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    Photoelectric device
    31.
    发明授权
    Photoelectric device 有权

    公开(公告)号：US11640913B2

    公开(公告)日：2023-05-02

    申请号：US17117352

    申请日：2020-12-10

    Applicant: ULTRA DISPLAY TECHNOLOGY CORP.

    Inventor： Hsien-Te Chen

    IPC: H01L21/67

    Abstract: A photoelectric device includes a target substrate, a circuit pattern layer disposed on the target substrate, a plurality of micro photoelectric elements electrically connected to the circuit pattern layer, and a supplemental repair element electrically connected to the circuit pattern layer. The target substrate is configured with a plurality of connection positions and a repair position disposed with an offset with relative to a corresponding one of the connection positions. The offset is greater than or equal to zero. The micro photoelectric elements are individually disposed on at least a part of the connection positions of the target substrate. The supplemental repair element has an electrode disposed on the repair position of the target substrate, and the electrode is connected to the circuit pattern layer. On the target substrate, the supplemental repair element is arbitrary with respect to the micro photoelectric elements.

    Electronic device
    32.
    发明授权
    Electronic device 有权

    公开(公告)号：US11502233B2

    公开(公告)日：2022-11-15

    申请号：US17132719

    申请日：2020-12-23

    Applicant: ULTRA DISPLAY TECHNOLOGY CORP.

    Inventor： Hsien-Te Chen

    IPC: H01L33/62 ,  H01L23/00 ,  H01L25/075

    Abstract: An electronic device comprises a target substrate, a micro semiconductor structure array, a conductor array, and a connection layer. The micro semiconductor structure array is disposed on the target substrate. The conductor array corresponds to the micro semiconductor structure array, and electrically connects the micro semiconductor structure array to a pattern circuit of the target substrate. The conductors of the conductor array are independent from one another. Each conductor is an integrated member formed by eutectic bonding a conductive pad of the target substrate and a conductive electrode of the corresponding one of the micro semiconductor structures of the micro semiconductor structure array. The connection layer connects the micro semiconductor structures to the target substrate. The connection layer excludes a conductive material. The connection layer contacts and surrounds the conductors, so that the connection layer and the conductors together form a one-layer structure.

    ELECTRONIC DEVICE
    33.
    发明申请
    ELECTRONIC DEVICE 有权

    公开(公告)号：US20220238477A1

    公开(公告)日：2022-07-28

    申请号：US17583364

    申请日：2022-01-25

    Applicant: ULTRA DISPLAY TECHNOLOGY CORP.

    Inventor： HSIEN-TE CHEN

    IPC: H01L23/00 ,  H01L25/075

    Abstract: An electronic device includes a substrate, a plurality of micro semiconductor structure, a plurality of conductive members, and a non-conductive portion. The substrate has a first surface and a second surface opposite to each other. The micro semiconductor structures are distributed on the first surface of the substrate. The conductive members electrically connect the micro semiconductor structures to the substrate. Each conductive member is defined by an electrode of one of the micro semiconductor structures and a corresponding conductive pad on the substrate. The non-conductive portion is arranged on the first surface of the substrate. The non-conductive portion includes one or more non-conductive members, and the one or more non-conductive members are attached to the corresponding one or more conductive members of the one or more micro conductive structures.

    Micro semiconductor stacked structure and electronic apparatus having the same
    34.
    发明授权
    Micro semiconductor stacked structure and electronic apparatus having the same 有权

    公开(公告)号：US11296061B2

    公开(公告)日：2022-04-05

    申请号：US16864753

    申请日：2020-05-01

    Applicant: ULTRA DISPLAY TECHNOLOGY CORP.

    Inventor： Hsien-Te Chen

    IPC: H01L25/075 ,  H01L33/24 ,  H01L27/15 ,  H01L33/62

    Abstract: A micro semiconductor stacked structure includes at least two stacked structure array units, wherein one stacked structure array unit is stacked on the other stacked structure array unit. In particular, the stacked structure array unit is stacked on the other stacked structure array unit along a vertical direction. Each stacked structure array unit includes a substrate, a conductive pattern layer disposed on the substrate, and a plurality of micro semiconductor devices disposed on the substrate and electrically connected to the conductive pattern layer.

    ELECTRONIC DETECTION INTERFACE AND ELECTRONIC DETECTION MODULE USING THE SAME
    35.
    发明申请
    ELECTRONIC DETECTION INTERFACE AND ELECTRONIC DETECTION MODULE USING THE SAME 有权

    公开(公告)号：US20210050381A1

    公开(公告)日：2021-02-18

    申请号：US16992838

    申请日：2020-08-13

    Applicant: ULTRA DISPLAY TECHNOLOGY CORP.

    Inventor： Hsien-Te CHEN

    IPC: H01L27/146

    Abstract: An electronic detection interface comprises a substrate structure and a plurality of detection units in array. The substrate structure includes a circuit film, which comprises a plurality of circuit units in array. The detection units are disposed on a surface of the substrate structure, and are corresponded to the circuit units in a respect manner. Each of the detection units includes at least one resilient conductive pillar, which is electrically connected to each of the circuit units.

    Manufacturing method of optoelectronic semiconductor device
    36.
    发明授权
    Manufacturing method of optoelectronic semiconductor device 有权

    公开(公告)号：US10600932B2

    公开(公告)日：2020-03-24

    申请号：US16291808

    申请日：2019-03-04

    Applicant: ULTRA DISPLAY TECHNOLOGY CORP.

    Inventor： Hsien-Te Chen

    IPC: H01L33/00 ,  H01L27/15 ,  H01L33/52

    Abstract: A manufacturing method of an optoelectronic semiconductor device includes: providing a matrix substrate, which comprises a substrate and a matrix circuit disposed on the substrate; transferring a plurality of micro-sized optoelectronic semiconductor elements from a temporary substrate to the matrix substrate, wherein the micro-sized optoelectronic semiconductor elements are separately disposed on the matrix substrate, and at least one electrode of each micro-sized optoelectronic semiconductor element is electrically connected with the matrix circuit; forming a protective layer completely covering the micro-sized optoelectronic semiconductor elements, wherein the height of the protective layer is greater than the height of the micro-sized optoelectronic semiconductor elements; and grinding the protective layer until a residual on a back surface of each micro-sized optoelectronic semiconductor element and the back surface are removed to expose a new surface.

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