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    Lateral mos transistor
    37.
    发明专利
    Lateral mos transistor 审中-公开
    横向MOS晶体管

    公开(公告)号：JP2003037263A

    公开(公告)日：2003-02-07

    申请号：JP2002172971

    申请日：2002-06-13

    Applicant: Stmicroelectronics Sa ,  エステーミクロエレクトロニクス ソシエテ アノニム

    Inventor： MATTEI SANDRA ,  GERMANA ROSALIA

    IPC: H01L29/78 ,  H01L29/06 ,  H01L29/417

    CPC classification number: H01L29/0692 ,  H01L29/4175

    Abstract: PROBLEM TO BE SOLVED: To provide a lateral MOS transistor for intermediate power for which access resistance to a source and a drain is reduced.
    SOLUTION: A MOS power transistor is formed in an epitaxial layer of a first conductivity type. The MOS power transistor is formed on the front surface of a heavily-doped substrate of the first conductivity-type and includes alternate drain and source arrays of a second conductivity-type separated by a channel, conductive fingers, covering source fingers and drain fingers and a second metal layer connecting all drain metal fingers and covering the entire source/drain structure. Each source finger includes a heavily-doped region of the first conductivity-type, in contact with the epitaxial layer and with the corresponding source finger, and the rear surface of the substrate is coated with a source metallization.
    COPYRIGHT: (C)2003,JPO

    Abstract translation: 要解决的问题：提供一种用于对源极和漏极的访问电阻降低的中间功率的横向MOS晶体管。 解决方案：MOS功率晶体管形成在第一导电类型的外延层中。 MOS功率晶体管形成在第一导电类型的重掺杂衬底的前表面上，并且包括由沟道隔离的第二导电类型的交替漏极和源极阵列，导电指状物，覆盖源极指和漏极指，以及 连接所有漏极金属指并覆盖整个源极/漏极结构的第二金属层。 每个源极指包括与外延层和相应的源极指接触的第一导电类型的重掺杂区，并且衬底的后表面涂覆有源金属化。

    Photodetector
    38.
    发明专利
    Photodetector 审中-公开
    照相机

    公开(公告)号：JP2002369085A

    公开(公告)日：2002-12-20

    申请号：JP2002132608

    申请日：2002-05-08

    Applicant: Stmicroelectronics Sa ,  エステーミクロエレクトロニクス ソシエテ アノニム

    Inventor： CAZAUX YVON

    IPC: H01L27/144 ,  H01L27/146 ,  H01L31/0352 ,  H01L31/0376 ,  H04N5/361 ,  H04N5/335

    CPC classification number: B82Y20/00 ,  H01L27/1443 ,  H01L27/14609 ,  H01L27/14632 ,  H01L31/035245 ,  H01L31/03762 ,  H04N5/361 ,  Y02E10/548

    Abstract: PROBLEM TO BE SOLVED: To provide a photodetector whose structure is simple, and whose manufacturing costs are low capable of preventing the deterioration of an image picture.
    SOLUTION: A light detector is provided with a photodiode whose anode is connected to a reference voltage, an initialization MOS transistor connected between the cathode of the photodiode and a first power supply voltage for setting the cathode as the first power supply voltage in an initialization phase, and a means for setting the cathode of the photodiode as a saturation voltage near the reference voltage just before the initialization phase for measuring the voltage of the cathode of the photodiode.
    COPYRIGHT: (C)2003,JPO

    Abstract translation: 要解决的问题：提供一种结构简单并且制造成本低的能够防止图像图像劣化的光电检测器。 解决方案：光检测器设置有阳极连接到参考电压的光电二极管，连接在光电二极管的阴极之间的初始化MOS晶体管和用于将阴极设置为初始化阶段的第一电源电压的第一电源电压 以及用于将光电二极管的阴极设置为刚好在用于测量光电二极管的阴极的电压的初始化阶段之前的参考电压附近的饱和电压的装置。

    Method of manufacturing electromechanical component on plane substrate
    39.
    发明专利
    Method of manufacturing electromechanical component on plane substrate 审中-公开
    在平板基板上制造机电元件的方法

    公开(公告)号：JP2008114363A

    公开(公告)日：2008-05-22

    申请号：JP2007249518

    申请日：2007-09-26

    Applicant: Commiss Energ Atom ,  Stmicroelectronics Sa ,  コミツサリア タ レネルジー アトミーク ,  ストミクロエレクトロニクス・ソシエテ・アノニム

