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公开(公告)号：KR1020140014509A
公开(公告)日：2014-02-06
申请号：KR1020120080626
申请日：2012-07-24
Applicant: 삼성전자주식회사
CPC classification number: G01B11/24 , G01B11/26 , G03F9/7034
Abstract: A level sensor of an exposure apparatus is disclosed. The level sensor comprises: a light source irradiating the surface of a wafer with light; a projecting unit having a first slit which the light from the light source passes through and is single, not a periodic grid; and a detecting unit having a second slit which light reflected from the surface of the wafer passes through and is single, not a periodic grid; and a detector detecting the reflected light passing through the second slit of the detecting unit.
Abstract translation: 公开了一种曝光装置的液位传感器。 液位传感器包括：用光照射晶片表面的光源; 投影单元，具有来自光源的光通过并且是单一的不是周期性栅格的第一狭缝; 以及检测单元，其具有从晶片表面反射的光通过并且是单一的不是周期性栅格的第二狭缝; 以及检测器，检测通过检测单元的第二狭缝的反射光。
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公开(公告)号：KR1020130079006A
公开(公告)日：2013-07-10
申请号：KR1020120000236
申请日：2012-01-02
Applicant: 삼성전자주식회사
IPC: H01L21/66
Abstract: PURPOSE: A method for monitoring semiconductor equipment is provided to reduce measurement errors by using a Moire interferometer for directly measuring a bare substrate or wafer chuck. CONSTITUTION: A free pattern beam is reflected from an object device to form a pattern beam (S11). The pattern beam passes through a first grating. A Moire interference pattern is formed (S12). The Moire interference pattern is analyzed. The height map of the object device is produced (S13). [Reference numerals] (AA) Start; (BB) End; (S10) Source beam passes through a first grating and foms a free pattern beam; (S11) Free pattern beam is reflected from an object device to form a pattern beam; (S12) Pattern beam passes through a first grating. A Moire interference pattern is formed; (S13) Moire interference pattern is analyzed. The height map of the object device is produced
Abstract translation: 目的：提供一种用于监测半导体设备的方法，以通过使用用于直接测量裸基板或晶片卡盘的莫尔干涉仪来减少测量误差。 构成：自由图案光束从对象装置反射以形成图案光束（S11）。 图案光束通过第一光栅。 形成莫尔干涉图案（S12）。 分析了莫尔干涉图案。 产生对象装置的高度图（S13）。 （附图标记）（AA）开始; （BB）结束; （S10）源光束通过第一光栅并且形成自由图案光束; （S11）自由图案光束从对象装置反射以形成图案光束; （S12）图案光束通过第一光栅。 形成莫尔干涉图案; （S13）分析莫尔干涉图案。 生成对象设备的高度图
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公开(公告)号：KR1020120000163A
公开(公告)日：2012-01-02
申请号：KR1020100060352
申请日：2010-06-25
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: G03F7/70633 , G03F7/7085 , H01L21/0274
Abstract: PURPOSE: An overlay measurement method is provided to precisely measure the overlay between upper and lower patterns from a virtual image before performing a patterning process with respect to an upper film, thereby repairing the upper film without discarding a semiconductor substrate. CONSTITUTION: First information with respect to a first structure is acquired(ST130). A second auxiliary structure is arranged on the first structure(ST140). The first structure and second auxiliary structure are arranged(ST150). Second information with respect to the second auxiliary structure is acquired(ST160). Virtual information is acquired by synthesizing the first information and second information(ST170). A virtual overlay between the first structure and second structure is measured from the virtual information(ST180).
