公开(公告)号：US11339053B2

公开(公告)日：2022-05-24

申请号：US16524513

申请日：2019-07-29

Applicant: SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Hajime Fujikura ,  Taichiro Konno ,  Takehiro Yoshida

IPC: C01B21/06 ,  C30B25/02

Abstract: An object of the present invention is to improve quality of a nitride crystal, and also improve performance and manufacturing yield of a semiconductor device manufactured using the crystal. Provided is a nitride crystal in which a composition formula is represented by InxAlyGa1-x-yN (satisfying 0≤x≤1, 0≤y≤1, 0≤x+y≤1), and the concentration of B in the crystal is less than 1×1015 at/cm3, and each of the concentrations of O and C in the crystal is less than 1×1015 at/cm3 in a region of 60% or more of a main surface.

公开(公告)号：US11094539B2

公开(公告)日：2021-08-17

申请号：US16490704

申请日：2018-02-28

Applicant: SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Takehiro Yoshida ,  Fumimasa Horikiri

IPC: H01L21/02 ,  H01L29/20 ,  H01L29/04 ,  H01L21/265

Abstract: A nitride semiconductor substrate is manufactured by a method which includes growing nitride semiconductor crystal along a c-axis direction on a +C-plane of a seed crystal substrate formed of nitride semiconductor crystal to form an n−-type first nitride semiconductor layer; growing the nitride semiconductor crystal along the c-axis direction on the +C-plane of the first nitride semiconductor layer to form a second nitride semiconductor layer; and removing the seed crystal substrate and exposing a −C-plane of the first nitride semiconductor layer to obtain as a semiconductor substrate a laminate of the first nitride semiconductor layer and the second nitride semiconductor layer, with the −C plane as a main surface.

公开(公告)号：US20210215621A1

公开(公告)日：2021-07-15

申请号：US17055539

申请日：2019-04-08

Applicant: SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Fumimasa HORIKIRI

IPC: G01N21/95 ,  H01L29/20 ,  G01N21/59 ,  G01N21/3563 ,  G01N21/359 ,  H01L21/66 ,  H01L21/02

Abstract: There is provided a method for producing a nitride semiconductor laminate in which a thin film is homoepitaxially grown on a substrate comprising group III nitride semiconductor crystals, the method including: homoepitaxially growing a thin film on a substrate, using the substrate in which a dislocation density on its main surface is 5×106 pieces/cm2 or less, a concentration of oxygen therein is less than 1×1017 at·cm−3, and a concentration of impurities therein other than n-type impurity is less than 1×1017 at·cm−3; and inspecting a film quality of the thin film formed on the substrate, wherein in the inspection of the film quality, the film quality of the thin film is inspected by detecting a deviation of an amount of reflected light at a predetermined wavenumber determined in a range of 1,600 cm−1 or more and 1,700 cm−1 or less in a reflection spectrum obtained by irradiating the thin film on the substrate with infrared light, from an amount of reflected. light at the predetermined wavenumber determined according to a film thickness of the thin film, a carder concentration of the substrate, and a carrier concentration of the thin film.

公开(公告)号：US20210184003A1

公开(公告)日：2021-06-17

申请号：US16759004

申请日：2018-08-08

Applicant: SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Fumimasa HORIKIRI ,  Takehiro YOSHIDA

IPC: H01L29/20 ,  H01L21/02 ,  C30B29/38 ,  C23C16/34 ,  C30B25/18

Abstract: A nitride semiconductor substrate including a group III nitride semiconductor crystal and having a main surface, wherein a low index crystal plane is (0001) plane curved in a concave spherical shape to the main surface, and the off-angle (θm, θa) at a position (x, y) in the main surface approximated by x representing a coordinate in a direction along axis, y is a coordinate in a direction along axis, (0, 0) represents a coordinate (x, y) of the center, θm represents a direction component along axis in an off-angle of axis with respect to a normal, θa represents a direction component along axis in the off-angle, (M1, A1) represents a rate of change in the off-angle (θm, θa) with respect to the position (x, y) in the main surface, and (M2, A2) represents the off-angle (θm, θa) at the center.

公开(公告)号：US20200259046A1

公开(公告)日：2020-08-13

申请号：US16783916

申请日：2020-02-06

Applicant: SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Hajime Fujikura

IPC: H01L33/22 ,  H01L33/32 ,  H01L33/12 ,  H01L33/00 ,  C30B29/40 ,  C30B29/20

Abstract: There is provided an aluminum nitride laminate member including: a sapphire substrate having a base surface on which bumps are distributed periodically, each bump having a height of smaller than or equal to 500 nm; and an aluminum nitride layer grown on the base surface and having a flat surface, there being substantially no voids in the aluminum nitride layer.

