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    INTERCONNECT LAYERS WITHOUT ELECTROMIGRATION
    31.
    发明申请
    INTERCONNECT LAYERS WITHOUT ELECTROMIGRATION 审中-公开
    不连接电路的互连层

    公开(公告)号：WO2008055887A1

    公开(公告)日：2008-05-15

    申请号：PCT/EP2007/061904

    申请日：2007-11-06

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  IBM UNITED KINGDOM LIMITED ,  LUCE, Stephen, Ellinwood ,  MCDEVITT, Thomas, Leddy ,  STAMPER, Anthony

    Inventor： LUCE, Stephen, Ellinwood ,  MCDEVITT, Thomas, Leddy ,  STAMPER, Anthony

    IPC: H01L23/532 ,  H01L23/522

    CPC classification number: H01L23/53238 ,  H01L21/76801 ,  H01L23/5226 ,  H01L23/53223 ,  H01L23/53228 ,  H01L23/53252 ,  H01L23/53266 ,  H01L23/5329 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A structure and a method for forming the same. The structure includes (a) an interlevel dielectric (ILD) layer; (b) a first electrically conductive line and a second electrically conductive line both residing in the ILD layer; (c) a diffusion barrier region residing in the ILD layer. The diffusion barrier region (i) physically isolates, (ii) electrically couples together, and (iii) are in direct physical contact with the first and second electrically conductive lines. The first and second electrically conductive lines each comprises a first electrically conductive material. The diffusion barrier region comprises a second electrically conductive material different fro m the first electrically conduct ive material. The diffusion barrier region is adapted to prevent a diffusion of the first electrically conductive material through the diffusion barrier region.

    Abstract translation: 一种结构及其形成方法。 该结构包括（a）层间电介质层（ILD）层; （b）位于ILD层中的第一导电线和第二导电线; （c）位于ILD层中的扩散阻挡区域。 扩散阻挡区（i）物理隔离，（ii）电耦合在一起，和（iii）与第一和第二导电线直接物理接触。 第一和第二导电线各自包括第一导电材料。 扩散阻挡区域包括与第一导电材料不同的第二导电材料。 扩散阻挡区域适于防止第一导电材料通过扩散阻挡区域的扩散。

    BY-PRODUCT COLLECTING PROCESSES FOR CLEANING PROCESSES
    32.
    发明申请
    BY-PRODUCT COLLECTING PROCESSES FOR CLEANING PROCESSES 审中-公开
    用于清洁工艺的副产品收集工艺

    公开(公告)号：WO2008046035A1

    公开(公告)日：2008-04-17

    申请号：PCT/US2007/081193

    申请日：2007-10-12

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  CRANDAL, Cooney, Edward ,  MURPHY, William, Joseph ,  STAMPER, Anthony, Kendall ,  STRIPPE, David, Craig

    Inventor： CRANDAL, Cooney, Edward ,  MURPHY, William, Joseph ,  STAMPER, Anthony, Kendall ,  STRIPPE, David, Craig

    IPC: B08B5/00 ,  C25F1/00

    CPC classification number: H01L21/67028 ,  H01J37/3244 ,  H01J37/32862 ,  H01L21/02063

    Abstract: An apparatus and a method for operating the same. The method includes providing an apparatus which includes a chamber, (200) wherein the chamber includes first (260b) and second (260a) inlets, an anode (210) and a cathode (230) structures in the chamber, and a wafer (100) on the cathode structure (230). A cleaning gas (260b) is injected into the chamber via the first inlet. A collecting gas (260a) is injected into the chamber via the second inlet. The cleaning gas when ionized has a property of etching a top surface of the wafer resulting in a by-product mixture in the chamber. The collecting gas has a property of preventing the by product mixture from depositing back to the surface of the wafer.

    Abstract translation: 一种装置及其操作方法。 该方法包括提供一种装置，其包括腔室（200），其中腔室包括第一（260b）和第二（260a）入口，腔室中的阳极（210）和阴极（230）结构以及晶片（100 ）在阴极结构（230）上。 清洁气体（260b）经由第一入口注入室中。 收集气体（260a）经由第二入口注入腔室。 电离时的清洁气体具有腐蚀晶片的顶面的特性，导致室中的副产物混合物。 收集气体具有防止副产物混合物沉淀回晶片表面的性质。

    LOW RESISTANCE AND INDUCTANCE BACKSIDE THROUGH VIAS AND METHODS OF FABRICATING SAME
    34.
    发明申请
    LOW RESISTANCE AND INDUCTANCE BACKSIDE THROUGH VIAS AND METHODS OF FABRICATING SAME 审中-公开
    通过VIAS的低电阻和电感及其制造方法

    公开(公告)号：WO2007084879A2

    公开(公告)日：2007-07-26

    申请号：PCT/US2007/060544

    申请日：2007-01-15

    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION ,  ERTURK, Mete ,  GROVES, Robert, A. ,  JOHNSON, Jeffrey, B. ,  JOSEPH, Alvin, J. ,  LIU, Qizhi ,  SPROGIS, Edmund, J. ,  STAMPER, Anthony, K.