Abstract translation: 目的：提供一种覆盖测量方法，用于在执行相对于上部膜的图案化处理之前，从虚拟图像精确地测量上部和下部图案之间的覆盖，从而修复上部膜而不丢弃半导体衬底。 规定：获取关于第一结构的第一信息（ST130）。 在第一结构上设置第二辅助结构（ST140）。 布置第一结构和第二辅助结构（ST150）。 获取关于第二辅助结构的第二信息（ST160）。 通过合成第一信息和第二信息来获取虚拟信息（ST170）。 从虚拟信息测量第一结构和第二结构之间的虚拟覆盖（ST180）。
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公开(公告)号：KR1020110066651A
公开(公告)日：2011-06-17
申请号：KR1020090123394
申请日：2009-12-11
Applicant: 삼성전자주식회사
Inventor： 허진석
IPC: H01M8/04
CPC classification number: H01M8/04201 , F28D1/06 , F28D7/12 , H01M8/04164 , H01M8/04291 , H01M8/0618
Abstract: PURPOSE: An integrated piping module is provided to reduce the number of components for the configuration of pipes connecting a fuel processor and a fuel cell, and to minimize heat loss in a fuel cell system. CONSTITUTION: An integrated piping module comprises: a sealed first tank(210); an outer pipe(250) which is passes through the first tank and discharges the gas flowing in from the outside into the first tank by an intermediate unit(253) with an opened hold shape; and an inner pipe(260) which is formed inside the pipes between a meddle portion and an outlet(252) of the outer pipe and discharges the gas inside the first tank to the fuel cell.
Abstract translation: 目的：提供一个集成管道模块，以减少用于连接燃料处理器和燃料电池的管道配置的部件数量，并最大限度地减少燃料电池系统中的热损失。 构成：集成管道模块包括：密封的第一罐（210）; 通过第一箱体的外管（250），通过具有打开的保持形状的中间单元（253）将从外部流入的气体排出到第一箱体中; 以及内管（260），其形成在所述管道的内部在所述外管的中间部分和出口（252）之间，并将所述第一罐内的气体排放到所述燃料电池。
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公开(公告)号：KR1020110054393A
公开(公告)日：2011-05-25
申请号：KR1020090111015
申请日：2009-11-17
Applicant: 삼성전자주식회사
IPC: H01L21/027 , H01L21/66 , G03F7/20
CPC classification number: G01N21/9501 , G03F7/70641 , G03F7/7085 , G03F7/70991
Abstract: PURPOSE: A method for measuring the focus change of a photolithography device and a method for manufacturing a semiconductor device are provided to improve productivity by rapidly measuring the focus change on a wafer region. CONSTITUTION: A photo mask and a wafer are inputted to a photolithography device(S10). Light for measurement is irradiated to the wafer. The image of an optical pattern is transferred on the photoresist layer by using an ultraviolet ray(S20). The photoresist layer is baked(S30). The photoresist layer is inspected(S40). The inspection result of the photoresist layer is analyzed(S50).
Abstract translation: 目的：提供一种用于测量光刻设备的聚焦变化的方法和用于制造半导体器件的方法，以通过快速测量晶片区域上的聚焦变化来提高生产率。 构成：将光掩模和晶片输入到光刻设备（S10）。 用于测量的光照射到晶片。 通过使用紫外线将光学图案的图像转印到光致抗蚀剂层上（S20）。 烘烤光致抗蚀剂层（S30）。 检查光致抗蚀剂层（S40）。 分析光致抗蚀剂层的检查结果（S50）。
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Patent Agency Ranking
公开(公告)号：KR1020090040155A
公开(公告)日：2009-04-23
申请号：KR1020070105788
申请日：2007-10-19
Applicant: 삼성전자주식회사
CPC classification number: H01M8/0612 , H01M8/04007 , H01M8/0668
Abstract: A fuel cell apparatus employing the same is provided to allow a fuel processor and a stack to be smoothly operated. A fuel cell apparatus comprises: a reformer(120) performing a reformation reaction of fuel source; a burner(130) heating up the reformer; a CO removal unit(172) removing CO generated by reforming gas from the reformer; a stack(200) wherein a generation reaction is processed using the reforming gas; a first burner fuel supply line(301) supplying the fuel source as an operation fuel for the burner; and a second burner fuel supply line(302) supplying the reforming gas from the CO removal unit as the operation fuel for the burner.