公开(公告)号：US20200219983A1

公开(公告)日：2020-07-09

申请号：US16621605

申请日：2018-04-19

Applicant: SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Hajime FUJIKURA

IPC: H01L29/20 ,  H01L29/872 ,  H01L29/36 ,  H01L21/02 ,  H01L21/265 ,  H01L21/266 ,  H01L21/324 ,  H01L29/66 ,  C30B29/40 ,  C30B25/18 ,  C30B25/20 ,  C30B31/22

Abstract: A nitride semiconductor laminate includes: a substrate comprising a group III nitride semiconductor and including a surface and a reverse surface, the surface being formed from a nitrogen-polar surface, the reverse surface being formed from a group III element-polar surface and being provided on the reverse side from the surface; a protective layer provided at least on the reverse surface side of the substrate and having higher heat resistance than the reverse surface of the substrate; and a semiconductor layer provided on the surface side of the substrate and comprising a group III nitride semiconductor. The concentration of O in the semiconductor layer is lower than 1×1017 at/cm3.

公开(公告)号：US20200127101A1

公开(公告)日：2020-04-23

申请号：US16088221

申请日：2017-02-10

Applicant: SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Yoshinobu NARITA

IPC: H01L29/36 ,  H01L29/20 ,  H01L21/02

Abstract: There is provided a nitride semiconductor substrate, including: a substrate configured as an n-type semiconductor substrate; and a drift layer provided on the substrate and configured as a gallium nitride layer containing donors and carbons, wherein a concentration of the donors in the drift layer is 5.0×1016/cm3 or less, and is equal to or more than a concentration of the carbons that function as acceptors in the drift layer, over an entire area of the drift layer, and a difference obtained by subtracting the concentration of the carbons that function as acceptors in the drift layer from the concentration of the donors in the drift layer, is gradually decreased from a substrate side toward a surface side of the drift layer.

公开(公告)号：US20200028066A1

公开(公告)日：2020-01-23

申请号：US16296291

申请日：2019-03-08

Applicant: SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Kenji SHIBATA ,  Kazutoshi WATANABE ,  Fumimasa HORIKIRI

IPC: H01L41/08 ,  H01L41/187 ,  H01L41/314

Abstract: There is provided a piezoelectric laminate, including: a substrate; and a piezoelectric film formed on the substrate, wherein the piezoelectric film is a film containing an alkali niobium oxide of a perovskite structure represented by a composition formula of (K1-xNax)NbO3 (0

公开(公告)号：US20190288180A1

公开(公告)日：2019-09-19

申请号：US16292873

申请日：2019-03-05

Applicant: SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Kenji SHIBATA ,  Kazutoshi WATANABE ,  Fumimasa HORIKIRI

IPC: H01L41/187 ,  H01L41/43 ,  H01L41/047 ,  C04B35/495

Abstract: There is provided a piezoelectric laminate, including: a substrate; and a piezoelectric film formed on the substrate, wherein the piezoelectric film contains an alkali niobium oxide represented by a composition formula of (K1−xNax)NbO3 (0

公开(公告)号：US20190273138A1

公开(公告)日：2019-09-05

申请号：US16284473

申请日：2019-02-25

Applicant: SCIOCS COMPANY LIMITED ,  SUMITOMO CHEMICAL COMPANY, LIMITED

Inventor： Hajime FUJIKURA

IPC: H01L29/20 ,  H01L21/02 ,  H01L21/20 ,  H01L29/04

Abstract: To provide a new GaN laminate obtained b growing a GaN layer on a GaN substrate by HVPE, including: a GaN substrate containing GaN single crystal and having a low index crystal plane as c-plane closest to a main surface; and a GaN layer epitaxially grown on the main surface of the GaN substrate wherein a surface of the GaN layer has a macro step-macro terrace structure in which a macro step and a macro terrace are alternately arranged, one of the macro step and the macro terrace has a step-terrace structure in which a step having a height of equal to or more than a plurality of molecular layers of GaN and extending in a direction orthogonal to m-axis direction, and a terrace are alternately arranged, and the other one of the macro step and the macro terrace has a step-terrace structure in which a step having a height of equal to or more than a plurality of molecular layers of GaN and extending in a direction orthogonal to a-axis direction, and a terrace are alternately arranged.