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公开(公告)号:KR1020110064155A
公开(公告)日:2011-06-15
申请号:KR1020090120640
申请日:2009-12-07
Applicant: 서울대학교산학협력단
CPC classification number: C01B32/184 , B01J6/00 , B32B9/04
Abstract: PURPOSE: A method for manufacturing graphine is provided to directly form the graphine on a substrate and to simplify process without graphine damage. CONSTITUTION: A method for manufacturing graphine comprises: a step of forming a carbon-dissolved metal thin film(230) on a substrate(210); and a step of performing thermal treatment of the metal thin film to form a laminate structure on the substrate.
Abstract translation: 目的:提供制造石墨的方法,以直接在基材上形成石墨,并简化没有石墨损伤的工艺。 构成:制造石墨的方法包括:在基材(210)上形成碳溶解的金属薄膜(230)的步骤; 以及对所述金属薄膜进行热处理以在所述基板上形成层叠结构的步骤。
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公开(公告)号:KR1020110064154A
公开(公告)日:2011-06-15
申请号:KR1020090120638
申请日:2009-12-07
Applicant: 서울대학교산학협력단
CPC classification number: C01B32/184 , B32B9/007
Abstract: PURPOSE: A method for preparing graphine is provided to simplify process without a process of moving the graphine to a substrate and to prevent damage of the graphine. CONSTITUTION: A method for preparing graphine comprises: a step of forming a laminate structure comprising a graphite catalyst thin film(240) amorphous carbon thin film(230) on a substrate(210); a step of performing thermal treatment of the first laminate structure to form a second laminate structure on the substrate; and a step of removing the graphite catalyst thin film and second graphine layer. The graphite catalyst is a metal substance in which carbon is dissolved.
Abstract translation: 目的:提供一种制备石墨的方法,以简化工艺,无需将石墨移动到基板上,并防止石墨的损坏。 构成:制备石墨的方法包括:在基材(210)上形成包含石墨催化剂薄膜(240)无定形碳薄膜(230)的叠层结构的步骤; 对所述第一层叠结构进行热处理以在所述基板上形成第二层叠结构的工序; 以及去除石墨催化剂薄膜和第二石墨层的步骤。 石墨催化剂是其中碳被溶解的金属物质。
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公开(公告)号:KR1020110014895A
公开(公告)日:2011-02-14
申请号:KR1020090072491
申请日:2009-08-06
Applicant: 서울대학교산학협력단
CPC classification number: G03F7/70625 , G03F7/2059 , G03F7/70075 , G03F7/7025 , G03F7/70275 , G03F7/70716 , G03F7/70833 , G03F7/70941
Abstract: PURPOSE: An apparatus for forming a pattern is provided to uniformize background intensity of electron beam and to prevent noise. CONSTITUTION: An apparatus(500) for forming a pattern comprises: a specimen support(510) having a crystalline specimen; an electron beam irradiation unit(520) for irradiating electron beam; an objective lens(530) for forming a grid image by transmitting beam and diffraction beam; a plate(541) having a plurality of first holes(542) for passing transmitting beam and diffraction beam; a deflector(540) having a plurality of electron beam control devices(545) for controlling process path of the transmitting beam and diffraction beam; an aperture(550) having a plurality of second holes(552) formed circular path of the transmitting beam and diffraction beam; and a substrate support(570) having the substrate in which electron resist is applied.
Abstract translation: 目的:提供一种用于形成图案的装置,以使电子束的背景强度均匀化并防止噪声。 构成:用于形成图案的装置(500)包括:具有结晶样本的样本支架(510); 用于照射电子束的电子束照射单元(520) 用于通过发射光束和衍射光束形成网格图像的物镜(530); 具有用于使发射束和衍射光束通过的多个第一孔(542)的板(541) 偏转器(540),具有用于控制发射光束和衍射光束的处理路径的多个电子束控制装置(545); 具有多个第二孔(550)的孔(550),所述第二孔形成所述发射束和衍射束的圆形路径; 以及具有其中施加有电子抗蚀剂的基板的基板支撑件(570)。
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公开(公告)号:KR1020110014845A
公开(公告)日:2011-02-14
申请号:KR1020090072411
申请日:2009-08-06
Applicant: 서울대학교산학협력단
IPC: G11C11/15
CPC classification number: G11C11/161 , H01L43/12 , B82Y10/00 , H01L27/222
Abstract: PURPOSE: A method for manufacturing a racetrack memory is provided to easily form a magnetic nano line by using a pattern forming device using a crystal structure of materials. CONSTITUTION: An object is a nano line pattern and is arranged on a chamber. An electron beam(500) is radiated to the object. A substrate(510) is exposed to the electron beam which passes through the object. An electron beam resister(530) exposed to the electron beam passing through the object is developed. The electron beam resister nano line pattern is formed. A magnetic nano line is formed by etching a magnetic material(520).
Abstract translation: 目的:提供一种制造赛道记忆的方法,通过使用材料的晶体结构的图案形成装置容易地形成磁性纳米线。 构成:物体是纳米线图案,并且被布置在腔室上。 电子束(500)被辐射到物体。 衬底(510)暴露于穿过物体的电子束。 开发了暴露于通过物体的电子束的电子束电阻(530)。 形成电子束电阻纳米线图案。 通过蚀刻磁性材料(520)形成磁性纳米线。
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