Abstract translation: 提供了采用该燃料电池装置的燃料电池装置，以使燃料处理器和电池堆平稳地操作。 燃料电池装置包括：重整器（120），执行燃料源的重整反应; 燃烧器（130），其加热所述重整器; CO去除单元（172）去除由重整器重整气体而产生的CO; 堆叠（200），其中使用所述重整气体处理生成反应; 供应作为燃烧器的操作燃料的燃料源的第一燃烧器燃料供给管线（301） 以及第二燃烧器燃料供给管线（302），其将来自CO去除单元的重整气体作为燃烧器的操作燃料供应。
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公开(公告)号：KR1020170034606A
公开(公告)日：2017-03-29
申请号：KR1020150133091
申请日：2015-09-21
Applicant: 삼성전자주식회사
CPC classification number: H01M4/525 , H01M4/0416 , H01M4/0471 , H01M4/131 , H01M4/1391 , H01M4/523 , H01M10/052 , H01M10/0525 , H01M10/0585 , H01M2004/021 , H01M2004/028
Abstract: 3차원이차전지용양극및 그제조방법이개시된다. 개시된 3차원이차전지용양극은양극활물질로이루어진소결체이며, 두께가 5 ㎛~30 ㎛이며, 전극밀도가 3.7 g/cc 내지 4.6 g/cc 이다. 상기양극활물질은리튬코발트산화물일수 있다.
Abstract translation: 公开了用于三维二次电池的阳极及其制造方法。 所公开的用于三维二次电池的阴极是由阴极活性材料制成并具有5至30μm的厚度和3.7至4.6g / cc的电极密度的烧结体。 正极活性物质可以是钴酸锂。
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39.发明公开
公开(公告)号：KR1020170016747A
公开(公告)日：2017-02-14
申请号：KR1020150110232
申请日：2015-08-04
Applicant: 삼성전자주식회사
IPC: H01M4/131 , H01M4/485 , H01M4/1391 , H01M10/052
CPC classification number: H01M4/525 , C30B28/02 , C30B29/22 , H01M4/0404 , H01M4/0407 , H01M4/0471 , H01M4/131 , H01M4/134 , H01M4/1391 , H01M4/1395 , H01M4/382 , H01M4/505 , H01M10/052 , H01M10/0525 , H01M10/0562 , H01M10/0583 , H01M2004/021 , H01M2004/027 , H01M2004/028 , H01M2220/30 , H01M2300/0068
Abstract: 전자이동이용이하도록결정방향이정렬된다결정소결체를갖는이차전지양극, 상기이차전지양극을포함하는이차전지, 및상기이차전지양극을제조하는방법이개시된다. 개시된이차전지양극의양극활물질층은리튬산화물을포함하는재료로형성된다수의결정립들을갖는다결정소결체를포함하고, 각각의결정립은판상의단결정시드템플릿및 상기시드템플릿주위의모체결정을포함할수 있다.
Abstract translation: 阴极包括阴极集电体层和阴极集电体层的表面上的正极活性物质层。 阴极活性物质层包括具有多个锂基氧化物的晶粒的烧结多晶体材料，并且多个晶粒中的每个晶粒包括种子模板和种子模板周围的基质晶体，其中种子模板是 单晶并且具有板的形状。
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公开(公告)号：KR101670458B1
公开(公告)日：2016-10-28
申请号：KR1020100060352
申请日：2010-06-25
Applicant: 삼성전자주식회사
IPC: H01L21/027
CPC classification number: G03F7/70633
Abstract: 오버레이계측방법에따르면, 제 1 구조물에대한제 1 정보를획득한다. 상기제 1 구조물상에제 2 예비구조물을형성한다. 상기제 2 예비구조물에대한제 2 정보를획득한다. 상기제 1 정보와상기제 2 정보를합성하여, 상기제 2 예비구조물에대한공정을통해형성될제 2 구조물이상기제 1 구조물상에중첩된구조에대한가상정보를획득한다. 상기가상정보로부터상기제 1 구조물과상기제 2 구조물간의가상오버레이를계측한다. 따라서, 상부막에대한패터닝공정전에가상이미지로부터상하부패턴들간의오버레이를정확하게계측할수가있다.
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