    Inventor： ERTURK, Mete ,  GROVES, Robert, A. ,  JOHNSON, Jeffrey, B. ,  JOSEPH, Alvin, J. ,  LIU, Qizhi ,  SPROGIS, Edmund, J. ,  STAMPER, Anthony, K.

    IPC: H01L21/50

    CPC classification number: H01L21/76898 ,  H01L23/481 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: A backside contact structure and method of fabricating the structure. The method includes: forming a dielectric isolation (250) in a substrate (100), the substrate (100) having a frontside and an opposing backside; forming a first dielectric layer (105) on the frontside of the substrate (100); forming a trench (265C) in the first dielectric layer (105), the trench (265C) aligned over and within a perimeter of the dielectric isolation (250) and extending to the dielectric isolation (250); extending the trench (265C) formed in the first dielectric layer (1 05) through the dielectric isolation (250) and into the substrate (1 00)to a depth (Dl ) less than a thickness of the substrate (1 00); filling the trench (265C) and co-planarizing a top surface of the trench (265C) with a top surface of the first dielectric layer (1 05) to form an electrically conductive through via (270C); and thinning the substrate (100) from a backside of the substrate (100) to expose the through via (270C).

    Abstract translation: 背面接触结构及其制造方法。 该方法包括：在衬底（100）中形成绝缘隔离（250），所述衬底（100）具有前侧和相对的背面; 在所述基板（100）的前侧形成第一电介质层（105）; 在所述第一电介质层（105）中形成沟槽（265C），所述沟槽（265C）在所述介电隔离（250）的周边内并且在所述介质隔离（250）的周边内对准并且延伸到所述电介质隔离（250）; 将形成在第一电介质层（105）中的沟槽（265C）延伸通过电介质隔离（250）并延伸到衬底（100）中至达到小于衬底厚度（001）的深度（D1）。 填充沟槽（265C）并且将沟槽（265C）的顶表面与第一介电层（105）的顶表面共平化以形成导电通孔（270C）; 以及从所述衬底（100）的背面使所述衬底（100）变薄以暴露所述通孔（270C）。

    MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) AND RELATED ACTUATOR BUMPS, METHOD OF MANUFACTURE AND DESIGN STRUCTURES
    36.
    发明申请
    MICRO-ELECTRO-MECHANICAL SYSTEM (MEMS) AND RELATED ACTUATOR BUMPS, METHOD OF MANUFACTURE AND DESIGN STRUCTURES 审中-公开
    微电子机械系统（MEMS）及相关执行机构的制造，制造和设计结构的方法

    公开(公告)号：WO2012177304A3

    公开(公告)日：2014-03-13

    申请号：PCT/US2012029005

    申请日：2012-03-14

    Applicant: IBM ,  JAHNES CHRISTOPHER V ,  STAMPER ANTHONY K

    Inventor： JAHNES CHRISTOPHER V ,  STAMPER ANTHONY K

    IPC: B81B3/00

    CPC classification number: H01H59/0009 ,  B81B3/001 ,  B81B7/0006 ,  B81B2201/016 ,  B81B2203/0118 ,  B81B2203/04 ,  B81C1/0015 ,  B81C1/00293 ,  B81C2203/0145 ,  G06F17/5045 ,  G06F17/5068 ,  H01H1/0036 ,  H01H2001/0057 ,  Y10T29/49121

    Abstract: Micro-Electro-Mechanical System (MEMS) structures, methods of manufacture and design structures are provided. The method of forming a MEMS structure includes forming fixed actuator electrodes (115) and a contact point on a substrate. The method further includes forming a MEMS beam (100) over the fixed actuator electrodes and the contact point. The method further includes forming an array of actuator electrodes (105') in alignment with portions of the fixed actuator electrodes, which are sized and dimensioned to prevent the MEMS beam from collapsing on the fixed actuator electrodes after repeating cycling. The array of actuator electrodes are formed in direct contact with at least one of an underside of the MEMS beam and a surface of the fixed actuator electrodes.

    Abstract translation: 提供微机电系统（MEMS）结构，制造方法和设计结构。 形成MEMS结构的方法包括在基板上形成固定的致动器电极（115）和接触点。 该方法还包括在固定的致动器电极和接触点上形成MEMS光束（100）。 该方法还包括形成与固定致动器电极的部分对准的致动器电极阵列（105'），其尺寸和尺寸被设计成防止MEMS梁在重复循环之后塌陷在固定的致动器电极上。 致动器电极的阵列形成为与MEMS光束的下侧和固定的致动器电极的表面中的至少一个直接接触。

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