公开(公告)号：KR1020110002952A

公开(公告)日：2011-01-11

申请号：KR1020090060498

申请日：2009-07-03

Applicant: 서울대학교산학협력단

Inventor： 이윤식 ,  김병기 ,  김용권 ,  심태석 ,  이보람 ,  윤효진 ,  고율

IPC: G01N33/543 ,  C12M1/38 ,  G01N33/53

Abstract: PURPOSE: A bead-based microchip with a temperature control function is provided to shorten chemical reaction time and to simplify test procedure. CONSTITUTION: A bead-based microchip with a temperature control function comprises: a microchip body(140) with a first reaction chamber(142) and second reaction chamber(144) which are connected through a fluid channel; a bead filled in the reaction chamber in which a ligand is fixed on the surface; a heater(150) which is attached on the lower side of the microchip body; and a cover(130) which is attached at the upper side of the microchip body and has a sample inlet and enzyme inlet.

Abstract translation: 目的：提供具有温度控制功能的珠粒微芯片，以缩短化学反应时间并简化测试程序。 构成：具有温度控制功能的珠粒微芯片包括：具有通过流体通道连接的第一反应室（142）和第二反应室（144）的微芯片体（140）; 填充在反应室中的珠子，其中配体固定在表面上; 加热器（150），其安装在所述微芯片体的下侧; 以及附接在微芯片体的上侧并具有样品入口和酶入口的盖（130）。

公开(公告)号：KR101445028B1

公开(公告)日：2014-09-26

申请号：KR1020130036211

申请日：2013-04-03

Applicant: 서울대학교산학협력단

Inventor： 진주영 ,  김용권 ,  유승현 ,  배재성

IPC: G02B26/10 ,  G02B26/08

CPC classification number: G02B26/0841 ,  B81C2201/014 ,  B81C2201/0181 ,  G02B26/105

Abstract: The present invention relates to a silicon nitride layer scanner with an improved tilt angle and a manufacturing method thereof and, more specifically, to a silicon nitride layer scanner including a silicon nitride layer; a grid which is connected to the outer lower part of the silicon nitride layer and supports the silicon nitride layer; a plurality of fixing comb teeth which is connected to the outer surface of the grid wherein the comb teeth are arranged at fixed intervals.

Abstract translation: 本发明涉及具有改进的倾斜角的氮化硅层扫描器及其制造方法，更具体地说，涉及包括氮化硅层的氮化硅层扫描器; 栅格，其与氮化硅层的外部下部连接并支撑氮化硅层; 多个固定梳齿连接到格栅的外表面，其中梳齿以固定间隔布置。

公开(公告)号：KR101082348B1

公开(公告)日：2011-11-10

申请号：KR1020090060498

申请日：2009-07-03

Applicant: 서울대학교산학협력단

Inventor： 이윤식 ,  김병기 ,  김용권 ,  심태석 ,  이보람 ,  윤효진 ,  고율

IPC: G01N33/543 ,  C12M1/38 ,  G01N33/53

Abstract: 본발명의온도조절기능을구비한비드기반마이크로칩은, 구조적으로격리되어상호간의열전달을차단하도록구성된제 1반응실및 제 2반응실이구비된몸체부와; 상기제 1반응실내부에충진되는목표단백질고정용비드및 상기제 2반응실내부에충진되는단백질분해용비드와; 상기제 1반응실측의상기몸체부하면에부착·형성되는제 1히터부및 상기제 2반응실측의상기몸체부하면에부착·형성되는제 2히터부와; 상기몸체부의상면에부착되되, 시료가내·외부적으로이동하는출입구로사용되는다수개의관통구가형성된덮개부와; 상기덮개부의상면에구비되되, 내부에상기다수개의관통구중 일부와연결되는마이크로채널이형성된유로부; 및상기유로부의상면에결합되어공압밸브를이용하여유체의유동을제어하는유동제어부;를포함하여구성되어, 상기제 1히터부를통해상기제 1반응실을가열함으로써상기단백질고정용비드표면에결합된목표단백질의변성(denaturation)과용출이동시에일어나게하는한편, 상기제 2히터부를통해상기제 2반응실을가열하여상기단백질분해용비드의활성도를높이는것을특징으로한다.

公开(公告)号：KR1020110082951A

公开(公告)日：2011-07-20

申请号：KR1020100002904

申请日：2010-01-12

Applicant: 서울대학교산학협력단

Inventor： 김용권 ,  박재형 ,  유병욱

IPC: H01L21/60 ,  H01L23/48 ,  H01L23/12

Abstract: PURPOSE: A method for a vertically penetrated silicon electrode with an insulating glass part is provided to fill insulating glass around a silicon pillar to manufacture a penetration electrode, thereby simplifying manufacturing processes by eliminating a process which fills metal materials in a via hole. CONSTITUTION: A protective pattern is formed on one side of a silicon wafer to form a silicon electrode(S100). The silicon wafer is etched to form a silicon electrode(S200). The silicon wafer is bonded with a glass wafer(S300). The bonded glass wafer is dissolved(S400). Both sides of the silicon wafer and the glass wafer are processed so that the thicknesses of the silicon wafer and the glass wafer become a fixed thickness(S500).

Abstract translation: 目的：提供一种具有绝缘玻璃部件的垂直穿透的硅电极的方法，以填充硅柱周围的绝缘玻璃以制造穿透电极，从而通过消除填充通孔中的金属材料的工艺来简化制造工艺。 构成：在硅晶片的一侧形成保护图案以形成硅电极（S100）。 蚀刻硅晶片以形成硅电极（S200）。 硅晶片与玻璃晶片（S300）接合。 粘合玻璃晶片溶解（S400）。 处理硅晶片和玻璃晶片的两侧，使得硅晶片和玻璃晶片的厚度变为固定厚度（S500）。