选择性掺杂的激光加工方案。 这些激光处理技术可以应用于包括晶体硅衬底的半导体衬底，并且还包括通过线锯晶片化方法或通过外延沉积工艺制造的晶体硅衬底，其是平面的或纹理的/三维的。 这些技术非常适合于薄晶体半导体，包括薄晶体硅薄膜。

    MOBILE VACUUM CARRIERS FOR THIN WAFER PROCESSING
    36.
    发明申请
    MOBILE VACUUM CARRIERS FOR THIN WAFER PROCESSING 审中-公开

    公开(公告)号：WO2011084531A9

    公开(公告)日：2011-07-14

    申请号：PCT/US2010/060591

    申请日：2010-12-15

    Applicant: SOLEXEL, INC. ,  WANG, David, Xuan-qi ,  MOSLEHI, Mehrdad, M.

    Inventor： WANG, David, Xuan-qi ,  MOSLEHI, Mehrdad, M.

    IPC: H01L21/677

    Abstract: This disclosure presents mobile vacuum carriers that may be used to support thin substrates that would otherwise be too brittle to transport and process. This disclosure relates to the processing of thin semiconductor substrates and has particular applicability to the fields of photovoltaic solar cells, semiconductor microelectronic integrated circuits, micro-electro- mechanical systems (MEMS), optoelectronic devices (such as light-emitting diodes, lasers, photo detectors), data storage devices, etc.

    STRUCTURES AND METHODS FOR HIGH-EFFICIENCY PYRAMIDAL THREE-DIMENSIONAL SOLAR CELLS
    38.
    发明申请
    STRUCTURES AND METHODS FOR HIGH-EFFICIENCY PYRAMIDAL THREE-DIMENSIONAL SOLAR CELLS 审中-公开
    高效率三维太阳能电池的结构和方法

    公开(公告)号：WO2011060091A1

    公开(公告)日：2011-05-19

    申请号：PCT/US2010/056264

    申请日：2010-11-10

    Applicant: SOLEXEL, INC. ,  KAPUR, Pawan ,  MOSLEHI, Mehrdad, M.

    Inventor： KAPUR, Pawan ,  MOSLEHI, Mehrdad, M.

    IPC: H01L31/00

    CPC classification number: H01L31/022425 ,  H01L31/02167 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035281 ,  H01L31/03529 ,  H01L31/0445 ,  H01L31/068 ,  H01L31/182 ,  H01L31/1896 ,  Y02E10/546 ,  Y02E10/547 ,  Y02P70/521

    Abstract: The present disclosure enables high-volume cost effective production of three- dimensional thin film solar cell (3-D TFSC) substrates. First, the present disclosure discloses pyramid-like unit cell structure 16 and 50 which enable epitaxial growth through their open pyramidal structure. The present disclosure than gives four 3-D TFSC embodiments 70, 82, 100, and 110 which may combined as necessary. A basic 3-D TFSC having a substrate, emitter, oxidation on the emitter, front and back metal contacts allows simple processing. Other embodiments disclose a selective emitter, selective backside metal contact, and front-side SiN ARC layers. Several processing methods including process flows 150, 200, 250, 300, and 350 enable production of these 3-D TFSC. Further, the present disclosure enables higher throughput through the use of dual sided template 400. By processing the substrate in the template, the present disclosure increases yield and reduces processing steps.

    Abstract translation: 本公开使得能够大量成本有效地生产三维薄膜太阳能电池（3-D TFSC）基板。 首先，本公开公开了金字塔形单元结构16和50，其能够通过其开放金字塔形结构进行外延生长。 本公开不是给出可以根据需要组合的四个三维TFSC实施例70,82,100和110。 在发射器，前后金属触点上具有衬底，发射极，氧化的基本3-D TFSC允许简单的处理。 其他实施例公开了选择性发射极，选择性背侧金属接触和前侧SiN ARC层。 包括工艺流程150,200,250,300和350的几种处理方法使得能够生产这些3-D TFSC。 此外，本公开通过使用双面模板400可实现更高的生产量。通过在模板中处理衬底，本公开增加了产量并降低了处理步骤。

    METHOD FOR RELEASING A THIN-FILM SUBSTRATE
    39.
    发明申请
    METHOD FOR RELEASING A THIN-FILM SUBSTRATE 审中-公开
    用于释放薄膜基板的方法

    公开(公告)号：WO2010102306A1

    公开(公告)日：2010-09-10

    申请号：PCT/US2010/026570

    申请日：2010-03-08

    Applicant: SOLEXEL, INC. ,  RICOLCOL, Rafael ,  KRAMER, Joe ,  WANG, David, Xuan-Qi ,  MOSLEHI, Mehrdad, M.

