Abstract:
A method for synthesizing correction features for an entire mask pattern that initially divides mask pattern data into tiles of data - each tile representing an overlapping section of the original mask pattern. Each of the tiles of data is sequentially processed through correction feature synthesis phases - each phase synthesizing a different type of correction feature. All of the correction features are synthesized for a given tile before synthesizing the correction features for the next tile. Each correction feature synthesis phase formats the data stored in the tile into a representation that provides information needed to synthesize the correction feature for the given phase. Methods for implementing edge bar and serif correction features synthesis phases are also described. The method for synthesizing external type edge bars is performed by oversizing feature data in the tile by an amount equal to the desired spacing of the external edge bar, formatting the oversized data into an edge representation and expanding each of the edges in the edge representation of the oversized data into edge bars having a predetermined width. Internal type of edge bars for the tile are synthesized by initially inverting feature data and then performing the same steps as for generating the external edge bars. The method for serif synthesis is performed by initially formatting tile data into a vertex representation, eliminating certain of the vertices not requiring serifs, synthesizing a positive serif for each convex corner and a negative vertex for each concave corner, and eliminating any disallowed serifs. Internal bars and negative serifs are "cut-out" of original tile data by performing geometric Boolean operations and external bars and positive serifs are concatenated with the "cut-out" tile data, equivalent to performing a geometric OR operation.
Abstract:
An apparatus and method for decorrelating pairs of mutually contaminated channels in a multi-channel digital signal including two identical data processing paths and a feedback path. Each pair of mutually contaminated channels consists of a first contamined channel and a second contaminated channel. Initially, first and second shifted signals are generated by shifting the original contaminated signal such that the first shifted signal has the first contaminated channel centered at zero frequency and the second shifted signal has the second contaminated channel centered at zero frequency. Each of the first and second shifted signals are coupled to one of the two identical signal processing paths. The first path generates an error corruption component corresponding to the first shifted input signal and subtracts this corruption component from the second shifted signal in order to generate a third decorrelated digital signal. The second path generates an error corruption component corresponding to the second shifted input signal and subtracts it from the first shifted signal in order to generate a fourth decorrelated digital signal. The feedback path generates a current average error correlation factor by multiplying the third and fourth to generate an instantaneous error factor and summing this with the previous average error correlation factor for all samples. The current average error correlation factor is used to generate the first and second error corruption components. Each of the corrupted channels in the original contamined digital signal are decorrelated when the third and fourth digital signals are decorrelated.
Abstract:
A circuit for protecting an interconnect line from certain undesirable voltage swings for a given input signal. A transmission gate is coupled in series between the input signal and the interconnect line. The transmission gate's input terminal is coupled to the input signal, its output terminal is coupled to the interconnect line, and its control terminal is coupled to the output of an inverter. The input of the inverter is coupled to the input signal. When the input signal transitions to a voltage that exceeds the trip point of the inverter, the inverter outputs a signal that disables the transmission gate such that the node is isolated from the input signal. A PFET transmission gate is utilized for protection against voltages that are too negative, and an NFET transmission gate is utilized for protection against voltages that are too positive. The inverter may be replaced by a comparator having its positive input coupled to a reference voltage and its negative input coupled to the input signal. The reference voltage determines the trip point of the protection circuit. The protection circuit may also include first and second biased MOS devices (having different channel types) coupled between first and second working potentials. The gate of the first MOS device is coupled to the input signal and the gate of the second MOS device is coupled to the output of the inverter. The MOS devices function as a conductive voltage divider network to establish a voltage on the node when the node is isolated from the input signal.
Abstract:
An apparatus for reducing transmisson delay times when transmitting differential signals in an integrated circuit along long interconnect lines (10, 11) includes a current mode line driver which converts the differential signal to be transmitted into a signal that has a relatively low peak-to-peak voltage and large differential current changes. A receiver responsive to differential current changes converts the signal back into an output differential signal having peak-to-peak voltages adaptable to subsequent logic stages. A feedback circuit (Q5, Q6) coupled to the interconnect lines (10, 11) and the receiver functions to clamp the interconnect lines (10, 11) to a predetermined voltage while allowing the output differential signal to have peak-to-peak voltages greater than the predetermined voltage.
Abstract:
An ECL-to-CMOS level translator and BiCMOS buffer are described. The current supplied from the first input PMOS transistor (P1) is the input current to a current mirror comprising the first and second NMOS transistors (N1 and N2). The current mirror controls the current sourcing and sinking capability of the translator. Third and fourth NMOS transistors (N3 and N4) are coupled to the first and second NMOS transistors in the current mirror and function to vary the source-to-body voltage of the first and second NMOS transistors and consequently their gain which results in increased current drive and sinking capability. The BiCMOS differential buffer of the present invention provides a differential output signal on first and second output nodes (115 and 215). It is comprised of first and second cross-coupled buffers (100B and 200B). Cross-coupling the buffers results in improved high-to-low transition times.
Abstract:
An improved BiCMOS logic circuit (70) utilizes an emitter-coupled pair of bipolar transistors (21, 22) for differentially comparing an input signal (Vin) with a logic reference level (VBIAS). Each of the bipolar transistors are resistively loaded by a network of p-channel metal-oxide-semiconductor (PMOS) transistors (26, 27) coupled in parallel. At least one of the parallel combination of transistors has its gate coupled to a control signal (VREF2) providing a variable load resistance. The control signal is preferably provided by a feedback network (52, 53) which maintains a constant voltage swing across the network over temperature.
Abstract:
A microscopic laminar-flow heat exchanger, well-suited for cooling a heat generating device such as a semiconductor integrated circuit, includes a plurality of thin plates (10), laminated together to form a block (18). Each plate has a pair of holes (14, 15) cut through the plate such that when the block is formed, the holes align to form a pair of coolant distribution manifolds. The manifolds are connected via the plurality of microscopic channels formed from the recessed portions during the lamination process. Coolant flow through these channels effectuates heat removal.
Abstract:
A method for forming a BICMOS integrated circuit having MOS field effect transistors and bipolar junction transistors is disclosed. The process comprises first defining separate active areas, forming a gate dielectric layer and a first layer of polysilicon. This polysilicon is then selectively etched to form a plurality of equally-spaced first polysilicon members comprising the gates (33, 34) of the MOS transistors and the extrinsic base contacts (35) of the NPN transistors. After insulating the first polysilicon members, an additional layer of polysilicon is deposited over the substrate to replanarize the entire wafer surface. The additional layer of polysilicon is then etched to form a plurality of second polysilicon members (65, 66, 67, 68, 69). Impurities are diffused from the polysilicon members to form source/drain regions (73, 74, 75, 76) of the MOS transistors and the extrinsic base (81) and emitter (77) regions of the NPN transistors. The final processing steps include providing the interconnection of the MOS and NPN transistors.
Abstract:
A process for the computer creation of fuzzy cognitive maps (see Fig. 7) that are used to explore causal relationships between a group of factors and a phenomenon. These fuzzy cognitive maps are constructed using the data derived from Expanded Meta Models. These Expanded Meta Models are generated from Monte Carlo simulations that supply the factors under investigation with values, then by incrementing or decrementing these factor values one can generated an Expanded Meta Model.
Abstract:
A free fall simulator with a flight chamber, a fan system to generate airflow in the flight chamber, and a noise attenuation housing substantially enclosing the fan system.