    Inventor： CASSET FABRICE ,  DURAND CEDRIC ,  ANCEY PASCAL

    IPC: B81C1/00

    CPC classification number: B81C1/0065 ,  B81B2201/0271 ,  B81B2207/015 ,  H03H3/0073 ,  H03H9/1057 ,  H03H9/2405 ,  H03H2009/02496

    Abstract: PROBLEM TO BE SOLVED: To manufacture an electromechanical component manufacturable easily, requiring low cost, and having optimum performance, in particular in terms of motion characteristics. SOLUTION: Manufacturing method according to the invention includes at least five stage, i.e. (a) a stage to form a base board 15 having one silicon region covered partially with two insulating regions, (b) a stage to form a silicon-germanium alloy sacrifice layer with selective epitaxy starting at the uncovered portion of the silicon region, (c) a stage to form a silicon layer having one mono-crystalline region arranged on the sacrifice layer and two multi-crystalline regions arranged on the insulating regions and having undergone a doping in a high concentration by the epitaxy, (d) a stage to simultaneously form a vibrational structure and a working electrode by etching the prescribed patterns in the mono-crystalline region so that a space is formed between the electrode 23 and the vibrational structure 22, and (e) a stage to remove the sacrifice layer of silicon-germanium alloy by means of selective etching. COPYRIGHT: (C)2008,JPO&INPIT

    Abstract translation: 要解决的问题：制造容易制造的机电部件，要求低成本，并具有最佳性能，特别是在运动特性方面。 解决方案：根据本发明的制造方法包括至少五个阶段，即（a）形成具有一部分被两个绝缘区域覆盖的一个硅区域的基板15的阶段，（b）形成硅 - 在硅区的未覆盖部分开始具有选择性外延的锗合金牺牲层，（c）形成具有布置在牺牲层上的一个单晶区域和布置在绝缘区域上的两个多晶区域的硅层的阶段，以及 已经通过外延进行了高浓度的掺杂，（d）通过蚀刻单晶区域中的规定图案同时形成振动结构和工作电极的阶段，使得在电极23和 振动结构22和（e）通过选择性蚀刻去除硅 - 锗合金牺牲层的阶段。 版权所有（C）2008，JPO＆INPIT

    Balun transformer and low-pass filter
    40.
    发明专利
    Balun transformer and low-pass filter 审中-公开
    BALUN变压器和低通滤波器

    公开(公告)号：JP2005341577A

    公开(公告)日：2005-12-08

    申请号：JP2005150763

    申请日：2005-05-24

    Applicant: Stmicroelectronics Sa ,  エステーミクロエレクトロニクス ソシエテ アノニム

    Inventor： HILAL EZZEDDINE

    IPC: H03H7/09 ,  H03H7/42

    CPC classification number: H03H7/42

    Abstract: PROBLEM TO BE SOLVED: To integrate a balun transformer and a low-pass filter on the same circuit.
    SOLUTION: A mode-switching transformer, combined with a differential low-pass filter, including a first planar winding in a first conductive level having an external end terminal, defining a common-mode input/output terminal; a second planar winding electrically in series with the first winding and formed in a second conductive level; at least one capacitor, connecting an external end terminal of the second winding to ground; a third winding formed in the second conductive level and having an external end terminal defining a first differential mode access; and a fourth winding, electrically in series with the third one and formed in the first conductive level, an external end terminal of the fourth winding defining a second differential mode access terminal and the central ends of all windings being interconnected to ground.
    COPYRIGHT: (C)2006,JPO&NCIPI

    Abstract translation: 要解决的问题：在同一电路上集成平衡 - 不平衡变压器和低通滤波器。 解决方案：一种与差分低通滤波器组合的模式切换变压器，包括具有外部端子端子的第一导电电平的第一平面绕组，限定共模输入/输出端子; 第二平面绕组，与第一绕组串联并形成在第二导电水平; 至少一个电容器，将所述第二绕组的外部端子端接地; 第三绕组，其形成在所述第二导电级中并且具有限定第一差模接入的外端端; 以及第四绕组，其与所述第三绕组电连接并形成在所述第一导电层中，所述第四绕组的外端端子限定第二差模接入端子，并且所有绕组的中心端互连到地。 版权所有（C）2006，JPO＆NCIPI

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