    Inventor： RICOLCOL, Rafael ,  KRAMER, Joe ,  WANG, David, Xuan-Qi ,  MOSLEHI, Mehrdad, M.

    IPC: H01L21/4763

    CPC classification number: H01L21/30608 ,  H01L31/03529 ,  H01L31/1804 ,  H01L31/1896 ,  Y02E10/547 ,  Y02P70/521

    Abstract: The present disclosure relates to methods for selectively etching a porous semiconductor layer to separate a thin-film semiconductor substrate (TFSS) having planar or three-dimensional features from a corresponding semiconductor template. The method involves forming a conformal sacrificial porous semiconductor layer on a template. Next, a conformal thin film silicon substrate is formed on top of the porous silicon layer. The middle porous silicon layer is then selectively etched to separate the TFSS and semiconductor template. The disclosed advanced etching chemistries and etching methods achieve selective etching with minimal damage to the TFSS and template.

    Abstract translation: 本公开涉及用于选择性蚀刻多孔半导体层以从相应的半导体模板分离具有平面或三维特征的薄膜半导体衬底（TFSS）的方法。 该方法包括在模板上形成共形牺牲多孔半导体层。 接着，在多孔硅层的顶部形成保形薄膜硅衬底。 然后选择性地蚀刻中间多孔硅层以分离TFSS和半导体模板。 所公开的高级蚀刻化学和蚀刻方法实现选择性蚀刻，对TFSS和模板的损害最小。

    TRENCH FORMATION METHOD FOR RELEASING A THIN-FILM SUBSTRATE FROM A REUSABLE SEMICONDUCTOR TEMPLATE
    40.
    发明申请
    TRENCH FORMATION METHOD FOR RELEASING A THIN-FILM SUBSTRATE FROM A REUSABLE SEMICONDUCTOR TEMPLATE 审中-公开
    用于从可重复使用的半导体模板中释放薄膜基板的成型方法

    公开(公告)号：WO2010091367A1

    公开(公告)日：2010-08-12

    申请号：PCT/US2010/023514

    申请日：2010-02-08

    Applicant: SOLEXEL, INC. ,  WANG, David, Xuan-Qi ,  MOSLEHI, Mehrdad, M.

    Inventor： WANG, David, Xuan-Qi ,  MOSLEHI, Mehrdad, M.

    IPC: H01L21/762 ,  H01L21/20

    CPC classification number: H01L31/035281 ,  H01L21/76229 ,  H01L21/76232 ,  H01L31/03529 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    Abstract: A method is provided for fabricating a thin-film semiconductor substrate by forming a porous semiconductor layer conformally on a reusable semiconductor template and then forming a thin-film semiconductor substrate conformally on the porous semiconductor layer. An inner trench having a depth less than the thickness of the thin-film semiconductor substrate is formed on the thin-film semiconductor substrate. An outer trench providing access to the porous semiconductor layer is formed on the thin-film semiconductor substrate and is positioned between the inner trench and the edge of the thin-film semiconductor substrate. The thin-film semiconductor substrate is then released from the reusable semiconductor template.

    Abstract translation: 提供了一种用于通过在可重复使用的半导体模板上保形地形成多孔半导体层然后在多孔半导体层上保形地形成薄膜半导体衬底来制造薄膜半导体衬底的方法。 在薄膜半导体衬底上形成深度小于薄膜半导体衬底厚度的内沟槽。 提供对多孔半导体层的访问的外部沟槽形成在薄膜半导体衬底上并且位于内部沟槽和薄膜半导体衬底的边缘之间。 然后从可重复使用的半导体模板中释放薄膜半导体衬底。

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